SEMICONDUCTOR 24N50 Series RoHS

RoHS
Nell High Power Products
N-Channel Power MOSFET
24A, 500Volts

DESCRIPTION
D
The Nell 24N50 is a three-terminal silicon device
with current conduction capability of 24A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 500V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as 1
switched mode power supplies, DC to DC converters, G 2
D 3
PWM motor controls, bridge circuits and general S
purpose switching applications. TO-3PB TO-247AB
(24N50B) (24N50C)
D (Drain)

FEATURES
RDS(ON) = 0.2Ω @ VGS = 10V
G
Ultra low gate charge(120nC Max.) (Gate)

Low reverse transfer capacitance

(C RSS = 55pF typical) S (Source)

Fast switching capability

100% avalanche energy specified PRODUCT SUMMARY
Improved dv/dt capability ID (A) 24
150°C operation temperature VDSS (V) 500
RDS(ON) (Ω) 0.2 @ V GS = 10V
QG(nC) max. 120

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 500
V DGR Drain to Gate voltage R GS =20KΩ 500 V

V GS Gate to Source voltage ±30

T C =25°C 24
ID Continuous Drain Current
T C =100°C 15.2
A
I DM Pulsed Drain current(Note 1) 96
I AR Avalanche current(Note 1) 24

E AR Repetitive avalanche energy(Note 1) l AR =24A, R GS =50Ω, V GS =10V 29

mJ
E AS Single pulse avalanche energy(Note 2) l AS =24A, L =3.4mH 1100

dv/dt Peak diode recovery dv/dt(Note 3) 15 V /ns

TO-247AB 290 (2.33)

PD Total power dissipation ( derate above 25 ° C) T C =25°C W( W / ° C )
TO-3PB 270 (2.2)

TJ Operation junction temperature -55 to 150

T STG Storage temperature -55 to 150 ºC

TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300

Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)

Note: 1. Repetitive rating: pulse width limited by junction temperature.

2 . l AS =24 A, L =3.4 mH , V DD =50 V , R GS =25 Ω , starting T J =25 °C.
3 . I SD ≤ 24 A, di/dt ≤ 350 A/µs, V DD ≤ V (BR)DSS , starting T J = 25 °C.

www.nellsemi.com Page 1 of 7
 SEMICONDUCTOR 24N50 Series RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
Rth(j-c) Thermal resistance, junction to case 0.43
Rth(c-s) Thermal resistance, case to heat sink 0.24 ºC/W
Rth(j-a) Thermal resistance, junction to ambient 40

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT

OFF CHARACTERISTICS

V(BR)DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V 500 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 250μA, V DS =V GS 0.53 V/ºC

V DS =500V, V GS =0V T C = 25°C 50

I DSS Drain to source leakage current μA
V DS =400V, V GS =0V T C =125°C 500

Gate to source forward leakage current V GS = 30V, V DS = 0V 100

I GSS nA
Gate to source reverse leakage current V GS = -30V, V DS = 0V -100

ON CHARACTERISTICS
R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 12A 0.16 0.2 Ω
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 3 5 V
g fs Forward transconductance V DS = 50V, l D = 12A (Note 1) 22 S

DYNAMIC CHARACTERISTICS

C ISS Input capacitance 3500 4500

C OSS Output capacitance V DS = 25V, V GS = 0V, f =1MHz 520 670 pF

C RSS Reverse transfer capacitance 55 70

SWITCHING CHARACTERISTICS

t d(ON) Turn-on delay time 80 170

tr Rise time V DD = 250V, V GS = 10V 250 500
ns
t d(OFF) Turn-off delay time I D = 24A, R GS = 25Ω (Note1,2) 200 400

tf Fall time 155 320

QG Total gate charge 90 120

V DD = 400V, V GS = 10V
Q GS Gate to source charge 23 nC
I D = 24A, (Note1,2)
Q GD Gate to drain charge (Miller charge) 52

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
VSD Diode forward voltage I SD = 24A, V GS = 0V 1.4 V
Is (Is D ) Continuous source to drain current Integral reverse P-N junction 24
diode in the MOSFET
D (Drain)

A
I SM Pulsed source current 96
G
(Gate)

S (Source)

t rr Reverse recovery time I SD = 24A, V GS = 0V, 250 ns

dI F /dt = 100A/µs
Q rr Reverse recovery charge 1.1 μC

Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.

www.nellsemi.com Page 2 of 7
 SEMICONDUCTOR 24N50 Series RoHS
RoHS
Nell High Power Products

ORDERING INFORMATION SCHEME

24 N 50 B

Current rating, ID
24 = 24A

MOSFET series
N = N-Channel

Voltage rating, VDS

50 = 500V

Package type
B = TO-3PB
C = TO-247AB

■ Gate charge test circuit & waveform

V GS
Same Type Qg
50KΩ
12V 200nF
as D.U.T.
300nF 10V
V DS Q gs Q gd
V GS

(D.U.T)
3mA

Charge

■ Resistive switching test circuit & Waveforms

RL V DS
V DS 90%
V DD
V GS
RG

D.U.T. 10%
V GS
10V
t d(ON) tr t d(OFF) tf
t on t off

www.nellsemi.com Page 3 of 7
 SEMICONDUCTOR 24N50 Series RoHS
RoHS
Nell High Power Products

