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3 - Vertical MOSFETs
3 - Vertical MOSFETs
Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power.
Exhibit high switching speed and can work much better in comparison with other normal
MOSFETs in the case of low voltage levels.
Operating principle is similar to that of any other general MOSFET.
Power MOSFETs which are most widely used are n-channel Enhancement-mode or p-channel
Enhancement-mode or n-channel Depletion-mode in nature.
Here the channel is formed in a p-type region when the gate-to-source voltage is made positive. Most
importantly, here, the Source (S) terminal is placed over the Drain (D) terminal forming a vertical structure.
As a result, in VDMOS the current flows beneath the gate area vertically between the source and the drain
terminals through numerous n+ sources conducting in-parallel.
As a result, the resistance offered by the device during its ON state (RDS(ON) ) is much lower than that in
the case of normal MOSFETs which enable them to handle high currents.
Further, there are a wide variety of power MOSFET structures like Vertical
Diffused MOS (VDMOS) or Double-Diffused MOS or DMOS, UMOS or Trench-
MOS, VMOS, etc.
Department of Electronics And Communication Engineering
Dr. Sudhir Chandra Sur Institute of Technology
And
Sports Complex
Estd.2009
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PC-EE 302, ANALOG ELECTRONICS
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