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Mass Transfer Slides - CHE304 - Chapter 23
Mass Transfer Slides - CHE304 - Chapter 23
Mass Transfer Slides - CHE304 - Chapter 23
CHE304
Chapter 23
Differential Equations of Mass Transfer
Dr Mohammed Gamal Mohammed
1
Fick’s First Law – a Good Law, but …
Fick’s first law is mathematically represented as:
𝐽𝐴 = −𝐷𝐴𝐵 ∇cA
It is used for calculating the flux due to the concentration difference, however it has some
limitations:
1. The equation does not take into consideration the time dependence of the concentration, i.e.
unsteady state diffusion.
2. The equation does not take into consideration the increase or decrease of concentration due
to production or consumption in a chemical reaction.
3. The equation calculates a constant value of the flux with distance and does not consider the
case of variation of flux with distance. Hence, cannot predict the concentration profile along
the distance.
2
The General Equation Must Include …
• A general equation for diffusional mass transfer is needed to be usable under any
conditions.
3. A term that allows the prediction of concentration at any point within diffusion distance.
• They are balance equations (mass or energy) that consider the transport of
mass or energy in three dimensions.
4
Revision of Notations of PDE’s
Scalar and Vector quantities
• Scalar is a quantity that is fully described by a magnitude ONLY.
Example: Volume, mass, time, concentration, mole fraction, …
etc.
5
Revision of Notations of PDE’s
Gradient of a scalar quantity A: grad 𝑐 𝑜𝑟 𝜵𝑐, converts a scalar to a vector quantity.
- In rectilinear (Cartesian) coordinates
𝜕𝑐 𝜕𝑐 𝜕𝑐
