Basic Electronics Engineering

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Basic Electronics Engineering

PN Junction Formation and Diode Types

Presented By:
Hamza Yousaf
B.SC ELECTRONICS ENGINEER
UET TAXILA
Conductor: The form of matter that allows to pass electric current.

For example Copper, Siler, Gold

Insulators: The form of matter that does not allow to pass electric current

For example Rubber, Wood

Semi-Conductors: The form of matter which state exist between conductors and
insulators.

For example Silicon and Germanium

The Purest form of semiconductor (without any impurity atoms) are called intrinsic

semiconductor wile impure form of semiconductor (with impurity atoms) are called
extrinsic semiconductors.

Recall that the valence shell of an atom represents a band of energy levels and that the
valence electrons are attached to that band and called valance band.
When an electron gets enough additional energy, it can leave the valence shell, become a
free electron it is known as the conduction band.
The difference in energy between the valence band and the conduction band is called
an energy gap or band gap. It is measured in Electronic Volt.

It is shown clearly below:


P-Type and N- Type Semiconductors

N-Type:

Si and Ge are intrinsic form of semiconductor. When a Pentavalent impurity (atoms having
five valance electronics in their outer most shell phosphorus (P), bismuth (Bi), and
antimony (Sb)) is added in silicon crystal each pentavalent atom (Phosphorus or Antimony)
forms covalent bonds with four adjacent silicon atoms. Four of the P or Sb atom’s valence
electrons are used to form the covalent bonds with silicon atoms, leaving one extra
electron. This extra electron becomes a conduction electron because it is not involved in
bonding.
Because the pentavalent atom gives up an electron, it is often called a donor atom. The
number of conduction electrons can be carefully controlled by the number of impurity
atoms added to the silicon.
A conduction electron created by this doping process does not leave a hole in the valence
band because it is in excess of the number required to fill the valence band.
It is shown below:

The electrons are called the majority carriers in n-type material. Holes in an n-type

material are called minority carriers.

P-Type

When a trivalent impurity atoms ( Having three electrons in their outer most shell atom
boron (B), indium (In), and gallium(Ga)) like B is added in silicon crystal all three of the
boron atom’s valence electrons are used in the covalent bonds since four electrons are
required, a hole created when each trivalent atom is added. Because the trivalent atom can
take an electron, it is often referred to as an acceptor atom. The number of holes can be
carefully controlled by the number of trivalent impurity atoms added to the silicon.

The holes are called the majority carriers in n-type material. Electrons in an p-type

material are called minority carriers.

PN Junction Development
Both semiconductor materials are neutral (Free electrons and holes are revolving). When a
piece of N-type and P-type semiconductors are combined through a LAB process the free
electrons in the n region are randomly drifting in all directions.
At the instant of the PN junction formation, the free electrons near the junction in the n
region begin to diffuse across the junction into the p region where they combine with holes
near the junction.
When the PN junction is formed, the n region loses free electrons as they diffuse across the
junction. This creates a layer of positive charges (pentavalent ions) near the junction. As the
electrons move across the junction, the p region loses holes as the electrons and holes
combine. This creates a layer of negative charges (trivalent ions) near the junction.
These two layers of positive and negative charges form the Depletion Region or Potential
Barrier.
For Si it is 0.7V and for Ge it is 0.3V at room temperature 25 o C.
Diode Types (Special Purpose Diodes)
Sr. No Diode Symbolic Representation Biasing Applications
Methodology
1 Zener Reverse Used as a
Diode Biased to work Voltage
in break down Regulator
region

2 Varactor Reverse Tuning


Diode Biased with circuits like
the variable VHF UHF
Capacitance and satellite
characteristics receivers

3 Light Forward Indicator


Emitting Biased Made lamps and
Diode(LED) with GaAsP Readout
(Gallium displays like
Arsenic Seven
Phosphide Segment
Displays
4 Photo Reverse Used as
Diode Biased when Photo
the light is voltaic cells
thrown upon (PV) in Solar
them system
5 Laser Compact
Diode Disk for
Read and
write data
Forward
Laser
Biased
Printer and
Optical
Fiber
System
6 Schottky Forward High
Diode or Biased Frequency
Hot Carrier Doped with and Fast
Diode semiconductor switching in
and metal like Digital
Silver Gold Electronics
(TTL)
7 PIN Diode When Reverse DC
Biased it acts controlled
as a constant micro wave
capacitance switches
while in and photo
forward detectors in
biased it acts optical Fiber
like a current system
control
resistance
8 Step We have to Fast
Recovery switch it from switching
Diode forward VHF
biased to
reverse biased
for working
9 Tunnel Forward
Diode Biased with High
special Frequencies
Negative Devices
Resistance
characteristics
10 Current
Regulator Current
Diode or Forward Regulation
Constant Biased Devices
Current
Diode

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