Exercise 3 (ar cer conner) 1, Aabsolue zero temperature, pute sicon behaves as erent lnsator Cnet) 4. emtnsicsomienducor 2 man tnse semiconductor, tan ordinary temperature, the correct relation between re number sf letrons per unit volume n, and number st oe perunt volume ny, (Goa AN BMD mem dnemce 8 When a small amount of impurity atoms are added toa ‘amiconducor, then goneraly tesa goay) 1 may crease or decreaee depending vpn the percentage of doping oases 6, craze ‘cous not change 4 Incase of pon junction dod, tho wath o depletion ‘ogonls or) 4 decested wih hoa doping ®nreased by rover biasing €.doreased wth ight doping {increased by onward basing 5 With forward based mode, the pn junction dod ‘201, ‘is oe In which wth of dpltion yer nreases ‘sone in whch potent baer creases eis as cased seh ets as open sch 6 Inantype semiconductor, whieh of he following Stloment Is re? cory 4 Becvons are majoty carers and valent atoms are separ, econ are minority carers and petavalet atoms are copant, © Holes are minority carers and pontavaent toms ae pas Holes are majority carers and valent atoms aro pats 7 10 R 2 Jas prjuncton, diode dept layer —" or 1 rans ». nresen meme a Cand The Qn layer in a p-njunction diode is 1 mie anise pte so hon be nner Scr ld inne dpieton regions (208) eto Ve™ b.s107 ©5108 Vr a.sto"var" “Tho major arts of cutent ina ptype amiconductor wil bo (2003) nmtora ». protons oeciore fee Ina ptype semiconductor, germanium i doped vith 2 gam ». boron © aluminum 4, Alt hese The process of ang impurities othe pure semiconductor sealed 2 gous 1. drooping coping 4. Nene the above The depletion layer In pn junetion region is causod by (2002) (2002) (2001) 2. migration of impurtyin © cision of charge carers 4. drtot eles Semiconductor is damaged by the strong current inte ey 2. lack of fee electron J 1. excoes of election ©, excess ot proton 1. None ofthe above ‘Scanned with CamSeannerSemiconductors 10 Band gap of silicon is E g (Si), of germanium is E, (Ge) and of carbon is E,(C). The correct order of band gap is a. E, (Si) E, (Ge) <, (C) c. F, (Si) < E, (Ge) < E, (C) d. F, (Si) > E, (Ge) > E, (C) 7 : ‘Scanned with CamSeanner12 Letn, and n, be the number of holes and conduction electrons respectively in a semiconductor. Then, a. n, >n, in an intrinsic semiconductor, | 1, +1. Cc. Np =n, in an intrinsic semiconductor, | = 1, +/, d. n, >n, in an intrinsic semiconductor, | = 0 (Here, |, =Current due to holes movement, /,= current a due to electrons movement, | = total current), an ‘Scanned with CamSeanner13 When n-type or p-type impurities are added to copper, then a. conductivity increases b. conductivity does not increase C. conductivity becomes zero d. None of the above ae ~ wnat foam ‘Scanned with CamSeanner14 The temperature of germanium is decreased from room temperature to 100 K, the resistance of germanium a. decreases b. increases c. remains unaffected d. depends on external conditi jons 1 ataatean (n Vand ‘Scanned with CamSeanner24 The forward biased diode connection is a 124) b -2V b -3V p -3V c. 2Vv » www