ECCE4467/MCTE 4210 Power Electronics and Drives

SULTAN QABOOS UNIVERSITY
COLLEGE OF ENGINEERING
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
ECCE4467/MCTE 4210
Power Electronics and Drives
UNIT 2
POWER ELECTRONIC DEVICES
Slides Prepared by: Dr. Rashid Al-Abri
Modified and Presented by: Dr. Khaled Alawasa
These Slides are Based On (Prof. Mohamed El-Sharkawi, Prof. Adel Gastli, Muhammed Rashid, and Mohan).
2/4/2023 ECCE4467&MCTE4210: Power Electronics and 1

CONTENTS
Introduction and history of power
semiconductor devices
Classification of power semiconductor
devices
Rating of Power Electronic Devices
Thermal (overheat) protection/Heat Sink
di/dt and dv/dt protection/Sunnber Curcuit

EXAMPLE OF POWER ELECTRONICS CIRCUITS

POWER ELECTRONIC SWITCHES
Diac Triac
Thyristor IGCT
Diode
IGBT MOSFET
Thyristor GTO
(SCR)

THE HISTORICAL DEVELOPMENT OF POWER
SEMICONDUCTORS/POWER ELECTRONICS
Source: https://www.researchgate.net/figure/The-historical-development-of-power-semiconductors-power-electronics-and-
reliability_fig1_346807124

A power electronic switch is characterized by

having the two states on and off
Ideally being either a short circuit or an open
circuit.
 Applications using switching devices are
desirable because of the relatively small power
loss in the device.
If the switch is ideal, either the switch voltage or
the switch current is zero

Real devices absorb some power when in the on
state and when making transitions between the
on and off states, but circuit efficiencies can still
be quite high.
Some electronic devices such as transistors can
also operate in the active range where both
voltage and current are nonzero, but it is
desirable to use these devices as switches when
processing power

INTRODUCTION: FUNCTION
Power switches are the work-
horses of PE converters.
Operate in two states:
– Fully on. i.e. switch closed.
Conducting state
– Fully off , i.e. switch opened.
Blocking state
Power switches never operate in
linear mode.
CLASSIFICATION OF POWER ELECTRONIC
SWITCHES
Classification of modern power electronic switches based on (a) number of terminals, (b) number of layers or junctions, (c) controllability
and (d) bidirectional capability.

POWER DIODES
CONTENTS
1. Introduction
2. Diode Characteristics
3. Reverse Recovery Characteristics
4. Types of Power Diodes

VARIOUS GENERAL-PURPOSE DIODE CONFIGURATIONS. (COURTESY OF POWEREX, INC.)

FAST-RECOVERY DIODES. (COURTESY OF POWEREX, INC.)

INTRODUCTION
Power diodes have larger power-,
voltage-, and current-handling
capabilities than those of ordinary
signal diodes.
Frequency response or switching
speed is low compared with that of
signal diodes.
Power diodes play a significant role
in power electronics.

POWER DIODE CHARACTERISTICS
A power diode is a two-terminal pn-junction device.
When anode voltage is positive with respect to the
cathode, the diode is said to be forward biased and
it conducts.
When diode conducts it has a anode cathode
small forward voltage drop i D1
(Vf= 0.2 - 3V) which depends
+v -
on manufacturing process and
junction temperature.

POWER DIODE CHARACTERISTICS
When reversed (or blocking state), a

negligibly small leakage current (mA to
mA) flows until the reverse breakdown
occurs.
Diode should not be operated at reverse
voltage greater than its reverse
breakdown voltage VBR

V-I characteristics of power diode
i
i Breakdown Reverse-biased Forward-biased
region region region
ON ID
-VBR OFF ON
VD
0 v 0 v
OFF Reverse
Leakage VTD
Current Is
Breakdown voltage Threshold voltage

Cut-in voltage
Ideal Practical Turn-on-voltage
Operation in breakdown region will not be destructive, provided that the power
dissipation is within the “safe level” specified by manufacturer’s data sheet.

