Ultrafast Soft Recovery Rectifier Diode: Product Benefits Product Features Product Applications

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600V

15A
APT15D60K
APT15D60KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K)

PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS


• Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses
-Switchmode Power Supply
-Inverters • Soft Recovery Characteristics • Low Noise Switching
• Free Wheeling Diode 1
-Motor Controllers • Popular TO-220 Package or • Cooler Operation 2

-Converters Surface Mount D2 PAK Pack-


-Inverters age • Higher Reliability Systems
• Low Forward Voltage 1 2
• Snubber Diode
• Increased System Power
• PFC • Low Leakage Current Density

1 - Cathode
2 - Anode
Back of Case - Cathode

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.


Symbol Characteristic / Test Conditions APT15D60K(G) UNIT

VR Maximum D.C. Reverse Voltage

VRRM Maximum Peak Repetitive Reverse Voltage 600 Volts

VRWM Maximum Working Peak Reverse Voltage


IF(AV) Maximum Average Forward Current (TC = 133°C, Duty Cycle = 0.5) 15
IF(RMS) RMS Forward Current (Square wave, 50% duty) 32 Amps
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 110
TJ,TSTG Operating and StorageTemperature Range -55 to 175
°C
TL Lead Temperature for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS


Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

IF = 15A 1.6 1.8


VF Forward Voltage IF = 30A 1.9 Volts

IF = 15A, TJ = 125°C 1.4


VR = VR Rated 250
IRM Maximum Reverse Leakage Current µA
VR = VR Rated, TJ = 125°C 500
053-6010 Rev M 7-2015

CT Junction Capacitance, VR = 200V 23 pF

Microsemi Website - http://www.microsemi.com


DYNAMIC CHARACTERISTICS APT15D60K(G)
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
trr Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 21
ns
trr Reverse Recovery Time - 80
Qrr IF = 15A, diF/dt = -200A/µs
Reverse Recovery Charge - 95 nC
VR = 400V, TC = 25°C
IRRM Maximum Reverse Recovery Current - 3 - Amps
trr Reverse Recovery Time - 150 ns
Qrr IF = 15A, diF/dt = -200A/µs
Reverse Recovery Charge - 520 nC
VR = 400V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 7 - Amps
trr Reverse Recovery Time - 60 ns
IF = 15A, diF/dt = -1000A/µs
Qrr Reverse Recovery Charge - 810 nC
VR = 400V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 22 Amps

THERMAL AND MECHANICAL CHARACTERISTICS


Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

RθJC Junction-to-Case Thermal Resistance 1.35


°C/W
RθJA Junction-to-Ambient Thermal Resistance 80
0.07 oz
WT Package Weight
1.9 g

10 lb•in
Torque Maximum Mounting Torque
1.1 N•m

Microsemi Reserves the right to change, without notice, the specifications and information contained herein.

1.40

0.9
Z JC, THERMAL IMPEDANCE (°C/W)

1.20

1.00 0.7

0.80
0.5
Note:
0.60
t1
P DM

0.3
0.40 t2

t
Duty Factor D = 1 /t2
0.20 0.1
θ

Peak T J = P DM x Z θJC + T C
SINGLE PULSE
0.05
0
10 -5
10 -4
10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
053-6010 Rev M 7-2015
TYPICAL PERFORMANCE CURVES APT15D60K(G)
60 180
T = 125°C
J
V = 400V

trr, REVERSE RECOVERY TIME


160 R

50 30A
IF, FORWARD CURRENT
140

40 120
15A

(ns)
100
(A)

7.5A

30
80
TJ = 125°C TJ = 25°C
20 60

TJ = 150°C 40
10
TJ = -55°C 20

0 0
0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
1200 30

IRRM, REVERSE RECOVERY CURRENT


T = 125°C T = 125°C
J J
Qrr, REVERSE RECOVERY CHARGE

V = 400V 30A V = 400V


R R
30A
1000 25

800 20
15A
(nC)

(A)
600 15

15A
400 10
7.5A
7.5A
200 5

0 0
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs) -diF /dt, CURRENT RATE OF CHANGE (A/µs)

Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.2 40
Qrr Duty cycle = 0.5
trr T = 175°C
J
35
Kf, DYNAMIC PARAMETERS

1.0
trr
(Normalized to 1000A/µs)

IRRM 30
0.8
25
IF(AV) (A)

0.6 20

Qrr 15
0.4
10
0.2
5

0.0 0
0 25 50 75 100 125 150 25 50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
160

140
CJ, JUNCTION CAPACITANCE

120

100
(pF)

80

60
053-6010 Rev M 7-2015

40

20

0
1 10 100 200
VR, REVERSE VOLTAGE (V)

Figure 8. Junction Capacitance vs. Reverse Voltage


APT15D60K(G)
Vr
APT5018BLL
+18V diF /dt Adjus t

0V
D.U.T.
30µH trr/Q rr
Waveform

PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit

1 IF - Forward Conduction Current

2 diF/dt - Rate of Diode Current Change Through Zero Crossing. 1 4

3 IRRM - Maximum Reverse Recovery Current Zer o

4 trr - Reverse Recovery Time measured from zero crossing where 5 0.25 I RRM
3
diode current goes from positive to negative, to the point at
2
which the straight line through IRRM and 0.25, IRRM passes through zero.

5 Qrr - Area Under the Curve Defined by IRRM and tRR.

Figure 10. Diode Reverse Recovery Waveform Definition

TO-220 (K) Package Outline


e3 100% Sn

Cathode

Cathode
053-6010 Rev M 7-2015

Anode

Dimensions in millimeters and [inches]


APT15D60K(G)

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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any
053-6010 Rev M 7-2015

patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customer's final application. User or
customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s re-
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