Device Lab Manual (New)

Meghnad Saha Institute of Technology
Nazirabad, Kolkata-150
Electronic Devices Laboratory

(EC391)
Laboratory Manual
Version 2
Dept. of Electronics & Communication Engineering

Nazirabad, Kolkata-150
Electronic Devices
Laboratory Manual
Dept. of Electronics & Communication Engineering
Prepared By: Dr. Swarnil Roy

Approved By : Dr. Manash Chanda, HOD, Dept. of ECE
Version: 2
Mission of the Department
To strive for excellence in education & research in Electronics & Communication
Engineering to offer engineering solutions to meet new challenges.
Vision of the Department

1. To create efficient and competent professionals by imparting quality educations
in the field of electronics and communication engineering which can contribute to
the advancement of science and technology.
2. To promote research and development activities in the field of electronics and

communication engineering leading to the creation of knowledge and of
intellectual property.
3. To provide value based education leading to entrepreneurial initiatives toward

socio economic development of society.
4. To create effective and ethical professionals, capable of accepting new

challenges in the emerging field of science and engineering through lifelong
learning.
Program Outcomes (POs)
Program Outcomes (POs): Engineering Graduates will be able to:
(a) Engineering Knowledge: Apply the knowledge of mathematics, science, engineering

fundamentals, and an engineering specialization to the solution of complex engineering
problems.
(b) Problem Analysis: Identify, formulate, review research literature, and analyze complex
engineering problems reaching substantiated conclusions using first principles of
mathematics, natural sciences, and engineering sciences.
(c) Design/development of solutions: Design solutions for complex engineering

problems and design system components or processes that meet the specified needs with
appropriate consideration for the public health and safety, and the cultural, societal, and
environmental considerations.
(d) Conduct investigations of complex problems: Use research-based knowledge and
research methods including design of experiments, analysis and interpretation of data, and
synthesis of the information to provide valid conclusions.
(e) Modern tool usage: Create, select, and apply appropriate techniques, resources, and
modern engineering and IT tools including prediction and modeling to complex engineering
activities with an understanding of the limitations.
(f) The engineer and society: Apply reasoning informed by the contextual knowledge to
assess societal, health, safety, legal and cultural issues and the consequent responsibilities
relevant to the professional engineering practice.
(g) Environment and sustainability: Understand the impact of the professional
engineering solutions in societal and environmental contexts, and demonstrate the
knowledge of, and need for sustainable development.
(h) Ethics: Apply ethical principles and commit to professional ethics and responsibilities and
norms of the engineering practice.
(i) Individual and team work: Function effectively as an individual, and as a member or
leader in diverse teams, and in multidisciplinary settings.
(j) Communication: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as, being able to comprehend and
write effective reports and design documentation, make effective presentations, and give
and receive clear instructions.
(k) Project management and finance: Demonstrate knowledge and understanding of the
engineering and management principles and apply these to one's own work, as a member
and leader in a team, to manage projects and in multidisciplinary environments.
(l) Life-long learning: Recognize the need for, and have the preparation and ability to
engage in independent and life-long learning in the broadest context of technological
change.
Program Specific Outcomes (PSOs)

Program Specific Outcomes (PSOs): The students will be able to:
 PSO1: Analyze specific engineering problems relevant to electronics and

communication engineering by applying the knowledge of basic sciences, engineering
mathematics, and fundamentals.
 PSO2: Design electronics and communication systems containing electronic devices,

embedded systems, software, and hardware using significant analytical knowledge in
electronics and communication engineering and allied domains, applying modern tools.
 PSO3: Apply the specific knowledge of electronics and communication engineering

for environmental, health, safety, and cultural issues.
Department Program Educational Objectives (PEOs):
 PEO 1: The graduates shall have a good understanding of the Electronics and
Communication Engineering fundamentals for identifying and analyzing real-life
engineering problems in communication, automation, and VLSI industries.
 PEO 2: The graduates will be encouraged in research and innovative approaches for
successful career growth in VLSI, communication, embedded and automation industries
and blossom into entrepreneurs, scientists, and technocrats.
 PEO 3: The graduates shall have the expertise in cutting-edge interdisciplinary

technology like Data Science, Artificial Intelligence, Image Processing, Machine
Learning, and IoT using modern software tools for measurable and impactful
contributions that strongly support the organization’s high-level goals.
 PEO4: The graduates shall be inculcated with professional ethics, and managerial
and communication skills to develop ingenious solutions for the benefit of society and the
environment
ELECTRONIC DEVICES LABORATORY
DO’S
1. Be regular and punctual in the lab.

2. Follow proper Dress Code.
3. Avoid unnecessary talking in the laboratory.
4. Know the theory behind the experiment before coming to the laboratory.
5. Identify the different leads or terminals or pins of the components before making
connection.
6. Before starting Laboratory work follow all written and verbal instructions
carefully. If you do not understand a direction or part of a procedure, ask your
concern teacher before proceeding with the activity.
7. Circuit should be checked by the concern faculty/TA before switch on the circuit.
8. Handle the Instruments and components properly.
9. Keep the bags outside the laboratory.
10. Wear cover shoes to avoid unnecessary electrical shock.
11. Keep the Table clean.
12. Take a signature of the In charge before taking the components.
13. After the completion of the experiment switch off the power supply and other
instruments and return the components.
14. Arrange the chairs/tools and equipment properly before leaving the lab.
DON’ TS
1. Do not exceed the voltage Rating.
2. Do not inter change the components while doing the experiment without consent of
the lab-in charge.
3. Avoid loose connections and short circuits.
4. Do not throw the connecting wires on the floor.
5. Do not come late in the laboratory.
6. Do not make noise if you don’t get the output or result. Concern Faculty/TA will
guide you.
Rules and regulations for Electronic Devices
Laboratory
1. Students should not enter in the lab without the permission of lab
In-Charge.
2. Every student/faculty should mention their name, time and
computer/Equipment no. in the log book before accessing the lab.
3. Students may use the lab in their allotted classes only. In other
cases they can also use the lab with prior permission.
4. Do not access the lab in absence of the faculty member.
5. Cleanliness and disciplines should be maintained properly.
All of you are advised to follow the above mentioned rules.
Rubrics for Lab Performance Assessment
Each week students will be assessed on their participation and performance in lab.
The points each week will be totaled and combined with assignments/report
writing for overall evaluation.
Overall Lab Performance (End of the semester)
Lab participation- 40 % of internal marks (i.e.16)
Assignments/Report submission- 60% of internal marks (24)
A. Lab performance is excellent with the majority of assessments rated as

proficient. The student has attended all labs.
B. Lab performance is good with most assessments at the adequate level (with no
more than 2 substandard) or above. At most the student has one lab absence.
C. Lab performance is fair with most assessments at the Adequate and Substandard
levels. The student may have been absent 2-3 times.
D. Lab performance is barely adequate with less than half of assessments at the
Adequate level or higher. The student may have been absent upto 40% of total
experiments.
E. Lab performance is not sufficient to pass since 50% of assignments were not
completed (or unacceptable) and/or the student missed more than 50% of total
experiments.
The rubrics for Lab Performance assessment are shown in Table B.2.2.1.9 and
Table B.2.2.1.10
Table B.2.2.1.9 Rubrics for Lab Performance Assessment (Offline mode)
Quality score Excellent Good Fair Poor Mark

