SM4303PSK ®

P-Channel Enhancement Mode MOSFET

Features Pin Description

· -30V/-17.6A, D
D
RDS(ON) =9mW(max.) @ VGS =-10V D
D
RDS(ON) =15mW(max.) @ VGS =-4.5V
· Reliable and Rugged S
S
· Lead Free and Green Devices Available S
G
(RoHS Compliant)
Top View of SOP-8
· HBM ESD protection level pass 8KV
( 5,6,7,8 )
D D DD
Note : The diode connected between the gate and
source serves only as protection against ESD. No
gate overvoltage rating is implied.

(4)
G

Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered S S S
(1, 2, 3)
Systems.
P-Channel MOSFET
Ordering and Marking Information
SM4303PS Package Code
K : SOP-8
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel (2500pcs/reel)
Package Code Assembly Material
G : Halogen and Lead Free Device
4303
SM4303PS K : XXXXX - Lot Code
XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ã Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.2 - March, 2014
SM4303PSK ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage -30
V
VGSS Gate-Source Voltage ±25
TA=25°C -17.6
IDa Continuous Drain Current (VGS=-10V)
TA=70°C -14
a
IDM 300ms Pulsed Drain Current (V GS=-10V) -70 A
a
IS Diode Continuous Forward Current -4
b
I AS Avalanche Current, Single pulse L=0.1mH 38
b
EAS Avalanche Energy, Single pulse L=0.1mH 72 mJ
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 4.2
P Da Maximum Power Dissipation W
TA=70°C 2.7
t £ 10s 30
RqJAa,c Thermal Resistance-Junction to Ambient
Steady State 75 °C/W
R qJL Thermal Resistance-Junction to Lead Steady State 24
2
Note a：Surface Mounted on 1in pad area, t £ 10sec.
Note b：UIS tested and pulse width limited by maximum junction temperature 150o C (initial temperature Tj=25 oC).
Note c：Maximum under Steady State conditions is 75 °C/W.

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -30 - - V
VDS=-24V, VGS=0V - - -1
IDSS Zero Gate Voltage Drain Current mA
TJ=85°C - - -30
V GS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -1.3 -1.8 -2.3 V
IGSS Gate Leakage Current VGS=±20V, V DS=0V - - ±10 mA
VGS=-10V, IDS=-17.6A - 7 9
RDS(ON) d Drain-Source On-state Resistance mW
VGS=-4.5V, IDS=-10A - 11 15
Diode Characteristics
VSD d Diode Forward Voltage ISD=-1A, V GS=0V - -0.7 -1 V
e
trr Reverse Recovery Time ISD=-17.6A, - 24 - ns
Qrr
e
Reverse Recovery Charge di SD/dt=100A/ms - 16 - nC

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Rev. A.2 - March, 2014
SM4303PSK ®

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

e
Dynamic Characteristics
Rg Gate Resistance VGS =0V, VDS =0V,F=1MHz - 8 - W
C iss Input Capacitance - 2110 -
VGS =0V,
Coss Output Capacitance VDS=-15V, - 450 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 330 -
t d(ON) Turn-on Delay Time - 12 -
tr Turn-on Rise Time VDD=-15V, RL=15W, - 14 -
IDS=-1A, VGEN=-10V, ns
td(OFF) Turn-off Delay Time RG=6W - 98 -
tf Turn-off Fall Time - 60 -
e
Gate Charge Characteristics
Qg Total Gate Charge - 45 -
VDS=-15V, VGS=-10V,
Qgs Gate-Source Charge - 5 - nC
IDS=-17.6A
Qgd Gate-Drain Charge - 12.7 -
Note d：Pulse test ; pulse width£300ms, duty cycle£2%.
Note e：Guaranteed by design, not subject to production testing.