grad 𝑐 = 𝛁c = 𝒆 + 𝒆 + 𝒆
𝜕𝑥 𝒙 𝜕𝑦 𝒚 𝜕𝑧 𝒛
- In cylindrical coordinates
𝜕c 1 𝜕𝑐 𝜕𝑐
grad 𝑐 = 𝛁c = 𝒆𝒓 + 𝒆 + 𝒆
𝜕𝑟 𝑟 𝜕𝜃 𝜽 𝜕𝑧 𝒛
- In spherical coordinates
𝜕c 1 𝜕𝑐 1 𝜕𝑐
grad 𝑐 = 𝛁c = 𝒆𝒓 + 𝒆 + 𝒆
𝜕𝑟 𝑟 𝜕𝜃 𝜽 𝑟 𝑠𝑖𝑛 𝜙 𝜕𝜙 𝝓
6
Revision of Notations of PDE’s
Divergence of the vector A: div 𝑵 𝑜𝑟 𝛁. 𝐍, converts a vector to a scalar quantity
- In rectilinear (Cartesian) coordinates
𝜕 𝜕 𝜕
div 𝑵 = 𝛁. 𝐍 = 𝑁𝑥 + 𝑁𝑦 + 𝑁𝑧
𝜕𝑥 𝜕𝑦 𝜕𝑧
- In cylindrical coordinates
1 𝜕 1 𝜕 𝜕
div 𝑵 = 𝛁. 𝐍 = 𝑟𝑁𝑟 + 𝑁 + 𝑁
𝑟 𝜕𝑟 𝑟 𝜕𝜃 𝜃 𝜕𝑧 𝑧
- In spherical coordinates
1 𝜕 2 1 𝜕 1 𝜕
div 𝑵 = 𝛁. 𝐍 = 2 𝑟 𝑁𝑟 + 𝑁𝜃 sin 𝜃 + 𝑁𝜙
𝑟 𝜕𝑟 𝑟 𝑠𝑖𝑛 𝜃 𝜕𝜃 𝑟 sin 𝜙 𝜕𝜙
7
Revision of Notations of PDE’s
Divergence of two multiplied vectors A
𝛁. 𝐀𝐁 = 𝑨𝛁. 𝑩 + 𝑩𝛁. 𝑨
𝜕 𝜕 𝜕 𝜕 𝜕 𝜕
𝛁. 𝐀𝐁 = 𝐀 𝐵 + 𝐵 + 𝐵 +𝐁 𝐴 + 𝐴 + 𝐴
𝜕𝑥 𝑥 𝜕𝑦 𝑦 𝜕𝑧 𝑧 𝜕𝑥 𝑥 𝜕𝑦 𝑦 𝜕𝑧 𝑧
The substantial derivative (also called total derivative and material derivative) of vector A
𝐷𝐴 𝜕𝐴 𝜕𝐴 𝜕𝐴 𝜕𝐴
= + 𝑣𝑥 + 𝑣𝑦 + 𝑣𝑧
𝐷𝑡 𝜕𝑡 𝜕𝑥 𝜕𝑦 𝜕𝑧
8
Revision on Some Terms
𝜌𝐴 Mass concentration of A (gm A/volume of mixture)
𝜌 Mixture density (gm mixture/volume of mixture)
𝜔𝐴 Mass fraction of A (mass of A/mass of mixture)
𝑐𝐴 Molar concentration of A (moles of A/volume of mixture)
𝑐 Molar concentration of the mixture (moles of mixture/volume of mixture)
𝑥𝐴 Mole fraction of A (moles of A/moles of mixture)
𝑛𝐴 Number of moles of A (moles)
𝐧𝑨 Mass flux relative to stationary axis (mass of A/unit area/time)
𝑵𝑨 Molar flux relative to stationary axis (moles of A/unit area/time)
𝐣𝐀 Mass flux relative to mass average velocity (mass of A/unit area/time)
𝑱𝑨 Molar flux relative to molar average velocity (moles of A/unit area/time)
9
Conservation of Mass
Conservation of mass equation through the control volume:
