Advanced Laboratory

Submitted by
Raising Archana Bairiganjan Mohapatra
Roll No: 22MS60R18
Material Science Centre
IIT KHARAGPUR
 Experiment:3
I-V Characterization of Metal-Semiconductor contacts
Objectives:
1. To measure the current-voltage characteristics of metal-semiconductor
contacts
2. Todetermine whether a given contact-substrate combination produces
an ohmic contactor a Schottky contact.
Theory:
To make a device, we need to connect a metal electrode to the semiconductor.
Metal-semiconductor (M-S) junctions can behave as either Schottky barriers or
as Ohmic contacts, depending on the interface properties. Before discussing
about metal semiconductor junction here I am showing the fundamental band
picture of metal, semiconductor and insulator.

When metal(M) semiconductor(S) junction is formed, Electrons begin to flow

from S to M near junction. Creates surface depletion layer, and hence a built-in
electric field (similar to p+-n junction). Under equilibrium, net flow of carriers
will be zero, and Fermi-level will be constant. A barrier B forms for electron
flow from M to S. B = M –  for ideal MS (n-type) contact.
Some important expression
B = M – 
B is called “Schottky barrier height”.
It is experienced by electron moving from metal to
semiconductor VB=M-S
VB Is called Contact potential
It is experienced by electron moving from n-type semiconductor to metal
Ohmic Contact & Schottky Contact:

Schottky Barrier: N-Type & P-type:

Equipment and chemicals:

1) Keithley source meter
2) Si
3) NiO
Notable features of Keithley are:

 I and V sweeping—Sweep capabilities offer a way to test devices

under a range of conditions with different source, delay and
measure characteristics. These can include fixed level, linear/log
and pulsed sweeps.
 On-board processor—Some SMUs further improve instrument
integration, communication and test time by adding an on-board script
processor. User-defined on-board script execution offers capabilities
for controlling test sequencing/flow, decision making, and instrument
autonomy.
 Contact check—SMUs can verify good connections to the device
under test before the test begins. Some of the problems this function
can detect include contact fatigue, breakage, contamination,
corrosion, lose or broken connections and relay failures.

Methodology

The experimental set up consists of probe arrangement, sample, constant

current generator. Four probe apparatus is one of the standards and most
widely used apparatus for the measurement of resistivity of semiconductors.
This method is employed when the sample is in the form of a thin wafer,
such as a thin semiconductor material deposited on a substrate. The sample
is millimetre in size and having a thickness w. It consists of four probes
arranged linearly in a straight line at equal distance S from each other. A
constant current is passed through the two probes and the potential drop V
across the middle two probes is measured.
 Results:

Result Discussion:
Conclusion
From the IV graph of Sample -1 it is clearly observed that it is a
Schottky contact. From the logarithm graph it if found that barrier
height is nearly 0.25 V. From the IV graph of Sample -2 it is
observed that it is a ohmic contact and barrier height is 0.12V.