Copyright ã Sinopower Semiconductor, Inc. 3 www.sinopowersemi.com

Rev. A.2 - March, 2014
SM4303PSK ®

Typical Operating Characteristics

Power Dissipation Drain Current

5 20

4 16

-ID - Drain Current (A)

Ptot - Power (W)

3 12

2 8

1 4

o
TA=25 C
o
TA=25 C,V G=-10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

300 2
Normalized Transient Thermal Resistance

1 Duty = 0.5
100
0.2
it
m
Li
n)

0.1
(o
ds
-ID - Drain Current (A)

10 300ms
R

0.05
1ms 0.1
0.02
10ms 0.01
1
100ms

1s 0.01 Single Pulse

DC
0.1

2
Mounted on 1in pad
o o
TA=25 C RqJA : 30 C/W
0.01 1E-3
0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 60

-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright ã Sinopower Semiconductor, Inc. 4 www.sinopowersemi.com

Rev. A.2 - March, 2014
SM4303PSK ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

70 21

60 VGS=-4.5,-5,-6,-7,-8,-9,-10V 18

RDS(ON) - On - Resistance (mW)

50 15
-4V VGS=-4.5V
-ID - Drain Current (A)

40 12

30 9
VGS=-10V

20 -3.5V 6

10 3
-3V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70

-VDS - Drain-Source Voltage (V) -ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

35 1.6
IDS=-17.6A IDS=-250mA

30 1.4
Normalized Threshold Voltage
RDS(ON) - On Resistance (mW)

25 1.2

20 1.0

15 0.8

10 0.6

5 0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright ã Sinopower Semiconductor, Inc. 5 www.sinopowersemi.com

Rev. A.2 - March, 2014
SM4303PSK ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

1.8 70
VGS = -10V
1.6 IDS = -17.6A
Normalized On Resistance

-IS - Source Current (A)

1.4 10 o
T j=150 C

1.2
o
Tj=25 C
1.0
1
0.8

0.6
o
RON@Tj=25 C: 7mW
0.4 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

3200 10
Frequency=1MHz VDS=-15V
2800 9 I =-17.6A
DS

8
-VGS - Gate - source Voltage (V)

2400
7
C - Capacitance (pF)

Ciss
2000
6

1600 5

1200 4

3
800
Coss 2
400 Crss
1

0 0
0 5 10 15 20 25 30 0 9 18 27 36 45

-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright ã Sinopower Semiconductor, Inc. 6 www.sinopowersemi.com

Rev. A.2 - March, 2014
SM4303PSK ®

Avalanche Test Circuit and Waveforms

VDS tAV
L

DUT EAS
VDD
RG
VDD
tp IAS
IL
VDS
0.01W
tp VDSX(SUS)

Switching Time Test Circuit and Waveforms

VDS
RD
td(on) tr td(off) tf
DUT
VGS
VGS 10%
RG
VDD
tp

90%
VDS

Copyright ã Sinopower Semiconductor, Inc. 7 www.sinopowersemi.com

Rev. A.2 - March, 2014
SM4303PSK ®

Package Information
SOP-8

-T- SEATING PLANE < 4 mils

D

SEE VIEW A
E1

°
h X 45

e b c
A2

0.25
A

GAUGE PLANE
SEATING PLANE
A1

L
VIEW A

S
Y
SOP-8 RECOMMENDED LAND PATTERN
M MILLIMETERS INCHES 1.27
B
O
L MIN. MAX. MIN. MAX.
A - 1.75 - 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 - 0.049 -
2.2
b 0.31 0.51 0.012 0.020
c 0.17 0.25 0.007 0.010
D 4.80 5.00 0.189 0.197 5.74
E 5.80 6.20 0.228 0.244
E1 3.80 4.00 0.150 0.157 2.87
e 1.27 BSC 0.050 BSC
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050 0.8
0 0° 8° 0° 8° 0.635
UNIT: mm
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

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Rev. A.2 - March, 2014
SM4303PSK ®

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 A
OD1 B
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
330.0± 12.4+2.00 13.0+0.50
2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0
4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20
-0.00 -0.40
(mm)

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Rev. A.2 - March, 2014
SM4303PSK ®

Taping Direction Information

SOP-8

USER DIRECTION OF FEED

Classification Profile

Copyright ã Sinopower Semiconductor, Inc. 10 www.sinopowersemi.com

Rev. A.2 - March, 2014
SM4303PSK ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.2 - March, 2014