DG648BH45

DG648BH45
Gate Turn-off Thyristor

Replaces March 1998 version, DS4093-2.3 DS4093-3.0 January 2000

APPLICATIONS KEY PARAMETERS

■ Variable speed A.C. motor drive inverters (VSD-AC) ITCM 2000A
VDRM 4500V
■ Uninterruptable Power Supplies
IT(AV) 745A
■ High Voltage Converters dVD/dt 1000V/µs
■ Choppers diT/dt 300A/µs
■ Welding
■ Induction Heating
■ DC/DC Converters

FEATURES
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ High Surge Current Capability
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements

Outline type code: H.

See Package Details for further information.
VOLTAGE RATINGS

Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Conditions
VDRM VRRM
V V
DG648BH45 4500 16 Tvj = 125oC, IDM = 50mA,
IRRM = 50mA

CURRENT RATINGS

Symbol Parameter Conditions Max. Units

ITCM Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF 2000 A

IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 745 A

IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 1170 A

1/19

This datasheet has been downloaded from http://www.digchip.com at this page

DG648BH45

SURGE RATINGS

Symbol Parameter Conditions Max. Units

ITSM Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 16.0 kA

I2t I2t for fusing 10ms half sine. Tj =125oC 1.28 x 106 A2s

VD = 4500V, IT = 2000A, Tj = 125oC, IFG > 30A,

diT/dt Critical rate of rise of on-state current 300 A/µs
Rise time > 1.0µs

To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 175 V/µs

dVD/dt Rate of rise of off-state voltage
To 66% VDRM; VRG = -2V, Tj = 125oC 1000 V/µs

IT = 2000A, VDM = 4500V,- Tj = 125˚C,

LS Peak stray inductance in snubber circuit - 200 nH
diGQ/dt = 40A/µs, Cs = 2.0µF

GATE RATINGS

Symbol Parameter Conditions Min. Max. Units

VRGM Peak reverse gate voltage This value maybe exceeded during turn-off - 16 V

IFGM Peak forward gate current 20 100 A

PFG(AV) Average forward gate power - 15 W

PRGM Peak reverse gate power - 19 kW

diGQ/dt Rate of rise of reverse gate current 30 60 A/µs

tON(min) Minimum permissable on time 50 - µs

tOFF(min) Minimum permissable off time 100 - µs

THERMAL RATINGS AND MECHANICAL DATA

Symbol Parameter Conditions Min. Max. Units

o
Double side cooled - 0.018 C/W

o
Rth(j-hs) DC thermal resistance - junction to heatsink Anode side cooled - 0.03 C/W
surface
o
Cathode side cooled - 0.045 C/W

Clamping force 20.0kN o

Rth(c-hs) Contact thermal resistance per contact - 0.006 C/W
With mounting compound
o
Tvj Virtual junction temperature - 125 C

o
TOP/Tstg Operating junction/storage temperature range -40 125 C

- Clamping force 18.0 22.0 kN

2/19
 DG648BH45

CHARACTERISTICS

Tj = 125oC unless stated otherwise

Symbol Parameter Conditions Min. Max. Units

VTM On-state voltage At 2000A peak, IG(ON) = 7A d.c. - 3.2 V

IDM Peak off-state current VDRM = 4500V, VRG = 0V - 100 mA

IRRM Peak reverse current At VRRM - 50 mA

VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.0 V

IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 3.0 A

IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA

EON Turn-on energy VD = 3000V - 3170 mJ

td Delay time IT = 2000A, dIT/dt = 300A/µs - 1.35 µs

tr Rise time IFG = 30A, rise time < 1.0µs - 3.2 µs

EOFF Turn-off energy - 10000 mJ

tgs Storage time - 20.0 µs

tgf Fall time IT = 2000A, VDM = VDRM - 2.0 µs

tgq Gate controlled turn-off time Snubber Cap Cs = 2.0µF, - 22.0 µs

QGQ Turn-off gate charge diGQ/dt = 40A/µs - 6000 µC

QGQT Total turn-off gate charge - 12000 µC

IGQM Peak reverse gate current - 690 A

3/19
DG648BH45

CURVES

2.0 8.0

Gate trigger voltage VGT - (V) 1.5 6.0

Gate trigger current IGT - (A)

1.0 4.0

VGT

0.5 2.0

IGT

0 0
-50 -25 0 25 50 75 100 125 150
Junction temperature Tj - (˚C)

Fig.1 Maximum gate trigger voltage/current vs junction temperature

4000
Measured under pulse conditions.
IG(ON) = 7A
Instantaneous on-state current ITM - (A)

Half sine wave 10ms

Tj = 125˚C
3000
Tj = 25˚C

2000

1000

0
0 1.0 2.0 3.0 4.0 5.0
Instantaneous on-state voltage VTM - (V)

