NTMFS4937N

MOSFET – Power, Single,

N-Channel, SO-8 FL
30 V, 70 A
Features
• Low RDS(on) to Minimize Conduction Losses http://onsemi.com
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
V(BR)DSS RDS(ON) MAX ID MAX
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant 4.0 mW @ 10 V
30 V 70 A
Applications 6.0 mW @ 4.5 V
• CPU Power Delivery
• DC−DC Converters D (5,6)

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V G (4)
Gate−to−Source Voltage VGS ±20 V
Continuous Drain TA = 25°C ID 17.1 A
Current RqJA S (1,2,3)
(Note 1) TA = 100°C 10.9
N−CHANNEL MOSFET
Power Dissipation TA = 25°C PD 2.6 W
RqJA (Note 1) MARKING
Continuous Drain TA = 25°C ID 30 A DIAGRAM
Current RqJA ≤ 10 s
(Note 1) TA = 100°C 19 D
Power Dissipation TA = 25°C PD 8.1 W S D
RqJA ≤ 10 s (Note 1) S 4937N
Steady 1
S AYWZZ
Continuous Drain State TA = 25°C ID 10.2 A SO−8 FLAT LEAD
Current RqJA G D
TA = 100°C 6.5 CASE 488AA
(Note 2) D
STYLE 1
Power Dissipation TA = 25°C PD 0.92 W
RqJA (Note 2) A = Assembly Location
Y = Year
Continuous Drain TC = 25°C ID 70 A
Current RqJC W = Work Week
(Note 1) TC = 85°C 44 ZZ = Lot Traceability
Power Dissipation TC = 25°C PD 43 W
RqJC (Note 1)
Pulsed Drain TA = 25°C, tp = 10 ms IDM 210 A
Current ORDERING INFORMATION
Current Limited by Package TA = 25°C IDmax 100 A Device Package Shipping†
Operating Junction and Storage TJ, −55 to °C NTMFS4937NT1G SO−8 FL 1500 /
Temperature TSTG +150 (Pb−Free) Tape & Reel
Source Current (Body Diode) IS 40 A
NTMFS4937NT3G SO−8 FL 5000 /
Drain to Source DV/DT dV/dt 6.5 V/ns (Pb−Free) Tape & Reel
Single Pulse Drain−to−Source Avalanche EAS 68.5 mJ
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, †For information on tape and reel specifications,
IL = 37 Apk, L = 0.1 mH, RG = 25 W) including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Lead Temperature for Soldering Purposes TL 260 °C Brochure, BRD8011/D.
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

May, 2019 − Rev. 6 NTMFS4937N/D
 NTMFS4937N

2. Surface−mounted on FR4 board using the minimum recommended pad size.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 2.9
Junction−to−Ambient – Steady State (Note 3) RqJA 48
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 135
Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 14.8
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain−to−Source Breakdown Voltage V(BR)DSSt VGS = 0 V, ID(aval) = 15.5 A, 34 V
(transient) Tcase = 25°C, ttransient = 100 ns

Drain−to−Source Breakdown Voltage V(BR)DSS/ 15

mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0
VDS = 24 V mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.32 1.63 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ 4.0 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 3.2 4.0
ID = 15 A 3.2
mW
VGS = 4.5 V ID = 30 A 4.8 6.0
ID = 15 A 4.8
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 37 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS 2516
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 15 V 840 pF
Reverse Transfer Capacitance CRSS 25
Capacitance Ratio CRSS / VGS = 0 V, VDS = 15 V, f = 1 MHz 0.010 0.020
CISS

Total Gate Charge QG(TOT) 15.9

Threshold Gate Charge QG(TH) 4.0
VGS = 4.5 V, VDS = 15 V; ID = 30 A nC
Gate−to−Source Charge QGS 7.6
Gate−to−Drain Charge QGD 2.2
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 31 nC
SWITCHING CHARACTERISTICS (Note 6)
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4937N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON) 14.4
Rise Time tr VGS = 4.5 V, VDS = 15 V, 25
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 23.4
Fall Time tf 5.7
Turn−On Delay Time td(ON) 10.6
Rise Time tr VGS = 10 V, VDS = 15 V, 21.1
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 29.3
Fall Time tf 4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.88 1.1
V
IS = 30 A TJ = 125°C 0.78
Reverse Recovery Time tRR 39
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 19 ns
Discharge Time tb IS = 30 A 20
Reverse Recovery Charge QRR 35 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 0.93 nH
Drain Inductance LD 0.005 nH
TA = 25°C
Gate Inductance LG 1.84 nH
Gate Resistance RG 1.1 2.0 W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4937N

