Chapter-1 SOLID STATE

VERY SHORT ANSWER

QUESTIONS 6. What is the coordination
number of atoms in
1. Define the term
amorphous. body-centered cubic structure?
a

A. An amorphous solid consists of particles of A. Coordination number

in body centered cubic
irregular geometrical shape. In such an lattice is "8" as each atom attached with 8
other
arrangement, a regular and periodically atoms.
repeating pattern is observed over short 7.
distances only i.e., only short range order.
Stability of a crystal is reflected in the
magnitude of its melting point. Comment.
2. What makes a glass different from A. Higher the melting point, greater is the
quartz?
A. i) Glass is an amorphous solid in which intermolecular force of attraction and greater
constituent particle (Si0, tetrahedra) have is the stability. Because the intermolecular
only short range order. forces are strong, more energy is required to
i) Quartz is a crystalline solid in which break the bonds and, therefore, the melting
constitutent particle (Si0, tetrahedra) have point is high.
long range order 8. How are the intermolecular forces among the
ii) Glass is isotropic. Quartz is anisotropic in molecules effect the melting point?
nature. A. As the intermolecular forces among the
molecules increases, stability of crystal
3. Classify the following solids as ionic, metallic,
molecular, covalent network or amorphous. increases. So, energy is required to break
more

i) Si ) L ii) P iv)Rb the bonds and therefore melting point increases.

) SiC vi) LiBr 9. How do you distinguish between hexagonal

Ammonium phosphate, (NH),PO, close-packing and cubic close packing
vi)
structures?
vii) Plastic ix) Graphite
decoxide A. In hexagonal close packing, the third layer
x) Tetra phosphorous duplicates the first layer. This leads to a pattern
xi) Brass of the type AB AB AB...

A. Ionic solids: Ammonium phosphate (NH,),PO4 In the cubic close packing, the fourth layer
LiBr as contains ions duplicates the first layer. This leads to a pattern'
solids Rb, Brass (metal) of the type ABC ABC ABC.
Metallic
Tetraphosphorous
Molecular solids , P4.covalent bonds 10. How do you distinguish between erystal
contains
decoxide (P,O,) lattice and unit cell?
solids SiC, Si, Graphite
Covalent network molecule A. A regular arrangement ot points (each
cOvalent net work gaint
solids: Plastic (short range order) representing an atom, ion or a molecule), in
Amorphous
the term
coordination
three dimensional space is called a erystal
4. What is meant by
lattice.
number?
an atom
or ion în
of A unit cell is the smallest portion of
A. The
co-ordination
number
nearest neighbours
a crystal
number of lattice which when repeated in
a solid, is the in a closed three
atom o r 1on
that dimensions generates, the
present
around
complete crystal
protected structure lattice.
coordination number of atoms in
5. What is the 11. How many lattice
cubic close-pack
structure?
points are there in one unit
a
cubic close pack cell of face-centered cubic
A. Co-ordination
number n lattice.
is *12" as each atom attached with A. A face centered cubic unit cell has
structure
12 other atoms. and 6 face centers 8 corners
i.e., 14 lattice points.
IPE STUDY MATERIAL TOrdlUIIanya Sr. Students
3
Solid State
CHEMISTRY
one unit 17. What is interstitial defect 2
lattice points are there in
12. How many
lattice? A. The defects in atoms or i1ons which Occus.
cell of face centered tetragonal
unit cell has 8 normally vacant interstitials sites
A. A face centered tetragonal in a
centers i.e., 14 lattice points. crystal are called interstitial defects.
corners and 6 face

are there in one unit 18. What are f-centers ?

