SMD Type Thyristor

Low Power Use

Non-Insulated Type,Glass Passivation Type
CR08AS

Features
IT(AV) :0.8A
VDRM :400V/600V
IGT :100 A

1 GATE
2 ANODE
3 CATHODE

Absolute Maximum Ratings Ta = 25

Parameter Symbol CR08AS-8 CR08AS-12 Unit
Repetitive peak reverse voltage VRRM 400 600 V
Non-repetitive peak reverse voltage VRSM 500 720 V
DC reverse voltage VR(DC) 320 480 V
Repetitive peak off-state voltage *1 VDRM 400 600 V
DC off-state voltage *1 VD(DC) 320 480 V
RMS on-state current IT(RMS) 1.26 A
Average on-state current IT(AV) 0.8 A
Surge on-state current ITSM 10 A
2
2
I t for fusing It 0.42 A2s
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG(AV) 0.1 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj -40 to +125
Storage temperature Tstg -40 to +125
*1 With Gate-to-cathode resistance RGK=1k

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 SMD Type Thyristor

CR08AS

Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ. Max Unit
Repetitive peak reverse current IRRM Tj=125 , VRRM applied,RGK=1k 0.5 mA
Repetitive peak off-state current IDRM Tj=125 , VDRM applied, RGK=1k 0.5 mA
On-state voltage VTM Ta=25 , ITM=2.5A, instantaneous value 1.5 V
Gate trigger voltage VGT Ta=25 , VD=6V, IT=0.1A*1 0.8 V
Gate non-trigger voltage VGD Tj=125 , VD=1/2VDRM, RGK=1k 0.2 V
*2
Gate trigger current IGT Tj=25 , VD=6V, IT=0.1A *1 1 100 A
Holding current IH Tj=25 , VD=12V, RGK=1k 1.5 3 mA
Thermal resistance Rth (j-a) Junction to ambient 65 W

*1 IGT, VGT measurement circuit.

*2 If special values of IGT are required, choose at least two items from those listed in the table below.

Item A B C
IGT ( A) 1 to 30 20 to 50 40 to 100

Marking
NO. CRO8AS-8 CRO8AS-12
Marking AD AF

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

102 10
7 Ta = 25°C
SURGE ON-STATE CURRENT (A)

5 9
ON-STATE CURRENT (A)

3 8
2
7
101
7 6
5
3 5
2
4
100
7 3
5
2
3
2 1
10–1 0
0 1 2 3 4 5 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

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SMD Type Thyristor

CR08AS
GATE TRIGGER CURRENT VS.
GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
102 103
7 7 TYPICAL EXAMPLE
5
5
3
2 3
VFGM = 6V PGM = 0.5W 2
101
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

GATE TRIGGER CURRENT (Tj = t°C)
7
5 102
3 PG(AV) = 0.1W 7
2 5
VGT = 0.8V
100 3
7 IGT = 100µA
5 2
3 (Tj = 25°C)
2 101
7
10–1 5
7 VGD = 0.2V
5 IFGM = 0.3A 3
3 2
2
10–2 100
10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3 –40 –20 0 20 40 60 80 100 120 140 160

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE VS. (JUNCTION TO AMBIENT)
JUNCTION TEMPERATURE
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
TRANSIENT THERMAL IMPEDANCE (°C/W)

1.0 103
7 25 25 t0.7
0.9
,,,,,,,,,,,,, 5 ALUMINUM BOARD
GATE TRIGGER VOLTAGE (V)

DISTRIBUTION
0.8
,,,,,,,,,,,,,
,,,,,,,,,,,,,
TYPICAL EXAMPLE
3 WITH SOLDERING
2

,,,,,,,,,,,,,
0.7
102

,,,,,,,,,,,,,
0.6 7
5
0.5
0.4
,,,,,,,,,,,,,
,,,,,,,,,,,,,
3
2

0.3
0.2
,,,,,,,,,,,,,
,,,,,,,,,,,,,
101
7
5
3
0.1 2
0 100
–40 –20 0 20 40 60 80 100 120 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100

JUNCTION TEMPERATURE (°C) TIME (s)

ALLOWABLE AMBIENT TEMPERATURE VS.

MAXIMUM AVERAGE POWER DISSIPATION AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE) (SINGLE-PHASE HALF WAVE)
1.6 160
AVERAGE POWER DISSIPATION (W)

θ = 30° 60° 90° 120° 25 25 t0.7

AMBIENT TEMPERATURE (°C)

1.4 180° 140 ALUMINUM BOARD θ

WITH SOLDERING
1.2 120 360°
RESISTIVE,
1.0 100 INDUCTIVE
LOADS
0.8 80
NATURAL
CONVECTION
0.6 60
θ = 30° 90° 180°
0.4 40
θ
60° 120°
0.2 360° 20
RESISTIVE, INDUCTIVE LOADS
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

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 SMD Type Thyristor

CR08AS
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE) (SINGLE-PHASE FULL WAVE)
160 1.6

AVERAGE POWER DISSIPATION (W)

RESISTIVE,
INDUCTIVE θ = 30° 60° 90° 120°
AMBIENT TEMPERATURE (°C)

140 1.4
LOADS θ 180°
120 360° 1.2
NATURAL
CONVECTION
100 θ = 180° 1.0

80 65°C/W 0.8

60 0.6
90°C/W
40 0.4
θ θ
20 0.2 360°
Rth(j – a) = 200°C/W
RESISTIVE LOADS
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

ALLOWABLE AMBIENT TEMPERATURE VS.

