LECTURE: MEMS

SENSORS AND DEVICES

TS. Nguyễn Chí Cường 1
KHOA CÔNG NGHỆ ĐIỆN BỘ MÔN ĐIỀU KHIỂN TỰ ĐỘNG
TRƯỜNG ĐẠI HỌC CÔNG NGHIỆP TP.HCM
Date: March 5th, 2023
Email: nguyenchicuong@iuh.edu.vn 3/3/2023
Outline of Lecture

1. MEMS Sensors and Devices

2. Basic Electrical Components

3. Basic Sensing Mechanisms

4. Case studies: MEMS sensors

3/3/2023 2
1. MEMS TRANSDUCERS - SENSORS & ACTUATORS

Processing ICs Sensors Actuators

RF circuits
Memory

In Out
Thermal Thermal
Electrical Electrical
Mechanical Mechanical
Optical Optical
Chemical Chemical
Biological .... Silicon chip
Biological ....

3/3/2023 3
Prof. Dzung DAO, School of Engineering, Griffith University, Queensland Australia
 1. MEMS TRANSDUCERS - SENSORS & ACTUATORS

Sensors are devices that can detect physical variables, such as temperature, light intensity, or
motion, and have the ability to give a measurable output that varies in relation to the amplitude
of the physical variable., such as temperature (thermometer), light intensity, motion, stress and
strain (strain gauge), pressure (pressure sensor).
Transducers are devices that can change one form of energy to another. Such as a
resistance thermometer converts temperature into electrical resistance, or a thermocouple
converts temperature into voltage. Both of these devices give an output that is proportional to
the temperature.
Actuators are devices that are used to control an input variable in response to a signal
from a controller. Examples: actuators that control power to the fans and compressor in an
air-conditioning system in response to signals from the room temperature sensors.
Transmitters are devices used to amplify and format signals so that they are suitable for
transmission over long distances with zero or minimal loss of information. The transmitted
signal can be pneumatic, digital, analog voltage, analog current, or as a radio frequency (RF)
3/3/2023 4
modulated signal.
 1.1 MEMS SENSORS
MEMS sensors fabricated based on micro-machined technology.
Measure some parameters and (generally) provide an electrical output that relates to
the parameters they measure.
Based on type of input, sensors can be classified as follows:
 Mechanical Sensors (mass, force, pressure, displacement, velocity, stress, acceleration, flow)
 Thermal Sensors (temperature, heat flow)
 Chemical (concentration, composition, reaction rate)
 Biosensors (neuron, DNA, glucose, etc )
 Magnetic (magnetic field intensity, flux density)
 Radiant (light or electromagnetic wave intensity)
 Electrical (voltage, current, charge)
Based on the types of output, sensors can be listed as follows
 Mechanical (mass, force, pressure, displacement, velocity, stress, acceleration, flow)
 Electrical (voltage, current, charge)
3/3/2023 5
Outline of Lecture

1. MEMS Sensors and Devices

2. Basic Electrical Components

3. Basic Sensing Mechanisms

4. Case studies: MEMS sensors

3/3/2023 6
 2.1 RESISTANCE
The resistivity (ρ) of a material is the resistance to current flow between the opposite
faces of a unit cube of the material (ohm per unit length). The resistance R of a
component is expressed by
l
R (2.1)
A
where l is the length of the material (distance between contacts), and A is the cross-
sectional area of the resistor; l and A must be in compatible units.
Table 2.1 The resistivity of some common materials

3/3/2023 7
 2.1 RESISTANCE
The resistivity (ρ) is temperature dependence of materials (semiconductor, metal oxides, platinum. etc.), The
variation of resistance with temperature is given by

RT2  RT1 (1  T ) (2.2)

where RT = resistance at temperature T2 , RT = resistance at temperature T1 , α = temperature coefficient of

2 1

resistance, T = temperature difference between T1 và T2.

The variation of resistance with temperature in some materials (platinum) is linear over a wide temperature range.
Hence, platinum resistors are often used as temperature sensors.

