curamik®

CERAMIC
SUBSTRATES
Product Information
Technical data sheet

Explore a new dimension of usability

curamik® CERAMIC SUBSTRATES Product Information curamik® Power curamik®
Available Power Plus
materials
Al2O3 ceramic based substrates Al2O3 Alumina HPS substrates
curamik®are enhanced
Power
are standard products with the HPS* in
Alumina (9% ZrO2 doped) robustness through Zr doped
curamik® Power Plus
Performance overview mal spreading of the thick copper cladding
best (127 – 800 ratio.
price performance Si3N4 Silicon Nitride Al O ceramic. They are
2 3 curamik® Performance mainly
µm) makes our substrates indispensable
They are to power
mainly elec-
used in applicati- used in applications of medium
AlN Aluminum Nitride curamik® Thermal
tronics. The mechanical stress on silicon
ons chips mounted
of medium and lower power power ranges, such as
directly on the substrate (Chip on Board)such
ranges, is very
as low, * The HPS products are subject to patent restrictions in some countries.
// Advanced Industrial
very high since the coefficient of thermal expansion (CTE) of
// General Power Electronics Applications
curamik® Thermal the ceramic substrate is better matched to the CTE of
// Concentrated Photovoltaics Thermal conductivity // Automotive Power Electronics
silicon compared to substrates using a metal or a plastic
Thermal conductivity

high (CPV)
basis. Rogers produces high temperature/high voltage Al2O3 24 W/mK @ 20°C
curamik® Performance (AMB) // Peltier Elements
substrates in a master card format that measures
medium HPS 26 W/mK @ 20°C
5“ x 7“ and 5.5“ x 7.5“. The individual parts can be left
curamik® Power Plus Si3N4 90 W/mK @ 20°C
curamik® Power in the master card format to support more efficient
CU Thin film CU Thick film
low assembly and mounting of components before being AlN 170 W/mK @ 20°C

curamik®
separated into Thermal
individual pieces. We also offer single curamik® Performance
very low PCB IMS pieces for single piece assembly.
Substrates based on AlN ceramics Substrates based on Si3N4 cera-
Available thickness combinations DBC
are used in applications with very mics are produced in an AMB pro-
very low low medium high very high Advantages: high operational voltages and copper
cess.thicknesses
They are mmmainly used in ap-
Ampacity highest power density, such as 0.127 0.2 plications
0.25 where
0.3 a long
0.4 lifetime,
0.5
// Great heat conductivity and temperature
resistance for high performance and high
// Traction AI203 AI203 high
AI203reliability,
AI203 and robustness
0.25
HPS HPS
are required HPS
and partial discharge
temperature applications // Smart Grid
curamik® high temperature/high voltage substrates consist of melting and diffusion process where the pure copper is bonded

ceramic thicknesses mm
AI203 notAIoccur,
should 203 such as
// High insulation voltage 0.32
pure copper bonded to a ceramic substrate such as Al2O3 (Alumi- onto the ceramic and AMB (active metal brazing) – a high tempe- // Industrial High Power HPS HPS HPS HPS HPS
// Automotive Power Electronics
na), AlN (Aluminum Nitride), HPS (ZrO2 doped) or silicon based rature process where the pure copper is brazed onto the ceramic // High heat spreading Modules 0.38 AI203 AI203 AI203 AI203
Si3N4 (Silicon Nitride). substrate. // High Reliability Power
// Adjusted coefficient of thermal
// expansion
Energy 0.5 AI203 AI203 AI203 AI203 AI203
Modules
curamik provides two technologies to attach the substrate The high heat conductivity of Al2O3 (24 W/mK), AlN (170 W/mK) between chip and substrate AI203 AI203 AI203 AI203
0.63 //AIN
Renewable
AIN AIN AIN Energy
with the copper. DBC (direct bond copper) – a high temperature and Si3N4 (90 W/mK) as well as the high heat capacity and ther- // Efficient processing of master cards and single pieces
AI203 AI203 AI203 AI203
1.00
AIN AIN AIN AIN
curamik®
curamik®CERAMIC
CERAMICSUBSTRATES
SUBSTRATESProduct
ProductInformation
Information Available
Availablematerials
materials Available
Availablethickness
thicknesscombinations
combinationsAMB
AMB Typ.
Typ.width
widthofof/ spacing
/ spacingbetween
betweenconductors
conductors
copper
copper
thicknesses
thicknesses
mmmm

