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I. Oxidation Process: Hyungjin Kim EE, Inha University (Hkim@inha - Ac.kr)
I. Oxidation Process: Hyungjin Kim EE, Inha University (Hkim@inha - Ac.kr)
Oxidation Process
Hyungjin Kim
EE, Inha University
(hkim@inha.ac.kr)
1) T < 200 ℃ :
100
2a
111
<Steam oxidation(STH)>
F3 = KsCi
Ks : surface reaction speed
Ks X o
C * (1 + )C *
Ci = Co = D
K X,
K 1+
Ks Ks X o
+
------ Eq. (1-4)
1+ s + s o h D
h D
D = f (O2, T, … )
X i + AX i
2
where = , X i = X 0 (0)
B
2 DC *
A = 2 D(1 K s + 1 h) , B =
N
Xo t + 1
Eq. (1-7) = 1 + 2 2
−1
A2 A 4 B
X o = Bt , B : parabolic growthconstant
2
2) t + << A2/4B
B B
Xo = (t + ) , : linear growth constant
A A
Integrated Circuit Fabrication Process Hyungjin Kim 13
Integrated Circuit Fabrication Process Hyungjin Kim 14
2) comparison of experimental data
•
• Ea (dry)=28.5 kcal/mol
• ~ Ea (O2 in quartz)=27 kcal/mol
• Ea (wet)=16.3 kcal/mol
• ~ Ea (H2O in quartz)=18.3 kcal/mol
•
<Parabolic growth constant and activation energy>
Ea (wet) = 46.0 kcal/mol
≈ Si-Si bonding energy
→ depends on Ks
impurity conc. in Si
1) segregation coefficient (m) = impurity conc. in SiO2
• orientation
• wet oxidation
• dry oxidation
• doping concentration
C(P) > 11020 atoms/cm3
→ large G for low temp. wet oxidation
→ large Ks due to silicon structure change
oxide thickness:
0.2 mm
2) passivation layer
4) doping source
6) field oxide
2) C-V curve
Cox C Si
CoxCSi ox Si 2 Sis
Cmin = Cox = , CSi = , Xd =
Cox + CSi Tox Xd qN a
• temperature : 250∼350 ℃
• electric field < oxide breakdown field (1∼10 MV/cm)
• time : 5 minutes
[charges/cm2]
☞ minimizing Qm : gettering
(charges/cm2)
☞ Summary
In order to reduce interface charges;
• prevent contamination
• avoid radiation exposure
• anneal under N2/H2 atmosphere
Integrated Circuit Fabrication Process Hyungjin Kim 45