NIKO-SEM N-Channel Enhancement Mode PK5E4BA

Field Effect Transistor PDFN 5x6P

Halogen-Free & Lead-Free

D D D D D
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
30V 9.5mΩ 40A G G. GATE
D. DRAIN
S. SOURCE
S #1 S S S G

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±25 V
TC = 25 °C 40
Continuous Drain Current3 ID
TC = 100 °C 25
1
Pulsed Drain Current IDM 120
A
TA = 25 °C 14
Continuous Drain Current ID
TA = 70 °C 11
Avalanche Current IAS 21
Avalanche Energy L = 0.1mH EAS 22 mJ
TC = 25 °C 29
Power Dissipation PD W
TC = 100 °C 12
TA = 25 °C 3.9
Power Dissipation4 PD W
TA = 70 °C 2.5
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2 t ≦10s RJA 32
2
Junction-to-Ambient Steady-State RJA 58 °C / W
Junction-to-Case Steady-State RJC 4.2
1
Pulse width limited by maximum junction temperature.
2
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3
Package limitation current is 35A.
4
The Power dissipation is based on RJA t ≦10s value.

REV 1.1 H-1-5

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NIKO-SEM N-Channel Enhancement Mode PK5E4BA
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.5 2.3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS A
VDS = 20V, VGS = 0V, TJ = 55 °C 10

Drain-Source On-State VGS = 4.5V, ID = 8.8A 10 15

RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 11A 7 9.5
Forward Transconductance1 gfs VDS = 5V, ID = 11A 30 S
DYNAMIC
Input Capacitance Ciss 530
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 155 pF

Reverse Transfer Capacitance Crss 94

Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.5 Ω
VGS = 10V 13.5
Total Gate Charge2 Qg
VGS = 4.5V VDS = 15V , VGS = 10V, 7.7
Gate-Source Charge 2
Qgs ID = 11A 1 nC
2
Gate-Drain Charge Qgd 4.5

Turn-On Delay Time2 td(on) 18

Rise Time2 tr VDS = 15V , 16
2
nS
Turn-Off Delay Time td(off) ID  11A, VGS = 10V, RGEN =6Ω 35
Fall Time2 tf 17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 24 A
Forward Voltage1 VSD IF = 11A, VGS = 0V 1.2 V
Reverse Recovery Time trr 14 nS
IF = 11A, dlF/dt = 100A / S
Reverse Recovery Charge Qrr 4 nC
1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.1 H-1-5

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 NIKO-SEM N-Channel Enhancement Mode PK5E4BA
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

Output Characteristics Transfer Characteristics

24 24
VGS=10V
VGS=9V
VGS=8V
ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

20 VGS=7V 20
VGS=6V VGS=3V
VGS=5V
VGS=4.5V
16 16
VGS=3.5V

12 12

8 8

25℃
4 4
125℃
-20℃
0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)

Gate charge Characteristics Capacitance Characteristic

10 700
VDS=15V
ID=11A
VGS , Gate-To-Source Voltage(V)

600
8
C , Capacitance(pF)

500
CISS

6
400

300
4

200

2 COSS
100
CRSS

0 0
0 3 6 9 12 15 0 5 10 15 20 25 30

Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V)

On-Resistance VS Gate-To-Source On-Resistance VS Drain Current

0.03 0.012

VGS=4.5V
0.01
RDS(ON)ON-Resistance(OHM)

RDS(ON)ON-Resistance(OHM)

0.024

0.008
0.018
VGS=10V
0.006

0.012
0.004
ID=11A

0.006
0.002

-5.55E-17 0
2 4 6 8 10 0 3 6 9 12 15

VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A)

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 NIKO-SEM N-Channel Enhancement Mode PK5E4BA
Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

On-Resistance VS Temperature Source-Drain Diode Forward Voltage

2.0 100

1.8
Normalized Drain to Source

IS , Source Current(A)
1.6
150℃
ON-Resistance

10
1.4

1.2

1.0 25℃
1

0.8

VGS=10V
0.6 ID=11A

0.4 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ , Junction Temperature(˚C) VSD, Source-To-Drain Voltage(V)

Safe Operating Area Single Pulse Maximum Power Dissipation

1000 45
Operation in This
Area is Limited by
RDS(ON) Single Pulse
100 36 RθJA = 58˚C/W
↓ TA=25˚C
ID , Drain Current(A)

Power(W)

10 27

1ms 18
1
10ms
100ms
NOTE :
1.VGS= 10V 9
0.1
2.TA=25˚C
DC
3.RθJA = 58˚C/W
4.Single Pulse

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100

VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

10

Duty cycle=0.5
Transient Thermal Resistance

0.2
r(t) , Normalized Effective

0.1
0.05
0.02
1 0.01

Notes

0.1

1.Duty cycle, D= t1 / t2
2.RthJA = 58 ℃/W
3.TJ-TA = P*RthJA(t)
single pulse
4.RthJA(t) = r(t)*RthJA

0.01
0.0001 0.001 0.01 0.1 1 10 100

T1 , Square Wave Pulse Duration[sec]

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