AP4N2R1MT-V1

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ 100% Rg & UIS Test D BVDSS 40V

▼ Simple Drive Requirement RDS(ON) 1.6mΩ
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free G
S D
D
Description D
D
AP4N2R1 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications. S
S
S
® G ®
The PMPAK 5x6 package is special for DC-DC converters PMPAK 5x6
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.

o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol Parameter . Rating Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage +20 V
4
ID@TC=25℃ Drain Current, VGS @ 10V (Silicon Limited) 170 A
4
ID@TC=25℃ Drain Current, VGS @ 10V 100 A
3
ID@TA=25℃ Drain Current, VGS @ 10V 37.5 A
3
ID@TA=70℃ Drain Current, VGS @ 10V 21 A
1
IDM Pulsed Drain Current 300 A
PD@TC=25℃ Total Power Dissipation 104 W
3
PD@TA=25℃ Total Power Dissipation 5 W
5
EAS Single Pulse Avalanche Energy 125 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 ℃/W

1
201911291
AP4N2R1MT-V1
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A - - 1.6 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=5V, ID=20A - 95 - S
IDSS Drain-Source Leakage Current VDS=32V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
Qg Total Gate Charge ID=20A - 96 154 nC
Qgs Gate-Source Charge VDS=20V - 22 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 22 - nC
td(on) Turn-on Delay Time VDS=20V - 20 - ns
tr Rise Time ID=20A - 53 - ns
td(off) Turn-off Delay Time RG=1.6Ω - 44 - ns
tf Fall Time VGS=10V - 15 - ns
Ciss Input Capacitance VGS=0V - 5660 9056 pF
Coss Output Capacitance VDS=20V - 725 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 300 - pF
Rg Gate Resistance .
f=1.0MHz - 1.3 2.6 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Source Current ( Body Diode ) - - 100 A
2
VSD Forward On Voltage IS=20A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=20A, VGS=0V - 27 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2 o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
4.Package limitation current is 100A .
o
5.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP4N2R1MT-V1

320 200

o
T C =25 C 10V T C = 150 o C 10V
8.0V 8.0V
7.0V 160 7.0V
240 6.0V 6.0V
ID , Drain Current (A)

ID , Drain Current (A)

V G = 5.0V V G = 5.0V
120

160

80

80
40

0 0
0 2 4 6 8 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

7.5 2.0

I D = 20 A I D =20A
T C =25 C o V G =10V
6.5
1.6
Normalized RDS(ON)

5.5
RDS(ON) (mΩ)

1.2

.
4.5

0.8

3.5

0.4
2.5

1.5
0.0
2 4 6 8 10 -100 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100 2.0

I D =250uA

1.6
Normalized VGS(th)

10
IS(A)

1.2

T j =150 o C T j =25 o C

0.8

0.4

0.1 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP4N2R1MT-V1

f=1.0MHz
12 10000

I D = 20 A
10
V DS =20V
8000
VGS , Gate to Source Voltage (V)

C (pF)
6000

C iss
6

4000

2000
2
C oss
C rss
0 0
0 20 40 60 80 100 120 1 11 21 31 41 51

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor=0.5
Normalized Thermal Response (Rthjc)

Operation in this 0.2

100 area limited by
R
0.1 0.1

0.05
ID (A)

.
10
0.02

100us 0.01
P
0.01 Single Pulse t
T
1
1ms Duty factor = t/T
Peak T = P x R +T
T C =25 o C
10ms
Single Pulse DC
0.1 0.001
0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

200 200

V DS =5V

160 160
ID , Drain Current (A)
ID , Drain Current (A)

120 120
Limited by package

80 80

T j =150 o C

40
T j =25 o C
40

o
T j = -55 C
0 0
25 50 75 100 125 150 0 2 4 6 8

o
T C , Case Temperature ( C) V GS , Gate-to-Source Voltage (V)

Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics
Temperature

4
 AP4N2R1MT-V1

20 120

o
T j =25 C
100
16

PD, Power Dissipation(W)

RDS(ON) (mΩ)

80

12

60

40

4
V GS =10V 20

0 0
0 20 40 60 80 100 120 0 50 100 150

I D , Drain Current (A) T C , Case Temperature( C)o

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation
Resistance
2

I D =1mA

1.6
Normalized BVDSS

1.2

0.8
.

0.4

0
-100 -50 0 50 100 150

o
T j , Junction Temperature ( C)

Fig 15. Normalized BVDSS v.s. Junction

5
AP4N2R1MT-V1
MARKING INFORMATION

Part Number

4N2R1

YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year
WW：Week
SSS：Sequence