13. How many lattice points
cell of body centered cubic lattice? A. F-centres are the anionic sites occupied bv
A. A body centered cubic unit cell has 8 corners
unpaired electrons. F-centres are produced
and 1 body center i.e., 9 lattice points.
when alkali halide is heated with excess
an

14. What is a semi conductor ? alkali metal. This defect imparts colour to
A. The solids which have conductivities in the crystals
intermediate range of 10 to 10 ohm m are
Eg: When NaCl crystals is heated in the
called semiconductors. For semiconductors,
presence of Na, it appears in yellow colour.
conductivity rises with temperature.
19. Explain Ferromagnetism with suitable
Eg: Silicon, Germanium.
example.
5 What is Schottky defect?
A. Schottky defect is a point defect which arises, A. The substances that are strongly attracted by a
when equal no. of cations and anions are magnetic field are called ferromagnetic
missing from the Lattice. lonic crystals substances. These substances show permanent
maintain electrical neutrality. Hence no. of magnetism even after the applied magnetic
vacancies at cation sites are equal to no. of field is removed i.e., once these materials are
vacancies at the anion sites.
magnetised, they retain their magnetism.
Eg: Fe. Co, Ni. CrO,
CATION VACANCY
0. Explain Paramagnetism with suitable
example.
A. These substances are weakly attracted by
ANION VACANCY
magnetic field. The magnetism is due to the
presence of atoms, ions (or) molecules with
Eg 3NaC1, CsCl, AgBr unpaired electrons. They get magnetised in a
What is Frenkel defect? magnetic field in the same direction, but l0se
A. Frenkel defect
is a magnetism when magnetic field is removed.
when an atom or point defect which arises
ion is
site and missing from its normal Bg: Fe, Cr",0,, NO, Na atoms, TIZrO, vo,
In ionic
occupies interstitial space in the lattice. etc.
crystals,
its site and usually cation escapes from
because of itsoccupies
small size
the space
among anions
Explain Ferrimagnetism with suitaDie
example.
A. In
ferrimagnetic substances, the net magn
oment is small due to unequal number o
Interstitial site gnetic in
moment of domains aligned
parallel and These
antiparallel directions
Eg: AgCl, Substances lo[e the feri-magnetism on heatin
ZnS, AgBr. and become para-magnetic.

Eg:
IPE STnY Fe 0 MgFe,0, ZnFe,0, NiFe,0,et
 CHEMISTRY Solid State
22. Explain Antiferromagnetism with suitable4 Define Octahedral void.
example. A. Octahedral void : The hole formed by three

A The substances which have domain structure
similarto those of ferromagnetic substances but
magnetic moment of heir domains are oriented
in equal number in opposite direction and
cancel out each other's magnetic moment.
Eg: Mn0, MnO, Mn,O.
23. Why X-rays are needed to probe the crystal
structure?
spheres of a hexagonal layers and another three
spheres of the adjacent layers. f 'n' atoms are
present in one unit cell of close packing then
no.of octahedral voids are 'n'
Layer A
Nio

A. To see the atoms we must use light of wave

lengthless than the size of atoms i.e., 10-10m

which is in the X-ray region of the electro- Octaheral
Layer B hole
Hence X-rays are needed
magnetic spectrum.
be
to probe the crystal structure.
5. Under what conditions could quartz
ADDITIONAL VERY SHORT ANSWER converted into glass?
sudden cooling with
QUESTIONS Molten on
A. quartz
disturbance to form glass. (amorphous)
1. Define Anisotropy.
the physical SHORT ANSWER QUESTIONs
A. Anisotropy: n crystalline solids,
electrical resistance, between
properties such as 1. Explain similarities and differences
differet values in
refractive index etc. show metallic and ionic crystals.
different direction in the
same crystal. It is due
A. i) Similarities
of particles in different have
to different arrangement
a) lonic and metallic crystals both
directions. electrostatic force of attraction.

