DATA SHEET

PHOTOCOUPLER

PS8701
HIGH NOISE REDUCTION HIGH-SPEED ANALOG OUTPUT TYPE
5-PIN SOP PHOTOCOUPLER

DESCRIPTION
The PS8701 is an optically coupled isolator containing a GaAlAs LED on the light emitting diode (input side) and a
PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
This is a plastic SOP (Small Out-line Package) type for high density applications.

FEATURES
• High common mode transient immunity (CMH, CML = ±10 kV/µs MIN.)
• High supply voltage (VCC = 35 V)
• High isolation voltage (BV = 2 500 Vr.m.s.)
• High-speed response (tPHL = 0.8 µs MAX., tPLH = 1.2 µs MAX.)
• Taping product number (PS8701-E3, E4, F3, F4)

APPLICATIONS
• Computer and peripheral manufactures
• General purpose inverter
• Substitutions for relays and pulse transformers
• Power supply

PACKAGE DIMENSIONS
in millimeters
4.5 MAX.
TOP VIEW
5 4 3

1. Anode
2. Cathode
3. GND
4. VO
5. VCC

1 2

7.0±0.3
4.4 1.3
0.15 +0.10
–0.05
2.3 MAX.
2.0

1.27 0.5±0.3
0.1±0.1

1.2 MAX.

0.4 +0.10
–0.05 0.25 M

The information in this document is subject to change without notice.

Document No. P12846EJ1V0DS00 (1st edition)

Date Published August 1997 NS
Printed in Japan © 1997
 PS8701

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)

Parameter Symbol Ratings Unit

Diode Forward Current IF 25 mA

Reverse Voltage VR 3.0 V

Power Dissipation PD 45 mW

Detector Supply Voltage VCC 35 V

Output Voltage VO 35 V

Output Current IO 8.0 mA

Power Dissipation PC 100 mW

*1
Isolation Voltage BV 2 500 Vr.m.s.

Operating Ambient Temperature TA –55 to +100 °C

Storage Temperature Tstg –55 to +125 °C

*1 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Diode Forward Voltage VF IF = 16 mA 1.7 2.2 V

Reverse Current IR VR = 3 V 10 µA
Forward Voltage ∆VF/∆T IF = 16 mA −1.6 mV/°C
Temperature Coefficient

Terminal Capacitance Ct V = 0 V, f = 1 MHz 60 pF

Detector High Level Output Current IOH (1) IF = 0 mA, VCC = VO = 5.5 V 3 500 nA

High Level Output Current IOH (2) IF = 0 mA, VCC = VO = 30 V 100 µA

Low Level Output Voltage VOL IF = 16 mA, VCC = 4.5 V, IO = 1.2 mA 0.1 0.4 V

Low Level Supply Current ICCL IF = 16 mA, VO = open, VCC = 30 V 50 µA

High Level Supply Current ICCH IF = 0 mA, VO = open, VCC = 30 V 0.01 2

Coupled Current Transfer Ratio CTR IF = 16 mA, VCC = 4.5 V, VO = 0.4 V 15 20 35 %

Isolation Resistance RI-O VI-O = 1 kVDC, RH = 40 to 60 % 10

11
Ω

Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF

Propagation Delay Time tPHL IF = 16 mA, VCC = 5 V, RL = 2.2 kΩ, 0.5 0.8 µs
(H → L)
*1
CL = 15 pF
Propagation Delay Time tPLH 0.6 1.2
(L → H)
*1

Common Mode CMH IF = 0 mA, VCC = 5 V, RL = 4.1 kΩ, 10 kV/µs

Transient Immunity at VCM = 1.5 kV
*2
High Level Output
Common Mode CML IF = 16 mA, VCC = 5 V, RL = 4.1 kΩ, −10
Transient Immunity at VCM = 1.5 kV
*2
Low Level Output

2
 PS8701

*1 Test circuit for propagation delay time

Input
Pulse input VCC = 5 V 50 %
0.1 µ F RL = 2.2 kΩ
(Pulse width = 100 µ s,
VO (Monitor)
Duty cycle = 1/10) 5V
CL = 15 pF
Input Output
(Monitor) 47 Ω 1.5 V
VOL
tPHL tPLH

CL is approximately 15 pF which includes probe and stray wiring capacitance

*2 Test circuit for common mode transient immunity

1.5 kV
VCM 90 %
IF VCC = 5 V
10 %
0.1 µ F RL = 4.1 kΩ 0V
VO (Monitor) tr tf

VO 5V
(IF = 0 mA) 2V

VCM 0.8 V
VO VOL
(IF = 16 mA)

USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. By-pase capacitor of more than 0.1 µF is used between VCC and GND near device.