Criteria (> 90%) (70-90)% (50-70)% (< 50%) s
Lab Participation Student Student Student Student 10

(Following demonstrates arrives on under was absent
Procedure+ Lab an accurate time to lab, preparedne from lab or
Techniques+ understandin but may be ss makes it did not
Subject g of the lab underprepar impossible participate.
Knowledge+ objectives ed. Answers to fully There was
Contribution) and concepts. to questions participate. no attempt
The student are basic If able to to make
can correctly and participate, prior
answer superficial student has arrangeme
questions suggesting difficulty nts to make
and if that explaining up the lab.
appropriate, concepts are key lab
can explain not fully concepts.
concepts to grasped.
fellow
classmates.
Student is
eager to
participate
and assists
when
needed.
Lab report Student Student has Student Student 10
demonstrates a basic has submits the
an accurate knowledge problems lab report
understandin of content, with both late or the
g of the lab but may the graphs report is so
objectives lack some and the incomplete
and concepts. understandi answers. and/or so
Questions are ng of Student inaccurate
answered concepts. appears to that it is
completely Questions have not unacceptab
and are fully le
correctly. answered grasped
Graphs are fairly well the lab
neat, creative and/or content
and include graphs could and the
complete have been graph (s)
titles and done more possess
accurate neatly, multiple
units. Errors, accurately errors.
if any are or with
minimal. more
complete
information
Interaction with Very good Good Minimal No 10
Group (Team participation participation participatio participatio
work) with a good ; appears n; shows n; sitsn on
leadership interested; little the
quality; is enthusiastic interest; sidelines
respectful of but talks doesn’t with no
others and over pay interaction;
their point of teammates; attention to disintereste
view; makes try to help other d; no stake
sure that group group in time
everyone complete members; manageme
gets a turn; tasks; may argue nt
conscious of somewhat to get point
time. conscious of across;
time helps
groupm
only when
asked;
little
emphasis
on time
Safety Proper safety Proper Proper Proper 5
precautions safety safety safety
are precautions precaution precautions
consistently are s are often are
followed generally missed consistentl
followed. y missed
Seldom
warned.
Cleaning/Rearrang Placed all the Proper Needs to Proper 5
ing after components clean-up be clean-up
experiment as per procedures reminded procedures
instruction generally more than are seldom
after followed. once used.
experiment; Station during the Requires
Keep generally lab to use other’s
experiment left clean. proper help to
stationgenera May need clean-up complete
lly neat and reminding procedures clean-up.
clean. occasionally .
Consistently .
uses proper
clean-up
procedures.
Reminds
others of
their
responsibility
Table 2.2.1.10 Rubrics for Lab Performance Assessment (Online mode)
Quality score Excellent Good Fair Poor Mark

Criteria (> 90%) (70-90)% (50-70)% (< 50%) s
Lab Student Student is Student is Student was 20

Participation demonstrates underprepare not able to absent from
(Following an accurate d to perform carry out lab classes or
Procedure+ understandin experiment the did not
Lab g of the lab on his own.. experiment complete
Techniques+ objectives Answers to on his own. most of the
Subject and concepts. questions are Even after experiments.
Knowledge+ Student basic and guidance, . There was
Contribution performs the superficial he/she finds no attempt to
) experiments suggesting it difficult make prior
in virtual that concepts to complete arrangement
platform are not fully the s to carry out
individually, grasped. experiment. the lab.
without . If able to
assistance participate,
from the lab student has
Technician. difficulty
The student explaining
can correctly key lab
answer concepts.
questions
from the
faculty
member.
Lab report Student Student has a Student has Student 20
demonstrates basic problems submits the
an accurate knowledge of with both lab report
understandin content, but the graphs late or the
g of the lab may lack and the report is so
objectives some answers. incomplete
and concepts. understanding Student and/or so
Questions are of concepts. appears to inaccurate
answered Questions are have not that it is
completely answered fully unacceptable
and correctly. fairly well grasped the
Graphs are and/or graphs lab content
neat, creative could have and the
and include been done graph (s)
complete more neatly, possess
titles and accurately or multiple
accurate with more errors.
units. Errors, complete
if any are information
minimal.

MEGHNAD SAHA INSTITUTE OF TECHNOLOGY
Department of Electronics and Telecommunication Engineering
Electronic Devices laboratory (EC391)
LIST OF EXPERIMET
1.Familiarization with Electronic Components such as Resistor, Capacitor, Diode, Transistor,

FET etc.
2. Study of different instruments used in the laboratories like, power supply, Oscilloscope,
Multi-meter etc.
3.Study of I-V characteristics of p-n junction diode.
4.Study the characteristics of Zener diode and load regulation.
5. Study the characteristics of LED.
6. Study of LDR.
7. Study of I-V characteristics of BJT in common base mode.
8. Study of I-V Characteristic curves for CE mode transistors.
9.Study of drain characteristics and transfer characteristics of a JFET and hence determine the
FET parameters (drain resistance, transconductance & amplification factor).
10.Study of self bias BJT circuit.
11. Innovative Experiment-1(Resistive inverter using nMOS)
12. Innovative Experiment-2(Logic Gates using BJT)

Department of ECE
Electronic Devices Laboratory Internal Evaluation Sheet
OFF-LINE
Odd Semester; AY 20 – 20 .
Name of Student: Semester: 3rd Stream: ECE
Class Roll No. : Course Name: Electronic Devices Course Code: EC391
Laboratory
University Roll No.:
Lab Lab Team Safety Rearranging

Participation Repor Work after
Expt Expt. Name t (5) experiment Remarks Signature
No (10) (10) of
(10) (5) Evaluator
Average Total in
40:
Signature of Evaluator with date

MSIT/ECE/Electronics Device laboratory/
EC391/EX-1

Laboratory Manual
Course Name: Electronics Device laboratory
Course Code: EC391
Experiment No: 1
Name of the experiment: Familiarization with Electronic Components such as Resistor, Capacitor, Diode,
Transistor, FET etc.
1A.Course Outcome: The students will be able to identify different electronics components, equipment and
measuring instruments(EC391.1).
1B Objective: to get the basic knowledge of electronic components such as resistor, capacitor,
diode,LED,transistors, FET etc.
2. Theory:
Resistor:
A resistor is a two-terminal electronic component that produces a voltage across its terminals that is proportional
to the electric current through it in accordance with Ohm's law:
V = IR
Resistors are elements of electrical networks and electronic circuits and are ubiquitous in most electronic
equipment. Practical resistors can be made of various compounds and films, as well as resistance wire (wire made
of a high-resistivity alloy, such as nickel/chrome).
The primary characteristics of a resistor are the resistance, the tolerance and the power rating.
Resistors can be integrated into hybrid and printed circuits, as well as integrated circuits. Size, and position of
leads (or terminals) are relevant to equipment designers; resistors must be physically large enough not to overheat
when dissipating their power.
Power dissipation
The power dissipated by a resistor is the voltage across the resistor multiplied by the current through the resistor:
If the average power dissipated is more than the resistor can safely dissipate, the resistor may depart from its
nominal resistance, and may be damaged by overheating.
EC391/EX-1
Fig. 1: Different types of resistors.

