Silan

Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet

40A, 600V FIELD STOP IGBT

DESCRIPTION C
2
SGT40N60FD2PN(P7)(PT) using Field Stop III IGBT technology, offers
the optimum performance for induction Heating, UPS, SMPS and PFC 1 12
G 3
application. TO-247-3L

FEATURES 3
E
 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A
 Low conduction loss
12 TO-3PN
 Fast switching 3

 High input impedance

12
3 TO-3P

NOMENCLATURE

SGT 40 N 60 S D M 1 P7
IGBT series Package
P7 : TO-247-3L
Current, 40: 40A

1,2,3… : Version No.

N : N Channel
NE : N-channel planar Blank: Standard diode
gate with ESD M : Standard Diode, full range
T : Field Stop 3/4 R : Rapid Diode
U : Field Stop 4+ B : Rapid Diode, full range
V : Field Stop 5 S : Soft Diode, full range
W: Field Stop 6
X : Field Stop 7 D : Packaged with fast recovery diode
R : RC IGBT
Voltage, 65: 650V
120: 1200V
L : Ultra low switching，recommended frequency ~2KHz
Q : Low switching，recommended frequency2~20K
S : Standard frequency ，recommended frequency5~40K
F : Fast switching，recommended frequency10~60K
UF : Ultra fast switching，recommended frequency 40K~

ORDERING INFORMATION
Hazardous Substance
Part No. Package Marking Packing Type
Control
SGT40N60FD2PN TO-3P 40N60FD2 Pb free Tube
SGT40N60FD2P7 TO-247-3L 40N60FD2 Pb free Tube
SGT40N60FD2PT TO-3PN 40N60FD2 Pb free Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2

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 Silan
Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet

ABSOLUTE MAXIMUM RATINGS (TC=25°C UNLESS OTHERWISE NOTED)

Parameter Symbol Ratings Units

Collector to Emitter Voltage VCE 600 V
Gate to Emitter Voltage VGE ±20 V
TC=25°C 80
Collector Current IC A
TC=100°C 40
Pulsed Collector Current ICM 120 A
Power Dissipation(TC=25C) 380 W
PD
-Derate above 25C 3.04 W/C
Operating Junction Temperature Range TJ -55～+150 C
Storage Temperature Range Tstg -55～+150 C

THERMAL CHARACTERISTICS
Parameter Symbol Ratings Units
Thermal Resistance, Junction to Case (IGBT) RθJC 0.33 C/W
Thermal Resistance, Junction to Case (FRD) RθJC 1.9 C/W
Thermal Resistance, Junction to Ambient RθJA 40 C/W

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2

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 Silan
Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet

ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C UNLESS OTHERWISE NOTED)

Parameter Symbol Test conditions Min. Typ. Max. Units
Collector to Emitter
BVCE VGE=0V, IC=100µA 600 -- -- V
Breakdown Voltage
C-E Leakage Current ICES VCE=600V, VGE=0V -- -- 200 µA
G-E Leakage Current IGES VGE=20V, VCE=0V -- -- ±500 nA
G-E Threshold Voltage VGE(th) IC=250µA, VCE=VGE 4.0 5.0 6.5 V
Collector to Emitter IC=40A, VGE=15V -- 1.8 2.7 V
VCE(sat)
Saturation Voltage IC=40A, VGE=15V, TC=125C -- 2.5 -- V
Input Capacitance Cies VCE=30V -- 1850 --
Output Capacitance Coes VGE=0V -- 190 -- pF
Reverse Transfer Capacitance Cres f=1MHz -- 50 --
Turn-On Delay Time Td(on) -- 16 --
Rise Time Tr VCE=400V -- 88 --
ns
Turn-Off Delay Time Td(off) IC=40A -- 110 --
Fall Time Tf Rg=10Ω -- 96 --
Turn-On Switching Loss Eon VGE=15V -- 1.8 --
Turn-Off Switching Loss Eoff Inductive Load -- 0.8 -- mJ
Total Switching Loss Est -- 2.6 --
Total Gate Charge Qg -- 100 --
VCE = 300V, IC=40A,
Gate to Emitter Charge Qge -- 11 -- nC
VGE = 15V
Gate to Collector Charge Qgc -- 52 --

ELECTRICAL CHARACTERISTICS OF FRD (TC=25°C UNLESS OTHERWISE NOTED)

Parameter Symbol Test conditions Min. Typ. Max. Units
IF = 20A, TC=25C -- 1.9 2.6
Diode Forward Voltage VFM V
IF = 20A, TC=125C -- 1.5 --
Diode Reverse Recovery Time Trr IES=20A, dIES/dt=200A/μs -- 32 -- ns
Diode Reverse Recovery Charge Qrr IES=20A, dIES/dt=200A/μs -- 74 -- nC

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 Silan
Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet

TYPICAL CHARACTERISTIC CURVES

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
TC=25°C TC=125°C 15V
20V 20V 12V
100 100
Collector Current – IC(A)

Collector Current – IC(A)

15V
12V
80 80
10V 10V

60 60

40 40
VGE=8V
VGE=8V
20 20

0 0
0 1.5 3.0 4.5 6.0 0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage – VCE(V) Collector-Emitter Voltage – VCE(V)

Figure 3. Typical Saturation Voltage Characteristics Figure 4. Transmission Characteristics

120 120
Emitter in common Emitter in common
VGE=15V VGE=20V
100 100
Collector Current – IC(A)

