Professional Documents
Culture Documents
Oxidation PPT PDF
Oxidation PPT PDF
Electronics Engineering
Wafer Growth
Wafer Cleaning
Oxidation
Epitaxy
Diffusion
Ion implantation
Lithography
Etching
Metallization
Packaging
3
IC Fabrication Technology BITS Pilani, Pilani Campus
Bridgman method
4
IC Fabrication Technology BITS Pilani, Pilani Campus
Czochralski method
5
IC Fabrication Technology BITS Pilani, Pilani Campus
Oxidation
6
IC Fabrication Technology BITS Pilani, Pilani Campus
Properties of thermally grown SiO2
• It is amorphous. • Atomic density: 2.31022 molecules/cm3
• Stable, reproducible and conformal SiO2 growth (For Si, it is 51022 atoms/cm3)
• Refractive index: n=1.46
• Melting point: 1700C
• Dielectric constant: =3.9 (why not =n2?)
• Density: 2.21 g/cm3 (almost the same as Si that
• Excellent electrical insulator: resistivity > 1020
is 2.33 g/cm3) cm, energy gap Eg=8-9 eV.
• Crystalline SiO2 [Quartz] = 2.65gm/cm3ti • High breakdown electric field: >107 V/cm
Conformal
growth
7
IC Fabrication Technology BITS Pilani, Pilani Campus
The Si/SiO2 interface
Thermal oxide
(amorphous)
Si substrate
(single crystal)
STI
9
IC Fabrication Technology BITS Pilani, Pilani Campus
Diffusion mask for common dopants
SiO2 can provide a selective mask against
diffusion at high temperatures. (DSiO2 << Dsi)
Oxides used for masking are 0.5-1μm thick.
Amouphous (thermal
oxide). 2.21 g/cm3
13
IC Fabrication Technology BITS Pilani, Pilani Campus
Thermal silicon oxidation methods
A three-tube horizontal
furnace with multi-zone
temperature control
Vertical furnace
Wet oxidation using H2 and O2 is more (not popular)
popular (cleaner) than using H2O vapor.
14
IC Fabrication Technology BITS Pilani, Pilani Campus
Thermal oxidation equipment
16
IC Fabrication Technology BITS Pilani, Pilani Campus
17
IC Fabrication Technology BITS Pilani, Pilani Campus
Surface profilometry (Dektak): mechanical
thickness measurement
Oxide etched away by HF over part
of the wafer and a mechanical stylus
is dragged over the resulting step.
Stylus
Mirror image of stylus
stylus
Film being
measured
Substrate
• After quarter wave plate, the linear polarized light becomes circular polarized, which is
incident on the oxide covered wafer.
• The polarization of the reflected light, which depends on the thickness and refractive
index (usually known) of the oxide layer, is determined and used to calculate the oxide
thickness.
• Multiple wavelengths/incident angles can be used to measure thickness/refractive index
of each film in a multi-film stack.
21
IC Fabrication Technology BITS Pilani, Pilani Campus
Electrical thickness measurement: C-V of MOSFET
Small AC voltage is
applied on top of the DC
voltage for capacitance
measurement.
23
IC Fabrication Technology BITS Pilani, Pilani Campus
24
IC Fabrication Technology BITS Pilani, Pilani Campus
The Use
• Masks
• Surface Passivation
To protect the junctions Only those
portions are exposed metal contacts.
• Gate oxide
• Isolation between devices
Different requirements
IC Fabrication Technology
• Si+O2 SiO2
Si
Si
Si + O2 SiO2
28 32 60
Volume * Density
27
BITS Pilani, Pilani Campus
Cont..
SiO2 550A0
450A0
Si
Methods
Oxide growth
put inside furnace
Left of the
Raise furnace temperature interface
Si
CG C*=Equilibrium
concentration of oxidising
CS Co
species in oxide
Ci
F1 F2 F3
From the bulk of the gas right next to the oxide gas interface
F1 α CG - CS
F1 = hG (CG –CS)
Gas law: PV = kT
F1
hG
PG PS (1)
kT
33
IC Fabrication Technology BITS Pilani, Pilani Campus
Cont..
h G C* Co
F1
HkT
F1 h C Co
*
(2)
reaction limited
Case I: t ∞
x Bt Parabolic growth
for any oxidation process two rate constants associated with this.
Wet Dry
0.406 0.021
20 times less
Wet Dry
0.203 0.005
40 times less
N1 large B small
But the equilibrium concentration (C*) of the oxidizing species for wet
oxidation (5x1019) three order higher than dry oxidation (5.2x1016)
9200 12000
0.203 0.72
D
EA
D D0 exp
kT
Dry 1.24 eV
EA Activation Energy Experimental Data
Wet 0.7 eV
9200 12000
0.406 14.4
KS
0.5 0.05
D in the numerator & KS in the denominator
BITS Pilani, Pilani Campus
Cont..
• Fails to predict
Explanations
~270A0
time
• another factor how fast the dopant can diffuse through oxide?
Case I
• Instead of amorphous poor quality crystalline SiO2 neither good for masking nor
useful for isolation
A 2D 1 1
*
B 2DC
PG C* Both B & B/A
KS h N1
Quality of oxide
• Charges non-idealities
1. Interface trapped Charges mechanical damage / broken bonds
Trichloroethyl
Chlorine gas, Cl 2
Anhydrous hydrogen ene, TCE
chloride, HCl
• At the end of the oxidation process before taking out the samples nitrogen
flushing for 15/20 minutes to remove the traces of oxygen before the temperature is
lowered fixed oxide charges < 1010 cm-2
71
IC Fabrication Technology BITS Pilani, Pilani Campus
BITS Pilani
Pilani Campus
Thank You