The ohm (symbol: Ω) is a SI-driven unit of electrical resistance, named after Georg Simon Ohm. Commonly used
multiples and submultiples in electrical and electronic usage are the milliohm (1x10 -3), kilohm (1x103), and
megohm (1x106).
Most axial resistors use a pattern of colored stripes to indicate resistance. Surface-mount resistors are marked
numerically, if they are big enough to permit marking; more-recent small sizes are impractical to mark. Cases are
usually tan, brown, blue, or green, though other colors are occasionally found such as dark red or dark gray.
Early 20th century resistors, essentially uninsulated, were dipped in paint to cover their entire body for color
coding. A second color of paint was applied to one end of the element, and a color dot (or band) in the middle
provided the third digit. The rule was "body, tip, dot", providing two significant digits for value and the decimal
multiplier, in that sequence. Default tolerance was ±20%. Closer-tolerance resistors had silver (±10%) or gold-
colored (±5%) paint on the other end.
Types of resistors
1. Fixed resistor
2. Variable resistor
Fixed resistors are classified as follows
a) Thin film resistor
b) Thick film resistor
c) Metal film resistor
Four-band resistors
Four-band identification is the most commonly used color-coding scheme on resistors. It consists of four colored
bands that are painted around the body of the resistor. The first two bands encode the first two significant digits of
the resistance value, the third is a power-of-ten multiplier or number-of-zeroes, and the fourth is the tolerance
accuracy, or acceptable error, of the value. The first three bands are equally spaced along the resistor; the spacing
to the fourth band is wider. Sometimes a fifth band identifies the thermal coefficient, but this must be
distinguished from the true 5-color system, with 3 significant digits.
For example, green-blue-yellow-red is 56×104 Ω = 560 kΩ ± 2%. An easier description can be as followed: the
first band, green, has a value of 5 and the second band, blue, has a value of 6, and is counted as 56. The third
band, yellow, has a value of 104, which adds four 0's to the end, creating 560,000Ω at ±2% tolerance accuracy.
560,000Ω changes to 560 kΩ ±2% (as a kilo- is 103).
EC391/EX-1
Fig. 2: Resistor colour code

Capacitor:
Capacitors store electric charge. They are used with resistors in timing circuits because it takes time for a
capacitor to fill with charge. They are used to smooth varying DC supplies by acting as a reservoir of charge.
They are also used in filter circuits because capacitors easily pass AC (changing) signals but they block DC
(constant) signals.
A capacitor or condenser is a passive electronic component consisting of a pair of conductors separated by a
dielectric. When a voltage potential difference exists between the conductors, an electric field is present in the
dielectric. This field stores energy and produces a mechanical force between the plates. The effect is greatest
between wide, flat, parallel, narrowly separated conductors.
Types of capacitors
a) Paper capacitor
b) Mica capacitor
c) Ceramic capacitor
d) Electrolytic capacitor
Capacitors are also classified as fixed, adjustable, or variable. The capacitance of fixed capacitors remains
unchanged, except for small variations caused by temperature fluctuations. The capacitance of adjustable
EC391/EX-1
capacitors may be set at any one of several discrete values. The capacitance of variable capacitors may be
adjusted continuously and set at any value between minimum and maximum limits fixed by construction.
Capacitance is a measure of a capacitor's ability to store charge. A large capacitance means that more charge can
be stored. Capacitance is measured in farads, symbol F. However 1F is very large, so prefixes are used to show
the smaller values.
Three prefixes (multipliers) are used, µ (micro), n (nano) and p (pico):
 µ means 10-6 (millionth), so 1000000µF = 1F
 n means 10-9 (thousand-millionth), so 1000nF = 1µF
 p means 10-12 (million-millionth), so 1000pF = 1nF
Capacitor values can be very difficult to find because there are many types of capacitor with different labelling
systems! There are many types of capacitor but they can be split into two groups, polarised and unpolarised. Each
group has its own circuit symbol.
Polarised capacitors (large values, 1µF +)
Examples: Circuit symbol:

Fig.3: Circuit symbol of capacitor
Electrolytic Capacitors
Electrolytic capacitors are polarised and they must be connected the correct way round, at least one of their leads
will be marked + or -. They are not damaged by heat when soldering.
There are two designs of electrolytic capacitors; axial where the leads are attached to each end (220µF in picture)
and radial where both leads are at the same end (10µF in picture). Radial capacitors tend to be a little smaller and
they stand upright on the circuit board.
It is easy to find the value of electrolytic capacitors because they are clearly printed with their capacitance and
voltage rating.
Unpolarised capacitors (small values, up to 1µF)
Examples: Circuit symbol:

Fig.4: Circuit symbol of capacitor
Small value capacitors are unpolarised and may be connected either way round. They are not damaged by heat
when soldering, except for one unusual type (polystyrene). They have high voltage ratings of at least 50V, usually
250V or so. It can be difficult to find the values of these small capacitors because there are many types of them
and several different labelling systems!
EC391/EX-1
Many small value capacitors have their value printed but without a multiplier, so you need to use experience to
work out what the multiplier should be!
For example 0.1 means 0.1µF = 100nF.
Sometimes the multiplier is used in place of the decimal point: For example: 4n7
means 4.7nF.
Capacitor Number Code
A number code is often used on small capacitors where printing is difficult:
the 1st number is the 1st digit,
the 2nd number is the 2nd digit,
the 3rd number is the number of zeros to give the capacitance in pF.
Ignore any letters - they just indicate tolerance and voltage rating.
For example: 102 means 1000pF = 1nF (not 102pF!)
For example: 472J means 4700pF = 4.7nF (J means 5% tolerance).
Colour code is also used for find the value of capaticor.
Diode:
In electronics, a diode is a two-terminal device (thermionic diodes may also have one or two ancillary terminals
for a heater).
Diodes have two active electrodes between which the signal of interest may flow, and most are used for their
unidirectional electric current property. The varicap diode is used as an electrically adjustable capacitor.
Most diodes today are based on semiconductor p-n junctions. In a p-n diode, conventional current is from the p-
type side (the anode) to the n-type side (the cathode), but not in the opposite direction. Another type of
semiconductor diode, the Schottky diode, is formed from the contact between a metal and a semiconductor rather
than by a p-n junction.
Diodes allow electricity to flow in only one direction. The arrow of the circuit symbol shows the direction in
which the current can flow. Diodes are the electrical version of a valve and early diodes were actually called
valves.
Circuit symbol:
Fig.5: Circuit symbol of diode
Diodes must be connected the correct way round, the diagram may be labelled a or + for anode and k or - for
cathode (yes, it really is k, not c, for cathode!). The cathode is marked by a line painted on the body. Diodes are
labelled with their code in small print, you may need a magnifying glass to read this on small signal diodes!
EC391/EX-1
Fig.6: Circuit symbol of diode

