The latest advances of CoolSiC technology enable a significantly larger

gate operation window that improves the on-resistance for a given die
size. The larger window also is said to provide high robustness against
driver- and layout-related voltage peaks at the gate, without
restrictions even at higher switching frequencies.

According to Infineon, CoolSiC MOSFETs can cut charging time in

half while at the same trimming the charging station’s footprint. One
1,200-V SiC MOSFET is sufficient to support a dc-link voltage of 800
V.

Doubling the power density enables a 50% component count

reduction versus a silicon solution thanks to doubled voltage. Its 50%
lower conduction and switching losses from lower Coss (losses from
charging and discharging the parasitic output capacitor) increases
overall efficiency, thus lowering the cooling effort.

 “Our joint goal is to take automotive power electronics to the next

level,” said Robert Hermann, Product Line Head Automotive High-
Voltage Discretes and Chips, Infineon. “The low-inductive
environment of a PCB allows clean and fast switching. Combined with
the leading performance of 1,200-V CoolSiC devices, chip embedding
enables highly integrated and efficient inverters that reduce overall
system costs.”