Generation of FM signal

• Indirect method – Modulating wave is first used to produce NBFM

signal and frequency multiplication is used to increase the frequency
deviation to desired level
• Direct method – Carrier frequency is directly varied in accordance with
the input baseband signal
Armstrong method
 Armstrong method

• The message signal is integrated and used to phase modulate a

crystal controlled oscillator
• In order to minimize the distortion, phase deviation or modulation index
is kept small (β<0.3)
• The NBFM signal is multiplied in frequency using frequency multiplier
to produce to WBFM signal
 Armstrong method
• Let s1(t) denotes the output of the phase modulator
 Armstrong method
• Let s1(t) denotes the output of the phase modulator
t

s1 (t)  Ac cos[2f1t  2k f  m(t)dt]      (1)

0
 Armstrong method
• Let s1(t) denotes the output of the phase modulator
t

s1 (t)  Ac cos[2f1t  2k f  m(t)dt]      (1)

0

• f1 – Frequency of the crystal controlled oscillator

• kf – Frequency sensitivity (constant)
• For a sinusoidal modulating wave, the output s1(t) is given as
 Armstrong method
• Let s1(t) denotes the output of the phase modulator
t

s1 (t)  Ac cos[2f1t  2k f  m(t)dt]      (1)

0

• f1 – Frequency of the crystal controlled oscillator

• kf – Frequency sensitivity (constant)
• For a sinusoidal modulating wave, the output s1(t) is given as
s1 (t)  Ac cos[2f1t  1 sin 2fmt]      (2)
• The phase modulator output is multiplied ‘n’ times in frequency by
using frequency multiplier to produce the desired WBFM wave
 Armstrong method
• Let s1(t) denotes the output of the phase modulator
t

s1 (t)  Ac cos[2f1t  2k f  m(t)dt]      (1)

0

• f1 – Frequency of the crystal controlled oscillator

• kf – Frequency sensitivity (constant)
• For a sinusoidal modulating wave, the output s1(t) is given as
s1 (t)  Ac cos[2f1t  1 sin 2fmt]      (2)
• The phase modulator output is multiplied ‘n’ times in frequency by
using frequency multiplier to produce the desired WBFM wave
s(t)  Ac cos[2nf1t  n1 sin 2f mt]      (3)
 Armstrong method
• In case of sinusoidal modulating wave
 Armstrong method
• In case of sinusoidal modulating wave
s(t)  Ac cos[2f ct   sin 2f mt]      (4)
fc  nf1   n1

• Frequency multiplier n1 shifts the NBFM to WBFM

• Frequency translator will not change the frequency deviation, it only
shifts the FM signal to either upwards and downwards in the spectrum
• Frequency multiplier n2 is used to increase the Δf and fc
 Advantages and Diadvantages of Indirect Method

• As crystal oscillators are used for obtaining the carrier

frequency, it (the carrier frequency) is very stable.

• Since the narrowband FM is generated by a phase modulator,

a long chain of frequency multipliers will have to be used to
bring the frequency deviation to the required level.
 Varactor diode modulator
• Direct method for FM signal generation
• Carrier signal frequency is directly varied in accordance with the input
baseband signal using Voltage Controlled Oscillator (VCO)
• Capacitor or inductor of the oscillator tank circuit is varied according to
the amplitude of the message signal
 Varactor diode modulator
• Varactor or Varicap means variable capacitor diode
• Specially fabricated PN junction diode used as a variable capacitor in
reverse biased condition
• Varactor diode is used to produce a variable reactance and it is placed
across the tank circuit
 Circuit operation

• Capacitor c isolates the varactor diode from the oscillator

• The effective bias to varicap is given as
 Circuit operation

• Capacitor c isolates the varactor diode form the oscillator

• The effective bias to varicap is given as
Vd  V0 Vm cos mt      (1)
 Circuit operation

• Capacitor c isolates the varactor diode form the oscillator

• The effective bias to varicap is given as
Vd  V0 Vm cos mt      (1)
• Increase in the modulating signal amplitude results in the increase in
the carrier frequency
 Circuit operation
• The capacitance of the diode is given as
k
Cd       (2)
Vd
• k – Proportionality constant
• Vd – Total voltage across the diode in reverse bias condition
 Circuit operation
• The capacitance of the diode is given as
k
Cd       (2)
Vd