ceramic thicknesses mm
ceramic thicknesses mm
AlAl
2O23O3 Alumina
Alumina curamik®
curamik®
Power
Power Cu-thickness
Cu-thickness width
widthDBC
DBC width
widthAMB
AMB
HPS*
HPS* Alumina
Alumina
(9%
(9%
ZrO
ZrO
2 doped)
2 doped) curamik®
curamik®
Power
Power
Plus
Plus 0.3
0.3 0.5
0.5 0.8
0.8 0.127
0.127
mmmm ≥ 0.35
≥ 0.35
mmmm n/a
n/a
Performance
Performanceoverview
overview mal
malspreading
spreading ofofthe
the
thick
thickcopper
copper cladding
cladding (127
(127– 800
– 800
Si3
SiN34N4 Silicon
Silicon
Nitride
Nitride curamik®
curamik®
Performance
Performance 0.2
0.2
mmmm ≥ 0.4
≥ 0.4
mmmm n/a
n/a
µm)
µm) makes
makes our
oursubstrates
substrates indispensable
indispensable totopower
power elec-
elec- 0.25
0.25 Si3
SiN34N4 Si3
SiN34N4
AlN
AlN Aluminum
Aluminum
Nitride
Nitride curamik®
curamik®
Thermal
Thermal 0.25
0.25
mmmm ≥ 0.45
≥ 0.45
mmmm n/a
n/a
tronics.
tronics. The
The mechanical
mechanical stress
stress onon silicon
silicon chips
chips mounted
mounted
directly
directly onon the
the substrate
substrate (Chip
(Chip onon Board)
Board) isis very
very low,
low, * The
* The
HPS
HPS
products
products
are
are
subject
subject
toto
patent
patent
restrictions
restrictions
in in
some
some
countries.
countries. 0.3
0.3
mmmm ≥ 0.5
≥ 0.5
mmmm 0.6
0.6
mmmm
0.32
0.32 Si3
SiN34N4 Si3
SiN34N4 Si3
SiN34N4
very
very
high
high since
sincethe
thecoefficient
coefficient ofofthermal
thermal expansion
expansion (CTE)
(CTE) ofof 0.4
0.4
mmmm ≥ 0.6
≥ 0.6
mmmm n/a
n/a

curamik®
curamik®
Thermal
Thermal the
the ceramic
ceramic substrate
substrate isis better
better matched
matched totothethe CTE
CTE ofof Note
Noteother
other
copper
copper
thicknesses
thicknesses
onon
request.
request. 0.5
0.5
mmmm ≥ 0.7
≥ 0.7
mmmm 1.01.0
mmmm
silicon
siliconcompared
compared toto
substrates
substrates using
usingaametal
metal oror
aa plastic
plastic Thermal
Thermalconductivity
conductivity
Thermal conductivity
Thermal conductivity

