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2 SK 3569
2 SK 3569
2SK3569
Switching Regulator Applications
Unit: mm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2
Thermal Characteristics
Note 1: Ensure that the channel temperature does not exceed 150℃.
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Electrical Characteristics (Ta = 25°C)
Marking
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ID – VDS ID – VDS
10 20
COMMON SOURCE 6 5.3 8 COMMON SOURCE
10
Tc = 25°C Tc = 25°C
5.1 6
PULSE TEST PULSE TEST
(A)
(A)
8 16
10,8 5
5.5
DRAIN CURRENT ID
DRAIN CURRENT ID
4.8 5.25
6 12
5
4.6
4 8
4.75
4.4
4.2 4.5
2 4
VGS = 4 V
VGS = 4V
0 0
0 2 4 6 8 10 0 10 20 30 40 50
COMMON SOURCE
COMMON SOURCE
Tc = 25℃
VDS = 20 V
(A)
16 8 PULSE TEST
PULSE TEST
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT ID
12 6
ID = 10 A
8 4
Tc = −55°C
100 5
4 2
25 2.5
0 0
0 2 4 6 8 10 0 4 8 12 16 20
COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE
Tc = 25°C
PULSE TEST
Tc = −55°C
10
RDS (ON) (Ω)
25
⎪Yfs⎪ (S)
100
1
VGS = 10 V、15V
COMMON SOURCE
VDS = 20 V
PULSE TEST
0.1 0.1
0.1 1 10 100 0.1 1 10 100
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ID = 10A
10
RDS (ON) ( Ω)
1.5
5A
1.0 2.5A
VGS = 10 V 1
10
0.5
5
3
1 VGS = 0, −1 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Ciss
GATE THRESHOLD VOLTAGE
4
(pF)
1000
C
Coss 3
CAPACITANCE
Vth (V)
100
2
Crss
COMMON SOURCE
10 COMMON SOURCE VDS = 10 V
VGS = 0 V 1
ID = 1 mA
f = 1 MHz
Tc = 25°C PULSE TEST
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160
(V)
DRAIN POWER DISSIPATION
VDS
VGS
400 16
60
DRAIN-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
300 12
PD (W)
200 8
Common source
20 200 ID = 10 A
VGS
100 Tc = 25°C 4
Pulse test
0 0 0
0 40 80 120 160 200 0 10 20 30 40 50 60
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rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
1 Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
SINGLE PULSE
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.001
10μ 100μ 1m 10m 100m 1 10
100 μs * 400
AVALANCHE ENERGY
ID max (CONTINUOUS)
(A)
10
EAS (mJ)
300
1 ms *
DRAIN CURRENT ID
DC OPERATION 200
Tc = 25°C
1
100
0
0.1 25 50 75 100 125 150
* SINGLE NONREPETITIVE PULSE
Tc=25℃ CHANNEL TEMPERATURE (INITIAL)
CURVES MUST BE DERATED Tch (°C)
LINEARLY WITH INCREASE IN
VDSS max
TEMPERATURE.
0.01 BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) −15 V IAR
VDD VDS
RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 6.36mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠
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