(1)

Chapter
section1-1

1. Describe the Bohr model of

t he atom.
the central nucleus of protons and neutrons orbited
Bohr model has a
consisting
electrons at distances from the nucleus.
by varying
2. Define electron.
An electron is the smallest particle of
negative electrical charge.
3. What the
is nucleus of an atom composed of?Define each component.
Probons neutrons. A of positive charge neutron net
and proton is a
particle and a has no

charge.
4. Define atomic number.
Atomic number is the number of protons in the nucleus of an atom.

5. Discuss electron shells and orbits and their levels.

energy
An electron shell contains orbiting electrons at a certain energy level. Each shell of a
given atom
is at a different energy level.

6. What is a valence electrons.

A valence electron is one that isin the outer shell of an atom.

7. What is a free electron.

A free electron is a valence electron that has broken free of its parent atom.

8. Discuss the difference between positive and negative ionization.

A neutral atom that has lost valence has

positive ion is a
previously a electron and a net positive

charge. A negative ion is one that has gained an extra electron and has a net negative charge.
9. Name two theories that distinguish the quantum model.
The
quantum model is based on the
uncertainly principle and wave-particle duality.
Section (1-2)
1. What is the basic difference between conductors and insulators?
Conductors have many free electrons and easily conduct current. Insulators have essentially no free
electrons and do not conduct current.
2. How do semiconductors differ from conductors and insulators?
Semiconductors do not conduct current as well as conductors do.In terms of conductivity, they are between
conductors and insulators.
3. How many valence electrons does a conductor such as copper have?
Conductors such as copper have one valence electron.
4. How many valence electrons does a semiconductor have?
Semiconductors have four valence electrons.
5. Name three of the best conductive materials.
Gold, silver and copper are the best condoctors.
6. What is the most widely used semiconductive material?
Silicon is the most widely used conductive material.
7. Why does a semiconductor have fewer free electrons than a conductor?
The valence electrons of a semiconductor are more tightly bound to the atom than those of a conductors.
8. What is meant by the term intrinsic?
An intrinsic material is one that is in a pure state.
9. What is a crystal?
A crystal is a solid material formed by atoms bonding together in a symmetrical pattern.
 Section(1-3)
1. Are free electrons in the valence bond or in the conduction bond?
Free electrons are in the conduction bond.
2. Which electrons are responsible for electron current in silicon?
Free (conduction) electrons are responsible for electron current in silicon.
3. What is a hole?
A hole is the absence of an electron in the valence bond.
4. At what energy level does hole current occur?
Hole current occurs at the valence level.
Solids of Revolution:the washer method

xY

"*"-BC
-

Fig.6.13 (b)x
uber radius:RCtes
Washer's area is:

A(x) 1[R(x(7 P[v(x)]

=
-

H(tR(x() - [v C(x I)
=

Volume for rotation about the X-axis

V (YA(x)d(x (+π[[R(x)) [v(x)jydx
= =
-
2.9.9 y
5
=
+1, line y =
-

x+3, revolved about the xaxis

page 569 x = 3
-

1
+
-
1 +

x2 +x - 20
=

(x 2)(x 1) 0
+ -
=

x - 2(or) = x 1
=

x
-
2 -

1 & I

y x2 =
+ 15 2 f 2

x
+
35 4 3 2
y
-
=

xY
( -

2,55)
Y-
-3

1
=

venogginner
& 4

-
X &
= ·
(1,2) side outer
-9
1 -

1x 18
a
⑧
1 -
x =

Outer radius:R(x) =
-
x+ 3
Inner radius:v(() =
s2+/
By Washer's method,
sbA(x)dx -- -- -iee
v=x+8,
V
c
-
=

