Professional Documents
Culture Documents
BN 72 فوزي عبد الجواد فوزي R4
BN 72 فوزي عبد الجواد فوزي R4
BJT: BJT is a bipolar device, which means it operates with both types of charge carriers, i.e., electrons
and holes.
FET: FET is a unipolar device, which means it operates with either electrons or holes, depending on the
type of FET.
FET: FET is a voltage-controlled device, which means its output current is controlled by the voltage
applied to the gate.
FET: FET has a lower linearity compared to BJT, which makes it suitable for applications where non-
linearity is acceptable, such as in digital circuits.
4-Input impedance:
BJT: BJT has a low input impedance, which means it requires a significant input current to drive it.
FET: FET has a high input impedance, which means it requires a low input current to drive it.
5-Fabrication simplicity:
BJT: BJT is more complex to fabricate due to its three-layer structure and the requirement of precise
doping of each layer.
FET: FET is simpler to fabricate compared to BJT as it requires only one type of doping and a thin
insulating layer.