FORWARD & REVERSE BIASED

REVERSE RECOVERY CHARACTERISTICS
An important dynamic characteristic of a

nonideal diode is reverse recovery current. When
a diode turns off, the current in it decreases and
momentarily becomes negative before becoming
zero.
The time trr is the reverse recovery time, which is
usually less than 1 s. This phenomenon may
become important in high-frequency applications

REVERSE RECOVERY CHARACTERISTICS
 Effects of reverse recovery are: increase in switching losses,
increase in voltage rating, over-voltage (spikes) in inductive loads
Reverse recovery takes place

during Turn-off transition
period

TYPES OF POWER DIODES
Line frequency (general purpose):
– On state voltage: very low (below 1V)
– Large trr (about 25ms) (very slow response)
– Very high current ratings (up to 5kA)
– Very high voltage ratings(5kV)
– Used in line-frequency (50/60Hz) applications such as
rectifiers
Fast recovery
– Very low trr (<1ms).
– Power levels at several hundred volts and several
hundred amps
– Normally used in high frequency circuits

TYPES OF POWER DIODES
Schottky
– Very low forward voltage drop (typical 0.3V)
– Limited blocking voltage (50-100V)
– Used in low voltage, high current application such as
switched mode power supplies.
Silicon Carbide Diodes: Silicon Carbide (SiC) is a
new material in PE which has high performance
characteristics:
– Ultra low power loss and high reliability
– No reverse recovery time
– Ultra fast switching behavior
– No temperature influence on the switching behavior
DIAC
 It is like a junction transistor without a base lead (it is a
two-lead device) and accomplishes its switching action
by breakdown at a certain voltage.
 There are also four layer devices with a similar mode of
operation known as four-layer diodes
Cross section and i–v plot of a diac.

DIAC
DIAC bidirectional response

SUMMARY
Fast-recovery diodes are designed to have a
smaller trr than diodes designed for line-
frequency applications.
Silicon carbide (SiC) diodes have very little
reverse recovery, resulting in more efficient
circuits, especially in high-power applications.

SUMMARY
 Schottky diodes have a metal-to-silicon barrier rather
than a P-N junction.
 Schottky diodes have a forward voltage drop of
typically 0.3 V. These are often used in low-voltage
applications where diode drops are significant relative
to other circuit voltages. The reverse voltage for a
Schottky diode is limited to about 100 V. The metal-
silicon barrier in a Schottky diode is not subject to
recovery transients and turn-on and off faster than P-N
junction diodes.

THYRISTORS
Thyristors are electronic switches used in
some power electronic circuits where control
of switch turn-on is required.
 The term thyristor often refers to a family of
three-terminal devices that includes the
silicon-controlled rectifier (SCR), the triac, the
gate turnoff thyristor (GTO), the MOS
controlled thyristor (MCT), and others.

THYRISTORS
Thyristor and SCR are terms that are
sometimes used synonymously.
Thyristors are capable of large currents and
large blocking voltages for use in high-power
applications, but switching frequencies cannot
be as high as when using other devices such
as MOSFETs.

THYRISTOR (SCR)
 The three terminals of the SCR are
the anode, cathode, and gate
 It must have a gate current applied
while it has a positive anode-to-
cathode voltage.
 After conduction is established, the
gate signal is no longer required to
maintain anode current.
 The SCR will continue to conduct as
long as the anode current remains
positive and above a minimum
value called the holding level.

