BHASKAR MITRA

ELL100: Introduction to Electrical Engineering

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Bipolar Junction Transistor

• Three terminal device

• Transistor: Transfer of resistance
• Two pn junctions in close proximity
• Achieved by sandwiching a narrow n(p) type material
between two p(n)-type material sections.
• Bipolar: Both electrons and holes contribute in current flow
• Type: npn or pnp
Bipolar Junction Transistor

• Three terminal device

• Transistor: Transfer of resistance.
• Two pn junctions in close proximity.
• Achieved by sandwiching a narrow n(p) type material
between two p(n)-type material sections.
• Bipolar: Both electrons and holes contribute in current flow
• Doping order
• Type: npn or pnp Nemitter > Ncollector > Nbase
• Thickness order
Tcollector >Temitter >Tbase
Bipolar Junction Transistor: Symbol

npn transistor symbol pnp transistor symbol

Emitter lead is identified by an arrow pointing in the direction of

‘positive’ charge flow in normal operation.
BJT- Basic Working
BJT- Basic Working
1. Forward bias of EB Jn causes electrons to
diffuse from emitter into base.

2. As base region is very thin, the majority of

electrons diffuse to the edge of the depletion
region of CB Jn, and then are swept to the
collector by the electric field of the reverse-
biased CB Jn. (Collected electrons recombine
with ‘holes’ provided by VCB supply.) 𝑖! = α𝐼"
BJT- Basic Working
1. Forward bias of EB Jn causes electrons to
diffuse from emitter into base.

2. As base region is very thin, the majority of

electrons diffuse to the edge of the depletion
region of CB Jn, and then are swept to the
collector by the electric field of the reverse-
biased CB Jn. (Collected electrons recombine
with ‘holes’ provided by VCB supply.) 𝑖! = α𝐼"

3. Small fraction of the electrons recombine

with holes in base region.
BJT- Basic Working
1 . Forward bias of EB Jn causes electrons to
diffuse from emitter into base.

2. As base region is very thin, the majority of

electrons diffuse to the edge of the depletion
region of CB Jn, and then are swept to the
collector by the electric field of the reverse-
biased CB Jn. (Collected electrons recombine
with ‘holes’ provided by VCB supply.) 𝑖! = α𝐼"

3. Small fraction of the electrons recombine

with holes in base region.

4. Holes are also injected from base to emitter

region. (4) << (1).

The two-carrier flow from [(1) and (4)] forms

the emitter current (IE)
BJT- Basic Working
1 . Forward bias of EB Jn causes electrons to
diffuse from emitter into base.

2. As base region is very thin, the majority of

electrons diffuse to the edge of the depletion
region of CB Jn, and then are swept to the
collector by the electric field of the reverse-
biased CB Jn. (Collected electrons recombine
with ‘holes’ provided by VCB supply.) 𝑖! = α𝐼"

3. Small fraction of the electrons recombine

with holes in base region.

4. Holes are also injected from base to emitter

region. (4) << (1).

The two-carrier flow from [(1) and (4)] forms

the emitter current (IE)

Ic is almost independent of the magnitude of VCB and (Ic = αIe,

α=0.9~0.99)
BJT- Carrier Motion
Bipolar Junction Transistor: Modes
Bipolar Junction Transistor: Modes

Amplifier
Amplifier (less effective)
Bipolar Junction Transistor: Modes

Amplifier
Amplifier (less effective)
Small drop between E-B and Ic
independent of Ib (Switch ON)
Bipolar Junction Transistor: Modes

Amplifier
Amplifier (less effective)
Switch ON
Only ICBO flows in collector
(SWITCH OFF)
BJT currents:
IE, IB, IC are the currents flowing through
emitter, base and collector terminal.
IE = IB + IC
BJT currents:
IE, IB, IC are the currents flowing through
emitter, base and collector terminal.
IE = IB + IC

IC is around 96% – 99.5% of IE.

IC = α IE

α is emitter to collector gain. It lies between 0.96 to 0.995.

BJT currents:
IE, IB, IC are the currents flowing through
emitter, base and collector terminal.
IE = IB + IC

IC is around 96% – 99.5% of IE.

IC = α IE

α is emitter to collector gain. It lies between 0.96 to 0.995.