You can use a multimeter or a simple tester (battery, resistor and LED) to check that a diode conducts in one
direction but not the other. A lamp may be used to test a rectifier diode, but do NOT use a lamp to test a
signal diode because the large current passed by the lamp will destroy the diode!
Diode Zener diode Schottky diode Tunnel diode
Light-emitting diode Photodiode Varicap Silicon controlled

rectifier
Fig.7: Circuit symbol of different types of diode

Transistor:
The transistor is the fundamental building block of modern electronic devices. In electronics, a transistor is
a semiconductor device commonly used to amplify or switch electronic signals. A transistor is made of a solid
piece of a semiconductor material, with at least three terminals for connection to an external circuit. A voltage or
current applied to one pair of the transistor's terminals changes the current flowing through another pair of
terminals. Because the controlled (output) power can be much more than the controlling (input) power, the
transistor provides amplification of a signal.
There are two types of standard transistors, NPN and PNP, with different circuit symbols. The letters refer to the
layers of semiconductor material used to make the transistor. Most transistors used today are NPN because this is
the easiest type to make from silicon. If you are new to electronics it is best to start by learning how to use NPN
transistors.
The leads are labelled base (B), collector (C) and emitter (E). These terms refer to the internal operation of a
transistor but they are not much help in understanding how a transistor is used, so just treat them as labels!
EC391/EX-1
Fig.8: Circuit symbol of two types transistors

Transistors can be damaged by heat when soldering or by misuse in a circuit. If you suspect that a transistor may
be damaged there are two easy ways to test it:
Use a multimeter or a simple tester (battery, resistor and LED) to check each pair of leads for conduction. Set a
digital multimeter to diode test and an analogue multimeter to a low resistance range.
Test each pair of leads both ways (six tests in total):
 The base-emitter (BE) junction should behave like a diode and conduct one way only.
 The base-collector (BC) junction should behave like a diode and conduct one way only.
 The collector-emitter (CE) should not conduct either way.
The diagram shows how the junctions behave in an NPN transistor. The diodes are reversed in a PNP transistor
but the same test procedure can be use.
FET:
There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide
Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The
principles on which these devices operate (current controlled by an electric field) are very similar — the primary
difference being in the methods by which the control element is made.
In its simplest form the junction field-effect transistor starts with nothing more than a bar of doped silicon that
behaves as a resistor. By convention, the terminal into which current is injected is called the source terminal,
since, as far as the FET is concerned, current originates from this terminal. The other terminal is called the drain
terminal. Current flow between source and drain is related to the drain-source voltage by the resistance of the
intervening material. In n-channel FET p-type regions have been diffused into the n-type substrate leaving an n-
type channel between the source and drain. These p-type regions will be used to control the current flow between
the source and the drain and are thus called gate regions. Reverse is happen in p-channel FET.
3. Requirement:
 Resistors
 Capacitors
 Diodes
 Transistors
 FET
EC391/EX-1
4. Results and Simulations:

Resistance Measurement:
Sr. Colour code of resistance Value of Resistance

No
1st Band 2nd Band 3rd Band Last Band Calculated Measured Deviation
value value with
Multimeter
5. Discussions & Conclusions:
6. Area of applications:
Knowledge can be applied to identify & measure the parameters of the components.
7. Question Banks:
 List important specifications of the diode.
 List different types of the diode.
 List different types of the resistor.
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age International Publishers.
Advanced electronic practical book by A.B.Bhattacharya New Central Book Agency(P) Ltd.
EC391/EX-2

Laboratory Manual
Course Name: Electronics Device laboratory
Course Code: EC391
Experiment No:2
Name of the Experiment: Study of different instruments used in the laboratories like, power supply,
Oscilloscope, Multi-meter etc.
1A.Course Outcome: The students will be able to identify different electronics components, equipment and
measuring instruments(EC391.1).
1B Objective: to study the use of power supply, multimeter and to observe different waveforms on the
C.R.O. and measure amplitude and frequency of the waveforms.
2. Theory:
Power supply:
Power is the backbone of any electronic system and the power supply is what feeds the system. A power supply
takes the AC from the wall outlet, converts it to unregulated DC, and reduces the voltage using an input power
transformer, typically stepping it down to the voltage required by the load. For safety reasons, the transformer
also separates the output power supply from the mains input.
C.R.O:
C.R.O. (Cathode Ray Oscilloscope) is the instrument which is used to observe signal waveforms. Signals are
displayed in time domain i.e. variation in amplitude of the signal with respect to time is plotted on the CRO
screen. X-axis represents time and Y-axis represents amplitude. It is used to
measure amplitude, frequency and phase of the waveforms. It is also used to observe shape of the waveform.
C.R.O. is useful for troubleshooting purpose. It helps us to find out gain of amplifier, test oscillator circuits. We
can measure amplitude and frequency of the waveforms at the different test
points in our circuit. Thus, it helps us for fault finding procedure.
Latest digital storage oscilloscope display voltage and frequency directly on the LCD and does not require any
calculations. It can also store waveform for further analysis. In this practical, we will measure amplitude and
frequency of the different waveforms like sine wave, square wave, triangular
wave.
EC391/EX-2
Procedure:
1. Connect function generator output at the input of C.R.O. at channel 1or at channel 2
2. Select proper channel i.e. if signal is connected to channel 1 select CH1 and if signal is connected to channel 2
select CH2
3. Adjust Time /Div knob to get sufficient time period displacement of the wave on the CRO screen.
4. With fine tuning of time/Div make the waveform steady on screen.
5. Use triggering controls if waveform is not stable.
6. Keep volt/div knob such that waveform is visible on the screen without clipping.
7. Measure P-P reading along y-axis. This reading multiplied with volt/div gives peak to peak amplitude of the ac
i/p wave.
8. Measure horizontal division of one complete cycle. This division multiplied by time/div gives time period of
the i/p wave.
9. Calculate frequency using formula f = 1/T.
10. Note down your readings in the observation table.
Multimeter:
A multimeter, is a device used to measure two or more electrical quantities. A multimeter can be used to measure
electrical functions such as voltage, current, resistance, continuity and some are able to measure electrical
frequency.
3. Requirement:
Apparatus:
Function Generator
C.R.O
Function Vertical Volt/div Amplitude Horizont Time/d Time Freq.