2. Define Isotropy. metallic

b) The bond present in ionic and
the physical
A. Isotropy : In amorphous solids, directional.
resistance, crystals is non

properties such
as electrical
show similar values
in any
c)Both crystals have high melting point.
refractive index etc,
arrangenment of ii) Differences
direction. It is due to irregular

particles in all
directions.
a) The constituent particles in metallic crystals
void. are positive ions immersed in a sea of
3. Define Tetrahedral three
The hole formed by mobile electrons. In ionic crystals the
A. Tetrahedral void:
contact with each other
spheres of a layer in constituent particles are positive and
on the top (or) bottom
and also with a sphere negative ions.
one unit cell
atoms are present in
layers. If 'n' b) In ionic crystals, ions are not free to move.
structure then no.of tetrahedral
of close packed
voids are '2n' Layer A So, they don't conduct electricity in solid
state. They conductors only in molten
are

state or aqueous solution. In

metals, valence
electrons can freely move. Hence, can they
conduct electricity in solid state.
Tetraheral
Layer B
hole c) Metallic solids are malleable and
ductile
while ionic solids are brittle.
PE STUDY MATERIAL for drlGIalanya Sr. Students
5
 The length of
body diagonal is
CHEMISTRY
Solld State
solids
are
hard and
brittle.

where'a' is the edge length of unit to equal

why
ionic
there are strong cell and
2.
Explain
are
hard
because

among
the qual to 4r, where 'i is radius of
equa atom
als
lonic
crystals attraction

A. forces of
oppositely
which a r e
electrostatic

particles
constituent

charged ions. when stress

because
brittle
ions c o m e in
are
lonic solids
similarly
charged
the
and forces
of
in applied each other
with
interaction
between the
ions.
are developed
repulsions of
of packing in
case a
Caleulate the
efficiency
3. cubic crystal.
metal of simple
are located
a
cubic lattice the particles
In a simple
A.
corners of the
cube and touch each
only at the D
other along the side.
side of the cube 'a',
Body-centred cubic unit
Thus, the edge length
or
cell (sphere along the
r are related as
and the radius of each particle, body diagonal are shown
a2t. with solid boundaries).
Volume of cubic unit cell = aa = (2r)3 = 8r3
We know that the effective number of atoms
per unit cell of simple cubic erystal is 1. Volume of cubic unit cell =
a'=|
4
Volume of an atom = T r
The effective number of atoms per unit cell o
. Packing efficiency

body centered cubic lattice 8x+1=2

Volume of two atoms =

2x-Tr= -3
3

Packing efficiency
Volume of two
atoms 100%
Volume of unit cell

The Simple cubic unit 8

the
spheres are in cell. Ttr
edge of the contact with 3
cube each other X100=68%
64r3
Volume of one along
Volume of atom 33
cubic unitcel 1009% I

unitcell in
c R

X100 Calculate the efficiency of pa

Packing

Calculate the=100=52 49l%

r
4. Tace-centered cubic erystal e coner
aMIs
of A. In
face centered cubic latic
ha bodymetal of eiclency of packing in
a a
A.
body-centered
center is incentered oabic oubic case
face center is in
The
with cgual
contactgonal. o

d
al)

arranged around. with the the erystal.

contact lattice length of face diago unit
cell

atoms atom at the where'a' is the edge ea of f a t o

aom
of
diagonally equal to 4r, where is
radius
CHEMISTRY Solid State
B 7. If the radius of the octahedral void is 'r' and
H radius of the atoms in close packing is R,
derive relation between r and R.

A. Derivation of relation between 'r' and 'R'

A sphere fitted into the octahedral void is shown
D
in the figure. The spheres present in other layers
are not shown in the figure.
Cubic close packing other
sides are not provided with
spheres for sake of clarity.

