Si photodiodes

S1337 series

For UV to IR, precision photometry

These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis
and the like.

Features Applications

High UV sensitivity: QE 75% (λ=200 nm) Analytical equipment

Low capacitance Optical measurement equipment

Structure / Absolute maximum ratings

Absolute maximum ratings
Effective
Photosensitive Reverse Operating Storage
Window Package photosensitive
Type no. area size voltage temperature temperature
material area
VR max Topr Tstg
(mm) (mm) (mm2) (V) (°C) (°C)
S1337-16BQ* Quartz
2.7 × 15 1.1 × 5.9 5.9
S1337-16BR Resin potting
S1337-33BQ* Quartz
6 × 7.6 2.4 × 2.4 5.7
S1337-33BR Resin potting
-20 to +60 -20 to +80
S1337-66BQ* Quartz 5
8.9 × 10.1 5.8 × 5.8 33
S1337-66BR Resin potting
S1337-1010BQ* Quartz
15 × 16.5 10 × 10 100
S1337-1010BR Resin potting
S1337-21* Unsealed 25.5 × 25.5 18 × 18 324 0 to +60 0 to +80
* Refer to “Precautions against UV light exposure.”
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Short circuit
Photosensitivity Dark Temp. Terminal
Spectral Peak current Rise time Shunt Noise
S current coefficient capacitance
response sensitivity Isc tr resistance equivalent
(A/W) ID of Ct
range wavelength 100 lx VR=0 V Rsh power
Type no. VR=10 mV ID VR=0 V
λ λp RL=1 kΩ VR=10 mV NEP
200 nm He-Ne GaAs Min. Typ. Max. TCID f=10 kHz
laser LED
λp
633 930 Min. Typ.
(nm) Min. Typ. nm nm (μA) (μA) (pA) (times/°C)
(nm) (μs) (pF) (GΩ) (GΩ) (W/Hz1/2)
S1337-16BQ 190 to 1100 0.5 0.10 0.12 0.33 0.5 4.0 5.3 1.0 × 10-14
50 0.2 65 0.2 0.6
S1337-16BR 340 to 1100 0.62 - - 0.4 0.6 4.4 6.2 8.4 × 10-15
S1337-33BQ 190 to 1100 0.5 0.10 0.12 0.33 0.5 4.0 5.0 8.1 × 10-15
30 0.2 65 0.3 1
S1337-33BR 340 to 1100 0.62 - - 0.4 0.6 4.4 6.2 6.5 × 10-15
S1337-66BQ 190 to 1100 960 0.5 0.10 0.12 0.33 0.5 20 27 1.15 1.3 × 10-14
100 1 380 0.1 0.4
S1337-66BR 340 to 1100 0.62 - - 0.4 0.6 22 33 1.0 × 10-14
S1337-1010BQ 190 to 1100 0.5 0.10 0.12 0.33 0.5 65 78 1.8 × 10-14
200 3 1100 0.05 0.2
S1337-1010BR 340 to 1100 0.62 - - 0.4 0.6 70 95 1.5 × 10-14
S1337-21 190 to 1100 0.52 0.10 0.13 0.34 0.51 200 250 500 8 4000 0.02 0.1 2.5 × 10-14

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 Si photodiodes S1337 series

Spectral response
S1337BQ series, S1337-21 S1337-BR series

(Typ. Ta=25 °C) (Typ. Ta=25 °C)

0.7 0.7

0.6 0.6
S1337-21

Photosensitivity (A/W)
Photosensitivity (A/W)

0.5 0.5

0.4 0.4

0.3 0.3

S1337-BQ series
0.2 0.2

0.1 0.1

0 0
190 400 600 800 1000 190 400 600 800 1000

Wavelength (nm) Wavelength (nm)

KSPDB0102ED KSPDB0306EA

Photosensitivity temperature characteristics Dark current vs. reverse voltage

(Typ. ) (Typ. Ta=25 °C)

+1.5 10 nA

S1337-66BQ/BR
Temperature coefficient (%/°C)

1 nA
+1.0
S1337-21 S1337-1010BQ/BR
Dark current

100 pA

+0.5
S1337-16BQ/BR
10 pA
S1337-33BQ/BR

0
1 pA

-0.5 100 fA
190 400 600 800 1000 0.01 0.1 1 10

Wavelength (nm) Reverse voltage (V)