𝑀𝑎𝑠𝑠 𝑟𝑎𝑡𝑒 𝑔𝑜𝑖𝑛𝑔 𝑀𝑎𝑠𝑠 𝑟𝑎𝑡𝑒 𝑔𝑜𝑖𝑛𝑔 𝑁𝑒𝑡 𝑚𝑎𝑠𝑠 𝑀𝑎𝑠𝑠 𝑟𝑎𝑡𝑒 𝑜𝑓
𝑜𝑢𝑡 𝑓𝑟𝑜𝑚 𝑡ℎ𝑒 − 𝑖𝑛𝑡𝑜 𝑡ℎ𝑒 + 𝑎𝑐𝑐𝑢𝑚𝑢𝑙𝑎𝑡𝑒𝑑 𝑤𝑖𝑡ℎ𝑖𝑛 − 𝑝𝑟𝑜𝑑𝑢𝑐𝑡𝑖𝑜𝑛 𝑤𝑖𝑡ℎ𝑖𝑛 = 0
𝑐𝑜𝑛𝑡𝑟𝑜𝑙 𝑣𝑜𝑙𝑢𝑚𝑒 𝑐𝑜𝑛𝑡𝑟𝑜𝑙 𝑣𝑜𝑙𝑢𝑚𝑒 𝑡ℎ𝑒 𝑐𝑜𝑛𝑡𝑟𝑜𝑙 𝑣𝑜𝑙𝑢𝑚𝑒 𝑡ℎ𝑒 𝑐𝑜𝑛𝑡𝑟𝑜𝑙 𝑣𝑜𝑙𝑢𝑚𝑒
10
Mass Going In and Out of the Control Volume
• Mass of species A going into the control volume in z direction perpendicular to the
area ∆𝑥∆𝑦 is expressed as 𝜌𝐴 𝑣𝐴𝑧 ∆𝑥∆𝑦 ȁ𝑧
• By substitution:
For x direction:
For y direction:
12
Accumulation and Production
• Rate of mass accumulated within the control volume:
13
Substitution in the Conservation of Mass Eq
𝑀𝑎𝑠𝑠 𝑟𝑎𝑡𝑒 𝑔𝑜𝑖𝑛𝑔 𝑀𝑎𝑠𝑠 𝑟𝑎𝑡𝑒 𝑔𝑜𝑖𝑛𝑔 𝑁𝑒𝑡 𝑚𝑎𝑠𝑠 𝑀𝑎𝑠𝑠 𝑟𝑎𝑡𝑒 𝑜𝑓
𝑜𝑢𝑡 𝑓𝑟𝑜𝑚 𝑡ℎ𝑒 − 𝑖𝑛𝑡𝑜 𝑡ℎ𝑒 + 𝑎𝑐𝑐𝑢𝑚𝑢𝑙𝑎𝑡𝑒𝑑 𝑤𝑖𝑡ℎ𝑖𝑛 − 𝑝𝑟𝑜𝑑𝑢𝑐𝑡𝑖𝑜𝑛 𝑤𝑖𝑡ℎ𝑖𝑛 = 0
𝑐𝑜𝑛𝑡𝑟𝑜𝑙 𝑣𝑜𝑙𝑢𝑚𝑒 𝑐𝑜𝑛𝑡𝑟𝑜𝑙 𝑣𝑜𝑙𝑢𝑚𝑒 𝑡ℎ𝑒 𝑐𝑜𝑛𝑡𝑟𝑜𝑙 𝑣𝑜𝑙𝑢𝑚𝑒 𝑡ℎ𝑒 𝑐𝑜𝑛𝑡𝑟𝑜𝑙 𝑣𝑜𝑙𝑢𝑚𝑒
𝜕𝜌𝐴
𝐧𝑨,𝒛 ∆𝑥∆𝑦 ቚ − 𝐧𝑨,𝒛 ∆𝑥∆𝑦 ቚ + ∆𝑥∆𝑦∆𝑧 − 𝑟𝐴 ∆𝑥∆𝑦∆𝑧 = 0
𝑧+∆𝑧 𝑧 𝜕𝑡
Dividing by ∆𝑥∆𝑦∆𝑧
𝜕 𝜕 𝜕 𝜕𝜌𝐴
𝐧𝑨,𝒙 + 𝐧𝑨,𝒚 + 𝐧𝑨,𝒛 + − 𝑟𝐴 = 0
𝜕𝑥 𝜕𝑦 𝜕𝑧 𝜕𝑡
14
Equation of Continuity
𝜕 𝜕 𝜕 𝜕𝜌𝐴 The same derivation can be applied using molar unit
𝐧𝑨,𝒙 + 𝐧𝑨,𝒚 + 𝐧𝑨,𝒛 + − 𝑟𝐴 = 0
𝜕𝑥 𝜕𝑦 𝜕𝑧 𝜕𝑡 For component “A”
It is the equation of continuity of component A, can 𝜕𝑐𝐴
be written as 𝛁. 𝐍𝑨 + − 𝑅𝐴 = 0
𝜕𝑡
𝜕𝜌𝐴
𝛁. 𝐧𝑨 + − 𝑟𝐴 = 0 For component “B”
𝜕𝑡
𝜕𝑐𝐵
For another component “B” 𝛁. 𝐍𝑩 + − 𝑅𝐵 = 0
𝜕𝑡
𝜕 𝜕 𝜕 𝜕𝜌𝐵
𝐧𝑩,𝒙 + 𝐧𝑩,𝒚 + 𝐧𝑩,𝒛 + − 𝑟𝐵 = 0
𝜕𝑥 𝜕𝑦 𝜕𝑧 𝜕𝑡
𝜕𝜌𝐵 The equation of continuity of the general form of
𝛁. 𝐧𝑩 + − 𝑟𝐵 = 0
𝜕𝑡 diffusion mass transfer that can be used in any case
of diffusional mass transfer.
15
The General Equation Must Include …
• A general equation for diffusional mass transfer is needed to be usable under any
conditions.
? 3. A term that allows the prediction of concentration at any point within diffusion distance.