Division (b) (p-p) al Div iv T f=1/T
(a) V=a*b (c) (d) =c*d
Sine
wave
Square
Wave
Triangular
Wave
Calculation:
Amplitude (p-p) = a*b
Frequency (f) = 1/T
Draw the graph from above results.
Knowledge can be applied to measure and test signal at different point of the circuit.
7. Question Banks:
What is the use of C.R.O.
EC391/EX-2
What is highest voltage that can be measured by C.R.O. available in your laboratory?
What is the highest frequency that can be measured by C.R.O. availablein your laboratory?
8. References:
MSIT/ECE/Electronic Devices laboratory/
EC391/EX-3

Laboratory Manual
Course Name: Electronic Devices laboratory
Course Code: EC391
Experiment No:3
Name of the Experiment: Study of I-V characteristics of p-n junction diode.
1A.Course Outcome: The students will be able to describe the characteristics of PN junction diodes to
tabulate different parameter(EC391.2).
1B Objective:
To plot the I-V characteristics of a forward biased p-n junction diode.
To measure the static and dynamic resistance of a forward biased p-n junction diode.
2. Theoryp–n junction is a junction formed by joining P-type and N-type semiconductors together in very close
contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought
of as the border region between the p-type and n-type blocks. Forward bias occurs when the P-type semiconductor
material is connected to the positive terminal of a battery and the N-type semiconductor material is connected to
the negative terminal. This usually makes the p–n junction conduct.
With a battery connected this way, the holes in the P-type region and the electrons in the N-type region are pushed
towards the junction. This reduces the width of the depletion zone. The positive charge applied to the P-type
material repels the holes, while the negative charge applied to the N-type material repels the electrons. As
electrons and holes are pushed towards the junction, the distance between them decreases. This lowers the barrier
in potential. With increasing forward-bias voltage, the depletion zone eventually becomes thin enough that the
zone's electric field can't counteract charge carrier motion across the p–n junction, consequently reducing
electrical resistance. The electrons which cross the p–n junction into the P-type material (or holes which cross into
the N-type material) will diffuse in the near-neutral region. Therefore, the amount of minority diffusion in the
near-neutral zones determines the amount of current that may flow through the diode.
If a diode is reverse biased, the voltage at the cathode is higher than that at the anode. Therefore, no current will
flow until the diode breaks down. Connecting the P-type region to the negative terminal of the battery and the N-
type region to the positive terminal corresponds to reverse bias. Because the p-type material is now connected to
the negative terminal of the power supply, the 'holes' in the P-type material are pulled away from the junction,
causing the width of the depletion zone to increase. Similarly, because the N-type region is connected to the
positive terminal, the electrons will also be pulled away from the junction. Therefore the depletion region widens,
and does so increasingly with increasing reverse-bias voltage. This increases the voltage barrier causing a high
resistance to the flow of charge carriers thus allowing minimal electric current to cross the p–n junction. Typical
graph is shown below.
EC391/EX-3
Circuit Diagram:
Procedure:
 Connect the apparatus and the components as per circuit diagram.
 Circuit should be checked by the teacher.
 Vary the input voltage from 0.2V to1V at an interval of 0.2V, 1V to 3V at an interval of 0.5V, 3V to 8V
at an interval of 1V and measure the corresponding diode voltage and diode current.
3. Requirement:
Apparatus:
 DC Power Supply
 Voltmeter (0-2) V/Multimeter
 Ammeter (0-50) mA/ Multimeter
Component:
EC391/EX-3
 Diode (1N4007)
 Resistor (560Ω)/1kΩ
SL NO INPUT VOLTAGE DIODE VOLTAGE DIODE CURRENT
Calculation:
Static resistance =∑V/ ∑I
Dynamic resistance =∆V/∆I
Knowledge can be applied to design rectifier circuit.
7. Question Banks:
 List important specifications of the diode.
 What is breakdown voltage?
 List different types of the diode.
 List applications of the diode?
8. References:
EC391/EX-4

Laboratory Manual
Course Code: EC391
Experiment No: 4
Name of the Experiment: Study the characteristics of Zener diode and load regulation.
1A.Course Outcome: The students will be able to explain zener diode characteristics and regulation
property (C391.3).
1B. Objective:
To plot the I-V characteristics of a reverse biased Zener diode.
To measure the static and dynamic resistance of a reverse biased Zener diode.
To calculate the load regulation as a voltage regulator.
2. Theory:
The Zener diode is a heavily doped special purpose diode. Where the common diode is designed to never let
current flow in the reverse direction, the Zener is designed to break down and let current flow backward at some
specific voltage called Zener breakdown voltage. They conduct like a normal diode in the forward direction but in
the reverse direction will not allow the voltage across the diode to exceed the rated zener voltage. Consequently,
they make great voltage regulators or references. The current must be externally limited otherwise it will be
damaged if the current isn't held to a safe value. This is usually accomplished with a simple resistor. Typical
characteristics graph of Zener diode in reverse biased mode is shown below.
EC391/EX-4
Circuit Diagram:
Procedure:

 Vary the input voltage from 1V to5V at an interval of 1V, 1V to 8V Zener at an interval of 0.5V, 8V to
12V at an interval of 2V and measure the corresponding Zener voltage and Zener current.
 To check the regulation characteristics we connect a 1k resistor parallel to the diode after zener
breakdown occur.
3. Requirement:
Apparatus:
 DC Power Supply
 Voltmeter (0-20) V
 Ammeter (0-50) mA
Component:
 Zener Diode
 Resistors (560Ω),1k
INPUT VOLTAGE ZENER VOLTAGE ZENER CURRENT

EC391/EX-4
Calculation:
Static resistance =VZ/IZ
Dynamic resistance =∆VZ/∆IZ
Regulation =[(VNL –VFL)/ VNL]*100%
Knowledge can be applied to design voltage regulator circuit.
7. Question Banks:
 What is the breakdown voltage of Zener diode used in your practical?
 What is the specialty of Zener diode so as we can operate it in breakdown region for longer duration?
 What is the difference between Zener breakdown and Avalanche breakdown?
8. References:
EC391/EX-5

Laboratory Manual
Course Code: EC391
Experiment No: 5
Name of the Experiment: Study the characteristics of LED
1A.Course Outcome: The students will be able to discuss properties of photoelectric devices
(C391.6).
1B. Objective:
To plot the I-V characteristics of forward biased LED.
2. Theory:
A Light Emitting Diode (LED) is a semiconductor diode that emits light when an electric current is applied in
forward bias direction of the device as in simple LED circuit. The effect is a form of electro-luminescence where
incoherent and narrow-spectrum light is emitted from the p-n junction.
LED Characteristics
Two important characteristics of a LED are its Light intensity vs. Current and Junction Voltage vs. Current
characteristics. These are described briefly below.
i)Light Intensity (Optical Power) vs. Current

This is a very important characteristic of an LED. It was shown earlier that the optical power generated by an
LED is directly proportional to the injected current I (current through the LED). However, in practice the
characteristic is generally non-linear, especially at higher currents. The near-linear light output characteristic of an
LED is exploited in small length fiber optic analog communication links, such as fiber optic closed-circuit TV.
ii) Junction Voltage vs. Current

The junction voltage vs. current characteristic of an LED is similar to the V-I characteristics of diodes. However,
there is one major difference. The knee voltage of a diode is related to the barrier potential of the material used in
the device. Silicon diodes and bipolar junction transistors are very commonly used whose knee voltage or junction
voltage is about 0.7 V. Very often it is wrongly assumed that other diodes also have the same junction voltage. In
an LED, depending on the material used its junction voltage can be anywhere between 1.5 to 2.2 Volts.
EC391/EX-5
Like conventional PN junction diodes, light emitting diodes are current-dependent devices with its forward
voltage drop VF, depending on the semiconductor compound (its light colour) and on the forward biased LED
current. Most common LED’s require a forward operating voltage of between approximately 1.2 to 3.6 volts with
a forward current rating of about 10 to 30 mA, with 12 to 20 mA being the most common range.
Both the forward operating voltage and forward current vary depending on the semiconductor material used but
the point where conduction begins and light is produced is about 1.2V for a standard red LED to about 3.6V for a
blue LED.
The exact voltage drop will of course depend on the manufacturer because of the different dopant materials and
wavelengths used. As an LED is effectively a diode, its forward current to voltage characteristics curves can be
plotted for each diode colour as shown below.
Circuit Diagram:
EC391/EX-5
Procedure:

