BCR3KM-12LA

Features
• IT (RMS) : 3 A • Insulated Type
• VDRM : 600 V • Planar Passivation Type
• IFGTI , IRGTI, IRGTⅢ : 20 mA (10 mA)Note5 • UL Recognized : Yellow Card No. E223904
• Viso : 2000 V File No. E80271

Outline

TO-220FN

2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3

Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general controlling
devices

Maximum Ratings
Voltage class
Parameter Symbol Unit
12
Note1
Repetitive peak off-state voltage VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V

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Parameter Symbol Ratings Unit Conditions

RMS on-state current IT (RMS) 3 A Commercial frequency, sine full wave
360° conduction, Tc = 109°C
Surge on-state current ITSM 30 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2 t 3.7 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3 W
Average gate power dissipation PG (AV) 0.3 W
Peak gate voltage VGM 6 V
Peak gate current IGM 0.5 A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.

Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125°C, VDRM applied
On-state voltage VTM — — 1.5 V Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
Ι Tj = 25°C, VD = 6 V, RL = 6 Ω,
Note2
Gate trigger voltage VFGTΙ — — 1.5 V
ΙΙ VRGTΙ — — 1.5 V RG = 330 Ω
ΙΙΙ VRGTΙΙΙ — — 1.5 V
Ι Tj = 25°C, VD = 6 V, RL = 6 Ω,
Note2 Note5
Gate trigger current IFGTΙ — — 20 mA
ΙΙ IRGTΙ — — 20
Note5
mA RG = 330 Ω
ΙΙΙ
Note5
IRGTΙΙΙ — — 20 mA
Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
°C/W
Note3
Thermal resistance Rth (j-c) — — 4.0 Junction to case
Critical-rate of rise of off-state (dv/dt)c 5 — — V/µs Tj = 125°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)

Commutating voltage and current waveforms

Test conditions
(inductive load)
1. Junction temperature Supply Voltage Time
Tj = 125°C
2. Rate of decay of on-state commutating current (di/dt)c
Main Current Time
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage Main Voltage Time
VD = 400 V (dv/dt)c VD

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Performance Curves

Maximum On-State Characteristics Rated Surge On-State Current

2
10 40
7 Tj = 25°C
5

Surge On-State Current (A)

35
3
On-State Current (A)

2 30
101
7 25
5
3 20
2
0 15
10
7
5 10
3 5
2
–1
10 0 0 1 2
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 10 2 3 5 7 10 2 3 5 7 10

On-State Voltage (V) Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Gate Characteristics (I, II and III) Junction Temperature

10
2 × 100 (%) 103
7 7 Typical Example
5
5
3
Gate Trigger Current (Tj = 25°C)

2 PGM = 3W IRGT III

Gate Trigger Current (Tj = t°C)

3
Gate Voltage (V)

1 PG(AV) = 0.3W
10 2
7
5 IGM =
3 VGT 0.5A 102
2 7 IFGT I, IRGT I
10
0 5
7
5 3
3 IRGT I 2
2
IFGT I, IRGT III VGD = 0.2V
10
–1
0 1 2 3
101
10 2 3 5 710 2 3 5 710 2 3 5 710 –60 –40–20 0 20 40 60 80 100 120 140

Gate Current (mA) Junction Temperature (°C)

Gate Trigger Voltage vs. Maximum Transient Thermal Impedance

Junction Temperature Characteristics (Junction to case)
× 100 (%)

2
10 2 3 5 7103 2 3 5 7
Transient Thermal Impedance (°C/W)

103 5.0
7 Typical Example
4.5
5
Gate Trigger Voltage (Tj = 25°C)

4.0
Gate Trigger Voltage (Tj = t°C)

3
3.5
2
3.0
2
10 2.5
7 2.0
5
1.5
3
1.0
2
0.5
1
10 0 –1 0 1 2
–60 –40–20 0 20 40 60 80 100 120 140 10 2 3 5 710 2 3 5 710 2 3 5 710

Junction Temperature (°C) Conduction Time (Cycles at 60Hz)

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Maximum Transient Thermal Impedance

Characteristics (Junction to ambient) Maximum On-State Power Dissipation
3
Transient Thermal Impedance (°C/W) 10 5.0
7 No Fins

On-State Power Dissipation (W)

5 4.5
3
2 4.0
2
10 360° Conduction
7 3.5 Resistive,
5
3
2 3.0 inductive loads
1
10 2.5
7
5 2.0
3
2 1.5
0
10
7 1.0
5
3 0.5
2
–1
10 1 0
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Conduction Time (Cycles at 60Hz) RMS On-State Current (A)

Allowable Case Temperature vs. Allowable Ambient Temperature vs.