The Ohm’s law applies to both dc and ac circuits, and states that in an electrical circuit the electromotive force
(emf) (E) will cause a current I to flow in a resistance R, such that the emf is equal to the current times the
resistance, i.e

E  IR (2.3)

3/3/2023 8
where E = electromotive force in volts (V), I = current in amperes (A), R = resistance in ohms (Ω).
 2.1 RESISTANCE
Power dissipation P occurs in a circuit, whenever current flows through a resistance. The
power produced in a dc or ac circuit is given by

P  EI (2.4)

where P is power in watts. (In ac circuits E and I are rms values).

Substituting Eq. (2.1) in Eq. (2.4) we get
2
E
P  I 2R  (2.5)
R
In an ac circuit the power dissipation can also be given by

P  Ep I p / 2 (2.6)

where Ep and Ip are the peak voltage and current values

Power transmission is more efficient over high-voltage lines at low current than at lower voltages and higher
currents. 3/3/2023 9
 2.1 RESISTANCE
 Resistors can be connected in series, parallel, or a combination of both in a
resistor network.
Resistors in series are connected as shown in Fig. 2.1a, their effective total
value RT is the sum of the individual resistors, and is given by

RT  R1  R2  R3    Rn (2.7)

Resistors in parallel are connected as shown in Fig. 2.1b, (a)

and their total effective value RT is given by

1 1 1 1 1
      (2.8)
RT R1 R2 R3 Rn
(b)
3/3/2023 10
Figure 2.1 Resistors connected in (a) series and (b) parallel.
 2.1.1 WHEATSTONE BRIDGE
The Wheatstone bridge is the most common resistance network developed to measure small changes in resistance and
is often used in instrumentation with resistive types of sensors. The bridge circuit is shown in Fig. 2.2a. Four resistors are
connected in the form of a diamond with the supply and measuring instrument forming the diagonals. When all the
resistors are equal the bridge is balanced, i.e., the voltage at A and C are equal (E/2) and the voltmeter reads zero.

Figure 2.2 Circuit of (a) Wheatstone bridge and

(b) compensation for lead resistance used in
remote sensing.

(b)
(a)

If R2 is the resistance of a sensor whose change in value is being measured, the voltage at A will increase with respect to C
as the resistance value increases, so that the voltmeter will have a positive reading. The voltage will change in proportion to
any changes in the value of R2, making the bridge very sensitive to small changes in resistance. A bridge circuit can also be
used to compensate for changes in resistance due to temperature changes, i.e., if R1 and R2 are the same type of sensing
element, such as a strain gauge and reference strain gauge (see Fig. 2.3). The resistance of each gauge will change by an
equal percentage with temperature, so that the bridge will remain balanced when the temperature changes. If R2 is now used
to sense a variable the voltmeter will only sense the change in R2 due to the change in the variable, as the effects of 11
3/3/2023
temperature changes on R1 and R2 will cancel (Temperature compensation).
 2.1.2 RESISTIVE SENSORS
 Strain Gauges are examples of resistive sensors (see Fig. 2.3a). The resistive conducting path in the gauge is copper or nickel particles
deposited onto a flexible substrate in a serpentine form. When the substrate is bent in a concave shape along the bending axis perpendicular to
the direction of the deposited resistor, the particles are compressed and the resistance decreases. If the substrate is bent in the other direction
along the bending axis, the particles tend to separate and the resistance increases. Bending along an axis perpendicular to the bending axis
does not compress or separate the particles in the strain gauge; so the resistance does not change.

Figure 2.3 (a) strain gauge with reference gauge and (b) strain
gauges used in a Wheatstone bridge.
(a) (b)
 Piezoresistors are also used as strain gauge elements. These devices are made from certain crystalline materials such as
silicon. The material changes its resistance when strained similarly to the deposited strain gauge. These devices can be very
small. The resistance change in strain gauge elements is proportional to the degree of bending, i.e., if the gauge was attached
to a pressure sensing diaphragm and pressure is applied to one side of the diaphragm, the diaphragm bows in relation to the
pressure applied. The change in resistance of the strain gauge attached to the diaphragm is then proportional to the pressure
applied. Figure 2.3b shows a Wheatstone bridge connected to the strain gauge elements of a pressure sensor. Because the
resistance of the strain gauge element is temperature-sensitive, a reference strain gauge is also added to the bridge to
compensate for these changes. This second strain gauge is positioned adjacent to the first so that it is at the same temperature,
but rotated 90°, so that it is at right angles to the pressure-sensing strain gauge element and will, therefore, not sense the 12
3/3/2023
deformation as seen by the pressure-sensing element.
 2.2 CAPACITANCE
Capacitors store electrical charge, as opposed to cells where the charge is generated by chemical action.
Capacitance is a measure of the amount of charge that can be stored. The capacitance of a capacitor is given by