17
Equation of Continuity in Molar Units
• Same derivation can be applied using molar units resulting in:
𝜕𝑐𝐴 Equations in mass units
𝛁. 𝐍𝑨 + − 𝑅𝐴 = 0
𝜕𝑡 • For component A
𝜕𝑐𝐵 𝜕𝜌𝐴
𝛁. 𝐍𝑩 + − 𝑅𝐵 = 0 𝛁. 𝐧𝑨 + − 𝑟𝐴 = 0
𝜕𝑡 𝜕𝑡
Adding continuity equations for A and B: • For component B
𝜕 𝑐𝐴 + 𝑐𝐵 𝜕𝜌𝐵
𝛁. 𝐍𝑨 + 𝐍𝑩 + − 𝑅𝐴 + 𝑅𝐵 = 0 𝛁. 𝐧𝑩 + − 𝑟𝐵 = 0
𝜕𝑡 𝜕𝑡
Where 𝑅𝐴 and 𝑅𝐵 are the rates of production of A and B in moles/volume/time • For a mixture
𝐍𝑨 + 𝐍𝑩 = 𝑐𝐴 𝑣𝐴 + 𝑐𝐵 𝑣𝐵 = 𝑐𝑉 𝜕𝜌
𝑐𝐴 + 𝑐𝐵 = 𝑐 𝛁. 𝜌𝐯 + =0
𝜕𝑡
In case of moles, 𝑅𝐴 = −𝑅𝐵 only if the stochiometric coefficients of both
components is the same, so the general form of the continuity equation of a
mixture is:
𝜕𝑐
𝛁. 𝑐𝑽 + − 𝑅𝐴 + 𝑅𝐵 = 0
𝜕𝑡
18
Use of Continuity Equations
• The main goal of the equations is to give a tool to evaluate the concentration of
components or a mixture as a function of time and location.
𝜕𝜌𝐴
𝛁. 𝐧𝑨 + − 𝑟𝐴 = 0
𝜕𝑡
𝜕𝑐𝐴
𝛁. 𝐍𝑨 + − 𝑅𝐴 = 0
𝜕𝑡
• The terms in blue are already functions of concentration, however the term in red
is not. Therefore, solving the equation requires putting the red term as a function
of concentration.
19
Remember
Relative to Relative to
average velocity stationary axis
✓
? 3. A term that allows the prediction of concentration at any point within diffusion distance.
𝜕𝜌𝐴
𝐯. 𝛁𝜌𝐴 + = 𝐷𝐴𝐵 𝛁2 𝜌𝐴
𝜕𝑡
𝜕𝑐𝐴
𝐯. 𝛁𝑐𝐴 + = 𝐷𝐴𝐵 𝛁2 𝑐𝐴
𝜕𝑡
24
Special Cases of Continuity Equation
Case 3
𝐷𝐴𝐵 = 𝑐𝑜𝑛𝑠𝑡, 𝜌 = 𝑐𝑜𝑛𝑠𝑡 (incompressible fluid), 𝑟𝐴 = 0 and fluid is static (no bulk flow)
𝜕𝜌𝐴
= 𝐷𝐴𝐵 𝛁2 𝜌𝐴
𝜕𝑡
𝜕𝑐𝐴
= 𝐷𝐴𝐵 𝛁2 𝑐𝐴
𝜕𝑡
26
Fick’s Second Law in Coordinate systems
𝜕𝑐𝐴
= 𝐷𝐴𝐵 𝛁2 𝑐𝐴
𝜕𝑡
In rectangular coordinates:
𝜕𝑐𝐴 𝜕 2 𝑐𝐴 𝜕 2 𝑐𝐴 𝜕 2 𝑐𝐴
= 𝐷𝐴𝐵 + +
𝜕𝑡 𝜕𝑥 2 𝜕𝑦 2 𝜕𝑧 2
In cylindrical coordinates:
𝜕𝑐𝐴 𝜕 2 𝑐𝐴 1 𝜕𝑐𝐴 1 𝜕 2 𝑐𝐴 𝜕 2 𝑐𝐴
= 𝐷𝐴𝐵 + + +
𝜕𝑡 𝜕𝑟 2 𝑟 𝜕𝑟 𝑟 2 𝜕𝜃 2 𝜕𝑧 2
In spherical coordinates
2
𝜕𝑐𝐴 1 𝜕 𝜕𝑐𝐴 1 𝜕 𝜕𝑐𝐴 1 𝜕 𝑐𝐴
= 𝐷𝐴𝐵 2 𝑟2 + 2 sin 𝜃 + 2
𝜕𝑡 𝑟 𝜕𝑟 𝜕𝑟 𝑟 sin 𝜃 𝜕𝜃 𝜕𝜃 𝑟 sin 𝜃 𝜕𝜙 2
27
Continuity Equation in Coordinate systems
𝜕𝑐𝐴
+ 𝛁. 𝑵𝑨 = 𝑅𝐴
𝜕𝑡
In rectangular coordinates:
𝜕𝑐𝐴 𝜕𝑁𝐴,𝑥 𝜕𝑁𝐴,𝑦 𝜕𝑁𝐴,𝑧
+ + + = 𝑅𝐴
𝜕𝑡 𝜕𝑥 𝜕𝑦 𝜕𝑧
In cylindrical coordinates:
𝜕𝑐𝐴 1 𝜕 1 𝜕𝑁𝐴,𝜃 𝜕𝑁𝐴,𝑧
+ 𝑟𝑁𝐴,𝑟 + + = 𝑅𝐴
