1000V 30A

APT30D100BG
APT30D100SG
Pb Free Terminal Finish.

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS

• Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses
-Switchmode Power Supply
-Inverters • Soft Recovery Characteristics • Low Noise Switching
• Free Wheeling Diode
-Motor Controllers • Popular TO-247 Package or • Cooler Operation
-Converters Surface Mount D3PAK Package
-Inverters • Low Forward Voltage • Higher Reliability Systems 2
1
• Snubber Diode
• Low Leakage Current • Increased System Power
• PFC Density

1 - Cathode
2 - Anode
Back of Case - Cathode

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Characteristic / Test Conditions APT30D100(B/S)G UNIT

VR Maximum D.C. Reverse Voltage

VRRM Maximum Peak Repetitive Reverse Voltage 1000 Volts

VRWM Maximum Working Peak Reverse Voltage

IF(AV) Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5) 30
IF(RMS) RMS Forward Current (Square wave, 50% duty) 60 Amps
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 210
TJ,TSTG Operating and StorageTemperature Range -55 to 175
°C
TL Lead Temperature for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

IF = 30A 1.9 2.3

VF Forward Voltage IF = 60A 2.2 Volts

IF = 30A, TJ = 125°C 1.7

VR = VR Rated 250
IRM Maximum Reverse Leakage Current µA
VR = VR Rated, TJ = 125°C 500
1-2020

CT Junction Capacitance, VR = 200V 32 pF

053-0002 Rev E

Microsemi Website - http://www.microsemi.com

 DYNAMIC CHARACTERISTICS APT30D100(B/S)G

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

trr Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 29
ns
trr Reverse Recovery Time - 290
Qrr IF = 30A, diF/dt = -200A/µs
Reverse Recovery Charge - 670 nC
VR = 667V, TC = 25°C
IRRM Maximum Reverse Recovery Current - 5 - Amps
trr Reverse Recovery Time - 390 ns
Qrr IF = 30A, diF/dt = -200A/µs
Reverse Recovery Charge - 2350 nC
VR = 667V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 11 - Amps
trr Reverse Recovery Time - 160 ns
IF = 30A, diF/dt = -1000A/µs
Qrr Reverse Recovery Charge - 3500 nC
VR = 667V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 38 Amps

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

RθJC Junction-to-Case Thermal Resistance .61

°C/W
RθJA Junction-to-Ambient Thermal Resistance 40
0.22 oz
WT Package Weight
5.9 g

10 lb•in
Torque Maximum Mounting Torque
1.1 N•m
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.70
Z JC, THERMAL IMPEDANCE (°C/W)

0.60
0.9

0.50
0.7
0.40
0.5
0.30 Note:

0.3
PDM

t1
0.20
t2
0.1
0.10 t
Duty Factor D = 1/t2
0.05
θ

SINGLE PULSE Peak TJ = PDM x ZθJC + TC

0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp (°C)

0.0544 °C/W 0.000276 J/°C

1-2020

Power
0.129 °C/W 0.0168 J/°C
(watts)
053-0002 Rev E

0.426 °C/W 0.379 J/°C

Case temperature (°C)

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

 TYPICAL PERFORMANCE CURVES APT30D100(B/S)G
100 400
T = 125°C
J
90 60A V = 667V
R
350

trr, REVERSE RECOVERY TIME

IF, FORWARD CURRENT 80
300
70 30A
250
60

(ns)
(A)

15A
50 200
TJ = 150°C
40 150
30
TJ = 125°C TJ = 25°C 100
20
TJ = -55°C
50
10
0 0
0 0.5 1 1.5 2 2.5 3. 0 200 400 600 800 1000 1200
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
6000 45

IRRM, REVERSE RECOVERY CURRENT

T = 125°C T = 125°C
J J
Qrr, REVERSE RECOVERY CHARGE

V = 667V V = 667V
R 40 R

5000 60A
35
60A
4000 30

25
(nC)

(A)
3000
30A
20
30A
2000 15
15A 15A
10
1000
5

0 0
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs) -diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.2 70
Qrr Duty cycle = 0.5
trr T = 175°C
J
60
1.0
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)

IRRM 50
0.8
IF(AV) (A)

trr 40
0.6
30
0.4
Qrr 20

0.2 10

0.0 0
0 25 50 75 100 125 150 75 100 25125 50
150 175
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
300
CJ, JUNCTION CAPACITANCE

250

200
(pF)

150
1-2020

100

50
053-0002 Rev E

0
1 10 100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
 APT30D100(B/S)G
Vr

+18V diF /dt Adjust

APT10035LLL

0V
D.U.T.
30µH trr/Qrr
Waveform

PEARSON 2878
CURRENT
TRANSFORMER

Figure 9. Diode Test Circuit

1 IF - Forward Conduction Current

1 4
2 diF /dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3 IRRM - Maximum Reverse Recovery Current.
5 0.25 IRRM
4 trr - Reverse Recovery Time, measured from zero crossing where diode 3
current goes from positive to negative, to the point at which the straight 2
line through IRRM and 0.25 IRRM passes through zero.

5 Qrr - Area Under the Curve Defined by IRRM and trr.

Figure 10, Diode Reverse Recovery Waveform and Definitions

3
TO-247 Package Outline D PAK Package Outline
e3 100% Sn

4.69 (.185)
5.31 (.209) 4.90 (.193) 15.85 (.624) 13.30 (.524)
(Heat Sink)

5.10 (.201) 16.05(.632) 13.60(.535)

1.49 (.059) 1.00 (.039)
Cathode

2.49 (.098) 1.45 (.057)

1.60 (.063) 1.15(.045)

12.40 (.488)
Cathode

18.70 (.736) 12.70 (.500)

19.10 (.752)

0.40 (.016)
0.65 (.026)
1.20 (.047)
0.020 (.001) 1.90 (.075) 1.40 (.055)
0.250 (.010) 2.40 (.094)
2.10 (.083) 2.70 (.106)
0.40 (.016) 2.70 (.106) 1.15 (.045)
1.016 (.040) 1.45 (.057) (Base of Lead)
2.90 (.114)
5.45 (.215) BSC Heat Sink (Cathode)
(2 Plcs.) and Leads
are Plated

2.21 (.087) Anode

2.59 (.102) Cathode
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters (Inches)

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for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The
products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with
mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and
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entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights,
1-2020

Microsemi Headquarters licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this
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053-0002 Rev E

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