• k – Proportionality constant
• Vd – Total voltage across the diode in reverse bias
condition
• The total capacitance of the tank circuit is C0 + Cd
• The instantaneous frequency of oscillation is given as
 Circuit operation
• The capacitance of the diode is given as
k
Cd       (2)
Vd
• k – Proportionality constant
• Vd – Total voltage across the diode in reverse bias condition
• The total capacitance of the tank circuit is C0 + Cd
• The instantaneous frequency of oscillation is given as
1
fi 
2 L(C0  Cd )
 Circuit operation
• The capacitance of the diode is given as
k
Cd       (2)
Vd
• k – Proportionality constant
• Vd – Total voltage across the diode in reverse bias condition
• The total capacitance of the tank circuit is C0 + Cd
• The instantaneous frequency of oscillation is given as
1
fi 
2 L(C0  C d )
1
fi 
2 L(C0  kVd1/ 2 )
• The oscillator frequency depends on message signal
 Reactance tube modulator

Ib  I d

X c  R

• Direct method for FM signal generation

• FET reactance modulator behaves as reactance across terminal AB
• The terminal AB is connected across the tuned circuit of the oscillator
• The varying voltage of the message signal changes the reactance
across the terminals
• The change in reactance can be inductive or capacitive
 Expression for equivalent capacitance

• Gate voltage
V
Vg  I b R  R    (1)
R  jX c
 Expression for equivalent capacitance

• Gate voltage
V
Vg  I b R  R    (1)
R  jX c
• If Xc >> R
V
Vg  I b R  R    (2)
 jX c
 Expression for equivalent capacitance

• Gate voltage V
Vg  I b R  R    (2)
 jX c
• Drain current
I d  g mVg    (3)
• Sub Eq.(2) in (3)
 Expression for equivalent capacitance

• Gate voltage V
Vg  I b R  R    (2)
 jX c
• Drain current
I d  g mVg    (3)
• Sub Eq.(2) in (3)
RV
Id  gm    (4)
 jX c

• Assuming Ib<<Id and the impedance between the terminals AB is

 Expression for equivalent capacitance

• Gate voltage V
Vg  I b R  R    (2)
 jX c
• Drain current
I d  g mVg    (3)
• Sub Eq.(2) in (3)
RV
Id  gm    (4)
 jX c

• Assuming Ib<<Id and the impedance between the terminals AB is

V
Z     (5)
Id
• Sub Eq.(4) in (5),
jX c
Z     (6)
gmR
 Expression for equivalent capacitance

jX c
Z     (6)
gmR
• The impedance is clearly a capacitive reactance
Xc
Z  X eq 
gmR
 Expression for equivalent capacitance

jX c
Z     (6)
gm R
• The impedance is clearly a capacitive reactance
Xc
Z  X eq 
gm R
1
Z
2fCg m R
 Expression for equivalent capacitance

jX c
Z     (6)
gm R
• The impedance is clearly a capacitive reactance
X
Z  X eq  c
gm R

Z 1 1
Z
2fCg m R 2fCeq

Ceq  g m RC    (7)
 Observations on equivalent capacitance
• Ceq depends on the device transconductance gm
• Ceq can be set any original value by adjusting R and C values
• If Xc>>R is not satisfied, then Z is not purely reactive and it has some
resistive in it
• In practice Xc=nR at carrier frequency (5<n<10)
1
Xc   nR
2fC
 Observations on equivalent capacitance
• Ceq depends on the device transconductance gm
• Ceq can be set any original value by adjusting R and c values
• If Xc>>R is not satisfied, then Z is not purely reactive and it has some
resistive in it
• In practice Xc=nR at carrier frequency (5<n<10)
1
Xc   nR
2fC
1
C
2fnR
 Observations on equivalent capacitance
• Ceq depends on the device transconductance gm
• Ceq can be set any original value by adjusting R and c values
• If Xc>>R is not satisfied, then Z is not purely reactive and it has some
resistive in it
• In practice Xc=nR at carrier frequency (5<n<10)
1
Xc   nR
2fC
1
C
2fnR
gm
Ceq     (8)
2fn
Comparison of AM, FM, PM
Comparison of AM, FM, PM
Comparison of AM, FM, PM
Comparison of AM, FM, PM
Comparison of AM, FM, PM
Comparison of WBFM and NBFM
Comparison of WBFM and NBFM