THYRISTORS

THYRISTOR (SCR)
A Anode Anode (A)
A p
p
J1
n n
G J2
p
p
G Gate n
K J3
n
Cathode Cathode (K) Gate (G)

K
Symbol Three pn-junctions Cross section

THYRISTOR (SCR)
 three states of a Thyristor:
1. Forward blocking State
2. Forward conducting State (ON-state)
3. Reverse blocking State

CHARACTERISTICS OF THYRISTORS
iT
Forward volt-drop
(conducting)
Latching
A current
+ Gate Forward
+ Reverse triggered breakover
VAK breakdown Holding voltage
voltage current IL
-
Vs K
IH
RL VBO VAK
- iT
Reverse Forward
leakage leakage
Circuit current current
V-I characteristics

THYRISTOR TURN-ON-OFF CONDITIONS
Turning on Conditions
VAK  0
Thyristor turns on and remains on even if IG is
IG  0 just one pulse
IT  I L
Turning off Conditions
Thyristor turns off and remains off if turning on

IT  I H conditions are not satisfied

THYRISTOR’S TURN OFF
iT  I H Thyristor turns off
 If anode current is maintained below the holding current

during a sufficient long time for all excess carriers in the
four layers to be swept out or recombined, then the
thyristor turns off completely.
 There are two main types of techniques to turn off a
thyristor:
– Line commutation
– Forced commutation

GATE TURNOFF THYRISTOR (GTO)
like the SCR, is turned on
by a short-duration gate
current if the anode-to-
cathode voltage is positive.
However, unlike the SCR,
the GTO can be turned off
with a negative gate
current.

GATE TURNOFF THYRISTOR (GTO)
The GTO is therefore suitable for some

applications where control of both turn-on and
turnoff of a switch is required.
 The negative gate turnoff current can be of brief
duration (a few microseconds), but its magnitude
must be very large compared to the turn-on
current.
 Typically, gate turnoff current is one third the on-
state anode current.

TRIAC
 The triac is a thyristor that is

capable of conducting current in
either direction. The triac is
functionally equivalent to two
antiparallel SCRs (in parallel but
in opposite directions).
 Common incandescent light-
dimmer circuits use a triac to
modify both the positive and
negative half cycles of the input
sine wave.

MOS-CONTROLLED THYRISTOR (MCT)
 The MOS-controlled thyristor (MCT) is
a device functionally equivalent to the
GTO but without the high turnoff gate
current requirement.
 The MCT has an SCR and two MOSFETs
integrated into one device. One
MOSFET turns the SCR on, and one
MOSFET turns the SCR off.
 The MCT is turned on and off by
establishing the proper voltage from
gate to cathode, as opposed to
establishing a gate current in the GTO.

THYRISTORS
Thyristors were historically the power
electronics switch of choice because of high
voltage and current ratings available.
Thyristors are still used, especially in high-
power applications, but ratings of power
transistors have increased greatly, making the
transistor more desirable in many
applications.

TRANSISTORS
 Transistors are operated as switches in power electronics
circuits.
 Transistor drive circuits are designed to have the transistor
either in the fully on or fully off state.
 This differs from other transistor applications such as in a
linear amplifier circuit where the transistor operates in the
region having simultaneously high voltage and current.
 Unlike the diode, turn-on and turnoff of a transistor are
controllable.
 Types of transistors used in power electronics circuits
include MOSFETs, bipolar junction transistors (BJTs), and
hybrid devices such as insulated-gate bipolar junction
transistors (IGBTs).

BI-POLAR JUNCTION TRANSISTOR

BI-POLAR JUNCTION TRANSISTOR
 The on state for the transistor is achieved by providing sufficient base
current to drive the BJT into saturation.
 The BJT is a current controlled device
 The collector-emitter saturation voltage is typically 1 to 2 V for a power

BJT
 Zero base current results in an off transistor.
 The drive circuit to provide a high base current is a

significant power circuit in itself

Bi-polar Junction Transistor (BJT)
(C)
(C) (C) IC IC   I B
Collector V CB
N IB
(B)
Base
P
(B) (B)
V CE VCE  VCB  VBE
N V BE
Emitter IE
(E) I E  I B  IC
(E) (E)

(C)
IC
CHARACTERISTICS OF BI-POLAR
V CB TRANSISTOR
IB
V CE
(B)
 is small
V BE
Saturation Region IB1
IE
IB (E) IC
IB2< IB1
 is high
Linear Region
IB= 0
V 0.6 VCE
BE Cut Off Region
Base Characteristics Collector Characteristics