𝜕𝑡 𝑟 𝜕𝑟 𝑟 𝜕𝜃 𝜕𝑧
In spherical coordinates
𝜕𝑐𝐴 1 𝜕 2 1 𝜕 1 𝜕𝑁𝐴,𝜙
+ 2 𝑟 𝑁𝐴,𝑟 + 𝑁 sin 𝜃 + = 𝑅𝐴
𝜕𝑡 𝑟 𝜕𝑟 𝑟 sin 𝜃 𝜕𝜃 𝐴,𝜃 𝑟 sin 𝜃 𝜕𝜙
28
Important Note!
• The equation of continuity is applied to a species
diffusing between two points.
29
What Are the Information Needed
to Solve Such Equations?
30
Solving Partial Differential Equations
• You have to understand your problem well, and to translate your understanding
into equations.
31
Initial and Boundary Conditions
Let’s take a simple example: Let’s take another simple example:
1 1
න 𝑥 2 𝑑𝑥 = න 2
𝑑𝑦 න න 𝑥 2 𝑑𝑥 2 = න න 2 𝑑𝑦 2
𝑦 𝑦
𝑥3 1 𝑥3 1
=− +𝐶 න 𝑑𝑥 = න − + 𝐶1 𝑑𝑦
3 𝑦 3 𝑦
𝐶 is the constant of integration. 𝑥4
= − ln 𝑦 + 𝐶1 𝑦 + 𝐶2
To find the value of 𝐶 we must know a valid 12
condition that satisfies this equation. To find the values of 𝐶1 and 𝐶2 we must know
TWO valid conditions that satisfy this equation.
This equation is called the “Boundary
Condition” (B.C.)
32
How Many I.C.’s and B.C.’s Needed?
𝜕𝑐𝐴
= 𝐷𝐴𝐵 𝛁2 𝑐𝐴
𝜕𝑡
In rectangular coordinates:
𝜕𝑐𝐴 𝜕 2 𝑐𝐴 𝜕 2 𝑐𝐴 𝜕 2 𝑐𝐴
= 𝐷𝐴𝐵 2
+ 2
+
𝜕𝑡 𝜕𝑥 𝜕𝑦 𝜕𝑧 2
33
Types of Boundary Conditions
Type 1
Concentration of transferring species at a boundary
surface is specified
Type 2
A reacting surface boundary is specified
Type 3
Flux of diffusing species is zero
Type 4
Convective mass transfer flux at the boundary is
specified
34
Boundary Conditions
Type 1: Concentration of transferring species A at a boundary surface is
specified.
a) By specifying the concentration at the surface (𝜌𝐴𝑠 , 𝑐𝐴𝑠 , 𝑥𝐴𝑠 , 𝑦𝐴𝑠 , … )
ii. A liquid mixture contacting a pure solid (A) that diffuses in the liquid phase
(such as salt or sugar in water). The concentration of A at the interface is the
solubility limit of A in the liquid 𝑐𝐴𝑠 = 𝑐𝐴∗
35
Boundary Conditions
iii. For gas contacting a liquid mixture where A is present in
both phases. If both species are volatile and the liquid
mixture is ideal, we can apply Raoult’s law:
𝑝𝐴𝑠 = 𝑥𝐴 𝑃𝐴𝑠𝑎𝑡
iv. For gas contacting a liquid mixture where A is present in
both phases. If species A is weakly soluble in the liquid,
we can apply Henry’s law.