3
 PS8701

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs. TRANSISTOR POWER DISSIPATION vs.

AMBIENT TEMPERATURE AMBIENT TEMPERATURE
50 120

Transistor Power Dissipation PC (mW)

Diode Power Dissipation PD (mW)

100
40

80
30
60
20
40

10
20

0 25 50 75 100 0 25 50 75 100

Ambient Temperature TA (˚C) Ambient Temperature TA (˚C)

FORWARD CURRENT vs. HIGH LEVEL OUTPUT CURRENT vs.

FORWARD VOLTAGE AMBIENT TEMPERATURE
100 1 000
IF = 0 mA
High Level Output Current IOH (nA)

TA = +100 ˚C
Forward Current IF (mA)

10 +50 ˚C 100
+25 ˚C
VCC = VO = 30 V
VCC = VO = 5.5 V
1 0 ˚C 10
–25 ˚C

0.1 1

0.01 0.1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 –25 0 25 50 75 100

Forward Voltage VF (V) Ambient Temperature TA (˚C)

CURRENT TRANSFER RATIO vs. NORMALIZED CURRENT TRANSFER

FORWARD CURRENT RATIO vs. AMBIENT TEMPERATURE
80 1.6
Normalized Current Transfer Raio CTR

VCC = 4.5 V, Normalized to 1.0

VO = 0.4 V
Current Transfer Ratio CTR (%)

70 1.4 at TA = 25 ˚C, IF = 16 mA,

VCC = 4.5 V, VO = 0.4 V
60
,,,,,,,,,,,,,,,,
1.2

,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
50 1.0

40

30
,,,,,,,,,,,,,,,,
0.8

,,,,,,,,,,,,,,,,
0.6

20 0.4

10 0.2

0 0.0
0.5 1 5 10 50 –50 –25 0 25 50 75 100

Forward Current IF (mA) Ambient Temperature TA (˚C)

4
 PS8701

OUTPUT CURRENT vs. OUTPUT VOLTAGE vs.

OUTPUT VOLTAGE FORWARD CURRENT
10 6

5
8
Output Current IO (mA)

Output Voltage VO (V)

IF = 25 mA
4
6 20 mA
3
15 mA
4 RL = 2.2 kΩ
10 mA 2

2 5 mA
1
5.6 kΩ

0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20

Output Voltage VO (V) Forward Current IF (mA)

PROPAGATION DELAY TIME vs. PROPAGATION DELAY TIME vs.

FORWARD CURRENT LOAD RESISTANCE
3.0 10
VCC = 5 V, VCC = 5 V,
Propagation Delay Time tPHL, tPLH (µs)

Propagation Delay Time tPHL, tPLH (µs)

RL = 2.2 kΩ IF = 16 mA

tPLH
2.0

1
tPHL
1.0 tPHL

tPLH
0.1
0 5 10 15 20 25 1k 10 k 100 k

Forward Current IF (mA) Load Resistance RL (Ω)

NORMALIZED PROPAGATION DELAY TIME

vs. AMBIENT TEMPERATURE
Normalized Propagation Delay Time tPHL, tPLH

5
Normalized to 1.0
at TA = 25 ˚C,
4 IF = 16 mA, VCC = 5 V,
RL = 2.2 kΩ

2
tPLH

tPHL
1

0
–50 –25 0 25 50 75 100

Ambient Temperature TA (˚C)

5
 PS8701

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

1.75±0.1
2.0±0.1
4.0±0.1 1.55±0.1 2.4±0.1

12.0±0.2
5.5±0.1

7.4±0.1
1.55±0.1 0.3
4.6±0.1
8.0±0.1

Taping Direction

PS8701-E3 PS8701-E4
PS8701-F3 PS8701-F4

Outline and Dimensions (Reel)

1.5±0.1
1.5±0.1

120
φ 21.0±0.8

˚
PS8701-E3, E4: φ 178
PS8701-F3, F4: φ 330

φ 13.0±0.5

2.0±0.5
φ 66

1.5±0.5

60 6.0±1
˚

12.4 +2.0
–0.0

18.4 MAX.
Packing: PS8701-E3, E4 900 pcs/reel
PS8701-F3, F4 3 500 pcs/reel

6
 PS8701

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

Package Surface Temperature T (˚C)

(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s

120 to 160 ˚C

60 to 90 s
(preheating)

Time (s)

Caution Please avoid to removed the residual flux by water after the first reflow processes.

Peak temperature 235 ˚C or below

(2) Dip soldering

• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)

7
 PS8701

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96. 5