Professional Documents
Culture Documents
El 19951478
El 19951478
-
wells, which is the dominant factor for compressive strained
coatings are deposited on the rear and front facets of the devices structures.
to increase the quantum eficiency and minimise the current con-
sumption at 6mW output facet power. Photoluminescence has
been determined to provide a lOnm negative detuning at room
temperature. The laser technology, based on a BRS structure 40
made with a standard 2in wafer process, has already been
described [4 - 51. The wafers are cleaved mto 3 0 0 long
and mounted p side up on an AlN submount.
15
~ lasers
m L
U. 20
5
E 10
L
6
,5
Cl
-
c
3
Q
2 5
-40 10
temperature ,"c
60