 Vary the input voltage from 1V to2.5V at an interval of 0.2V, 2.5V to 5V at an interval of 0.5V and
measure the corresponding LED voltage and LED current.
.
3. Requirement:
Apparatus:
 DC Power Supply
Component:
 L.E.D
 Resistor 560 ohm/1k

EC391/EX-5
INPUT VOLTAGE L.E.D VOLTAGE L.E.D CURRENT
Calculation:
Knowledge can be applied to design LED circuit.
7. Question Banks:
 What is the basic principle of LED?
 Why SI is not used in LED?
 What are the advantages of LED lights?
8. References:
EC391/EX-6

Laboratory Manual
Course Code: EC391
Experiment No: 6
Name of the Experiment: Study of LDR and it’s application as switch.
1A.Course Outcome: The students will be able to show properties of photoelectric devices.
(C391.5)
1B. Objective: To study the characteristics of LDR.
2. Theory:
A Light Dependent Resistor (LDR) is also called a photoresistor or a cadmium sulfide (CdS) cell. It is also called
a photoconductor. It is basically a photocell that works on the principle of photoconductivity. When the light is
absorbed by the material then the conductivity of the material enhances. When the light falls on the LDR, then the
electrons in the valence band of the material are eager to the conduction band. The passive component is basically
a resistor whose resistance value decreases when the intensity of light decreases.
This optoelectronic device is mostly used in light varying sensor circuit, and light and dark activated switching
circuits. Some of its applications include camera light meters, street lights, light beam alarms, reflective smoke
alarms, and outdoor clocks.
EC391/EX-6
Circuit Diagram:
Procedure:

3. Requirement:
Apparatus:
 DC Power Supply
Component:
 L.D.R
 Resistor 1k

EC391/EX-6
Calculation:
7. Question Banks:
 What is the basic principle of LDR?
 What are the advantages of LDR?
8. References:
MSIT/Eelectronic devices laboratory/
EC391/EX-6

Laboratory Manual
Course Code: EC391
Experiment No: 6
Name of the Experiment: Study of I-V characteristics of BJT in common base mode.
1A.Course Outcome: The students will be able to apply the characteristics of BJT to design self bias circuit
(EC391.4).
1B. Objective:
To Study the Input & Output Characteristics of Transistor in common base configuration.
Calculate the value of input and output resistance of a CB connected transistor.
Calculate the current amplification factor α. for the CB connected transistor.
2. Theory:
In common base configuration the base is common to both the input and output circuit hence the name common
base configuration. The input characteristic in a common base configuration is a plot between V EB and IE at
constant VCB. The input characteristic represents that of a forward biased p-n junction diode with very low input
impedance. The output characteristic in a CB configuration is a plot of V CB and IC at constant IE. In the output
characteristics IC varies with VCB at very low voltages and after that becomes almost constant thus showing that
output impedance is high. The current amplification factor in case of CB connected transistor is below 1. Typical
graph for input and output characteristics of CB mode transistor configuration is shown below.
EC391/EX-6
Circuit Diagram:
Procedure:
 Connect the apparatus and components as per the circuit diagram.
 The circuit to be checked by the teacher.
 For the input characteristics set VCB constant at 2V and then at 4V and vary the input supply and observe
the changes in IE.
 For the output characteristics set IE constant at 10mA and then at 15mA and then vary the output supply
to observe the changes in VCB and IC.
 Plot the input and output characteristics in cm graph paper.
3. Requirement:
Apparatus:
 DC Power Supply
 Voltmeter (0-20) V
EC391/EX-6
Component:
 Transistor(BC107)
 Resistor (1kΩ)
Table for plotting Input Characteristic curve:
Serial No. Emitter- Base voltage(VEB) (in Emitter current(IE) (in Value of VCB(in Volt)
Volt) mA)
2V
4V
Table for plotting Output Characteristic curve:
Serial No. Collector-Base Voltage(VCB) (in Volt) Collectorcurrent(IC) (in mA) Value of IE(in mA)
10mA
EC391/EX-6
15mA
Calculation:
 Input resistance = ∂VEB/ ∂IE (At const VCB)
 Current amplification factor α= IC /IE
Knowledge can be applied to design amplifier circuit.
7. Question Banks:
 Why transistor is called transistor?
 Is transistor a current control device or a voltage control device?
 Define current gain of the transistor in CB configuration. What is the DC current gain you obtain in this
practical?
8. References:
MSIT/ECE/ Electronic devices laboratory/
EC391/EX-8

Laboratory Manual
Course Name: Electronic devices laboratory
Course Code: EC391
Experiment No:8
Name of the Experiment: Study of Characteristic curves for CE mode transistors.
1A.Course Outcome: Students will be able to apply the characteristics of BJT to design self bias circuit
(C391.4).
1B. Objective:
To Study the Input & Output Characteristics of Transistor in CE mode configuration.
Calculate the value of input and output resistance of a transistor in CE mode configuration.
Calculate the current amplification factor of a transistor in CE mode configuration.
2. Theory:
CE mode configuration:
In a BJT, the emitter-base junction is forward biased so that the impedance of the emitter circuit is low and a
current flows between the emitter and the base. A change in the emitter current produces a change in the collector
current, giving the transistor action. The input characteristics for a given configuration refer to the plot of input
current vs. input voltage with the output voltage as a parameter.
In CE configuration input current and output voltage are taken as independent variables, whereas the input voltage
and output current are taken as dependent variable. Here the input current is base current IB and input voltage is
base emitter voltage VBE. Thus the input characteristic for the CE configuration is the plot of I B versus VBE with
VCE as a parameter. Normally the base emitter junction is biased in forward direction so the input characteristic
curve is similar to the forward characteristic curve of a diode. The input characteristic of a typical transistor is
shown the figure below.
EC391/EX-8
Here the output current is collector current IC and output voltage is collector emitter voltage VCE. Thus the Output
characteristic for the CE configuration is the plot of VCE versus IC with IB as a parameter. The output
characteristics curve can be divided into three distinct regions, namely the active region, the saturation region, and
the cutoff region.
The output characteristic of a typical transistor connected in CE mode is shown the figure below.
Circuit Diagram:
EC391/EX-8
Procedure:
For input characteristics:

Fix VCE through variable DC Supply.
Increase VBE through variable DC Supply in suitable steps. And note down the readings of VBE and corresponding
IB in a specified table.
While increasing VBE, value of VCE may shift. Then readjust it.
Repeat the same for next value of VCE.
For output characteristics:

Fix IB through variable DC Supply.
Increase VCE through variable DC Supply in suitable steps. And note down the readings of VCE and corresponding
IC in a specified table.
Repeat the same for next value of IB.
3. Requirement:
 DC regulated power supply (0-30)V

 Voltmeter, Ammeter/ Digital Multimeter
 Bread Board
 BC107
 Resistors(10k,1k)
Table for plotting Input Characteristic curve (CE Configuration):
Serial No. Base-Emitter Voltage(VBE) (in Base current(IB) (in Value of VCE(in Volt)
Volt) µA)
4V
8V
EC391/EX-8
12V
Table for plotting output Characteristic curve (CE Configuration):
Serial No. Collector-Emitter Voltage(VCE) Collector current(IC) Value of IB(in µA)

(in Volt) (in mA)
10 µA
20 µA
30 µA
Draw the characteristics graph from the above results.
Calculation:
 Input impedance(CE mode)= ∆VBE/ ∆IB (At const VCE)
 Current amplification factor β= IC /IE
.5. Discussions & Conclusions:
7. Question Banks:
 What is the input impedance of BJT in CB configuration?
EC391/EX-8
 Compare between the input impedance of BJT in CE configuration and in CB configuration.

