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Chapter One Basic Semiconductor Properties-1
Chapter One Basic Semiconductor Properties-1
Chapter One Basic Semiconductor Properties-1
(b)
(a)
• Figure a, shows Arsenic atom is added to the germanium atom, four of the valence
electrons get attached with the Ge atoms while one electron remains as a free electron.
• Figure b. shows the Boron atom is added to the germanium atom, three of the valence
electrons attached with the Ge atoms, to form three covalent bonds but, one more electron
in germanium remains without forming any bond because no electron in boron to form a
covalent bond with Ge and the space is remain treated as a hole.
Why Silicon is Preferred in Semiconductors?
Among the semiconductor materials like germanium and
silicon, the extensively used material for manufacturing
various electronic components is Silicon (Si). Silicon is
preferred over germanium for many reasons such as:
• The thermal pair generation is smaller.
• The formation of SiO2 layer is easy for silicon, which
helps in the manufacture of many components along
with integration technology.
• Si is easily found in nature than Ge.
• Noise is less in components made up of Si than in
Ge.
The main electronic components include
• Resistors and variable resistors,
• Capacitors and variable capacitors
• Inductors,
• diodes
• Tunnel diodes
• Varactor diodes
• Transistors: BJTs, FETs, MOSFETs,
• LDR
• LED
• Solar cells
• Thermistor
• Varistor
• Transformer
• Switches, etc.
The concentration (#/cm3) of conduction electrons
& holes in a semiconductor can be modulated
in several ways:
1. by adding special impurity atoms (
dopants )
2. by applying an electric field
3. by changing the temperature
4. by irradiation
Carrier Concentrations in Intrinsic Silicon
• The concentration of conduction electrons in
intrinsic silicon, ni, depends exponentially on energy
band gap (Eg) and the absolute temperature (T) and
given by
Eg
ni 5.2 10 T15 3/ 2
exp electrons / cm 3
2kT
• intrinsic semiconductor: n = p = ni
• extrinsic semiconductor: doped semiconductor