Fig.2 On-state characteristics

4/19
 DG648BH45

3000
Conditions:
Tj = 125˚C, VDM = VDRM,

Maximum permissible turn-off

dIGQ/dt = 40A/µs

current ITCM - (A)

2000

1000

0
0 1.0 2.0 3.0 4.0
Snubber capacitance CS - (µF)
Fig.3 Maximum dependence of ITCM on CS

0.020
dc
Thermal impedance - ˚C/W

0.015

0.010

0.005

0
0.001 0.01 0.1 1.0 10
Time - (s)
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)

40

30

20

10

0
0.0001 0.001 0.01 0.1 1.0
Pulse duration - (s)
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
DG648BH45

4000
Conditions:
IG(ON) = 7A
Mean on-state power dissipation - (W)

3000 dc

180˚
120˚
2000
60˚
30˚

1000

0
0 500 1000 1500 70 80 90 100 120 130
Mean on-state current IT(AV) - (A) Maximum permissible case
temperature - (˚C)

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

3000
Mean on-state power dissipation - (W)

Conditions:
IG(ON) = 7A
180˚
120˚
2000
90˚
60˚
30˚

1000

0
0 200 400 600 800 1000 1200 1400 80 90 100 120 130
Mean on-state current IT(AV) - (A) Maximum permissible case
temperature - (˚C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

6/19
 DG648BH45

4000
Conditions:
Tj = 25˚C, IFGM = 30A,
CS = 2.0µF,
dI/dt = 300A/µs, VD = 3000V
Turn-on energy loss EON - (mJ)

3000 dIFG/dt = 30A/µs

2000 VD = 2000V

1000
VD = 1000V

0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)

Fig.8 Turn-on energy vs on-state current

5000
Conditions:
Tj = 25˚C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
4000 dIFG/dt = 30A/µs
Turn-on energy loss EON - (mJ)

3000
VD = 3000V

2000
VD = 2000V

1000
VD = 1000V

0
0 20 40 60 80
Peak forward gate current IFGM - (A)
Fig.9 Turn-on energy vs peak forward gate current

7/19
DG648BH45

4000
Conditions:
Tj = 125˚C, IFGM = 30A,
CS = 2.0µF,
RS = 10Ω, VD = 3000V
Turn-on energy loss EON - (mJ)

3000 dIT/dt = 300A/µs,

dIFG/dt = 30A/µs,

VD = 2000V
2000

1000
VD = 1000V

0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)
Fig.10 Turn-on energy vs on-state current

5000
Conditions:
Tj = 125˚C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms 4000
dI/dt = 300A/µs, Conditions:
4000 dIFG/dt = 30A/µs IT = 2000A,
Tj = 125˚C, VD = 3000V
CS = 2.0µF
Turn-on energy loss EON - (mJ)

Turn-on energy loss EON - (mJ)

3000 RS = 10 Ohms
IFGM = 30A,
3000 VD = 3000V dIFG/dt = 30A/µs
VD = 2000V

2000

2000 VD = 2000V

1000 VD = 1000V

1000 VD = 1000V

0
0 100 200 300
0 Rate of rise of on-state current dIT/dt - (A/µs)
0 20 40 60 80
Peak forward gate current IFGM - (A)

Fig.11 Turn-on energy vs peak forward gate current Fig.12 Turn-on energy vs rate of rise of on-state current

8/19
 DG648BH45

4.0
Turn-on delay and rise time - (µs)

tr
3.0

2.0

td
1.0
Conditions: Tj = 125˚C, IFGM = 30A,
CS = 2.0µF, VD = 3000V,
RS = 10Ω, dIT/dt = 300A/µs,
dIFG/dt = 30A/µs,
0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)
Fig.13 Delay time & rise time vs turn-on current

8.0
Conditions:
Tj = 125˚C, IT = 2000A,
Turn-on delay time and rise time - (µs)

CS = 2.0µF,
RS = 10 Ohms,
6.0 dI/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 3000V

4.0

2.0
tr
td

0
0 20 40 60 80
Peak forward gate current IFGM - (A)
Fig.14 Delay time & rise time vs peak forward gate current

9/19
DG648BH45

5000
Conditions: VDRM
Tj = 25˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
4000 0.75x VDRM
Turn-off energy loss EOFF - (mJ)

3000
0.5x VDRM

2000

1000

0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)
Fig.15 Turn-off energy vs on-state current

6000
Conditions:
Tj = 25˚C,
CS = 2.0µF, VDRM
Turn-off energy per pulse EOFF - (mJ)

IT = 2000A
5000

0.75x VDRM

4000

0.5x VDRM
3000

2000
20 30 40 50 60 70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current