 Can we replace a transistor by two back to back connected diode?
 What is the relation between α and β?
8. References:
MSIT/ECE/Electronic Devices
Laboratory /EC391/EX-9

Lab Manual
Course Name: Electronic Devices Laboratory
Course Code: EC391
Experiment No: 9
Name of the experiment: Study of drain characteristics and transfer characteristics

of a JFET and hence determine the FET parameters (drain resistance,
transconductance & amplification factor).
1A.Course Outcome: Students will be able to discuss the characteristics of FET (EC391.5).
1B. Objective: To draw the drain and transfer characteristics of a JFET.

To find the drain resistance (rd) amplification factor (μ) and transconductance (gm) for a
given JFET.
2. Theory:
Static Characteristic: The graphical plots of drain current (I d) against the drain to source voltage
(Vds) with gate-to-source voltage (Vgs) as constant are known as static characteristics of JFET.
Initially assume that Vgs is 0V. Then for a small applied voltage Vds the device acts like a
resistor and current increases linearly with the voltage. An unequal ohmic drop results with
increasing Vds. The drop is more near the drain compared to the source due to reverse bias, and so
the channel region gets restricted resulting in a constant current flow. This constant current is
termed as saturation current. The voltage at which the current Id saturates at the value Idss is
known as pinch-off voltage. If Vds is increased further the reverse voltage at this drain region
increases resulting in a breakdown. So the device is operated in three regions, i.e. as a resistor in
the ohmic resistance region, as a constant current in the active region and in breakdown region.
Transfer Characteristic: This relates the Vgs and Id for a constant Vds. When Vgs= 0V then for a
particular value of Vds Id is maximum. As Vgs is increased, Id decreases and finally becomes
zero due to the reduction in effective channel width, at which the device is said to be cut-off.
Typical drain and transfer characteristics curve for a n-channel JFET is shown in figure below.
Procedure:
Fix the voltage of Vgs by Power Supply.
Change Vds by Power Supply with suitable steps.
Take readings of Id at different values of Vds.
Repeat the same for next value of Vgs.
Circuit diagram:
3. Requirement:
 DC regulated power supply (0-30)V
 Voltmeter, Ammeter/ Digital Multimeter
 Bread Board
 BFW10
 Resistors(10k,1k)
 Connecting Wires
 Cutter
4. Observations/Results:
Vds(V) Id(mA)
Vgs= 0V Vgs= -0.5V Vgs= -1.0V Vgs= -1.5V Vgs= -2.0V
Draw the characteristics graph from above results.
Calculation:
Drain resistance rd
rd = ∆Vds/∆Id (at constant Vgs)
Transconductance gm
gm =∆Id/∆Vgs (at constant Vgs)
Amplification factor
µ = rd x gm (at constant ID)

FET is an ideal device for use in almost every application in which transistors can be used. FETs
are widely used as input amplifiers in oscilloscopes, electronic voltmeters and other measuring
and testing equipment because of their high input impedance.
7. Question Banks:
 Distinguish FET and BJT?
 What is pinch-off voltage of JFET?
 Distinguish ohmic region & saturation region.
8. References:
G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition,

Pearson,2014.
S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley
& Sons, 2006.
Electronics fundamentals and application by D.Chattopadhyay & P.C.Rakshit, New Age
International Publishers.
EC391/EX-10

Laboratory Manual
Course Code: EC391
Experiment No:10
Name of the Experiment: Study of self bias BJT circuit.
1A.Course Outcome: The students will be able to apply the characteristics of BJT to design self bias circuit
(C391.4).
1B. Objective:
To Study the self bias circuit and measure the collector current under different load.
2. Theory:
The name self bias is coined because of the fact all the DC variations around Q-point tends to adjust itself. Here
the common emitter transistor configuration is biased using a voltage divider network to increase stability. The
name of this biasing configuration comes from the fact that the two resistors RB1 and RB2 form a voltage or
potential divider network across the supply with their center point junction connected the transistors base terminal
as shown.
This self bias or voltage divider biasing configuration is the most widely used transistor biasing method. The
emitter diode of the transistor is forward biased by the voltage value developed across resistor RB2. Also, voltage
divider network biasing makes the transistor circuit independent of changes in beta as the biasing voltages set at
the transistors base, emitter, and collector terminals are not dependant on external circuit values.
To calculate the voltage developed across resistor RB2 and therefore the voltage applied to the base terminal we
simply use the voltage divider formula for resistors in series.
Generally the voltage drop across resistor RB2 is much less than for resistor RB1. Clearly the transistors base
voltage VB with respect to ground, will be equal to the voltage across RB2.
The amount of biasing current flowing through resistor RB2 is generally set to 10 times the value of the required
base current IB so that it is sufficiently high enough to have no effect on the voltage divider current or changes in
Beta.
The goal of Transistor Biasing is to establish a known quiescent operating point, or Q-point for the bipolar
transistor to work efficiently and produce an undistorted output signal. Correct DC biasing of the transistor also
establishes its initial AC operating region with practical biasing circuits using either a two or four-resistor bias
network.
EC391/EX-10
In bipolar transistor circuits, the Q-point is represented by (VCE, IC ) for the NPN transistors or ( VEC, IC ) for PNP
transistors. The stability of the biasing network and therefore the Q-point is generally assessed by considering the
collector current as a function of both Beta (β) and temperature.
Circuit Diagram:
Procedure:
Connect the circuit in the kit as per circuit diagram.