IC IC IB max
RL VCC
(1)
IB RL
V CE
V CC
(2)
IB = 0
VCC VCE
VCC  VCE  RL IC
Saturation Region Cutoff Region
Closed
At point (1) At point (2)
switch
VCE is very small IC is very small
VCC
IC  Open VCE  VCC
RL switch

MAIN FEATURES OF BJT
Advantages Limitations
 Current controlled device
 Simple switch
 Base current must be present
 Low on-state or
saturation voltage during the closing period
 High off-state voltage  Require reverse base current
capability during turning off.
 High base losses
 Low current gain in the saturation
region
 Low frequencies (fs<5kHz)
 Parameters are temperature
sensitive
 Unipolar voltage device

FIELD EFFECT TRANSISTORS
(FET & MOSFET)

MOSFET
 The MOSFET is a voltage-controlled device
 Power MOSFETs are of the enhancement type rather than
the depletion type
 A sufficiently large gate-to-source voltage will turn the
device on, resulting in a small drain-to-source voltage
 Ratings are to1500 V and more than 600 A.
 MOSFET switching speeds are greater than those of BJTs
and are used in converters operating intothe megahertz
range.

FIELD EFFECT TRANSISTOR (FET)
(D) ID V GS1
ID
VGS2 < V GS1
(G)
VDS
VGS3 < V GS2
VGS
0 < VGS4 < V GS3
(S)
VDS

MAIN FEATURES OF MOSFET
Voltage controlled High-on-state drop as

device high as 10V
Low gate losses Lower off-state voltage
Parameters are less capability
sensitive to junction Unipolar voltage device
temperature
No need for negative
voltage during turn-off

INSULATED GATE BIPOLAR
TRANSISTOR (IGBT)

INSULATED GATE BIPOLAR TRANSISTOR
(IGBT)
(C)
C
(D)

IC
(G)
G I
b
VGS
FET BJT
Ie
E
(E)

IC VG1 > VG2 > VG3
VG2
VG3
VCE C
IC
IC
VG E

MAIN FEATURES OF IGBT
 Voltage controlled device  Unipolar voltage device
 Low gate losses  Lower off-state voltage
 Low on-state voltage capability
 Parameters are less
sensitive to junction
temperature
 No need for negative
voltage during turn-off
 High switching frequencies
(fs > 10kHz)

RATINGS OF POWER ELECTRONICS
DEVICES

FORWARD CONDUCTION LOSS
Ion Ion +Von-
+Von-
Ideal switch Real switch

Ideal switch:
– Zero voltage drop across it during turn-on (Von).
– Although the forward current ( Ion ) may be large, the losses on the switch
is zero
 Real switch:
– Exhibits forward conduction voltage (on state) (between 1-3V, depending
on type of switch) during turn on.
– Losses is measured by product of volt-drop across the device Von with the
current, Ion, averaged over the period.
 Major loss at low frequency and DC

QUESTION
What are the desirable characteristics in a
controllable switch ?

DESIRABLE CHARACTERISTICS
 Based on the previous analysis, the following characteristics
in a controllable switch are desirable:
1. Small leakage current in the off state.
2. Small on-state voltage Von to minimize on-state power
losses.
3. Short turn-on and turn-off times. This will permit the device
to be used at high switching frequencies.
4. Large forward- and reverse-voltage-blocking capability. This
will minimize the need for series connection of several
devices, which complicates the control and protection of the
switches.