𝑝𝐴𝑠 = 𝑥𝐴 𝐻
The same for gas-solid interface:
𝑐𝐴,𝑠𝑜𝑙𝑖𝑑 = 𝑆. 𝑝𝐴
𝑆 is called the partition coefficient or
solubility constant (kmole/m3.Pa)
36
Boundary Conditions
Type 2
A reacting surface boundary is specified: Note the difference
38
Boundary Conditions
Type 3
Flux of diffusing species is zero:
• At boundary of impermeable interface
𝜕𝑐𝐴
𝑁𝐴 ቚ = −𝐷𝐴𝐵 ቤ =0
𝑥=𝐿 𝜕𝑥 𝑥=𝐿
• At axis of symmetry: Rate from either sides is the same
𝜕𝑐𝐴𝑠
ቤ =0
𝜕𝑧 𝑥=0
39
Boundary Conditions
Type 4
The convective mass transfer flux at the boundary
surface is specified
𝑁𝐴 ቚ = 𝑘𝑐 𝑐𝐴𝑠 − 𝑐∞
𝑥=𝐿
40
Steps to Model Problems Involving Molecular Diffusion
1. Sketch your system (you should identify your two BCs clearly on the sketch)
3. Write the differential mole/mass balance equation in proper coordinate system, then simplify
it according to your assumptions (you should apply it for a point located in-between the two
B.C.)
4. Write the definition for NA, then simplify it according to your assumptions.
6. Solve the resulting differential equation with the two boundary conditions (at the end, you will
obtain yA (or cA) and NA as a function of distance)
41
Steps to Model Problems Involving Molecular Diffusion
𝑵𝑨 = −𝐷𝐴𝐵 𝛁𝑐𝐴 + 𝑦𝐴 Σ𝑵𝒊
𝜕𝑐𝐴
𝛁. 𝐍𝑨 + − 𝑅𝐴 = 0
𝜕𝑡
Examples:
• 𝑁𝐴 = −𝑁𝐵
Examples:
• 𝑦𝐴 ≪ 1
• Steady state
• Constant D
• One-dimensional
• Constant T&P
42
Example 1
Microelectronic devices are fabricated by forming many layers of thin films
onto a silicon wafer. Each film has unique chemical and electrical properties.
For example, a thin film of solid silicon (Si) serves as a semiconductor. Silicon
thin films are commonly formed by the chemical vapor deposition, or CVD, of
silane vapor (SiH4) onto the surface of the wafer. The chemical reaction is
𝑆𝑖𝐻4(𝑔) ⟶ 𝑆𝑖(𝑠) + 2𝐻2 (𝑔)
This surface reaction is usually carried out at very low pressure (100 Pa) and
high temperature (900 K). In many CVD reactors, the gas phase over the Si
film is not mixed. Furthermore, at high temperatures, the surface reaction is
very rapid. Consequently, the molecular diffusion of the SiH4 vapor to the
surface often controls the rate of Si film formation. Consider the very
simplified CVD reactor shown in the figure. A mixture of silane and hydrogen
gas flows into the reactor, the feed gas provides silane in high excess relative
to amount consumed in the reaction. A diffuser provides a stagnant gas space
over the growing Si film.
Develop a differential model for the concentration profile of silane in the
stagnant gas phase region, including statements of assumptions and
boundary conditions.
43
List of Assumptions
1. No gas mixing takes place, so mass transfer takes place by molecular
diffusion.