high
high 0.6
0.6
mmmm ≥ 0.8
≥ 0.8
mmmm n/a
n/a
basis.
basis. Rogers
Rogers produces
produces high
high temperature/high
temperature/high voltage
voltage
curamik®
curamik®
Performance
Performance
(AMB)
(AMB) AlAl
2O23O3 2424
W/mK
W/mK
@@20°C
20°C
substrates
substrates inin
aa master
master card
card format
format that
that measures
measures Coefficient
Coefficientofoflinear
linearthermal
thermalexpansion
expansion(CTE)
(CTE) 0.8
0.8
mmmm n/a
n/a 1.21.2
mmmm
medium
medium HPS
HPS 2626
W/mK
W/mK
@@20°C
20°C
5“5“ x 7“
x 7“ and
and 5.5“
5.5“ x 7.5“.
x 7.5“. TheThe individual
individual parts
parts cancanbebe left
left AlAl
curamik®
curamik®
Power
Power
Plus
Plus Si3
SiN34N4 9090
W/mK
W/mK
@@20°C
20°C 2O23O3 6.8
6.8 ppm/K
ppm/K @@ 20°C
20°C - 300°C
- 300°C
curamik®
curamik®
Power
Power inin the
the master
master card
card format
format toto support
support more
more efficient
efficient
CU
CUThin
Thinfilm
film CU
CUThick
Thickfilm
film HPS
HPS 7.1
7.1 ppm/K
ppm/K @@ 20°C
20°C - 300°C
- 300°C
low
low assembly
assembly and
and mounting
mounting ofof components
components before
before being
being AlN
AlN 170
170
W/mK
W/mK
@@20°C
20°C Surface
Surfaceoptions
options
separated
separated into
into individual
individual pieces.
pieces. WeWe also
also offer
offer single
single SiN34N4
Si3 2.5
2.5 ppm/K
ppm/K @@ 20°C
20°C - 300°C
- 300°C
Platings
Platings Electroless
Electroless Ni:Ni: 3 µm
3 µm – 7– µm
7 µm (8%
(8% ± 2%
± 2% P)P)all-over
all-over
very
very
low
low PCB
PCB IMS
IMS pieces
pieces for
for single
single piece
piece assembly.
assembly. AlN
AlN 4.7
4.7 ppm/K
ppm/K @@ 20°C
20°C - 300°C
- 300°C
Electroless
Electroless AgAg : 0.1
: 0.1 µmµm – 0.6
– 0.6 µmµmall-over
all-over
Available
Availablethickness
thicknesscombinations
combinationsDBC
DBC with
with
copper
copper
plating
plating
5%5%
toto
60%
60%
higher
higher
(dependent
(dependent
onon
copper
copper
thickness)
thickness)
Electroless
Electroless AuAu Class
Class A:A: 0.01
0.01 - 0.05
- 0.05 μmμm all-over
all-over onon
NiNi
very
very
low
low low
low medium
medium high
high very
very
high
high Advantages:
Advantages: copper
copper
thicknesses
thicknesses
mmmm
Electroless
Electroless AuAu Class
Class B:B: 0.03
0.03 - 0.13
- 0.13 μmμm all-over
all-over onon
NiNi
Ampacity
Ampacity 0.127
0.127 0.2
0.2 0.25
0.25 0.3
0.3 0.4
0.4 0.5
0.5
// //Great
Great heat
heat conductivity
conductivity and
and temperature
temperature General
Generaldimensions
dimensions Roughness
Roughness (DCB)*
(DCB)* RaR≤a3≤ µm;
3 µm;
RzR≤z16
≤ 16
µm;
µm;
Rmax
Rmax
= 50
= 50
µmµm
resistance
resistancefor
for
high
high
performance
performanceand
andhigh
high AIAI
202303 AIAI
202303 AIAI
202303 AIAI
202303
0.25
0.25 Roughness
Roughness(AMB)*
(AMB)* RaRa
≤ 1.5
≤ 1.5
μm;
μm;
RzRz
≤ 10
≤ 10
μm;
μm;
Rmax
Rmax
= 50
= 50
μmμm
HPS
HPS HPS
HPS HPS
HPS Total dimensions
Total dimensions 138 mm
138 x 190.5
mm mm
x 190.5 ± 1.5%
mm ± 1.5%
temperature
temperature applications
applications
curamik®
curamik® high
high
temperature/high
temperature/high voltage
voltagesubstrates
substrates consist
consist ofof melting
meltingand
anddiffusion
diffusionprocess
processwhere
wherethe
thepure
pure
copper
copperisis
bonded
bonded