DESIRABLE CHARACTERISTICS
5. High on-state current rating. In high-current applications,
this would minimize the need to connect several devices in
parallel, thereby avoiding the problem of current sharing.
6. Positive temperature coefficient of on-state resistance. This
ensures that paralleled devices will share the total current
equally.
7. Small control power required to switch the device. This will
simplify the control circuit design.
8. Capability to withstand rated voltage and rated current
simultaneously while switching. This will eliminate the need
for external protection (snubber) circuits across the device.
9. Large dvldt and dildt ratings. This will minimize the need
for external circuits otherwise needed to limit dvldt and
dildt in the device so that it is not damaged.
RATINGS OF POWER ELECTRONICS DEVICES
Table 1.3 Ratings of Power Semiconductor Devices

RATINGS OF POWER ELECTRONICS DEVICES
Table 1.3 Ratings of Power Semiconductor Devices

RATINGS OF POWER ELECTRONIC DEVICES
Steady State Circuit ratings:

– The current and voltage of the circuit should
always be less than the device ratings.
Junction Temperature
– Junction temperature rises due to power losses.
– Losses inside solid-state devices are due to
impurities of their material as well as the
operating conditions of their circuits.

– During the conduction period, the voltage drop

across the solid-state device is about one volt.
This voltage drop multiplied by the current
inside the device produces losses.
– When the device is in the blocking mode
(open), a small amount of leakage current
flows inside the device which also produces
losses.

– The gate circuits of the SCRs and FETs, and the

base circuits of the transistors, produce losses due
to their triggering signals.
– Every time the solid state device is turned on or
off, switching losses are produced. These losses
are usually higher for faster devices, and for
devices operating in high frequency modes.
– To reduce the effect of heat on the devices we
need to dissipate the heat out of the device as
much as possible using Heat Sinks.

POWER SWITCH LOSSES
 Converter losses: 1) Blocking (reverse) state losses 2) Switching losses
3)Forward condition state losses.
① ② ③ ② ①

POWER SWITCH LOSSES
 The losses will lead to heat generation within the
devices, and consequently arise in temperature.
• If a power switch is not cooled to its specified
junction temperature, the full power capability
of the switch cannot be realised.
• Derating of the power switch ratings may be
necessary.
 Therefore, Power semiconductors devices must be
cooled by design a heat sink
Derating is the operation of a device at less than its rated maximum capability
to prolong its life.

COOLING SYSTEM (HEAT SINKS)
OVERHEAT PROTECTION
A heat sink is a passive heat exchanger that
cools a device by dissipating heat into the
surrounding medium
The temperature level to which the base can
be allowed to rise is not high enough for much
heat dissipation to takes place by radiation,
hence most of the heat sink transfer takes
place by convection, to the air in the case of
the metal-finned heat sink.

COOLING SYSTEM ( HEAT SINKS)
PE devices are usually mounted on a heat sink.
The heat generated in the junction area is
transferred to the base, and then to a heat sink
(a) Air-cooling (a) Water-cooling
Typical cooling systems
Fin-type Heat Sink

2/4/2023 ECCE4467&MCTE4210:
SCR (stud-type) on Power Electronics
air-cooled kits and 73
 Heat transfer will take place from a higher temperature
region to a lower temperature region.
 It is generally more convenient to work in terms of thermal
resistance, Rθ, which is defined as the ratio of temperature
change to power.
 The Heat transfer, P, is proportional to the temperature
difference, the ratio being known as the thermal
resistance, Rθ
T 1 -T 2 T T1 and T2 are the temperature
Pd   R  of the hot and cold bodies
R Pd
Analogy
An analogy between the thermal (and magnetic) equations and Ohm’s law and
Kirchhoff’s laws is often made to form models of heat flow. The temperature
difference ΔT could be thought of as a voltage drop ΔV, thermal resistance Rθ
corresponds to electrical resistance R, and power dissipation Pd is analogous
to electrical current I.
 The heat flows from the
junction to the base, to the
heat sink, to the surrounding
area.
 The average power dissipation
Pd and maximum junction
temperature Tj , in conjunction
with the ambient temperature
Ta, determine the necessary
heat sink.