=
SP4[(R(x)) - (x)5ydx
3)2 1)23dx
4(b9(1x
=
+
-
(x +

π
9 (x4 2x2 1)9dx
H(((2 6x
+ - + +
-
=

6x 9 x4 2x 15dx
H5j(x2
+ -
- . -
=

x" x2 6xdx
H5!(8
-
- -
=
 Volume for rotation about the Y-axis

v
SdA(y)dy
=

Sd49lR(y)
=
-- Tr(y)]]d

e.g.1 parabola y=15, y =2x,

line

=2x
x

( - 2x 0
=

x(x -
2) 0=

x (or)
= x 2
=

x O I 2

yx = & I 4

2x& 2 4
y =

Y
17

y
4
=
① 12(2,4)
U
-
⑭ i 51
↑

-N ↑ N
qu

y
1
-

1(
x

y0 =

>s
x-
01,2
radius:
Outer
R(y) 5y =

Inner radiusir(y) =
By Washer's method,
V
sdAcy)dy
=
H(z y) v =
-

=
SAH9ER(y)5- [rCy)S]dy H(8 6 1.05 =
-
-

[i5y5 -
[z5ydy
+

yj
=

5M =
39. liney x,y 1,x 0
= = =
37. The
x-axis,
Y
1
x 1
=
1
I I y =

/C
,

xX
-

1
I
y x
=
⑧
/
/
Yx
/ y
50/
=

IT1. a
7
-

&> s
x =
-
π &
x I
=

I I
Ouber radius:R(x) 1 =
enter radius:R(x) 1 =
-

Inner radius:v (s) = Inner radiusiu ((0)=Jc0s

By Washer's method, By Washer's method,

v
(P4[[R(x)) [v(x)5Idx
=
-
v
5P4[5R(x)j [v(a)5
=
dx -

H5(515-,cyds
-
1S*t1.c0ssda
=

H(x -
2

Itxesins
=

H
=

[5 (51.14 169
=

Iπ
= 114/6π
=
 Chapter (2)
Diodes and Applications
The diodes
Depletion regions
Anode Cabhode
PN
(a) Basic structure

And he cathode
(b)
symbol
-A diode is made from a small piece of semiconductor material, usually silicon, in which half is doped as a p region and half is doped as n region with a pn junction and
depletion between them. P region is called anode and n region is called cathode.

Forward bias Reverse bias

Canode -> cathodet) Canode cathode( -)
*
PIN

#
↑t
1
-
Δ
-11
-
=

2.3 Diode Models

the ideal Diode Model

Forward Bias, VF OV
=

IF=a
+
Reverse Bias, p = 0
v vtAS
=
 diode model
the practical
Forward
VF 0.71
bias, =

0
By KVL, VBIAS V VpzyM5
- -

1
=

v
RIMIT JpRLINAT): Chm's Laws

SFRLIMIVBIAS V
-

BIAs
V
-

SF=
F

RLIMIT
Reverse bias, Ip =0A
v VIAS
=

complete diode model

diode's resistence

Forward bias, VF = 9.7

V
+5
9.7
"B+1S -

** =

↓rid
RLINT
BIMIORLIMSTInRorieSg20:
Reverse bias, V
v V =
- V
RBIAS RLIMIT
 ↑RLIMIT
=hom
e.g. 2.1
(b) Ideal model:
p =0A
lov

Ispine
-
=
-

& = Practical
v Vp+As 10V
&

model:
=

OV
RLMF =
1p=0
+
=

(b)
(a) V VBIAs
=
= 10V

cas Ideal
model,
NEFAs
V OV
PLIMIT

F
complete model.
Ip = in A

PLIMIT
VRLSMIT FRLIMIT InAxIker =

33 (mV
=

10m A
=

VR-mx =1R(1M+7 18 10-3 18)

x + 10V
Vk y+A5 VRLsMITIgglay
-

- = =

Practical model, V =0.7V

*1=vp-As V
-

RLIMIT
19-9.7
=

1k
5 9.3mA
=
9.3x10-3x103 9.5V
V-1M5T rR(8M5=

4
= =

complete model, rid=100

v - 97

Sz =

pAdrd
19 -
0.7
=

103 +10
9.3
=

1910
9.2/m A
=

VF 07+51r'd 0.7 (9.21x103x19) 792mV

= =
+
=

9.21x18 3x183 9.2/V

-

V. smT FFRLINI
=

= =
Ripple factor (r)

v
v v(pp)
=

v
DL

Ucopc (xR,) Upcracts

=

vc =

(1 -

15k,c Vpcrects

Vpcrets:Upcouts

Ucops:the peak to peak ripple voltage

the de
vpc =
voltage value of the filter's output voltage

V ~the unfiltered peak rectified voltage

p(rect)

half wave 60Hz

Frequency
Full wave 120Hz
e.g. 2.8Vrms=1200, Nori-leturns, Neec Hurn, C -
1090
=
uF, R =
2208, 0 =
120Hz (full wave)