KSPDB0104EC
KSPDB0053EB

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 Si photodiodes S1337 series

Dimensional outlines (unit: mm)

S1337-16BQ S1337-16BR

2.7 ± 0.1
Hole

2.7 ± 0.1
Hole
(2 ×) 0.8 (2 ×) 0.8

Photosensitive
Photosensitive area
area 1.1 × 5.9
1.1 × 5.9

Photosensitive
Quartz window 15 ± 0.15 surface
Photosensitive 15 ± 0.15

1.5 ± 0.1
13.5 ± 0.13 Resin
surface
1.5 ± 0.1

12.2 13.5 ± 0.13

0.45
0.95

0.5

6.2
6.2

0.5
0.5 Lead Anode terminal mark
Lead Anode terminal mark
8.5 ± 0.2
8.5 ± 0.2

The resin potting may extend a

maximum of 0.1 mm above the
upper surface of the package.
KSPDA0106EB

KSPDA0105EB

S1337-33BQ S1337-33BR

Photosensitive 7.6 ± 0.1 Photosensitive 7.6 ± 0.1

area area
2.4 × 2.4 2.4 × 2.4
6.0 ± 0.1
6.0 ± 0.1

Quartz window Photosensitive

surface
Photosensitive
2.0 ± 0.1

Resin
2.0 ± 0.1

surface
0.75
0.85

0.35
0.1
0.35

10.5

0.5
10.5

0.5 Lead
Lead

6.6 ± 0.3
6.6 ± 0.3
5.0 ± 0.3
5.0 ± 0.3

4.5 ± 0.2
4.5 ± 0.2 Anode
Anode
terminal mark
terminal mark

The resin potting may extend a

maximum of 0.1 mm above the
upper surface of the package.
KSPDA0108EB
KSPDA0107EB

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 Si photodiodes S1337 series

S1337-66BQ S1337-66BR

Photosensitive 10.1 ± 0.1 Photosensitive 10.1 ± 0.1

area area
5.8 × 5.8 5.8 × 5.8

8.9 ± 0.1

8.9 ± 0.1
Quartz window Photosensitive
surface
Photosensitive

2.0 ± 0.1
surface 2.0 ± 0.1 Resin

0.75
0.85

0.1

0.3
0.3

10.5
10.5

0.5 0.5
Lead Lead

9.2 ± 0.3 9.2 ± 0.3

7.4 ± 0.2
7.4 ± 0.2
Anode Anode
terminal mark terminal mark

8.0 ± 0.3
8.0 ± 0.3

The resin potting may extend a

maximum of 0.1 mm above the
upper surface of the package.
KSPDA0110EB
KSPDA0109EB

S1337-1010BQ S1337-1010BR

Photosensitive 16.5 ± 0.2 Photosensitive 16.5 ± 0.2

area area
10 × 10 10 × 10
15.0 ± 0.15

15.0 ± 0.15

Quartz window Photosensitive

surface
2.15 ± 0.1

2.15 ± 0.1

Photosensitive
surface Resin
0.1
1.0

0.9
0.3

0.3

10.5
10.5

0.5
Lead 0.5
Lead

15.1 ± 0.3 15.1 ± 0.3

12.5 ± 0.2 12.5 ± 0.2

Anode Anode
terminal mark terminal mark
13.7 ± 0.3

13.7 ± 0.3

The resin potting may extend a

maximum of 0.1 mm above the
upper surface of the package.
KSPDA0111EB KSPDA0112EB

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 Si photodiodes S1337 series

S1337-21

+0
25.5 - 0.6
3.4

25.5 - 0.6
+0
Photosensitive
area
18 × 18

White ceramic
2.54 ± 0.2

Photosensitive
surface
1.2

10

ȁ0.45
White ceramic Lead

1.75
5.0 ± 0.2

KSPDA0190EA

Precautions against UV light exposure

∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV
sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time,
and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you
check the tolerance under the ultraviolet light environment that the product will be used in.
∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component
materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the
photosensitive area by using an aperture or the like.

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 Si photodiodes S1337 series

Related information
www.hamamatsu.com/sp/ssd/doc_en.html

Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic package products

Technical information
∙ Si photodiode/Application circuit examples

Information described in this material is current as of October, 2015.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
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Cat. No. KSPD1032E07 Oct. 2015 DN