10/19
 DG648BH45

10000
Conditions: VDRM
Tj = 125˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
8000 0.75x VDRM
Turn-off energy loss EOFF - (mJ)

6000
0.5x VDRM

4000

2000

0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)
FIG 17Fig.17
TURNTurn-off
OFF ENERGY ON STATE CURRENT
energy vs on-state current

12000
Conditions:
Tj = 125˚C,
CS = 2.0µF,
Turn-off energy per pulse EOFF - (mJ)

VDRM
IT = 2000A
10000

0.75x VDRM
8000

6000 0.5x VDRM

4000
20 30 40 50 60 70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current

11/19
DG648BH45

8000
Conditions: CS = 2.0µF
Tj = 125˚C,
VDM = 0.75x VDRM,
Turn-off energy per pulse EOFF - (mJ)

CS = 4.0µF
dIGQ/dt = 40A/µs
6000

4000

2000

0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)
Fig.19 Turn-off energy vs on-state current

20.0
Conditions: Tj = 125˚C
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 25˚C
15.0
Gate storage time tgs - (µs)

10.0

5.0

0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)
Fig.20 Gate storage time vs on-state current

12/19
 DG648BH45

30
Conditions:
CS = 2.0µF,
IT = 2000A

25
Gate storage time tgs - (µs)

20
Tj = 125˚C

15
Tj = 25˚C

10
20 30 40 50 60 70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current

2.0
Conditions: Tj = 125˚C
CS = 2.0µF,
dIGQ/dt = 40A/µs

1.5
Tj = 25˚C
Gate fall time tgf - (µs)

1.0

0.5

0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)
Fig.22 Gate fall time vs on-state current

13/19
DG648BH45

2.5
Conditions:
CS = 2.0µF,
IT = 2000A
Tj = 125˚C
2.0
Gate fall time tgf - (µs)

1.5
Tj = 25˚C

1.0

0.5
20 30 40 50 60 70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.23 Gate fall time vs rate of rise of reverse gate current

800
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs Tj = 125˚C
Peak reverse gate current IGQM - (A)

600 Tj = 25˚C

400

200

0
0 500 1000 1500 2000 2500 3000
Turn-off current IT - (A)
Fig.24 Peak reverse gate current vs turn-off current

14/19
 DG648BH45

750
Conditions:
CS = 2.0µF,
Tj = 125˚C
IT = 2000A

700
Peak reverse gate current IGQM - (A)

650

Tj = 25˚C

600

550

500
20 30 40 50 60 70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current

8000
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Total turn-off charge QGQ - (µC)

Tj = 125˚C
6000

Tj = 25˚C
4000

2000

0
0 500 1000 1500 2000 2500 3000
On-state current IT - (A)
Fig.26 Turn-off gate charge vs on-state current

15/19
DG648BH45

7000
Conditions:
CS = 2.0µF,
IT = 2000A
Turn-off gate charge QGQ - (µC)

6000
TJ = 125˚C

5000

Tj = 25˚C
4000

3000
20 30 40 50 60 70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
Rate of rise of off-state voltage dV/dt

1000
Tj = 125˚C
- (V/µs)

500
VD = 2250V

VD = 3000V

0
0.1 1.0 10 100 1000
Gate cathode resistance RGK - (Ohms)
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance

16/19
 DG648BH45

0.9VD 0.9IT
Anode voltage and current

dVD/dt
VD IT VD VDM

ITAIL
0.1VD VDP

td tr tgs
tgf
tgt

dIFG/dt tgq
IFG
Gate voltage and current

VFG
0.1IFG IG(ON)

0.1IGQ
VRG
tw1 QGQ
0.5IGQM
V(RG)BR
IGQM

Recommended gate conditions:

ITCM = 2000A
IFG = 30A
IG(ON) = 7A d.c.
tw1(min) = 20µs
IGQM = 690A
diGQ/dt = 40A/µs
QGQ = 6000µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms

17/19
DG648BH45

PACKAGE DETAILS
For further package information, please contact Customer Service. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode)

Cathode Aux. Tube

Gate Tube 15˚

52
Anode
Ø100
Ø62.85

26 ± 0.5

9.6

Ø62.85 Cathode
55

Nominal weight: 820g

Clamping force: 20kN ±10%
Lead length: 505mm

Package outine type code: H

18/19
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.

http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com

HEADQUARTERS OPERATIONS CUSTOMER SERVICE

DYNEX SEMICONDUCTOR LTD Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom. SALES OFFICES
Tel: +44-(0)1522-500500 Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
Fax: +44-(0)1522-500550 France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM

Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

www.dynexsemi.com