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Pvsyst Trial Pvsyst Trial Pvsyst Trial Pvsyst Trial Pvsyst Trial
PVsyst TRIAL
Manufacturer
Model
Module size (W x L)
Number of cells
Generic
AXIprotect X HC MT BLK AC-335MG/120V
Technology
Rough module area (Amodule)
Sensitive area (cells) (Acells)
Prod. Since 2020
Manufacturer 2020
Si-mono
1.72 m²
1.53 m²
PVsyst TRIAL
Shunt resistance (Rshunt) 1200 Ω Diode saturation current (IoRef) 0.014 nA
Serie resistance (Rserie) 0.19 Ω Voc temp. coefficient (MuVoc) -132 mV/°C
Specified Pmax temper. coeff. (muPMaxR) -0.39 %/°C Diode quality factor (Gamma) 0.96
Diode factor temper. coeff. (muGamma) -0.001 1/°C
Reverse Bias Parameters, for use in behaviour of PV arrays under partial shadings or mismatch
Reverse characteristics (dark) (BRev) 3.20 mA/V² (quadratic factor (per cell))
Number of by-pass diodes per module 3 Direct voltage of by-pass diodes -0.7 V
Model results for standard conditions (STC: T=25 °C, G=1000 W/m², AM=1.5)
Max. power point voltage (Vmpp) 34.1 V Max. power point current (Impp) 9.87 A
Maximum power (Pmpp) 335.4 Wp Power temper. coefficient (muPmpp) -0.39 %/°C
Efficiency(/ Module area) (Eff_mod) 19.5 % Fill factor (FF) 0.800
Efficiency(/ Cells area) (Eff_cells) 21.9 %
PVsyst TRIAL
PVsyst TRIAL
PVsyst TRIAL
27/03/23 PVsyst Evaluation mode Page 1/1