* V 5V
=
52 129
= x =
169.7V
pcpric rm/

* u
Nx b
=

pri
= 0.1
=

nV 9.1 169.7 16.97V

vp(sec) = x
=
=
pcoris

V
VpCousc Vp(sec 1.4
-
=

pcrects
= 16.97 1.4 -

15.57V
=

rpc
V = x V
r(apc p(rect)

1
= x (5.57
3
129 +228 x10-

v
①L
=
=,953.9Vvpcract)
-R,C
I 15.57
1
= -

x
3
2x129x220x19

=
15.27V
v
v cpp) 0.539 0.239
= =
=

15.27
vc
the percent in ripple =0.039x100%
= 3.9%.
 V
?,B8Bs= pR*Vsupply
2.12
e.g. out
=

229
=
12
*

100 229
+

= 8.25V
49.7
Vout VbIAs
=

=
8.25+9.7
= 8.95V
8.95V -
. . . . -

V
out

iv
-
-
- =

For positive limiter

Vous VpIAS 49.7

=

limiter
For
negative
v -
V -
0.7
BIAS
=

out
e.g.2.11V.x+ =?
For positive limiter

v
out v5AS +9.7
=

5 + 1.7
=

5.7V
=

For
negative limiter

v -
= V - 9.7
out BIAS

= -
5.9.7
=
-
5.7V

- . . . . -
5.7V
+

-
5.71 . . . .

Halp-wave rectifier

Vavz=

0.7V
VpCou) Vp(in) =
=
-
e.g. 2.2580. - - -

ov

V
AVG 15
=

1 15.9V = =

Related problem

V. 12V
=

Vvz =

12
=
3.82V
=

e.g. 2.3
15V 3V 51V
& &
-

Vin &
-
· &
Voub ② I

kes
1N400 (a) (b)
-5y
-

1.7 = 3 9.7 2.3V

(a)
Upcouts Vp(in)
-

- =

(a) (b)V = V -
1.7 50
=
-
1.7 49.3V
=

PCon6) PCin)
1.7=5 -8.7 = 4.3V
(a)
Upcouts Vp(in)= -

+1897. - -

V I Voub

Toes
ish &

1g V
limes
- -
-

(b)
=

(b)V 9.7=99.3V
PCOU)*Vp(in) 1.7
-
=
100 -
 e.g.2.6 100V
pinc: Upcpris
e.g. 2.4 0.5, 170V v V
n =

Up(in) = =

o(pvi)
=

V nV
1 0.5
=

P(sec) ocpris (a) n =

=

=0.5x/7& 2
85V
=

V V 1.7
Vocsec)= nVocoris
-

pouts PC secs

=
85 -
0.7
84.3V
=
8.5x188
=

= 50V
For half of the
R. P n 2, Vpspris Upcins 3/2V
=
- =

secondary winding,
v nV
= u vpse)
=
- 1.7
P(sec) p(pris PCont]
2x3/2
=
=

624V
=
- 0.7

2 V =
- 0.7 = 24.3V
Pont) P(sec)

=624 - 1.7 (b) Minimum PIU rating,

= 623.3V
PIV = 2V 49.7
waves pCont)
e.g. 2.5vp =
15V(full
2x24.3
=
+ 0.7
2vp 9.55V 49.3V
v
AVG
=

i
2515
= =
=

=55 + 100%. R. P v
pcpris
ocins-
v = 160V

63.67%0
= n 0.5
=

Vpcombs vpcsea
=
- 1.7 (half waves

vpcsec) nVp(pri) =

R.PVp 155V =
2.5 x 168
=

= 80V
V
p(oub) vp(sec)
=
- p.7(full wave)