TYPICAL CHARACTERISTICS
140 120
10 V 4.2 V
VGS = 4.0 V TJ = 25°C VDS = 10 V
120 100
7V 3.8 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

100 4.5 V 3.6 V
80
3.4 V
80
3.2 V 60
60 TJ = 25°C
3.0 V 40
40
2.8 V
20 20 TJ = 125°C
2.4 V 2.6 V
TJ = −55°C
0 0
0 1 2 3 4 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.015 0.007
0.014 ID = 30 A TJ = 25°C
0.0065
0.013 TJ = 25°C
0.012 0.006
0.011
0.0055
0.010
VGS = 4.5 V
0.009 0.005
0.008
0.0045
0.007
0.006 0.004
0.005 VGS = 10 V
0.0035
0.004
0.003 0.003
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 30 40 50 60 70 80 90 100 110 120 130 14
VGS (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2 10,000
1.9 VGS = 0 V
RDS(on), DRAIN−TO−SOURCE RES-

1.8 ID = 30 A
1.7 VGS = 10 V TJ = 150°C
ISTANCE (NORMALIZED)

1.6
IDSS, LEAKAGE (nA)

1.5
1000
1.4 TJ = 125°C
1.3
1.2
1.1
1
0.9 100
0.8 TJ = 85°C
0.7
0.6
0.5
0.4 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

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 NTMFS4937N

TYPICAL CHARACTERISTICS

2800 11

VGS, GATE−TO−SOURCE VOLTAGE (V)

2600 Ciss 10 QT
2400 9 TJ = 25°C
2200
C, CAPACITANCE (pF)

2000 8
1800 VGS = 0 V 7
1600 TJ = 25°C 6
1400
Coss 5 Qgd
1200
1000 4
Qgs
800 3
600 2 VDD = 15 V
400 VGS = 10 V
1
200 Crss ID = 30 A
0 0
0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

1000 30
VDD = 15 V VGS = 0 V
ID = 15 A td(off) 25
IS, SOURCE CURRENT (A)

VGS = 10 V
100 tf 20
t, TIME (ns)

tr TJ = 125°C
15
td(on)
10 10

5
TJ = 25°C
1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 70
SOURCE AVALANCHE ENERGY (mJ)

ID = 37 A
EAS, SINGLE PULSE DRAIN−TO−

60
100
ID, DRAIN CURRENT (A)

10 ms 50

10 100 ms
40
1 ms
1 VGS = 20 V 30
Single Pulse 10 ms
TC = 25°C 20
0.1 RDS(on) Limit dc
Thermal Limit 10
Package Limit
0.01 0
0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

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 NTMFS4937N

TYPICAL CHARACTERISTICS

100

Duty Cycle = 50%

10
20%
10%
R(t) (°C/W)

5%
1 2%
1%

0.1

Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 13. Thermal Response

100
90
80
70
60
GFS (S)

50
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100
ID (A)
Figure 14. GFS vs. ID

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)
CASE 488AA
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B BURRS.
2X
D1 MILLIMETERS
0.20 C DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
4X b 0.33 0.41 0.51
E1 q c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
A q 0_ −−− 12 _

0.10 C GENERIC
SIDE VIEW MARKING DIAGRAM*
DETAIL A
1
b 8X XXXXXX
0.10 C A B
e/2 AYWZZ
0.05 c e
L
1 4 XXXXXX = Specific Device Code
A = Assembly Location
K
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
PIN 5 M 2X
(EXPOSED PAD) L1 0.495 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
1.530 Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
G D2 may not follow the Generic Marking.
2X
BOTTOM VIEW 0.475
3.200
4.530

STYLE 1: STYLE 2: 2X
1.330
PIN 1. SOURCE PIN 1. ANODE
2. SOURCE 2. ANODE
0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
4X
1.000 1.270
4X 0.750 PITCH
DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1

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