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Hexagonal Close-Packed Strudure APFforHCP

(HCP) A Siles C=l.633a
Numbtr of atcms in HCP unit cell=
• AW-, Stmg Sequence B sites (12'1/6~2•11l)+3=6atoms
• 30 Pra;ection • 2D Projection \'olof HO' unit cell=
A sites MU of the hwgonal face X height of the hexagonal
Asites Top ~y@r Area of the hexagonal fare=area of each triangle X6

Bsites Middle layer

Asites Bottom layer

• ··
•7

• Coonlnation I =12 6atoms/unh cell

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==-------- • APF=0.74 ex:Cd, Ilg, Ti, Zn
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=-=------ • c/a= 1.633 IAPF -0.1, 1

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LL __ _ _ ENGLI~ IUNITfD STAIB! ::: NOTES a COMMENTS

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~ MIT WORLD PEACE

MIT·WPU UNIVERSITY PUNE
~fl ~lllaliO'KDll.-"T'Qil l ._......
Imperfection in crystal structure
• In crystal imperfections we can say that the crystal
are rarely observed to be perfect. The defects in
27 ;.; =,;:- r .-=.., • =-....,_

~ - ::..:::=-: atomic structures and their arrangement are called as

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imperfections.
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• Dislocation follow an extended and sometimes
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• There are so many other types of defects found in the
29 ~=-
structure of the crystals.
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30
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27 ==-
* :.-::-=-:-:;:.:::=-=-:
-------- CLASSIFICATION OF DEFECTS BASED ON DIMENSIONALITY
------
·= -------
=::::=.-_, ___ _

,.
OD
(Point defects) 11
1D
(Une defects)
2D
(Surface I Interface)
3D
(Volume defects)
j [
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I impurity 1 I Disclination I lnterphase

boundary
I Precipitate I
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regio n
30 de fect ~ undary j
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de fect
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boundary
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31
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,.._.....__,..._., ___ Stacking
faults [Thenn~
11ibrario11

'
Anti-phase
boundaries
32 ... ....- - -
,., ---==:--=:~"'-
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* --=·~--
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27 ~=-
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., Jtil MITWORl.o PEACE
MIT·WPU UNIVERSITY PUNE
~fl' ~ ~ I O Q l l WO-•IOli•~
Crystal imperfections
• Crystal structures are never perfect , there are defects
in the arrangements of atoms in crystalline materials.
29 =- "·- ~-~
:.=.:
* "°"'" "'·---------- • Imperfections arise during solidification of crystalline
·.- __ __--_-
-.....-
•...._---- materials,
30
,. -- -~ - .P- - -- • Or they may occur during processing of materials like
mechanical deformation.
• Adding alloying element is a deliberately introduced
imperfection.

32 ...,....,,- - -
~ ...-.::::::=:-.::=:;:_-..--
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~ MIT WORLD PEACE Classification of Defects / Imperfections

MIT·WPU UNIVERSITY PUNE
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29 :=.: =- ,,______
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[ • The following are types of defects such as,
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30 - --
-·--=- -~ -·- 01. Point defects

□ 2. Line defects
._____,,_,.._ ... ...._
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31
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UNIVERSITY PUN[
P6int defects
29
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• The point defects take place due to imperfect packing of atoms
--•------
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.-.---··- - [ during crystallisation are called as point defects.
30 -----,,,;==-=:::=:::::==:~ ~
,. • Following types of point defects are as follows :::::
-
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I. Vacancy defect
31
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II. Interstitial defect

III.Substitutional defect
32 ......__
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IV.Frenkel defect

V. Schottky defect

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Sunil D.
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30 - . . . A ;,TWORLD
PEACE Point defects
--- -- -
,.. -------:-
._ -. MIT·WPU UNIVERSITY PUNE
~.. ~ ~D:)11&-c:,.afOI I .......S

31 :-=-
II They are imper:fect point- like regions. one or two [

atomic diamet~\s in size and hence referred to as

32 ........
4
zero dimensional imperfections'.
* -.. .--,----
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II There are different kinds of point imperfections.
VACANCIES
33 ==-
ii If an atom is missing from its normal site in the
matrix, the defect is called a vacancy defect.
* ""=-
34 _ __ .. ____ _
~ It may be a single vacancy, divacancy or a trivacancy.
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~ MIT WORLD PEACE

MIT·WPU UNIVERSITY PUNE
........... 1'0aG»...-O,l:IOJI.W0,11'1)11 1 ...........
Point defects
..
32 ,.;. ._- - -
:::--:..::,._-:::---'-

•Vacancy == missing of an atom from the lattice

pos}tion.
33 ,;=-
• It can happen due to nuclear irradiation of a
material, rresence of an additional atom in the
interstitia space.
34 ,:.=-
* ·•=·-- . -----
-"--·--··
:=r=------·- • Frenkel defect == Ion removed from its regular
.::=..~.:~--=--==-- position and moved to interstitial position.
~ - --- " -
35 ..:..=- •Schottky defect == missing pair of ions of
opposite charge.

__
36 -=-
,.
: I 1_•1•
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---
-~--- --
---
-- ----
------ - A.. MIT WORLD PEACE
MIT·WPU UNIVERSITY P\JNE
~
Point defects of crystals

34 ~=-
=--_ . _____
·------ -··
=.,:-.,,, _ _ _ _ _

·::=~·..-===-
='..--:"' __ _ .,,, _ __
[
□
Vacancy Interstitial impurity Self-interstitial

.,......~-.- ....
-·
. . . . . .. _ _ . . i - - - .

Substitution impurity Frenkel defect

--.v·-
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---- • MITWO
RLDPEACE
-- --
--- MIT· WPU UNIVERSITY
--- - -
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PUNE
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Substitution defect
34 :: =-
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C ~ It refers to a foreign atom that substitutes for or
,. = ==-
35
replaces a parent atom in the crystal.

~ Pentavalent or trivalent impurity atoms doped

in Silicon or Germanium are also substitutional
impurities in the crystal.
3 -■ -
It
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A PEACE
MIT·WPU UNIVERSITY PUNE
....... "
MITWORLD
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Interstitial defect

~ An interstitial defect arises when an atom occupies a [

definite position in the lattice that is not normally occupied
in the perfect crystal.

~ In crystals, packing density is always less than I.

,.
40 = =-
~ If a small sized atom occupies the void space in the parent
crystal without disturbing the parent atoms from their
~ ____.,______ _ regular sites, then it is called as 'interstitial impurity' .
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H : I L"JI