Fix VCC through variable DC Supply.
Change the value of RC and note down the value of IC.
3. Requirement:
 Transistor trainer kit(TAT01)

 Digital Multimeter

EC391/EX-10
RC (Kilo-ohm) 2.2k 1k 560Ω

IC (milli-amp)
Calculation:
 Assume I2>10IB ,VCC=16V,R1=22K,R2=4.7K,RC=2.2K,RE=560Ω,Transistor(2N2222)
 VB=[R2/( R1+R2)]* VCC=
 VE= VB -0.7V=
 IE= VE/RE=
 IC is near equal to IE
 Therefore IC(calculated)=
.5. Discussions & Conclusions:
7. Question Banks:
 What is the stability factor of transistor?
 What is Q point?
 Name the different type of biasing in BJT.
8. References:
MSIT/ECE/ELECTRONIC DEVICES
LAB/EC391/EX-11

Lab Manual
Course Name: ELECTRONIC DEVICES LABORATORY
Course Code: EC391
Experiment No: 11
Name of the experiment: Resistive inverter using nMOS(Innovative Experiment).
1A.Course Outcome:
1B. Objective: To study the application of nMOS as inverter.
2. Theory: The basic structure of a resistive load inverter is shown in the figure given
below. Here, enhancement type nMOS acts as the driver transistor. The load consists of a
simple linear resistor RL. The power supply of the circuit is VDD and the drain current
ID is equal to the load current IR.
When the input of the driver transistor is less than threshold voltage V TH (Vin < VTH),
driver transistor is in the cut – off region and does not conduct any current. So, the
voltage drop across the load resistor is zero and output voltage is equal to the VDD. Now,
when the input voltage increases further, driver transistor will start conducting the non-
zero current and nMOS goes in saturation region.
The main advantage of using MOSFET as load device is that the silicon area occupied by
the transistor is smaller than the area occupied by the resistive load. Here, MOSFET is
active load and inverter with active load gives a better performance than the inverter with
resistive load.
Procedure:
Connect the circuit as per circuit diagram.
Fix the voltage of VDD by Power Supply.
Take readings of input voltage V1 and corresponding output voltage VO.
Circuit diagram:
LAB/EC391/EX-11
3. Requirement:
 DC power supply (5V)
 Function Generator
 Bread Board
 IRF540
 Resistor(1k)
 Connecting Wires
 Cutter
SL NO Input Voltage Output Voltage
Calculation:

LAB/EC391/EX-11
6. Area of applications: The analysis of inverters can be extended to explain the

behavior of more complex gates such as NAND, NOR etc. In this experiment we focus
on one single inverter gate, as it is certainly the most popular at present and therefore
deserves our special attention.
7. Question Banks:
 Advantages of the MOSFET.
 Whether the MOSFET is voltage controlled or current controlled device?
 Explain the three regions of operation of MOSFET.
8. References:
Pearson,2014.
& Sons, 2006.
LAB/EC391/EX-12

Lab Manual
Course Name: ELECTRONIC DEVICES LABORATORY
Course Code: EC391
Experiment No: 12
Name of the experiment: Logic Gates using BJT (Innovative Experiment).
1A.Course Outcome:
1B. Objective:
2. Theory: The use of transistors for the construction of logic gates depends upon their
utility as fast switches. When the base-emitter diode is turned on enough to be driven into
saturation, the collector voltage with respect to the emitter may be near zero and can be
used to construct gates for the TTL logic family.
AND, OR, NOT are called basic gates as their logical operation cannot be simplified
further.

Name of the Symbol Boolean Truth table
Gate Expression
NOT yA A Y
0 1
1 0
AND y  A.B A B Y
0 0 0
0 1 0
1 0 0
1 1 1
OR y  A B A B Y
0 0 0
0 1 1
1 0 1
1 1 1
LAB/EC391/EX-12
Procedure:
Connect the circuit as per circuit diagram.
Fix the voltage of VDD by Power Supply.
Take readings of input voltage V1 and corresponding output voltage VO.
Circuit Diagram:
NOT GATE
LAB/EC391/EX-12
OR GATE
AND GATE
3. Requirement:
 TAT-01 Kit
 Multimeter
NOT GATE
Input Output(L.L) Output(L.V)
LAB/EC391/EX-12
OR GATE
Input1 Input2 Output(L.L) Output(L.V)
AND GATE
Input1 Input2 Output(L.L) Output(L.V)
Calculation:
6. Area of applications: The knowledge of application of BJT as Gate can be extended

to explain the behavior of more complex gates such as NAND, NOR etc.
7. Question Banks:
 What are the 2 main types of transistors?
 What are the 3 function of transistors?

 What is the symbol of FET?
8. References:

Pearson,2014.
& Sons, 2006.

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Meghnad Saha Institute of Technology

Electronic Devices Laboratory

Dept. of Electronics & Communication Engineering

Dept. of Electronics & Communication Engineering

Prepared By: Dr. Swarnil Roy

Vision of the Department

2. To promote research and development activities in the field of electronics and

3. To provide value based education leading to entrepreneurial initiatives toward

4. To create effective and ethical professionals, capable of accepting new

(a) Engineering Knowledge: Apply the knowledge of mathematics, science, engineering

(c) Design/development of solutions: Design solutions for complex engineering

Program Specific Outcomes (PSOs)

 PSO1: Analyze specific engineering problems relevant to electronics and

 PSO2: Design electronics and communication systems containing electronic devices,

 PSO3: Apply the specific knowledge of electronics and communication engineering

 PEO 3: The graduates shall have the expertise in cutting-edge interdisciplinary

1. Be regular and punctual in the lab.

A. Lab performance is excellent with the majority of assessments rated as

Table B.2.2.1.9 Rubrics for Lab Performance Assessment (Offline mode)

Quality score Excellent Good Fair Poor Mark

Lab Participation Student Student Student Student 10

Table 2.2.1.10 Rubrics for Lab Performance Assessment (Online mode)

Quality score Excellent Good Fair Poor Mark

Lab Student Student is Student is Student was 20

1.Familiarization with Electronic Components such as Resistor, Capacitor, Diode, Transistor,

3.Study of I-V characteristics of p-n junction diode.

4.Study the characteristics of Zener diode and load regulation.

5. Study the characteristics of LED.

7. Study of I-V characteristics of BJT in common base mode.

8. Study of I-V Characteristic curves for CE mode transistors.

10.Study of self bias BJT circuit.

11. Innovative Experiment-1(Resistive inverter using nMOS)

12. Innovative Experiment-2(Logic Gates using BJT)

Electronic Devices Laboratory Internal Evaluation Sheet

Name of Student: Semester: 3rd Stream: ECE

University Roll No.:

Lab Lab Team Safety Rearranging

Signature of Evaluator with date

MEGHNAD SAHA INSTITUTE OF TECHNOLOGY

Fig. 1: Different types of resistors.

Fig. 2: Resistor colour code

Examples: Circuit symbol:

Examples: Circuit symbol:

Fig.6: Circuit symbol of diode

Diode Zener diode Schottky diode Tunnel diode

Light-emitting diode Photodiode Varicap Silicon controlled

Fig.7: Circuit symbol of different types of diode

Fig.8: Circuit symbol of two types transistors

4. Results and Simulations:

Sr. Colour code of resistance Value of Resistance

5. Discussions & Conclusions:

MEGHNAD SAHA INSTITUTE OF TECHNOLOGY

4. Results and Simulations:

Function Vertical Volt/div Amplitude Horizont Time/d Time Freq.

5. Discussions & Conclusions:

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4. Results and Simulations:

SL NO INPUT VOLTAGE DIODE VOLTAGE DIODE CURRENT

Dynamic resistance =∆V/∆I

Draw the graph from above results.

5. Discussions & Conclusions:

MEGHNAD SAHA INSTITUTE OF TECHNOLOGY