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    Rustam Exp 1

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    Rustam Aliyev
    Rustam Aliyev, student ID 210136029, conducted an experiment on the characteristics of a PN junction diode under the supervision of lecturer Hamed Kaghachi. The experiment measured the forward and reverse bias voltages and currents of the diode. In forward bias, the current increased exponentially with voltage from 0.01mA at 0.4V to 263mA at 14V. In reverse bias, the current remained near zero until -14V, where it reached -0.14mA.

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    Rustam Exp 1

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    Rustam Aliyev
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    Rustam Aliyev, student ID 210136029, conducted an experiment on the characteristics of a PN junction diode under the supervision of lecturer Hamed Kaghachi. The experiment measured the forward and reverse bias voltages and currents of the diode. In forward bias, the current increased exponentially with voltage from 0.01mA at 0.4V to 263mA at 14V. In reverse bias, the current remained near zero until -14V, where it reached -0.14mA.

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    Rustam Aliyev, student ID 210136029, conducted an experiment on the characteristics of a PN junction diode under the supervision of lecturer Hamed Kaghachi. The experiment measured the forward and reverse bias voltages and currents of the diode. In forward bias, the current increased exponentially with voltage from 0.01mA at 0.4V to 263mA at 14V. In reverse bias, the current remained near zero until -14V, where it reached -0.14mA.

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    © All Rights Reserved
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    7 views6 pages

    Rustam Exp 1

    Uploaded by

    Rustam Aliyev
    Rustam Aliyev, student ID 210136029, conducted an experiment on the characteristics of a PN junction diode under the supervision of lecturer Hamed Kaghachi. The experiment measured the forward and reverse bias voltages and currents of the diode. In forward bias, the current increased exponentially with voltage from 0.01mA at 0.4V to 263mA at 14V. In reverse bias, the current remained near zero until -14V, where it reached -0.14mA.

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    of 6

    Ministry of Education of the Republic of Azerbaijan

    BAKU ENGINEERING UNIVERSITY


    Report
    Experiment No: 1
    Faculty/Institute:
    Speciality: Engineering
    Subject: Electronic Circuit 1
    Lecturer: Hamed Kaghachi
    Student: Rustam Aliyev
    Student ID: 210136029
    Experiment Name: PN JUNCTION DIODE CHARACTERISTICS
    Forward-Bias

    Es (Volts) Ef(Volts) If(mA)

    0.1 0.10 0.00

    0.2 0.20 0.00

    0.3 0.30 0.00

    0.4 0.40 0.01

    0.5 0.49 0.14

    0.6 0.57 0.68

    0.7 0.61 1.80

    0.8 0.64 3.27

    0.9 0.66 4.90

    1 0.67 6.62

    2 0.73 25.4

    4 0.77 64.5
    6 0.80 104

    8 0.88 144

    10 0.83 183

    12 0.84 223

    14 0.85 263

    Reverse - Bias
    Es (Volts) Er(Volts) Ir(mkA)

    0.1 -0.10 0.00

    0.2 -0.20 0.00

    0.3 -0.30 0.00

    0.4 -0.40 0.00


    0.5 -0.50 0.00

    0.6 -0.60 0.00

    0.7 -0.70 0.00

    0.8 -0.80 -0.01

    0.9 -0.90 -0.01

    1 -1.00 -0.01

    2 -2.00 -0.02

    4 -4.00 -0.04

    6 -6.00 -0.06

    8 -8.00 -0.08

    10 -10.00 -0.10

    12 -12.00 -0.12

    14 -14.00 -0.14

    Forward-bias
    Reverse-bias

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