ceramic thicknesses mm
ceramic thicknesses mm
AIAI
202303 AIAI
202303 master
mastercard
card * Lower
* Lower
roughness
roughness
onon
request
request
// //High
High insulation
insulation voltage
voltage 0.32
0.32
pure
purecopper
copperbonded
bonded toto
aaceramic
ceramic
substrate
substratesuch
suchasas
AlAl O O
2 23 3(Alumi-
(Alumi- onto
onto
the
theceramic
ceramicand
andAMB
AMB (active
(active
metal
metalbrazing)
brazing)
–a–a
high
hightempe-
tempe- HPS
HPS HPS
HPS HPS
HPS HPS
HPS HPS
HPS
Max.
Max.useable area
useable area 127 mm
127 x 178
mm mm
x 178 ± 0.05%
mm ± 0.05%
na),
na),
AlN
AlN(Aluminum
(Aluminum Nitride),
Nitride),
HPS
HPS(ZrO
(ZrO
22doped)
doped)oror
silicon
siliconbased
based rature
rature
process
process where
where the
the
pure
purecopper
copperisis
brazed
brazed
onto
onto
thethe
ceramic
ceramic // //High
High heat
heat spreading
spreading 0.38
0.38 AIAI
202303 AIAI
202303 AIAI
202303 AIAI
202303 Copper peeling
Copper peeling ≥ 4.0 N/mm
≥ 4.0 N/mm@@5050mm/min
mm/minforfor
DBC with
DBC with
SiSi
N N (Silicon
3 34 4 (Silicon
Nitride).
Nitride). substrate.
substrate. // //Adjusted
Adjusted coefficient
coefficient ofof thermal
thermal expansion
expansion 0.5
0.5 AIAI
202303 AIAI
202303 AIAI
202303 AIAI
202303 AIAI
202303 strength
strength 0.3 mm
0.3 mmCu-thickness
Cu-thickness
≥ 10.0 N/mm
≥ 10.0 N/mm@@ 5050
mm/min forfor
mm/min AMB
AMBwith
with
curamik
curamik provides
providestwo
twotechnologies
technologies
toto
attach
attachthe
the
substrate
substrate The
Thehigh
high
heat
heatconductivity
conductivity
ofof
AlAl between
between chip
chip and
and substrate
substrate
2O O3
23 (24
(24
W/mK),
W/mK),AlN
AlN(170
(170
W/mK)
W/mK) 0.63
0.63
AIAI
202303 AIAI
202303 AIAI
202303 AIAI
202303 0.5 mm
0.5 mmCu-thickness
Cu-thickness
AIN
AIN AIN
AIN AIN
AIN AIN
AIN
with
withthe
the
copper.
copper.
DBC
DBC(direct
(direct
bond
bond
copper)
copper)
– –a a
high
high
temperature
temperature and
andSiSi
3N N4
34 (90
(90
W/mK)
W/mK)asas
well
well
asas
the
the
high
high
heat
heat
capacity
capacityand
and
ther-
ther- // //Efficient
Efficient processing
processing ofof master
master cards
cards and
and single
single pieces
pieces
AIAI
202303 AIAI
202303 AIAI
202303 AIAI
202303
1.00
1.00
AIN
AIN AIN
AIN AIN
AIN AIN
AIN
curamik® CERAMIC SUBSTRATES Technical data sheet

Rogers Corporation
www.rogerscorp.com
www.curamik.com

The information contained in this document is intended to assist you in designing with Rogers’ Advanced Electronics Solutions
materials. It is not intended to and does not create any warranties, express or implied, including any warranty of merchantability
or fitness for a particular purpose or that the results shown in this document will be achieved by a user for a particular purpose.
The user should determine the suitability of Rogers curamik products for each application. The Rogers logo, the curamik logo and
curamik are trademarks of Rogers Corporation or one of its subsidiaries. © 2021 Rogers Corporation. All rights reserved.