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Microwave Solidsate Devices and Microstrip Line
Microwave Solidsate Devices and Microstrip Line
Microwave Solidsate Devices and Microstrip Line
Dr.G.Venkat Babu
ECE/SEEE
UNIT III
MICROWAVE SOLID STATE
DEVICES AND STRIP LINES
•Transferred Electron Devices (TED)
•Gunn diode- working
•Modes
•IMPATT
•TRAPATT
•Microstrip lines- Characteristic impedance, losses, quality factor
•Parallel strip lines- Characteristic impedance
•Attenuation losses
•Coplanar strip line
•Shielded strip lines
Problems
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 2
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 3
Transferred Electron Devices (TED)
⚫ TED’s are semiconductor devices with no
junctions and gates.
⚫ e = Electron charge
⚫ μ = Electron mobility
⚫ = Electron density in the lower valley
⚫ = Electron density in the upper valley
⚫ is the electron density
* 32
⚫ There are three domain modes for Gunn
oscillation modes.
1. Transit time domain mode, (Gunn mode)
* 33
2. Delayed domain mode
* 34
3. Quenched domain mode:
* 35
⚫ Limited Space charge Accumulation Mode
(LSA)
* 36
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 37
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 39
Applications of Gunn Diode
⚫ In radar transmitters
⚫ Air traffic control (ATC) and Industrial
Telemetry
⚫ Broadband linear amplifier
⚫ Fast combinational and sequential logic
circuit
⚫ Low and medium power oscillators in
microwave receivers
⚫ As pump sources
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 40
Avalanche transit time devices
* 41
Principle of operation
⦿ Negative resistance is achieved by creating a
delay (1800 Phase shift) between the voltage and
current.
⦿ Delay is achieved by,
◼ Delay in generating the avalanche current
multiplication
◼ Delay due to transit time through the material
⦿ So called Avalanche transit time (ATT)
devices
⦿ Avalanche is generated by Carrier impact
ionization
⦿ TT is due to the drift in the high field domain
* 42
Features
⚫ Presence of P-N junctions
⚫ Diode is reverse biased
⚫ High field (potential gradient) is applied of
the order 400 KV/cm
Two modes of ATT
◦ IMPATT- Impact ionization ATT (Efficiency
5-10%)
◦ TRAPATT- Trapped plasma ATT (Efficiency
20-60%)
* 43
IMPATT
* 46
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 47
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 48
* 50
APPLICATIONS
Intruder alarms
Basic forms of radar
General detectors using RF technology
* 51
Power Efficiency
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 58