𝜕𝑐𝐴
2. Mass transfer is a steady state process → = 0.
𝜕𝑡
𝜕𝑐𝐴 𝜕𝑐𝐴
3. Flux is one dimensional in z direction → = = 0.
𝜕𝑥 𝜕𝑦
4. Reaction takes place only at the solid surface, no reaction takes place
during diffusion. 𝑅𝐴 = 0
𝑦𝐴 1 + 𝑦𝐴0
𝑵𝐴,𝑧 × 𝑧 = −𝑐𝐷𝐴𝐵 × ln 1 + 𝑦𝐴 𝑦𝐴0 = 𝑐𝐷𝐴𝐵 × ln
1 + 𝑦𝐴
Given that:
𝑐𝐷𝐴𝐵 1 + 𝑦𝐴0
𝑁𝐴,𝑧 = × 𝑙𝑛
𝛿 1 + 𝑦𝐴𝑆
𝑐𝐷𝐴𝐵 1 + 𝑦𝐴0 1 + 𝑦𝐴0
× 𝑙𝑛 × 𝑧 = 𝑐𝐷𝐴𝐵 × ln
𝛿 1 + 𝑦𝐴𝑆 1 + 𝑦𝐴
𝑧 1 + 𝑦𝐴0 1 + 𝑦𝐴0
× 𝑙𝑛 = ln
𝛿 1 + 𝑦𝐴𝑆 1 + 𝑦𝐴
𝒛ൗ
𝟏 + 𝒚𝑨𝑺 𝜹
𝒚𝑨 = 𝒛ൗ −𝟏
−𝟏
𝟏 + 𝒚𝑨𝟎 𝜹
𝒛ൗ
𝟏 + 𝒚𝑨𝑺 𝜹
𝒚𝑨 = 𝟏 + 𝒚𝑨𝟎 −𝟏
𝟏 + 𝒚𝑨𝟎 46
Solving without Using Integration Limits
𝑑𝑦𝐴 To get the expression of 𝑁𝐴 , apply BC2:
𝑵𝐴,𝑧 න 𝑑𝑧 = න −𝑐𝐷𝐴𝐵
Boundary Conditions: 1 + 𝑦𝐴
at 𝑧 = 𝛿, 𝑦𝐴𝑠 = 0
T and P are kept constant, so 𝑐 and 𝐷𝐴𝐵 are constants 1 + 𝑦𝐴0
1. At 𝑧 = 0, 𝑦𝐴 = 𝑦𝐴0
𝑁𝐴,𝑧 × 𝛿 = 𝑐𝐷𝐴𝐵 × 𝑙𝑛
1 + 𝑦𝐴𝑠
𝑵𝐴,𝑧 × 𝑧 = −𝑐𝐷𝐴𝐵 × ln 1 + 𝑦𝐴 + 𝐶1
𝑦𝐴 0 = 𝑦𝐴0 𝒄𝑫𝑨𝑩 𝟏 + 𝒚𝑨𝟎
𝑵𝑨,𝒛 = × 𝒍𝒏
𝜹 𝟏 + 𝒚𝑨𝒔
Given the boundary condition: at 𝑧 = 0, 𝑦𝐴 = 𝑦𝐴0
2. At 𝑧 = 𝛿, 𝑦𝐴𝑠 = 0 Combining both expressions:
𝐶1 = 𝑐𝐷𝐴𝐵 × ln 1 + 𝑦𝐴0
𝑦𝐴 𝛿 = 𝑦𝐴𝑠 = 0
𝒄𝑫𝑨𝑩 𝟏 + 𝒚𝑨𝟎 𝟏 + 𝒚𝑨𝟎
By substitution: × 𝒍𝒏 × 𝒛 = 𝒄𝑫𝑨𝑩 × 𝒍𝒏
𝜹 𝟏 + 𝒚𝑨𝒔 𝟏 + 𝒚𝑨
𝑵𝐴,𝑧 × 𝑧 = −𝑐𝐷𝐴𝐵 × ln 1 + 𝑦𝐴 + 𝑐𝐷𝐴𝐵 × ln 1 + 𝑦𝐴0
𝒛ൗ
𝟏 + 𝒚𝑨𝑺 𝜹
𝟏 + 𝒚𝑨𝟎 𝒚𝑨 = −𝟏
𝑵𝑨,𝒛 × 𝒛 = 𝒄𝑫𝑨𝑩 × 𝒍𝒏 𝒛ൗ −𝟏
𝟏 + 𝒚𝑨 𝟏 + 𝒚𝑨𝟎 𝜹
47
Example 2
Chemical vapor deposition process (CVD) of thin films of micrometer thickness on silicon wafers used in
the manufacture of microelectronic devices are often carried out in a diffusion furnace.