AVERAGE ON-STATE CURRENT MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE) (RECTANGULAR WAVE)
160 1.6
AVERAGE POWER DISSIPATION (W)

25 25 t0.7 90° 180°

θ = 30° 60° 120° 270°
AMBIENT TEMPERATURE (°C)

140 ALUMINUM BOARD 1.4

WITH SOLDERING θ θ DC
120 360° 1.2
RESISTIVE LOADS
100 1.0
NATURAL
80 CONVECTION 0.8

60 0.6 θ
40 0.4 360°
60° 120° RESISTIVE,
20 θ = 30° 90° 180° 0.2 INDUCTIVE
LOADS
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

ALLOWABLE AMBIENT TEMPERATURE VS.

AVERAGE ON-STATE CURRENT BREAKOVER VOLTAGE VS.
(RECTANGULAR WAVE) JUNCTION TEMPERATURE
160 160
100 (%)

25 25 t0.7 TYPICAL EXAMPLE

AMBIENT TEMPERATURE (°C)

140 ALUMINUM BOARD 140

WITH SOLDERING θ
120 360° 120
BREAKOVER VOLTAGE (T j = 25°C)
BREAKOVER VOLTAGE (T j = t°C)

RESISTIVE,
100 INDUCTIVE 100
RGK = 1kΩ
LOADS
80 80
NATURAL
60 CONVECTION 60

40 40
θ = 30° 60° 120° 270°
20 20
90° 180° DC
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 –40 –20 0 20 40 60 80 100 120 140 160

AVERAGE ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C)

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SMD Type Thyristor

CR08AS
BREAKOVER VOLTAGE VS. BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE RATE OF RISE OF OFF-STATE VOLTAGE

100 (%)
100 (%)

120 160
TYPICAL EXAMPLE TYPICAL EXAMPLE Tj = 125°C
140 RGK = 1kΩ
100

BREAKOVER VOLTAGE (dv/dt = 1V/µs )

BREAKOVER VOLTAGE (dv/dt = vV/µs )
120
BREAKOVER VOLTAGE (RGK = 1kΩ)
BREAKOVER VOLTAGE (RGK = rkΩ)

80
100

60 80

60
40
40
20
20
Tj = 125°C
0 0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

GATE TO CATHODE RESISTANCE (kΩ) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

HOLDING CURRENT VS. HOLDING CURRENT VS.

JUNCTION TEMPERATURE GATE TO CATHODE RESISTANCE
101 500
100 (%)

7 DISTRIBUTION TYPICAL EXAMPLE

,,,,,,,,,,,
5 TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)

,,,,,,,,,,,
IGT (25°C) = 35µA
HOLDING CURRENT (mA)

3 400 # 1 25µA 0.9mA

,,,,,,,,,,,
2
HOLDING CURRENT (RGK = 1kΩ)
HOLDING CURRENT (RGK = rkΩ)

,,,,,,,,,,,
100
7

,,,,,,,,,,,
300
5
3
2 ,,,,,,,,,,, 200
10–1
7 #1
5
100
3
2
RGK = 1kΩ Tj = 25°C
10–2 0
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) GATE TO CATHODE RESISTANCE (kΩ)

HOLDING CURRENT VS.

GATE TRIGGER CURRENT TURN-ON TIME VS. GATE CURRENT
4.0 102
Tj = 25°C 7 TYPICAL EXAMPLE VD = 100V
3.5 5 RL = 47Ω
HOLDING CURRENT (mA)

3 RGK = 1kΩ
3.0 2
TURN-ON TIME (µs)

Ta = 25°C
101
2.5 7
5
2.0 3
2
1.5
100
7
1.0 5
3
0.5 2
0 10–1
100 101 102 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

GATE TRIGGER CURRENT (µA) GATE CURRENT (mA)

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 SMD Type Thyristor

CR08AS
TURN-OFF TIME VS. REPETITIVE PEAK REVERSE VOLTAGE VS.

100 (%)
JUNCTION TEMPERATURE JUNCTION TEMPERATURE
40 160
VD = 50V, VR = 50V TYPICAL EXAMPLE
35 IT = 2A, RGK = 1kΩ 140

REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C)

REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C)
TURN-OFF TIME (µs)

30 TYPICAL EXAMPLE 120

,,,,,,,,,,,
,,,,,,,,,,,
25 DISTRIBUTION 100

,,,,,,,,,,,
20

,,,,,,,,,,,
80

,,,,,,,,,,,
15 60

,,,,,,,,,,,
10

,,,,,,,,,,,
5
40

20

0 0
0 20 40 60 80 100 120 140 160 –40 –20 0 20 40 60 80 100 120 140 160

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

GATE TRIGGER CURRENT VS. THERMAL IMPEDANCE VS.

GATE CURRENT PULSE WIDTH BOARD DIMENSIONS
104 320
100 (%)

7 Tj = 25°C
5
THERMAL IMPEDANCE (°C/W)

TYPICAL EXAMPLE 280

3 IGT (DC)
2 # 1 10µA 240
GATE TRIGGER CURRENT (DC)
GATE TRIGGER CURRENT (tw)

103 #1 # 2 65µA WITHOUT EPOXY PLATE

7 #2 200
5
3 160
2
120
102
7
5 80
3 t0.7
2 40 10×10 EPOXY PLATE ALUMINUM
WITH COPPER FOIL BOARD
101 0
100 2 3 4 5 7 101 2 3 4 5 7 102 0 10 20 30 40 50 60 70 80

GATE CURRENT PULSE WIDTH (µs) BOARD DIMENSIONS (mm)

REGULAR SQUARE ONE SIDE

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