DTC115EM / DTC115EE / DTC115EUA

Transistors DTC115EKA / DTC115ESA

Digital transistors (built-in resistors)

DTC115EM / DTC115EE / DTC115EUA
DTC115EKA / DTC115ESA

!Features !Equivalent circuit

1) Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see the equivalent IN
R1 OUT

circuit). R2
2) The bias resistors consist of thin-film resistors with complete GND
isolation to allow negative biasing of the input, and parasitic
IN OUT
effects are almost completely eliminated. GND
3) Only the on/off conditions need to be set for operation, making
device design easy.
4) Higher mounting densities can be achieved.

!Structure
NPN digital transistor (with built-in resistors)

!External dimensions (Units : mm)

DTC115EM DTC115EE 1.6±0.2
1.2 1.0±0.1
0.2 0.8 0.2
0.5 0.5 0.7±0.1
+0.1 +0.1
0.2−0.05
0.2−0.05
0.32

0.4 0.4

0.55±0.1
1.2

0.8

(2)
(3)
(1)
(1) (2)
0.22

0.8±0.1

1.6±0.2
0.5

0~0.1
0.13
0~0.1

0.15Max. (3)
(1) IN (1) GND
0.1Min.

(2) GND +0.1

0.3 −0.05
ROHM : VMT3 ROHM : EMT3 0.15±0.05 (2) IN
(3) OUT (3) OUT
Abbreviated symbol : 29
Abbreviated symbol : 29

DTC115EUA 2.0±0.2 DTC115EKA 2.9±0.2

1.1+0.2
1.3±0.1 0.9±0.1 1.9±0.2 −0.1
0.65 0.65 0.2 0.7±0.1 0.95 0.95 0.8±0.1
(1) (2)
(1) (2)
1.25±0.1

2.1±0.1

0~0.1
2.8±0.2
−0.1
1.6+0.2

0~0.1

(3)
(3)
0.1Min.

0.3+0.1
−0 0.15±0.05 +0.1
0.3Min.

(1) GND 0.15 −0.06 (1) GND

All terminals have same dimensions 0.4 +0.1
ROHM : UMT3 (2) IN −0.05
ROHM : SMT3 (2) IN
EIAJ : SC-70 (3) OUT EIAJ : SC-59 All terminals have same dimensions
(3) OUT
Abbreviated symbol : 29
Abbreviated symbol : 29

DTC115ESA 4±0.2 2±0.2

3±0.2

3Min.
(15Min.)

0.45+0.15
−0.05

2.5 +0.4
−0.1 0.5 0.45 + 0.15
−0.05
5
(1) GND
ROHM : SPT (2) OUT
EIAJ : SC-72 (1) (2) (3)
(3) IN
 DTC115EM / DTC115EE / DTC115EUA
Transistors DTC115EKA / DTC115ESA
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VI −10~+40 V
IO 20
Output current mA
IC(Max.) 100
DTC115EM / DTC115EE 150
Power DTC115EUA / DTC115EKA Pd 200 mW
dissipation
DTC115ESA 300
Junction temperature Tj 150 °C
Storage temperature Tstg −55~+150 °C

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
VI(off) − − 0.5 VCC=5V, IO=100µA
Input voltage V
VI(on) 3 − − VO=0.3V, IO=1mA
Output voltage VO(on) − 0.1 0.3 V IO=5mA, II=0.25mA
Input current II − − 0.15 mA VI=5V
Output current IO(off) − − 0.5 µA VCC=50V, VI=0V
DC current gain GI 82 − − − IO=5mA, VO=5V
Input resistance R1 70 100 130 kΩ −
Resistance ratio R2/R1 0.8 1 1.2 − −
Transition frequency fT − 250 − MHz VCE=10V, IE=−5mA, f=100MHz ∗
∗Transition frequency of the device.

!Package, marking, and packaging specifications

Type DTC115EM DTC115EE DTC115EUA DTC115EKA DTC115ESA
Package VMT3 EMT3 UMT3 SMT3 SPT
Marking 29 29 29 29 −
Packaging code T2L TL T106 T146 TP
Basic ordering unit (pieces) 8000 3000 3000 3000 5000