Volume of cubic unit cell =a Atoms

of
number of atoms per unit cell
The effective
An.octahedral
void

face centered cubic lattice 8x

AABC is a right angled triangle.
theorem,
atoms = 4X,r=Tr We apply phythagoras
Volume of four AC=AB2+BC2

Packing efficiency
+1f =2(R+
Volume of four aromSx 100% (2R)= (R+1)* +(R
2R2 (R+ r)
4R2 2 (R+ r)2;
=
cell
Volume of unit
v2R=R+r

we get
Taking square root,
x100 = 74%
r=v2R-R =r=(V2-1)R
323

2 P and r= (1.414 -1) R

two elements
made of
solid is the cube
A cubic c o r n e r s of
6. at the (or)=0.414
0414 R
A t o m s of Q
are formula
the r=
What is
Q. semi
main types of
body-centre. c o o r d i n a t i o n

the
and P at What are
the
Describe the two
compound? 8. their conduction
contrast
of the and
of P
and Q. corners
of the
conductors

numbers
at the
8 mechanism.
present unit cell
Atoms Q are
of Q
atoms per There are two types of semi
A.
C o n t r i b u t i o n

A. Semi conductors:
cube. conductors. They are

atom semi-conductors : In case of semi

of the Intrinsic
=8=1l at the
body
center

between the valence band

present unit cell conductors, the gap
P are atoms per
Atoms
of P small. Therefore, some
C o n t r i b u t i o n

and conduction band is

cube.
conduction band and
electrons may jump to
=1x =latom 1: I so, the show some conductivity. Electrical conduc-
and Q
=

Therefore,
ratio ofP
tivity of semi conductors increases with rise in
formula is PQ. centre temperature, since more electrons can jump to
are present body
at
PP&Q
&
atom
cubic the conduction band. Substances like silicon
it forms body centered
Since
the
it
only. So
&
corners
and germanium show this type of behaviour
lattice.

number
of atoms P and Q 8. = and are called intrinsic semi conductors.
Coordination

IPESTUDY
MATERIAL for S Ghaltanya Sr. Students 7
Solid State CHEMISTRY
Positive hole (no electron)
Empty band (conduction band)

0:

filled band (Valence band)

:
p-type semiconductor
gap is very small
Semi conductors)
b p-type semi-conductors : It is obtained by
doping with impurity atoms containing less
)Extrinsic semi conductors: Theirconductivity electrons i.e., II A group elements (B, Al, Ga
is due to the presence of impurities. They are or In) When Ga is added to Ge some of the Ge
formed by 'doping." atoms in the crystal are replaced by Ga atoms
and the three electrons of 'Ga' atom will be
Doping Conductivity of semi conductors is
too low to be of practical use. Their condu-
used for bonding with Ge while the fourth
valence electron is missing and is called
ctivity is increased by adding an
appropriate electron hole (or) electron vacancy. This
amount of suitable impurity. This process is
vacancy on an atom in the structure migrates
calied 'doping.
from one atom to another. Hence it facilitates
Doping can be done with an impurity which
is electron rich the electrical conductivity.
for) electron deficient. Extrinsic
semi conductors 9 Classify each of the following as either a
are of two types. P-type or a n-type semiconductor
AAype semi-conductors It is obtained by
adding trace amount of
(March 2012)
VA group element (P,
As. Sb) to 1) Ge doped with In 2) Si doped with B.
pure Si (or) "Ge by doping. A. 1) It is a p-type semi conductor because ue
Mobile electron group 14 element) contains 4 valence
electrons whereas 'In' has only three
S:O9| valence electrons and they form
electron
deficient bond (or) electron vacancy {or)
hole.
2) Tt is a p-type semi conductor because Si

group 14
element) contains 4 valence
electrons whereas 'B' has only three valeniee
electrons and they form
n-type seniconductor electron deficien
bond (or) electron
Wbes P, As Sb (or) vacancy (or) hole.
sone of the
Si or Ge Bi is added to 10.
Analysis shows that nickel oxide th e
Si or
formula Ni 98 what fractions ofhasnickel
by P or As in the Ge
of P o atoms. Out of are crystal
As four five
valency replaced exist as Ni and Ni * ions?
boading wun Si (or) electuons will beelectrons A. The ratio of Ni
electron serves to
Ge
atoms while used for and 'O' atoms in
conuct the fiftb Oxide (NiO) = 1:1 pure nicN
electricity. For
every one '0' atom let
Ni
(II) x be the number o
IPE ST atoms in the qxide