Formula sheet

NMOSET transistor

1 W v 1 W v
iD   n C ox ( v GS  V t ) 2 (1  DS )  k n ( v GS  V t ) 2 (1  DS )
2 L VA 2 L VA
W   W 
g m  (  n C ox )   V OV  2 (  n C ox ) ID
 L   L 
V
ro  A
ID
1 I
VA  gm 
 V OV / 2

|VA|=|V΄A|.L

PMOSFET transistor

1 W v 1 W v
iD   p C ox ( v S G  Vt ) 2 (1  SD )  k p ( v SG  Vt ) 2 (1  SD )
2 L VA 2 L VA
W W
g m  ( p C ox ) VOV  2( p C ox ) I D
L L
VA
ro 
ID
1
VA 


|VA|=|V΄A|.L

BJT transistors

v CE
iC  ISe v BE / V T
(1  )
V A
iC  IC
iB   IB 
 
IC
g m 
VT
g m re  

 
  1

r 
gm
VA
ro 
IC

VT=25 mV VBE=0.7 V.
Output resistances: (If applicable, it is assumed that transistors used in each circuit of the below
cases are identical.)

Current Mirror: ro

Wilson Current Mirror (MOSFET): gmro2

Wilson Current Mirror (BJT): βro/2

Cascode Current mirror (MOSFET): gmro2

Widlar Current Mirror (BJT): ro(1+gm(Re||rπ)) (Re: resistance at the emitter)

Cascode Amplifier (MOSFET): gmro2

Cascode Amplifier (BJT): gmro(ro||rπ)

Active load differential amplifiers (MOSFETs, BJTs): ro/2

Common-source/Common-gate amplifiers (with the source resistance of Rs and Early effect):

ro(1+gmRS)

Common-emitter/Common-base amplifiers (with the emitter resistance of Re and Early effect):

ro(1+gm (Re||rπ))

Input resistances (Note: RL is the load resistance)

Common-Emitter (with the emitter resistance of Re and Early effect): (β+1)re+ (β+1) Rero/(ro+RL)

Common-Base (with the Early effect):

( )

CMRRs

Active load differential amplifiers (BJT): 0.5 βgmREE

Active load differential amplifiers (MOSFET): (gm ro) (gm RSS)

Common-mode gains

Active-load differential amplifiers (MOSFET): -(2gmRSS)-1

Active-load differential amplifiers (BJT): -[ro/(βREE)]

Non active-load differential amplifiers (MOSFET): RD/(2RSS) (RD: resistance at the drain)

Non active-load differential amplifiers (BJT): RC/(2REE) (RC: resistance at the collector)

Note:

REE: output resistance of the current source used for the biasing of BJTs.

RSS: output resistance of the current source used for the biasing of MOSFETs.