Collector Current – IC(A)

TC=25°C

80 80

60 TC=125°C 60
TC=25°C
40 40
TC=125°C

20 20

0 0
0 1 2 3 4 5 4 5 6 7 8 9 10 11 12
Collector-Emitter Voltage – VCE(V) Gate-Emitter Voltage– VGE(V)

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Emitter in common Emitter in common
Collector-emitter voltage – VCE(V)
Collector-emitter voltage – VCE(V)

TC=25°C TC=125°C

16 16

12 80A 12 80A

8 8
40A 40A
IC=20A IC=20A

4 4

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage – VGE(V) Gate-Emitter Voltage – VGE(V)

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 Silan
Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet
TYPICAL CHARACTERISTIC CURVES(CONTINUED)

Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics

4000 15
Emitter in common Emitter in common
Cies VGE=0V, f=1MHz TC=25°C

Gate-Emitter Voltage - VGE(V)

TC=25°C
12 VCC=100V
3000

200V
9
C(pF)

2000 Coes
300V
6
Cres

1000
3

0 0
0.1 1.0 10.0 30.0 0 30 60 90 120
Collector-Emitter Voltage – VCE(V) Gate Charge – QG(nC)

Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance
200 5500
Emitter in common
Emitter in common VCC=400V, VGE=15V, IC=40A
VCC=400V, VGE=15V, IC=40A TC=25°C
100 TC=25°C
Switching Time (nS)
Switching Time (nS)

1000
tr

td(off)

tf

100

td(on)

10 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance - RG(Ω) Gate Resistance - RG(Ω)

Figure 11. Switching Loss vs. Gate Resistance Figure 12. Forward Characteristics
10.0 80.0

Emitter in common
VCC=400V, VGE=15V, IC=40A
TC=25°C
Forward Current - IF(A)
Switching Loss -(mJ)

TC=125°C

10.0
Eon
TC=25°C

1.0 Eoff
1.0

0.3 0.2
0 10 20 30 40 50 0 1 2 3 4
Gate Resistance - RG(Ω) Forward Voltage - VF(V)

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 Silan
Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet
TYPICAL CHARACTERISTIC CURVES(CONTINUED)

Figure 13. Max. Safe Operating Area Figure 14. Square Wave Impedance Simulation (IGBT)
102 101

Normalized Peak Power Impedance

100
Collector Current - IC(A)

100µs
70%
50%
1
10 1ms 30%

10ms
10%
DC 10-1
5%

2%
100
1%
-2
10
0.5%

Note:
0.2%
1.Max. junction temperature:150°C
2.Max. Reference temperature: 25°C
10-1 10-3
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101 102
Collector-Emitter Voltage - VCE(V) On-pulse Duration (Sec)

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 Silan
Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet
PACKAGE OUTLINE

TO-3P UNIT: mm

D A
MILLIMETER
SYMBOL
F2 c1 MIN NOM MAX
__
A 4.4 5.2
__
c1 1.2 1.8
__
A1 1.2 2.0
b 0.7 1.0 1.3
L2

φP
L1

b1 2.7 3.0 3.3

b2 1.7 2.0 2.3
D 15.0 15.5 16.0
L

c 0.4 0.6 0.8

A1 __
b1 F2 8.5 10.0
b2 b e 5.45 TYP
__
L1 22.6 23.6
L 39.0 __ 41.5
__
L2 19.5 21.0
__
e c P 3.0 3.4

TO-247-3L UNIT: mm

E A MILLIMETER
A2
Q

SYMBOL
MIN NOM MAX
φP
A 4.80 5.00 5.20
E2

A1 2.21 2.41 2.59

A2 1.85 2.00 2.15
D

b 1.11 _ 1.36
_
b2 1.91 2.25
_
b4 2.91 3.25
_
c 0.51 0.75
L1

D 20.80 21.00 21.30

E 15.50 15.80 16.10

E2 4.40 5.00 5.20
L

e 5.44 BSC

L 19.72 19.92 20.22

_ _
L1 4.30
C
b2 b A1 Q 5.60 5.80 6.00
b4
e P 3.40 — 3.80

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 Silan
Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet
PACKAGE OUTLINE(CONTINUED)

TO-3PN UNIT: mm

B
A
B1 MILLIMETER
A1 SYMBOL
MIN NOM MAX
A 4.60 4.80 5.00

ΦP
A1 1.30 1.50 1.70
D A2 2.20 2.40 2.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.90 3.10 3.30
G

B 15.20 15.60 16.00

A2
b1
b2
B1 9.10 9.30 9.50
c 0.50 0.60 0.70
D1

D 18.30 18.50 18.70

b D1 19.00 19.50 20.00
c
e 5.25 5.45 5.65
e
G 2.80 3.00 3.20
4.6～5.0

P 3.00 3.20 3.40

Important notice :
1. The instructions are subject to change without notice！
2. Customers should obtain the latest relevant information before placing orders and should verify that such information is
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precautions.
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conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products
for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal
injury or property loss.
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 Silan
Microelectronics SGT40N60FD2PN(P7)(PT)_Datasheet
Part No.: SGT40N60FD2PN(P7)(PT) Document Type: Datasheet
Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.2
Revision History:
1. Add the package outline of TO-3PN
2. Update the template of datasheet
Rev.: 1.1
Revision History:
1. Update NOMENCLATURE
2. Update Marking
3. Update package outline
Rev.: 1.0
Revision History:
1. First release

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