■ Unclamped lnductive switching test circuit & Waveforms

L
V DS E AS =
1 BV DSS
L l AS 2
2 BV DSS - V DD
BV DSS
lD
l AS
RG
V DD
l D (t)
D.U.T.
10V V DD V DS (t)
tp
Time
tP

■ Peak diode recovery dv/dt test circuit & Waveforms

Gate Pulse Width

+ V GS D=
D.U.T. Gate Pulse Period
(Driver) 10V
V DS
l FM , Body Diode Forward Current
-
di/dt
I SD l SD
L (D.U.T) l RM

Body Diode Reverse Current

Driver
RG
Same Type Body Diode Recovery dv/dt
as DUT V DD
V DS V SD V DD
V GS * dv/dt controlled by R G (D.U.T)
* l SD controlled by pulse period

Body Diode
Forward Voltage Drop

www.nellsemi.com Page 4 of 7
 SEMICONDUCTOR 24N50 Series RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS

Fig.1 On-State characteristics Fig.2 Transfer characteristics

10 2
Drain Current, l D (A)

Drain current, l D (A)

150ºC
10 1
10 1
25ºC
-55ºC

10 0

10 0 Note:
1. V DS = 50V
2. 250µs Pulse Test
10 -1
10 -1 10 0 10 1 2 4 6 8 10

Drain-Source voltage, V DS (V) Gate-Source voltage, V GS (V)

Fig.3 On-Resistance variation vs. Drain Fig.4 Body diode forward voltage variation
current and gate voltage with source current and temperature
Drain-Source On-Resistance, R DS(ON) (Ω)

0.6 10 2
Reverse drain current, l DR (A)

0.5
V GS = 10V 150ºC

0.4 10 1
V GS = 20V

0.3
25ºC

0.2 10 0

0.1 Note:
Note: 1. V GS = 0V
T J = 25°°C 2. 250µs Pulse Test
0.0 10 -1
0 20 40 60 80 100 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Drain current, I D (A) Source-Drain voltage, V SD (V)

Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics

7000 12
C iss = C gs +C gd ( C ds = shorted )
C oss = C ds +C gd V DS = 100V
Gate-Source voltage,V GS (V)

6000 C rss = C gd 10 V DS = 250V

V DS = 400V
Capacitance (pF)

5000 C iss
8
4000 C oss
6
3000
Note: 4
2000 C rss 1. V GS = 0V
2. f = 1 MHz
2
1000
Note: l D = 24A
0 0
10 -1 10 0 10 1 0 20 40 60 80 100

Drain-Source voltage, V DS (V) Total gate charge, Q G (nC)

www.nellsemi.com Page 5 of 7
 SEMICONDUCTOR 24N50 Series RoHS
RoHS
Nell High Power Products
Fig.7 Breakdown voltage variation vs. Fig.8 On-Resistance variation vs.
Temperature Temperature

1.2 3.0
Drain-Source breakdown voltage,

Drain-Source On-Resistance,
2.5

R Ds(ON) (Normalized)
1.1
BV Dss (Normalized)

2.0

1.0 1.5

1.0
0.9
Note:
Note: 0.5
1. V GS = 0V 1. V GS = 10V
2. l D = 250μA 2. l D = 12A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Junction temperature, T j (°C) Junction temperature, T J (°C)

Fig.9 Maximum safe operating area Fig.10 Maximum drain current vs.
Case temperature

25
Operation in This Area is
Limited by R DS (on)

10 2 20
Drain current, l D (A)

10μs
Drain current, l D (A)

100μs
15
1ms
10 1
10ms

DC
10

10 0
Note: 5
1.T C = 25°C
2.T J = 150°C
3.Single Pulse
10 -1 0
10 0 10 1 10 2 10 3 25 50 75 100 125 150

Drain-Source voltage, V DS (V) Case temperature, T C (°C)

Fig.11 Transient thermal response curve

Thermal response R th(J-C) (t)

D = 0.5

10 -1 0.2

0.1 P DM
0.05 t1
t2
0.02 Notes:
0.01 Single pulse
10 -2 1. Rth(j-c) (t) = 0.43°C/W Max.
2. Duty factor, D = t1/ t 2
3. TJM - TC = PDM * Rth(j-c) (t)

10 -5 10 -4 10 -3 10 -1 10 0 10 1

Square wave pulse duration, t 1 (sec)

www.nellsemi.com Page 6 of 7
 SEMICONDUCTOR 24N50 Series RoHS
RoHS
Nell High Power Products

TO-3PB

5.0 ±0 . 2
15.6±0.4 4.8±0.2

2.0

1.8
9.6 2.0±0.1

19.9±0.3

4.0

Φ3.2 ± 0,1

2
20.0 min

4.0 max

3
+0.2 +0.2
1.05 -0.1 0.65 -0.1

5.45±0.1 5.45±0.1 1.4

G D S
D (Drain)

1 2 3

G
(Gate)

All dimensions in millimeters S (Source)

TO-247AB

4.69 (0.185)
15.49 (0.610) 5.31 (0.209)
16.26 (0.640) 1.49 (0.059)
2.49 (0.098)
5.38 (0.212)
16.15 (0.242)
6.20 (0.244)
Drain

20.80 (0.819)
21.46 (0.845)
3.55 (0.138)
3.81 (0.150)

G D S
2.87 (0.113)
4.50 (0.177)Max
3.12 (0.123)
1.65 (0.065) 0.40 (0.016)
(TYP.)
19.81 (0.780) 2.13 (0.084) 0.79 (0.031)
20.32 (0.800)
1.01 (0.040)
1.40 (0.055)
(TYP.)

2.21 (0.087)
5.45 (0.215) 5.45 (0.215) 2.59 (0.102)

D (Drain)

G
(Gate)
All dimensions in millimeters(inches)
S (Source)

www.nellsemi.com Page 7 of 7