=98.51.
2vp
Vava 2x55
=
=

V Vp(sec)
=
- 0.7
ocoub]
155

63.66%.08v.
=
cos
of
full wave
=
8 - 1.7

= 39.3V

p IV =
2V + 9.7
p(oub)
=2x39.3 + 0.7
79.3V
=
 full-wave rectifier
Bridge
Idea = v =
V (Ideal)
pout) pCsec)
Practical - V 1.4V(Diode drops included)
VpCoubi
-

PCsec]

0Iv V =
+1.7
p(out)

Positive half-cycles), and D conduct current

Negative half-cycle - and D,conduct current

e.g. 2.7 VpcsecsJ2V =

rms

= 52
12 x

16.97V
=

V V =
-

1.4
pCoub) p(sec)
16.97
=
1.4 -

15.57V
PIV
=

= V 40.7 15.57 + 1.7 16.27V=

=

P(0ub)

R.PVpcsec) 12V =

rm/

12x38
=

42.43V
=

V
pCoub) Vpcsecs-1.4 (For
=
practical model)

42.43
=
-
1.4
= 41.83V

pIV V
=
0.7
poub]
41.73
=
+ 0.7
= 41.73V
e.g.
2.8 n 1 01
=
=
R.PV EV
=
, n01
18 p(pri) rms

V EV
=
52x12P
=

ocpris rms
= 169.7V
52 x 120
=

= 169.7V
Vp(sec) nVp(pris=

V nV
=
0.1 x169.7
=

p(sec) pcpvi)
= 16.97V
2.1x169.7
=

=16.97V
Vpcrect VPCs =

ec)
-
1.4

V 1.4 16.97 1.4

ocrect-Uplouts-Vpcsecs
-
-

= 15.57V
= 16.97-1.4

(rRc) Upcrects
15.57V
=
V =

v(pp)

vcpp) (oc) pcrects

=

=
1
x 15.57
120x2.2x103x220 10' x

1.817V
1204220 15.57
x =
=

x 1000x100
= 7.59V

vec (1 c0R.c) create

-

15.57
(1 2x128x228 18 3)
=
-
+
-

15.28V
=

Ripple Pactor, veVrcppl

V
①C

= 2.59
15.28
0.859 x188%.
=

= 3.9%.
percent Regulation
Line
regulation =
(5V,us)
Vin
+ 199-

(AVNn-1 (
x191
Load
regulation =

V output voltage with no load

with
Voutput voltage full (maximums load

e.g.
2.9
vp = 5.
1SV,v8L =
5.15V
eg2.8 ocoubi=(0**.)xVpcins
V

(VN y(400 180x193

-

regulation (104(93 1284193)+19

Load = - =

+
9.09U half
FL =
(positive cycles
5.155.15)x18))
(5.18
-

At negative half
cycle =-p.7V
1.58%
=

0.0
VN 24.8V,Vpc
= 23.9V
=
R. P V
PCoud)
=( R,P( x v

tRL PCin)

(vv -VoL
(x(1)-
3
105 x/8 x17
Load
regulation =

(1x/03 100x103 I
=

9.9V(positive
FL
half
=
cycles
=(24.8-23.9)
23.9
(121%.
At negative half cycle =-0.70
= 3.765%.

For positive limiter

v V
=
+9.7
out BIAS

For negative limiter

Vony -
=

Vp+ys - 17
 VBIAS (BR,
For positive limiter, 12
e.ggill
V

2
=

supply
v V
=
+1.7
12
BIAS
(+;220)
out
- +
19 1.7
=
+

19.7V
=
=
8.25V

For negative limiter, For positive limiter,

v =
-
V -
0.7 V = V +1.7
out BIAS (out) BIA j
=
-
18 0.7
-
=
8.25 +
0.7
=
-
18.7V =
+ 8.95V

----
1l.7V
+ +8.951.
D ↑
-
107V- - - - -

-
18V...--

Volbage- Divider BIAS R.P(eb

R = 1005

VBAS (RR) *Vsupply

=

-35x5 (pB3)Vsup
=

y (u)(40))
= 12
+

= 6V

for positive limiter,

V
out VIAs
=
+1.7

6 + 0.7
=

+6.7V
=

+6.7N . . .