RMS On-State Current RMS On-State Current

160 160
120 × 120 × t2.3
140 140
Ambient Temperature (°C)
100 × 100 × t2.3
Case Temperature (°C)

120 120 60 × 60 × t2.3

100 Curves apply regardless 100

of conduction angle
80 80

60 60 All fins are black painted

aluminum and greased
40 40 Curves apply regardless
360° Conduction of conduction angle
20 Resistive, 20 Resistive, inductive loads
inductive loads Natural convection
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

RMS On-State Current (A) RMS On-State Current (A)

Allowable Ambient Temperature vs. Repetitive Peak Off-State Current vs.

× 100 (%)

RMS On-State Current Junction Temperature

160 105
Natural convection 7 Typical Example
Repetitive Peak Off-State Current (Tj = 25°C)

140 No Fins 5
Ambient Temperature (°C)

Repetitive Peak Off-State Current (Tj = t°C)

Curves apply regardless 3

120 of conduction angle 2
Resistive, inductive loads
104
100 7
5
80 3
2
60 3
10
7
40 5
3
20 2
0 102
0 0.5 1.0 1.5 2.0 2.5 3.0 –60 –40–20 0 20 40 60 80 100 120 140

RMS On-State Current (A) Junction Temperature (°C)

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Holding Current vs. Latching Current vs.

Junction Temperature Junction Temperature
× 100 (%) 103 103
7 Typical Example 7
5
5 Distribution
3

Latching Current (mA)

3 2 T2+, G–
Holding Current (Tj = 25°C)

2 Typical Example
Holding Current (Tj = t°C)

2 10
7
5
102 3
7 2
5 101
7
3 5
2 3 + +
2 T2–, G– Typical Example
T2 , G
1
10 100
–60 –40–20 0 20 40 60 80 100 120 140 –60 –40–20 0 20 40 60 80 100 120 140

Junction Temperature (°C) Junction Temperature (°C)

Breakover Voltage vs. Breakover Voltage vs.

× 100 (%)
Junction Temperature Rate of Rise of Off-State Voltage
× 100 (%)

160 160
Typical Example Typical Example
140 Breakover Voltage (dv/dt = 1V/µs) 140 Tj = 125°C
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (Tj = 25°C)

120 120
Breakover Voltage (Tj = t°C)

100 100

80 80

60 60
III Quadrant
40 40

20 20
I Quadrant
0 0 1 2 3 4
–60 –40–20 0 20 40 60 80 100 120 140 10 2 3 5 710 2 3 5 710 2 3 5 710

Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs)

Gate Trigger Current vs.

Commutation Characteristics Gate Current Pulse Width
3
× 100 (%)

7 10
Main Voltage Time Typical Example Typical Example
Critical Rate of Rise of Off-State

5 7
Tj = 125°C
Commutating Voltage (V/µs)

(dv/dt)c VD IRGT III

Main Current IT = 4A 5
3 IT (di/dt)c
τ τ = 500µs 3 IRGT I
2
Gate Trigger Current (DC)

Time VD = 200V
Gate Trigger Current (tw)

2 IFGT I
1 f = 3Hz
10
7 102
5 7
Minimum III Quadrant 5
3 Characteristics
Value 3
2
2
0 I Quadrant
10
7 0 101 0
10 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 101 2 3 5 7 102

Rate of Decay of On-State Gate Current Pulse Width (µs)

Commutating Current (A/ms)

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Gate Trigger Characteristics Test Circuits

6Ω 6Ω

6V A 6V A
V 330Ω V 330Ω

Test Procedure I Test Procedure II

6Ω

A
6V
V 330Ω

Test Procedure III

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Package Dimensions

TO-220FN
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
  2.0 Cu alloy

10 ± 0.3 2.8 ± 0.2

6.5 ± 0.3
3 ± 0.3
15 ± 0.3

φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5

1.1 ± 0.2
1.1 ± 0.2

0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25
4.5 ± 0.2

Dimension in Millimeters
Symbol
Min Typ Max
2.6 ± 0.2

A
A1
A2
b
D
E
e
Note 1) The dimensional figures indicate representative values unless x
otherwise the tolerance is specified. y
y1
ZD
ZE

Order Code
Standard order
Lead form Standard packing Quantity Standard order code
code example
Straight type Plastic Magazine (Tube) 50 Type name BCR3KM-12LA
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR3KM-12LA-A8
Note : Please confirm the specification about the shipping in detail.

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