COOLING SYSTEM ( HEAT SINKS)
 The total thermal resistance will
be the series addition of the
individual thermal resistance for
each section. The total thermal
resistance from the junction to
the surrounding (ambient) is:
R ja  R jb  R bh  R ha
The virtual junction temperature Tvj is :
Tvj  T a  PR ja R jb R bh R ha
Ta is the ambient Temperature
HEAT SINKS-EXAMPLE
 A Thyristor with a steady power loss 30 W has a junction to
the heat sink thermal resistance 0.7o C/W. Determine the
maximum value of the thermal resistance the heat sink
can have if the ambient temperature is 40oC and the
junction temperature is limited to 125oC
 Solution
– The total thermal resistance is
T T j -T a 125 - 40
R  ja     2.83o C /W
Pd P 30
– The total thermal resistance of the heat sink

R ha  R ja - (R jb  R bh )  2.83 - 0.7  2.13o C /W
junction to the heat sink
– The temperature at the base T b  T a  Pd R hs  40  (30  2.13)  104 C

o

TRANSIENT PERIOD
Switching from ON to OFF and vice versa
refers to transient state/period of the switch.
Devices/ switches during turn-on and turn-off
transients may expose to an overcurrent
and/or overvoltage conditions.
Transient
OFF
ON OFF

Surge current:
– It is the absolute maximum of the non-repetitive
impulse current
Switching time:
– Turn-on time is the interval between applying the
triggering signal and the turn-on of the device.
– The turn-off time is the interval from the on-state
to the off-state.
– The larger the switching time the smaller is the
operating frequency of the circuit.

Critical rate of rise of current (or maximum di/dt):
– A solid-state device can be damaged if the di/dt of the
circuit exceeds the maximum allowable value of the
device.
– di/dt damage can occur even if the current is below
the surge limit of the device.
– To protect the device from this damage, a snubbring
circuit for di/dt must be used.
Question: What is(are) the element(s) of di/dt snubbring

circuit?

Critical rate of rise of voltage (or maximum
dv/dt):
– When dv/dt across a device exceeds its allowable
limit, the device is forced to close. This is a form
of false triggering.
– It may lead to excessive current or excessive
di/dt.
– To protect the device against excessive dv/dt, a
snubbring circuit for dv/dt must be used.
Question : What is(are) the element(s) dv/dt snubbring

circuit?

INDUCTOR AND CAPACITOR
“TRANSIENT” RESPONSE
Inductor and capacitor (known as storage
elements) have inherent transient response (the
output needs some a time(delay) to react to a
given input).
di l dv c
vl  L ic  L
dt dt
SNUBBRING CIRCUIT
Turn-on snubber circuits
Ls
+
Vce
-
turn-off snubber circuits

POWER ELECTRONICS MANUFACTURERS
MAJOR MANUFACTURERS OF POWER SEMICONDUCTORS
 https://www.marketing-psycho.com/major-manufacturers-of-
power-semiconductors/
 Infineon
 Mitsubishi Electric
 Vishay
 ON Semiconductor
 STMicroelectronics Check company’s website for more details.
 ABB Semiconductors
 Littelfuse
 Semikron
 Toshiba
 Fuji Electric

SILICON VALLEY
Read more about Silicon Valley

UNIT SUMMARY
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SULTAN QABOOS UNIVERSITY

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A power electronic switch is characterized by

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When reversed (or blocking state), a

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Breakdown voltage Threshold voltage

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An important dynamic characteristic of a

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Reverse recovery takes place

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Cross section and i–v plot of a diac.

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Cathode Cathode (K) Gate (G)

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Turning off Conditions

Thyristor turns off and remains off if turning on

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iT  I H Thyristor turns off

 If anode current is maintained below the holding current

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The GTO is therefore suitable for some

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 The triac is a thyristor that is

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 The BJT is a current controlled device

 The collector-emitter saturation voltage is typically 1 to 2 V for a power

 Zero base current results in an off transistor.

 The drive circuit to provide a high base current is a

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Base Characteristics Collector Characteristics

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