A
C (2.9)
d
where C = capacitance in farads (F), ε = dielectric constant of the material (F/m) between the plates , A = area of
the plates (m2), d = distance between the plates (m).
The dielectric constants of some common materials are given in Table 2.1.
Table 2.1 Dielectric Constants of Some Common Materials

3/3/2023 13
 2.2 CAPACITANCE
The impedance of a capacitor to ac flow is given by

1
XC  (2.10)
2 fC

where XC = impedance to ac current flow, f = frequency of the ac signal, C = capacitance in

farads

The Ohm’s law also applies to ac circuits, so that the relation between voltage and current is
given by

E  IX C (2.11)

where E is the ac voltage amplitude and I is the ac current flowing.

3/3/2023 14
 2.2 CAPACITANCE
Capacitors in series are shown in Fig. 2.5a and have an effective capacitance
given by

1 1 1 1 1
     
CT C1 C1 C1 Cn (2.12)

Capacitors in parallel are shown in Fig. 2.5b and have an effective capacitance
given by

CT  C1  C2  C3    Cn (2.12)

(a) (b)
3/3/2023 15
Figure 2.4 (a) Capacitors connected in series, and (b) capacitors connected in parallel.
 2.3 INDUCTANCE
Inductors are devices that oppose any change in the current flowing through them. The
inductance of a coil is given by

N 2 A
L (2.13)
d
where L = inductance in henries, N = number of turns of wire, m = permeability of the core of the coil (H/m), A = cross sectional
area of the coil (m2), d = length of the coil (m). A henry is defined as the inductance that will produce an emf of 1 V when the
current through the inductance changes at the rate of 1 A/s.

 Inductive impedance to ac current flow is given by

X L  2 fL (2.14)

where XL = impedance to ac current flow, f = frequency of the ac signal, L = inductance in henries.

3/3/2023 16
 2.3 INDUCTANCE
The formula for the effective inductance of inductors connected in series and parallel is the
same as for resistors.
Inductors in series have an effective inductance given by

LT  L1  L2  L3    Ln (2.15)

Inductors in parallel have an effective inductance given by

1 1 1 1 1
      (2.16)
LT L1 L2 L3 Ln
3/3/2023 17
Outline of Lecture

1. MEMS Sensors and Devices

2. Basic Electrical Components

3. Basic Sensing Mechanisms

4. Case studies: MEMS sensors

3/3/2023 18
3.1 SENSING MECHANISMS FOR MICROMACHINED MECHANICAL
SENSORS

Piezoresistive: Change of electrical resistance due to mechanical

stress
Thermo-resistive: Change of electrical resistance due to temperature
change
Capacitive: Change of capacitance due to geometric change (gap,
distance, …)
Resonator: Shift of resonant frequency due to mechanical stress or
change of mass
Piezoelectric: Mechanical stress on a piezoelectric material produces
electrical polarization and vice versa
Optical: light interference, diffraction, and reflection change with
displacement
3/3/2023 19
3.1 MECHANICAL SENSORS

 To measure mechanical quantities, such as mass, force,

moment, pressure, velocity, position, flow, stress, strain,
and acceleration)

3/3/2023 20
 3.1 PIEZORESISTIVE EFFECT
 Consider a long resistor with dimensions as below

L L
R   (3.1)
A W T

 Effect of small change in resistor geometry:

dR dL dA d 
   (3.2)
R L A  dL
where   axial  
L
dR d
 (1  2 )  (3.3)
R 
and  lateral
dA dw dh where  
   2 (3.4)  axial 3/3/2023 21
A w h
 3.1 GAUGE FACTOR, GF
Gauge Factor, GF
 : Poisson’s ratio (0<<0.5)
 : resistivity
l : longitudinal strain 1 R 1 
GF   (1  2 )  (3.5)
 R l 
GF ~ 2 to 4 for metals
GF ~ 100 for single crystal Si
Piezoresistive coefficients,  in silicon:

