EE 312

Experiment 5

N CNANNEL ENHANCEMENT
MOSFET
TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGINEERING.
What is a Transistor in General?
Three-terminal electronic device.
Allows the voltage between two of its terminals
to control the current flowing into the third terminal.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

History
MOSFET Stands for Metal Oxide Semiconductor Field Effect Transistor
It was invented by Mohamed Atalla (mech. engineer and self-taught physical
chemist) and Dawon Kahng (elect. engineer) at Bell Labs in 1959.
It is the most common type amongst semiconductor devices used today.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Types of MOSFETs
MOSFET

P Channel N Channel
(PMOS Transistor) (NMOS Transistor)

Depletion Enhancement Depletion Enhancement

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Enhancement and Depletion
Enhancement type MOSFET (Normally OFF):
It does NOT have a conducting channel to start with. A
channel can be induced by applying a VGS of appropriate
magnitude and polarity.

Depletion type MOSFET (Normally ON):

It does have a conducting channel to start with. The channel
can be enhanced or depleted by controlling VGS.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

E-NMOS Structure and Symbol
•It has four terminals: Gate, Drain, Source and Body.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

What is Meant By Field Effect?
For an Enhancement type MOSFET there is no conducting
path between the drain and the source.

A perpendicular electric field (by applying VGS ) is used to

invert the type of carriers in the substrate beneath the oxide
to make them compatible with the majority carriers in the
drain and source.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

 Turning ON an E-MOSFET
The Threshold Voltage Vt
A minimum positive gate-to-source voltage
VGS is needed to invert the region beneath
the oxide from p-type to n-type.
For VGS ≥ Vt,
 an induced channel due to strong
inversion exists.Vt  threshold voltage.
For VGS <Vt
 no channel is induced and the device is said
to be cutoff (ID = 0).

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Increasing vDS While Fixing vGS > Vt

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Channel-Length Modulation
ro, λ and VA

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

 i-v Characteristics
for Common Elements Encountered in Linear Circuits

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Voltage-Controlled Current Source and
Resistance
I-V Characteristic Curves for a Voltage Controlled I-V Characteristic Curves for a Voltage Controlled
Resistance (Crucial for a Controlled Switch) Current Source (Crucial for an Amplifier)

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

 The Triode and Saturation Modes (E-NMOS)
The over-drive voltage is defined as
VOV ≡ VGS – Vt
If VDS < VOV , the device operates in the
triode region, where it acts as a voltage-
controlled resistance. VOV controls the slope
and its inverse, i.e., rDS.
If If VDS ≥ VOV , the device operates in the
saturation region, where it acts as a voltage-
controlled current source, VCCS.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Summary of Modes of Operation and Relevant Applications
(1/2)

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

 Summary of Modes of Operation and Relevant Applications
(2/2)
•If vGS < Vt , the device is said to be cutoff.
•If vGS > Vt , the device could be either in triode or in saturation,
depending on the value of vDS compared to the gate-to-source overdrive
voltage vOV  vGS ‒Vt.
•In the triode and cutoff modes of operation, the MOS transistor is used
mainly as an voltage-controlled electronic switch, which is very
important for logic gates.
•In the saturation mode, and for sufficiently small signals, the MOS
transistor acts as a linear voltage-controlled current source, and
consequently can be used as an electronic amplifier.
TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.
 Switching Parameter: rDS (RDS(ON))
In the triode region, the MOS transistor
acts as a voltage-controlled resistance.
Its closure resistance rDS is defined as

Δ𝑣𝐷𝑆 1
𝑟𝐷𝑆 ≡ =
Δ𝑖𝐷 ′ 𝑊
𝑘𝑛 𝑉𝑂𝑉
𝐿
For switching applications, e.g. logic gates,
rDS needs to be minimum for a closed
switch  increase W/L or VOV.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Which Voltage Affects iD The Most in Sat.?
Note that 𝑖𝐷 is strongly controlled by
𝑣𝐺𝑆 and weakly by 𝑣𝐷𝑆 in the saturation
mode, where it is given by:

𝑘𝑛′ 𝑊 2
𝑖𝐷 = 𝑣 − 𝑉𝑡 1 + 𝜆𝑣𝐷𝑆
2 𝐿 𝐺𝑆

If 𝜆 ≈ 0  (1 + 𝜆𝑣𝐷𝑆 ) → 1

𝑘𝑛′ 𝑊 2
𝑖𝐷 = 𝑣𝐺𝑆 − 𝑉𝑡
2 𝐿

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Linearizing the MOSFET Operation by
Maintaining Small 𝑣𝑔𝑠 !

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

The Small Signal Approximate Model

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Small Signal Parameters: gm , 𝑟𝑜
The transconductance gm quantifies
how much-in the saturation region- the
drain current changes for a small
change in vGS.
Caused by the channel-length
modulation, the weak dependence of Δ𝑖𝐷 2𝐼𝐷
iD on vDS in the saturation region  at a 𝑔𝑚 ≡ =
given vGS  is linear and can be Δ𝑣𝐺𝑆 𝑉𝐺𝑆 − 𝑉𝑡
modeled by ro between the drain and
the source. Δ𝑣𝐷𝑆 1
𝑟𝑜 ≡ =
Δ𝑖𝐷 𝜆𝐼𝐷

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Which MOSFET Has a Greater Value of gm?

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

IRF 620 MOSFET Datasheet

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Experimental Setup for Measuring the
Threshold Voltage Vt
Increase VDD until VRD = 250 mV,
then measure VGS.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

Our Circuit With Multimeters Connected

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Setup for Measuring the iD-vDS Characteristics

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.

TURKI ALMADHI, LECTURER, DEPT. OF ELECT ENGG.