- 18V.. -
e.g.3.1

v 52mV,15z 5mA
= =

zener impedance, Zz =

DVz- for a

R.P.
AV 10mV,11z=
=
20mA

zener impedance, Zz
vz-l
=
ore

, -.....
AVz VzxX. AT
...c =
x

Xc .....mV/.C => AVz TxAT

-
=

nominal (at 15C)

v the
z
= zener voltage
I temperature coefficient

* I
change in temperature from 25C

For positive Ic,V + AV

For negative , Vz-AV=

 0.05%./c
e.g.3.2vz 8.2V(252), T =
=

0.0885/C
=

4
25.),p 60c
=
=

V
(ab 60c) =?
AVz V1X.XAT =

= 8.2x8.0885x(68 -

255
144mV/
=

For positive c, Vz V AVz = +

8.2 + 8.144
=

8.344V
=

R.P. V
z
=12V, c = 1.875y1c =0.00075/c

AT 582 =
-

25c 25.c =

vz vz X,
= + x DT

= 12x9.88875x25
=
225mV

For positive (c,vz V =

AV
+

=
12 + 0.225
= 12.225V

zener power dissipation and

devating Maximum de power dissipation,
Pp vz
=

Maximum devated power,

P
ecderated
-
Pemaxe -
(mW/ c) AT

do dissipation
Pederated) -maximum power

AT change in temperature
Devating factor is expressed in mN/C
e.g. 3.3 P 482mW,1T 91
= =
- 58 =45C
P(max)
117
page.

PCoerabeds Poomaxi-(mW/C)
O - AT

= 480mW -(3.2mW(((x 40C

= 488mW-128mW
272mN
=

R..P O P
=
-
(mN/2) AT
plderated) P(max)

=50000mN-(500mW/cs (161 -
75)
= 7500uN

e.g.3.4zz 3.55,vz =

+
=
6.8V,5z +
=37mA R. P
zz 422,AVz 12V,7z
=

1
=

+
21mA
=

At 5 50mA
=
At
1z 12mA,
=

= 3
11 1 -
1
15z 5z
=

=
-
1 2 z zT
2T 17
=
- 2/
= 50m 37m -

=
- 1mΔ
13m A
1Vz A5z
=

xz
AVz A5 xz
=
z
=

11)x10 3x9
-
=
=
(
=
=

=13m x 3.5 = - 99mV

45.5mV
V 12 + ( 99m) 11.901V
1V
=

v + -

=
= =

At 1 25m A
=
zT
= /

15 1
=
- 1 165z 30mA,
=
-> z zT

-
25m
12mA
37m -

15z 11 =
-

12T
=

= 38 -
2/
9mA
AV A5zxzz =
=

(-12m)
=

-
= 42mV
x 3.5
A0z 15x7 =

z z

+1Vz
At
5z 50mA,Vz 2
V= =
+
6.8
= 45.5m 6.85V
+
= 9m+9
=

8/mV
=

A1
25mA,Vz Vz +1Vz 6.8 + 2 42m) 6.76V
Vz VzT 1V 12 + 8(x10-3 12.081V
+ -
+
= = = =
= = =