GF ΔR
 , and    (3.6)
E is Young’s Modulus E R
 is stress 3/3/2023 22
3.1 REPRESENTATION OF PIEZORESISTIVE EFFECT IN SINGLE CRYSTAL SI

 Piezoresistive Effect in single crystal Si  11    0   11  12  12 0 0 0   11 

       0 0 0   
   
22 0  12 11 12   22 
 n '   33    0   12  12  11 0 0 0   33 
  nm m , n, m  1, ..., 6 (3.7)    

   0

 
  23 
(3.8)
0    
23 0  0 0 0 44 0 0
 13   0  0 0 0 0  44 0   13 
      
 12   0   0 0 0 0 0  44   12 
  
 In the principal crystallographic orientations,  

Such as <100>, <010>, <001>, there are only 3 independent coefficients.

 The piezoresistive coefficient tensor for silicon in Eq.(3.8)
Table 3.1 The piezo-resistive coefficients in Si trong [4] theo hướng hướng [100] của
 11  12  12 0 0 0 (100) Silicon (Si).
   
 12 11 12 0 0 0   11 12 44
 12  12  11 0 0 0
 mn    (3.9) ( cm) (10-11Pa-1) (10-11Pa-1) (10-11Pa-1)
 0 0 0  44 0 0  p-type silicon 7.8 + 6.6 -1.1 +138
0 0 0 0  44 0 
  n-type silicon 11.7 -102.2 +53.4 -13.6
 0 0 0 0 0  44  3/3/2023 23
[4] Pant, S. S. K. B. D. Design principles and considerations for the ‘ ideal ’ silicon piezoresistive pressure sensor : a focused review. Microsyst. Technol. 20, 1213–1247 (2014).
3.1 TWO-TERMINAL PIEZORESISTOR
 Relative change in resistance with Piezoresistive sensing elements

Z=3
R ' 
  11 1   12'  2   13'  3   14'  4   15'  5   16'  6 (3.9)
R 


R 11
  0  
   11
  11
   12
  22
   16
  12
 (3.10)


R 0 I, E Y=2


I, E are the current density and electrical field

X=1

Figure 3.1 The mechanical stress components in materials.

3/3/2023 24
3.1 PIEZORESISTIVE COEFFICIENTS OF P-TYPE SILICON IN (100)
PLANE

R '
  11 1   12'  2   13'  3   14'  4   15'  5   16'  6 (3.11)
R
<100> (2')
<1
10

>
10
>

<1
'

<010>
(1')
'

'
' 
' 
' 
3/3/2023 25
Figure 3.2 The piezo-resistive coefficients in different crystal orientations components in materials.
PIEZORESISTIVE EFFECT ALONG <110> AND <110>
DIRECTIONS IN (100) PLANE

R
  L L   T  T
R (3.12)

 L  0.5 44 and  T  0.5 44

 L and T are longitudinal and transverse stresses, respectively.
 L and T are longitudinal and transverse piezoresistive coefficients, respectively.

3/3/2023 26
3.2 THERMAL SENSORS:
THERMO-RESISTIVE EFFECT SILICON MATERIAL
 The conductivity of the intrinsic or un-doped Si
 E ( 0 )  4.73104 
 g T 636 
 
 2 kT (3.13)
 (T )  qni (T )[  n (T )   p (T )]  Te  

 Nonlinear with negative TCR (temperature coefficient of resistance)

 The conductivity of doped Si

1
n   qn n (3.14)

q: charge of an electron 1.6 x10-19 C.
1 n, p (atoms/cm3): doping concentration of n-type and p-type Si.
p   qp p (3.15) µn, µp: electron’s and hole’s mobility.
 3/3/2023 27
3.2 CONCENTRATION VS. TEMPERATURE

3/3/2023 28
Figure 3.3 Illustration of electron concentration versus temperature. Adapted from Muller and Kamins (1986).
3.2 MOBILITY OF DOPED SI VS. TEMPERATURE
 The temperature dependence of conductivity of the doped Si is mainly on the
mobility.