IC is approximately equal to IE , but due to reverse biased C-B jn, a small reverse
saturation current flows (ICBO) . collector-to-base leakage
current with emitter open
circuit
BJT currents:
BJT currents:
BJT currents:
BJT currents:

β, base-to-collector current gain (assuming no leakage)

BJT currents:

β, base-to-collector current gain (assuming no leakage)

ICEO, reverse saturation current in CE configuration

BJT configurations
BJT configurations: CB

• Base is grounded/fixed.
• Base connected to both input and output
side
• Input – Emitter terminal, Output – Collector
terminal
BJT configurations: CB

• Base is grounded/fixed.
• Base connected to both input and output
side
• Input – Emitter terminal, Output – Collector
terminal
• 𝐼! = 𝐼" + 𝐼# , 𝐼" <𝐼!
• CAN be used for voltage amplification.
𝐼" 𝑅$
𝐴= ≫ 1, 𝑅$ ≫ 𝑅%&
𝐼! 𝑅%&
• Does not do current amplification (in fact
attenuates)
• Low Zin, High Zout, Low power gain
BJT configurations: CE

• Emitter is grounded/fixed. Collector

connected to load.
• 𝑉' > 𝑉( , (for npn)
(Hint : 𝑉'( − 𝑉)( > 0, 𝑉)( > 0 )
• Input – Base terminal, Output – Collector
terminal
BJT configurations: CE

• Emitter is grounded/fixed. Collector

connected to load
• 𝑉' > 𝑉( , (for npn)
(Hint : 𝑉'( − 𝑉)( > 0, 𝑉)( > 0 )
• Input – Base terminal, Output – Collector
terminal
• 𝐼! = 𝐼" + 𝐼# , 𝐼" ≫ 𝐼#
• Can be used for current amplification
𝐼"
𝐴 = ≫ 1,
𝐼#
• Can also be used as voltage amplifier but
amplification less than CB mode, and gives
180 degree phase shift (inversion)
• Medium Zin, Zout; High Power Gain
BJT configurations: CC

• Collector is grounded at fixed reference.

Emitter connected to load.
• Input – Base terminal, Output – Emitter
terminal
BJT configurations: CC

• Collector is grounded at fixed reference.

Emitter connected to load.
• Input – Base terminal, Output – Emitter
terminal
• 𝐼! = 𝐼$ = 𝐼" + 𝐼# ,
• Can be used for current amplification
𝐼!
𝐴 = ≫ 1,
𝐼#
• But, voltage gain is almost unity only.
• Voltage follower or buffer (zero phase
difference)
• High Zin, Low Zout, Medium Power Gain
BJT configurations: Qualitative Summary
Common Common Common
Characteristic
Base Emitter Collector

Input Impedance Low Medium High

Output
Very High High Low
Impedance

Phase Shift 0o 180o 0o

Voltage Gain High Medium Low

Current Gain Low Medium High

Power Gain Medium Very High Medium

Most
Preamplifier Buffer
Common
 MOS Capacitor

• The properties of the MOS structure are best studied when we look the MOS capacitor
• When the gate is negative w.r.t the substrate, there is negative charge on the metal plate
and positive charge in the semiconductor (Q=CV). For an p-type semiconductor, the
positive charge can only come from an accumulation of holes (the band bends upwards)
• Similarly for an n-type semiconductor with positive charge on the metal, there is negative
charge in the semiconductor which comes from bending of the band down.
 MOS Capacitor

• For p-type, when a + voltage is applied to gate, there is a + charge on the electrode and a -ve charge in the Is
• For small values of Vg, this -ve charge comes primarily from fixed charges in the depletion region
• As the voltage increases, the width of the depletion region has to increase to support the charge. Greater
width means greater band bending (slope is fixed = 𝑞𝑁 /𝜖 )
! "

• As the bands are bending, the concentration of mobile electrons is increasing. There comes a point when the
surface becomes n-type (or as n-type as the bulk is p-type). This is called inversion.
• Beyond this point the depletion region does not increase with increase in Vg. (𝑒 dependence on n)
#!
 Band Bending in Inversion

• Weak inversion: Surface becomes n-type

– 𝜓- = 𝜙./ ; 𝑥0 = 2𝜖- 𝜓- /𝑞𝑁0

• Strong Inversion: Surface is as n-type as the bulk is p-
type. 𝜓- = 2𝜙./
 MOSFET Structure

• MOSFET’s are of 4 types

enhancement NFET, depletion
NFET, enhancement PFET,
depletion PFET
• Depletion MOSFET is
normally ON. For NMOS, you
need to have negative Vgs to
turn off
• e-PMOS turns ON at -ve Vgs.
 Enhancement NMOS I-V

• When Vgs>Vt and Vds is small, the

channel is like a resistor, so the device
shows a linear response
• The conductance is proportional to
the number of carriers, hence slope is
propotional to Vgs
• For higher Vds the channel is no longer
uniform, the number of charge carriers
decreases near the drain - no longer
linear
• As the channel is pinched off, the
current saturates.
nMOS I-V

• In the linear region, the resistance of the MOSFET can be

written as 𝜇1 𝑊/𝐿𝑄213 = 𝜇1 𝑊/𝐿𝐶45 (𝑉6- − 𝑉7 )
• Depletion mode MOSFET is same except for negative Vt
• For PMOS devices, the Vds and Id is negative
Small Signal Models
Appendix: Debye Screening

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