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Product
S T M4472
S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0

N- Channel Enhancement Mode Field Effect Transistor

P R ODUC T S UMMAR Y F E AT UR E S
S uper high dense cell design for low R DS (ON ).
V DS S ID R DS (ON) ( m ıΩ ) Max
R ugged and reliable.
24 @ V G S = 10V
40V 7A S urface Mount P ackage.
30 @ V G S = 4.5V
E S D P rotected.

S O-8
1

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)

P arameter S ymbol Limit Unit
Drain-S ource Voltage V DS 40 V
Gate-S ource Voltage V GS 20 V
a 25 C 7 A
Drain C urrent-C ontinuous @ Ta ID
70 C 5.9 A
b
-P ulsed IDM 28 A

Drain-S ource Diode Forward C urrent a IS 1.7 A

Ta= 25 C 3
Maximum P ower Dissipation a PD W
Ta=70 C 2.1
Operating Junction and S torage
T J , T S TG -55 to 150 C
Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-Ambient a R JA 40 C /W

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 S T M4472
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)

Parameter S ymbol Condition Min Typ C Max Unit

5 OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 40 V
Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA
Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1 1.8 3 V
V GS =10V, ID = 7A 18 24 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =4.5V, ID= 5A 23 30 m ohm
On-S tate Drain Current ID(ON) V DS = 5V, V GS = 10V 15 A
Forward Transconductance gFS V DS = 5V, ID = 7A 12.5 S
c
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance C IS S 700 PF
V DS =20 V, V GS = 0V
Output Capacitance C OS S 140 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 80 PF
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = 20V 13.4 ns
R ise Time tr ID = 1 A 12.5 ns
V GS = 10V
Turn-Off Delay Time tD(OFF) R GE N = 3.3 ohm 43.3 ns
Fall Time tf 8.5 ns
V DS =20V, ID =7A,V GS =10V 13.5 nC
Total Gate Charge Qg
V DS =20V, ID =7A,V GS =4.5V 6.7 nC
Gate-S ource Charge Q gs V DS =20V, ID = 7 A 1.8 nC
Gate-Drain Charge Q gd V GS =4.5V 2.4 nC

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 S T M4472
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
C
Parameter S ymbol Condition Min Typ Max Unit
5 DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage VSD V GS = 0V, Is =1.7A 0.78 1.2 V

Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
45 15
VG S =4.5V
VG S =10V
36 12
VG S =4V
ID , Drain C urrent(A)

I D , Drain C urrent (A)

-55 C

27 9
VG S =3.5V T j=125 C

18 6
25 C

9 VG S =3V 3

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.7 1.4 2.1 2.8 3.5 4.2

V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

48 1.75
R DS (ON) , On-R es is tance

40 1.60
V G S =10V
R DS (on) (m Ω)

32 1.45 I D =7A
Normalized

V G S =4.5V
24 1.30

16 V G S =10V 1.15 V G S =4.5V

I D =5A

8 1.00

1 0.85
1 4 8 12 16 20 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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S T M4472

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.6 1.15

1.4 V DS =V G S I D =250uA
1.10
I D =250uA

B V DS S , Normalized
V th, Normalized

1.2
1.05
1.0
1.00
0.8
0.95
0.6

0.4 0.90

0.2 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

60 20.0
I D =7A
50 125 C
Is , S ource-drain current (A)

10.0
R DS (on) (m Ω)

40
125 C
5.0
30

75 C
20 75 C 25 C
25 C
10

0 1.0
0 2 4 6 8 10 0 0.25 0.50 0.75 1.00 1.25

V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

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 S T M4472
1200 10

V G S , G ate to S ource V oltage (V )

V DS =20V
1000 8 I D =7A
C , C apacitance (pF )

800
C is s 6
600
5 4
400
C oss 2
200
C rs s
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 9. C apacitance F igure 10. G ate C harge

250 50
30 it
im
10 )L 10
ON
S witching T ime (ns )

I D , Drain C urrent (A)

ms
100 TD(off)
S(
Tr RD
60 10
0m
s
Tf TD(on)
1s
10 1 DC

V D S =20V ,ID=1A 0.1 V G S =10V

1 V G S =10V S ingle P ulse
T A =25 C
0.03
1 6 10 60 100 300 600 0.1 1 10 40

R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V )

F igure 11.s witching characteris tics F igure 12. Maximum S afe

O perating Area

1
Thermal Resistance

0.5

0.2
0.1
0.1 P DM
0.05
t1
t2
0.02
0.01 1. R thJ A (t)=r (t) * R thJ A
2. R thJ A =S ee Datas heet
0.01 Single Pulse 3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve

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S T M4472

PAC K AG E OUT LINE DIME NS IONS

S O-8

E
D

0.015X45±
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0± 8± 0± 8±

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S T M4472

SO-8 Tape and Reel Data

SO-8 Carrier Tape

unit:р
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
ӿ1.5
SOP 8N ӿ1.5 12.0 5.5 8.0 4.0 2.0 0.3
6.40 5.20 2.10 + 0.1 1.75
150п (MIN) ²0.3 ²0.05 ²0.05 ²0.05
- 0.0

SO-8 Reel

UNIT:р

TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 р 330 62 12.4 16.8 ӿ12.75 2.0

ӿ330
² 1 ²1.5 + 0.2 - 0.4 + 0.15 ²0.15