(3.14)

(3.15)

3/3/2023 29
3.2 MOBILITY VS. TEMPERATURE

1016

1017

1018

3/3/2023 30
Figure 3.4 Illustration of Mobility versus temperature.
3.2 THERMAL SENSOR: THERMO-RESISTIVE EFFECT
OTHER MATERIALS
 Thermo-resistive transducer: Electrical resistance (or resistivity) of a material change with temperature. For moderate
temperature range:
R  R0 [1   (T  T0 )] (3.16)

 (ppm/oC) is the temperature coefficient of resistance (TCR), (for Si,  is about 1000 to 6500ppm/oC, depending on doping
concentration). T0, T : initial and current temperatures, respectively.

Material Resistivity (・cm) TCR (ppm/oC)

Carbon (graphite) 1390 -500
Chromium 12.9 3000 Table 3.2 The Resistivity and temperature
Aluminum 2.83 3600 coefficient of resistance (TCR) of materials.

Silver 1.63 3800

Platinum 10.6 3972
Tungsten 4.2 4500
Nickel 6.84 6900
Gold 2.4 4000-8300 3/3/2023 31
Prof. Dzung DAO, School of Engineering, Griffith University, Queensland Australia
 3.2 THERMAL SENSORS: P-N JUNCTION DIODE
 Based on the temperature dependence of the I-V characteristics of p-n junction arises from the change of the
intrinsic carrier density, band gap, the diffusion coefficient, diffusion length.
 For the forward-bias diode, diode current is given by:

qVD
( )
ID  ISe nkT (3.17)

Is : reverse saturation current or scale current, proportional to diode area and doping profile
q = charge on the electron = 1.6 x10-19 C
n =1 for integrated diode, = 2 for discrete diode
k Boltzmann’s constant

3/3/2023 32
3.2 THERMAL SENSORS:
THERMO-MECHANICAL SENSORS
 Thermal bimorph or bimetallic thermostat, made of two materials with different thermal expansion
coefficients 
1> 2

Electrical switch

Figure 3.5 Illustration of thermal bimorph.

 Resonant based thermal sensor: resonant frequency of resonator change with temperature:

f
 1  a1T  a2 T 2  ... (3.18)
f0
α1, α2, … are calibration coefficients (ppm/oC).
3/3/2023 33
Outline of Lecture

1. MEMS Sensors and Devices

2. Basic Electrical Components

3. Basic Sensing Mechanisms

4. Case studies: MEMS Sensors

(1) MEMS Strain Gauge

3/3/2023 34
4.1 CASE STUDIES OF MICROMACHINED MECHANICAL
SENSORS

Strain Gauge: to measure stress/strain of moving objects

3/3/2023 35
 4.1 CASE STUDY: (1) METAL STRAIN GAUGE
Characteristics
 Foil Type Metal Strain Gauge
 Low cost
 Easy to operate

Disadvantages
Figure 4.1 Metal Strain Gauge
 Low sensitivity (GF ≈ 2)
Working equation
 High power consumption
L R 
 Temperature dependence
R (1)    (1  2 )  (4.1)
A R 
1 R 1 
The gauge factor: GF   (1  2 )  (4.2)
 R  
36 3/3/2023
Small for metal gauge
 4.1 WORKING PRINCIPLE - SEMICONDUCTOR GAUGE

Characteristics
 Semiconductor type Strain Gauge
 Higher accuracy and sensitivity
 Low cost
 High volume production
Figure 4.2 Semiconductor Strain Gauge

Working equation
L R 
R
A
 R
  (1  2 ) 

1 R 1 
The gauge factor: GF   (1  2 )  (4.4)
 R  
Larger for semiconductor gauge 37 3/3/2023
Dr. Chi Cuong Nguyen, The Research Laboratories of Sai Gon High-Tech Park (SHTP Labs)
4.1 GAUGE FACTOR- SEMICONDUCTOR GAUGE

L
T

T
L

Piezo-resistive coefficients
For a p-type <110>-Piezoresistor
 L  71.8  1011 / Pa
 T  66.3  1011 / Pa
 GF  E L  120
For a n-type <100>-Piezoresistor
 L  102.2  1011 / Pa
 GF  E L  260
 T  53.4  1011 / Pa
38
 4.1 PROPOSED STRUCTURE– PIEZORESISTIVE STRAIN GAUGE
SENSOR

MEMS Piezoresistive strain gauge sensor:

• Semiconductor Type Strain Gauge.
• Piezoresistive sensing effect.
• Etched by DRIE or wet bulk micromachining.
• Wheatstone bridge circuit.

