NAME: _______________________________ Quiz 5 Set B Sem.

2 20/21 UNITEN

ID: __________________ Date: 13/4/21 (Tuesday) /20

An npn bjt transistor (Ge) can be fabricated if the emitter efficiency (e) is more
than 80%. Use the following parameters to find e.
Nde = 1019 cm-3, Nab = 1018 cm-3, Ndc = 1016 cm-3, A = 10-5 cm2, IEn = 2.14 x10-3 A, VF = 0.15V,
VT = kBT/e = 0.026 V, e = 1.6 × 10-19 C.

List of Equations

kBT  N a N d 
Built-in voltage Vbi  ln  2 
e  ni 
Total current flow in pnp BJT
A.e..Db . pb 0   eVEB   A.e.DE . pe 0   eVEB  
I total  I E ( n)  I E ( p)   exp    1   exp    1
xbp   kBT   LE   kBT  

Emitter efficiency (pnp)

neo De xbp
e 1
pbo Db Le

Diffusion length Ln   n Dn

Conduction Band Valence Band Intrinsic Carrier

Material p = n Dn Dp
Effective Density (NC) Effective Density Concentration (ni =
(s) (cm2/s) (cm2/s)
(cm-3) (NV) (cm-3) pi) (cm-3)

Ge 1.04 x 1019 6.00 x10 18 2.33 x 1013 10-8 101 49.2