z
2.93.51N4733A R.P. 1N4736 A

2
=
75,v 5.1V,52=49mA, R=1008r,
=
=

PD(max) 1N,Jzk 1mA

=
=
V
=6.8V,1z 37mA,zz 3.58,52k 1mA,B(max)
= =
=
= (N

(minis 15z =1z -=K 15 52 32k

z
=
-

= 49m 1m -
= 37 -
1
= 48mA 36mA
=

AVz 11 Xzz
=

-
AVz AVzzz=

48m 36 x 18 3x3.5
-

= x 7 =

= 336mV = 126mV
↳minimum geiza 1.126V
=

v
out vz AVz
= -

AV
5.1
=
-
1.336
vz Vu y Vz
+
=
=
-

4.764V
= 6.8
= 0.126 -

6.674V
=I2k
=

V R =
1m x 10) 0. NN
=

Rain) V -V +V
IN(mins R(min) out

IN(min) VRamins
V +V = I
=
R + V
out zK out
3
4.764 3.5x(8 +188 6.674
-

8.1
=
+
=
+

4.864V
=
7.924V
=

APacmax) 196mA Po(max) 147m A

z,
I 1
v
= =
= =

=
=

zN zM
V 6.8
z

A5z Izm
(max)
=
-
1
z
As
z IzN Fz
=
-

=196m.49m = 0147 -
8.137
= 147mA = 0.11 A
↳ maximum goodie.
V
out Vz AV
=
+

AVz A5zzz =

5.1 + 1.829
=
8.11x3.5
=

= 6.129V = 8.385V

1 196mx108 19.6V
1Vz 6.8 + 0.385 = 7.185V
V
R(max)
=

znR = - v
out
1
=
+
=

-
V
znR 2(47x(0) 14.7V
= =

VRCmax) Vow
V =
19.6
= + 6.129 = 25.73V RCmax)
INCmax) V
VR(max) Vout 14.7 7.185=21885V
* +

= =

IN(max)
For I AV A5
z = zzz
<1) AX =
1 -
I =
6.75mx14

(23125
= 8.235/
AV
Vous v =
-

23xV = V - AV 15
=
-
8.235
t
on z z
14.765V
Pp(max)
=

<4)]
Px(max)
=

zNv 1 66.67mA
z zM
=

V
=

1 =

For I
Z

=N

I -
75>A5z =

2Mz
at
IzM
15
(6>AVz A52zz =

z
12m 1z
=
-

(7)
Vou V t
=
AV
+

Z
=

49.67mA
17m
66.67m -

V-N Vz
=

<8772n 1
-

=
=

AVz A5zz
,

R =

<9) R VIN-Vz
= VIN -Vout
=

* I = 49.67m x 14
= M =M 0.695V
=

<(8) VN -Vz VN Vout

5.
-

=
=

V
R R
out V 1Vz
=
+

<(1)5z 1,7zK =

15 + 0.695
=

=
15.695V

2.93.7VIN=24V (/N4744A diode from datasheet)

zener
(b) R YN
Yut -

24V
=
R
v
=
15V,5 =1
0.25mA, PeCmax) (N,5 17m(,z
= =

z
=
z
14R
=

SzM M
Vout
15.695/
V 1318
(a) V of # and =
24 -
15.695 IN X5zm 66.67mA
=

out zK zM 66.67m =
(b) R =? 124.519
=

(c) R =
? R 1302 (nearest
=
larger than standard values
L(oin)
At I (c) I
VN
-

Vont
(a)
2K =
+

R
=

(4.765 7m A =

A5z 7z

foes....and
1
=
-

zk
S. 11 821 7m 0.25m
=
-
=
= 50.78md

= 17m -1.25m V
16.75mA
=
R =
out
14.765
=
=
2095
L(min) f 70.75m
L
zener Limiter

Basic Zener
limiting action with a sinusoidal input voltage.
Yu =
V +9.7(forward bias

Vous -0.7 (Reverse

=
bias

Eg. 3.8(a) Vout=?

Vz =3.3V
v 5.1V
=

=2
For forward bias,
V V
= 1.7
+

out
=2
5.1 + 0.7
=

=
5.8V

Forreverse
V isre
z1
=
-
3.3- 0.7
-
=
4V

(b) =?
V)
v 6.2V=

z,
v 15V
=

=2
For forward bias↓
V V
=
+
0.7 6.2 +8.7=
=
6.9V
z,
+

-u

For reverse bias,

Vz 0.7 15 07 15.7V
Vat
- -
= -
=
= =
The Varactor Diode
diode
symbol of varactor

C AC
=

c
capacitance
=

A plate area

②= dielectric constant
d= plate separation
(R
S
=

CR=capacitance ratio

C C measured v
at = 2V
= R
measured 20V
C = C
vp
at =

f 2 ic
=

=resonant frequency