Figure 4.1 Proposed structure of piezoresistive strain sensor

39 3/3/2023
Figure 4.2 Wheatstone bridge circuit Dr. Chi Cuong Nguyen, The Research Laboratories of Sai Gon High-Tech Park (SHTP Labs)
 4.1 STRUCTURAL ANALYSIS BY FEM
Longitudinal Stress
Bar length = 500 μm
Bar width = 60 μm

Substrate thickness = 300 μm

Device thickness = 20 μm
3/3/2023 40
Figure 4.2 Simulation model of 3D structure of piezoresistive strain sensor Transverse Stress
4.1 SENSOR DESIGN

Figure 4.4 Sensor Design of piezoresistive strain sensor

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4.1 MASK DESIGN

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Figure 4.4 Mask Design of piezoresistive strain sensor
4.1 FABRICATION PROCESS
Si: device layer - 20 µm
SiO2: 1 µm
(SiO2 etch) SOI wafer Si: p-type - 250 µm

(Etch Si layer) (Thermal Diffusion)

Si: n-type

DRIE

(Pattern photoresist)
(Pattern photoresist)
1st mask for metal pattern

3rd mask for backside pattern

(Pattern photoresist)
2ndmask for metal pattern (Liff-off) Au/Cr layer: deposition
Etching Si device layer and pattern

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Figure 4.5 Fabrication process of MEMS piezoresistive strain sensor
4.1 MEMS STRAIN GAUGE

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Figure 4.6 Packaging of Sensor chip of MEMS piezoresistive strain sensor
4.1 CALIBRATIONS
0.003
6 kg
0.002 5 kg
4 kg
3 kg
0.001
2 kg
1 kg
0 groove
MEMS Strain Gauge (SG-01),Tbar = 6 mm, Lbar = 550 mm,

Resistance change, R/R

Wbar = 50 mm, a = 120 mm, Iinput = 1 mA, T = 25 oC.
-0.001 1 kg

-0.002 2 kg

-0.003 3 kg

4 kg
-0.004

5 kg
-0.005
R01- (R=1352.34 , GF=14.76+/-0.43)
6 kg
R03- (R=1357.54 , GF=13.47+/-0.09)
-0.006
R02- (R=1339.02 , GF=30.59+/-0.09)
R04- (R=1396.99 , GF=35.43+/-0.14)
-0.007

0 20 40 60 80 100 120 140 160 180 200

Strain,  () 3/3/2023 45
Figure 4.7 Calibration systems Figure 4.8 Calibration results
4.1 STRAIN GAUGE APPLICATIONS
Civil Infrastructure Medical Industrial
Wearable sensor
muscle contractions

Torque Measurements
Railroads Monitoring

Structural Health Monitoring MEMS strain sensor

applications load/weight measurement
Aerospace

Building Monitoring
46 3/3/2023
Bridge Cables Monitoring Wing deflection Monitoring
Outline of Lecture

1. MEMS Sensors and Devices

2. Basic Electrical Components

3. Basic Sensing Mechanisms

4.Case studies: MEMS Sensors

CASE STUDY (2): MEMS Pressure sensor

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4.2 CASE STUDIES OF MICROMACHINED MECHANICAL
SENSORS

Pressure Sensor: to measure pressure of moving objects

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4.2 CASE STUDY (2): MEMS PRESSURE SENSOR

To measure acceleration of moving objects

Acceleration a

Damping Mass
Spring k
m Inertial force: F = ma
Displacement △d  F/k=a(m/k)

Measure acceleration by measuring the displacement of a seismic mass.

Displacement can be measured by Piezoresistive, capacitive, piezoelectric, thermal,
optical, etc

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4.2 PROPOSED STRUCTURE– PIEZORESISTIVE PRESSURE
SENSOR

Conventional sensors:
 Uses flat silicon diaphragm.
 Etched by DRIE or wet bulk micromachining.
 Wheatstone bridge circuit.

