THE COPPERBELT UNIVERSITY

SCHOOL OF ENGINEERING
ELECTRICAL DEPARTMENT
COURSE: POWER ELECTRONICS AND DRIVES (MC510) TEST I
DATE: Mr. MUGALA
DURATION: 2 hours
TOTAL MARKS: 40
INSTRUCTIONS:
 Attempt all questions.
 Illustrate your answers with suitable diagrams where necessary and show all essential
working.

QUESTION ONE

Answer the following about the Diode and SCR.

A) Draw the turn off characteristics of both the IGBT and MOSFETs
[2marks]
B) Draw the V.I characteristic of both IGBT and MOSFETs
[2marks]
C) Draw the transistor model of the GTO and derive the Anode Equation from the transistor
model
[6marks]

QUESTION TWO

Fig.3.1 Half wave single phase controlled rectifier.

In the rectifier shown in Fig.2.1 it has a load of R=15  and, Vs=230 sin 314 t and unity
transformer ratio. If it is required to obtain an average output voltage of 80% of the maximum
possible output voltage, calculate: -
(a) The firing angle,
[6marks]
(b) The efficiency,
[2marks]
(c) Ripple factor [1mark]
(d) Form Factor [1mark]

1
QUESTION THREE

A Three phase full wave diode bridge rectifier has a pure resistive load R=15Ω
Determine the following;

(a)Draw the rectifier and explain principle operation of it

[1mark]
(b)Derive the expression for the average output voltage
[2marks]
(c) calculate the rectification efficiency of the converter
[7marks]

QUESTION FOUR

A Three phase half wave controlled rectifier has a pure resistive load R=15Ω at the firing angle of 40deg
Determine the following;

(a)Draw the rectifier and show the conduction table for firing thyristors
[3mark]
(b)Draw the graphs of Vs(t),Vo(t), Io(t)
[2marks]
(c) calculate the rectification efficiency of the converter
[5marks]