Within the diffusion furnace, the silicon wafers, typically thin disks of crystalline silicon 15–20 cm
diameter, are vertically stacked on a support tray, as shown in the figure. The reactant gas is introduced
into the enclosed furnace highly diluted with helium gas, which is maintained at high temperature to
promote rates of diffusion and reaction, and often at low pressure, depending upon the process
chemistry.
The flowing feed gas concentration is considered constant in the gas region surrounding the stacked
wafers. However, in the stagnant gas space between the wafers (interwafer region of distance L), the
reactant and product gases diffuse to and from the wafer surface, creating a concentration profile in two
dimensions. Consequently, there is a constant source and sink for the gaseous reactants.
One particular surface reaction process for deposition of a solid SiO2 thin film is the decomposition of the
gas-phase reactant Tetraethyl orthosilicate (TEOS) in the presence of helium as a diluent in large excess.
𝑆𝑖 𝑂𝐶2 𝐻5 4 𝑔 ⟶ 4𝐶2 𝐻4 𝑔 + 2𝐻2 𝑂 𝑔 + 𝑆𝑖𝑂2 𝑠
The reaction takes place uniformly on the Si wafer surface so that the concentration of TEOS is constant.
Develop a differential model for the diffusion of TEOS in the interwafer region, including statements of
assumptions and boundary conditions.
48
List of Assumptions
- For simplicity, we give symbols to the components involved in the process:
- 𝐴: 𝑆𝑖 𝑂𝐶2 𝐻5 4 - 𝐵: 𝐻𝑒𝑙𝑖𝑢𝑚 - 𝐶: 𝐶2 𝐻4
- 𝐷: 𝐻2 𝑂 - 𝐸: 𝑆𝑖𝑂2
The reaction becomes: 𝐴 → 4𝐶 + 2𝐷 + 𝐸
- Constant Temperature and Pressure, i.e. constant Diffusivity.
- Reaction takes place only on the wafer surface, i.e. no reaction in the diffusing distance.
- Helium is present in large excess
- 𝑦𝐴 ≪ 1
- 𝐷𝐴−𝑚𝑖𝑥 ≅ 𝐷𝐴𝐵
- There is a constant source and sink for the gaseous reactants, i.e. steady state 𝜕𝑦𝐴 Τ𝜕𝑡 = 0
- Flux is two dimensional for species A, i.e. the independent space variables are r and z only
and 𝜕𝑦𝐴 Τ𝜕𝜃 = 0
49
Diffusional Equation
Similarly
𝜕𝑐𝐴 1𝜕 1 𝜕𝑁𝐴,𝜃 𝜕𝑁𝐴,𝑧 𝜕𝑐𝐴
+ 𝑟𝑁𝐴,𝑟 + + = 𝑅𝐴 𝑁𝐴,𝑟 = −𝐷𝐴𝐵
𝜕𝑡 𝑟 𝜕𝑟 𝑟 𝜕𝜃 𝜕𝑧 𝜕𝑟
By substituting in D.E.
𝟏 𝝏 𝝏𝑵𝑨,𝒛 1𝜕 𝜕𝑐𝐴 𝜕 𝜕𝑐𝐴
𝒓𝑵𝑨,𝒓 + =𝟎 − 𝑟𝐷𝐴𝐵 − 𝐷 =0
𝒓 𝝏𝒓 𝝏𝒛 𝑟 𝜕𝑟 𝜕𝑟 𝜕𝑧 𝐴𝐵 𝜕𝑧
50
Boundary Conditions
• With respect to r:
𝑎𝑡 𝑟 = 𝑅 𝐶𝐴 𝑅, 𝑧 = 𝐶𝐴𝑜
• With respect to z:
𝑎𝑡 𝑧 = 0 𝐶𝐴 𝑟, 0 = 𝐶𝐴𝑠
𝐿 𝐿
𝐿 𝜕𝐶𝐴 𝑟, 𝜕𝐶𝐴 𝑟,
2 2
𝑎𝑡 𝑧 = 𝑁𝐴,𝑧 = −𝐷 =0 → =0
2 𝜕𝑧 𝜕𝑧
51
Concentration Distribution
52
End of Chapter 23
53