Figure 4.1 Structure of piezoresistive pressure sensor

Figure 4.2 Wheatstone bridge circuit
50
4.2 WORKING PRINCIPLE– PIEZORESISTIVE PRESSURE SENSOR

Figure 4.3 Working principle of piezoresistive pressure sensor Figure 4.4 Pressure sensor layout

51
4.2 SIMULATIONS OF MEMS PIEZORESISTIVE PRESSURE
SENSORS
1. Piezoresistance effect
2. Carrier mobility
3. Doping concentration

1. Geometry (2D and 3D)

2. Face load
3. Clamping boundary
4. Symmetry boundary
5. Mesh setting
Figure 4.4 Simulation model of piezoresistive pressure sensor 52
4.2 STRESS MECHANICAL MODEL

Figure 4.5 Stress mechanical model 53

 4.2 RESISTANCE MODEL

Figure 4.6 Doping concentration, N

(a) (b)
Figure 4.7 (a) Holes mobility and (b) Piezoresistance factor versus Doping concentration Figure 4.8 Resistance change of PZR
4.2 MEMS PRESSURE SENSORS DESIGNS: FLAT-
DIAPHRAGM STRUCTURE

Figure 4.9 Sensor specification

(4.1)

Figure 4.10 The output voltage 55

4.2 MEMS PRESSURE SENSOR SIMULATION: 2D
RESISTANCE MODEL

Clamped boundary Face load Piezoresistive element Mesh

56
4.2 MEMS PRESSURE SENSOR SIMULATION: 3D
STRESS MODEL

Clamped boundary

Symmetric boundary Face load Mesh

57
4.2 SENSOR DESIGN

Figure 4.11 Sensor geometry and Mask Design of top-view of fabricated MEMS pressure sensor
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4.2 MASK DESIGN

59
Figure 4.12 different structures of piezoresistive pressure sensor
4.2 FABRICATION PROCESS

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4.2 FABRICATION PROCESS

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4.2 FABRICATION PROCESS
SOI wafer Step 4: Backside protect
Si: n-type, 15 μm
SiO2: 0.4 μm
Si: p-type, 325 μm

Photoresist
Step 1: Wafer cleaning
Step 5: SiO2 etching
Step 2: Thermal oxidation
SiO2: 1.5 μm

SiO2: 1.5 μm

Step 6: Photoresist removing + wafer cleaning

Step 3: Photolithography (M1)
Photoresist

62
4.2 FABRICATION PROCESS
Step 7: Poly boron film coating Step 10: Drive in

PBF

Step 11: Photolithography (M2)

Step 8: Predeposition
Photoresist

Step 9: PBF removing Step 12: Backside protect

63
4.2 FABRICATION PROCESS
Step 13: Contact hole opening Step 16: Photolithography (M3)

Step 17: Al etching

Step 14: Photoresist removing

Step 18: Photoresist removing + Al sintering

Step 15: Al deposition
Al

64
4.2 FABRICATION PROCESS
Step 19: Photolithography (M4) Step 22: Photoresist removing

Step 20: Front side protect Step 23: KOH etching

Step 21: SiO2 etching Step 24: Dicing

65
4.2 PACKAGING
Step 25: Glass bonding Step 27: Wire bonding

Step 26: Dice bonding Step 28: Cap sealing

66
 4.2 CALIBRATIONS
a new higher tube
Conventional tube for water level
for water level

Valve for
controlling
water level
Our pressure sensor
(putting inside the tube)
Water pumping
machine

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Figure 4.13 The calibration system of the piezoresistive pressure sensor fabricated at SHTP Labs in 2018. 67
4.2 CALIBRATIONS

Figure 4.14 The designed structure, wire bonding, packaged devices and output characterization of the piezoresistive pressure
sensor fabricated at SHTP Labs in 2018. 68
4.2 PRESSURE SENSOR APPLICATION

69
Figure 4.15 Flood warning system using pressure sensor chip fabricated by SHTPLabs installed at HCM city.
4.2 SEMICONDUCTOR & IOT LABS: ENVIRONMENT MONITORING

anywhere, anytime

70
Figure 4.16 Software for collecting, analyzing, and managing data from environmental automatic monitoring station developed by SHTPLabs.
4.2 MEMS PRESSURE SENSORS APPLICATIONS

71
END OF LECTURE

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