2SJ567

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)

2SJ567
Industrial Applications
Switching Applications
Unit: mm
Chopper Regulator, DC-DC Converter and
Motor Drive Applications

· Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)

· High forward transfer admittance: |Yfs| = 2.0 S (typ.)
· Low leakage current: IDSS = −100 µA (max) (VDS = −200 V)
· Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS -200 V

Drain-gate voltage (RGS = 20 kW) VDGR -200 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID -2.5
Drain current A
Pulse (Note 1) IDP -10 JEDEC ―
Drain power dissipation (Tc = 25°C) PD 20 W
JEITA SC-64
Single pulse avalanche energy
EAS 97.5 mJ TOSHIBA 2-7B1B
(Note 2)
Avalanche current IAR -2.5 A Weight: 0.36 g (typ.)
Repetitive avalanche energy (Note 3) EAR 2.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W

Note 1: Please use devices on condition that the channel temperature

is below 150°C.

Note 2: VDD = -50 V, Tch = 25°C (initial), L = -25.2 mH, IAR = -2.5 A
RG = 25 W,

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

This transistor is an electrostatic sensitive device. Please handle with JEDEC ―

caution.
JEITA SC-64
TOSHIBA 2-7J1B

Weight: 0.36 g (typ.)

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 2SJ567
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA

Drain cut-off current IDSS VDS = -200 V, VGS = 0 V ¾ ¾ -100 mA
Drain-source breakdown voltage V (BR) DSS ID = -10 mA, VGS = 0 V -200 ¾ ¾ V
Gate threshold voltage Vth VDS = -10 V, ID = -1 mA -1.5 ¾ -3.5 V
Drain-source ON resistance RDS (ON) VGS = -10 V, ID = -1.5 A ¾ 1.6 2.0 W
Forward transfer admittance ïYfsï VDS = -10 V, ID = -1.5 A 1.0 2.0 ¾ S
Input capacitance Ciss ¾ 410 ¾
Reverse transfer capacitance Crss VDS = -10 V, VGS = 0 V, f = 1 MHz ¾ 40 ¾ pF

Output capacitance Coss ¾ 145 ¾

Rise time tr ¾ 20 ¾
0V ID = -1.5 A VOUT
VGS
-10 V
Turn-on time ton ¾ 45 ¾
RL = 66.7 W
Switching time ns
Fall time tf 50 9 ¾ 15 ¾
VDD ~
- -100 V
Duty <
= 1%, tw = 10 ms
Turn-off time toff ¾ 85 ¾

Total gate charge

Qg ¾ 10 ¾
(Gate source plus gate-drain) VDD ~
- -160 V, VGS = -10 V,
nC
Gate-source charge Qgs ID = -2.5 A ¾ 6 ¾
Gate-drain (“Miller”) charge Qgd ¾ 4 ¾

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ¾ ¾ ¾ -2.5 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP ¾ ¾ ¾ -10 A
Forward voltage (diode) VDSF IDR = -2.5 A, VGS = 0 V ¾ ¾ 2.0 V
Reverse recovery time trr IDR = -2.5 A, VGS = 0 V, ¾ 135 ¾ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/ms ¾ 0.81 ¾ mC

Marking

※ Lot Number
J567 Type

※ Month (starting from alphabet A)

Year (last number of the christian era)

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 2SJ567

ID – VDS ID – VDS
-2.0 -5
Common source -8 -6 -5 -4.8 -6 Common source
-10 Tc = 25°C, Pulse test
Tc = 25°C
-10 -8
Pulse test
-1.6 -4 -15 -5.75
-15 -4.6 -5.5
(A)

(A)
-5.25
ID

ID
-1.2 -3
-4.4
-5
Drain current

Drain current
-0.8 -4.2 -2 -4.8

-4.6
VGS = -4 V
-4.4
-0.4 -1 -4.2

VGS = -4 V
0 0
0 -1 -2 -3 -4 -5 0 -10 -20 -30 -40 -50

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

-10 -10
Common source Tc = -55°C Common source
VDS = -10 V Tc = 25°C
(V)

-8 Pulse test -8
Pulse test
(A)

VDS
ID

-6 25 -6
Drain-source voltage
Drain current

ID = -2.5 A
-4 100 -4

-1.5
-2 -2
-0.8

0 0
0 -2 -4 -6 -8 -10 0 -4 -8 -12 -16 -20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

ïYfsï – ID RDS (ON) – ID

10 10
Common source Common source
(S)

VDS = -10 V Tc = 25°C

Pulse test Pulse test
Tc = -55°C
ïYfsï

Drain-source ON resistance

25

100 VGS = -10 V

RDS (ON) (W)
Forward transfer admittance

-15
1 1

0.1 0.1
-0.1 -1 -10 -0.1 -1 -10

Drain current ID (A) Drain current ID (A)

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 2SJ567

RDS (ON) – Tc IDR – VDS

6 -10
Common source Common source
VGS = -10 V ID = -1.5 A Tc = 25°C
5

(A)
Pulse test Pulse test
Drain-source ON resistance

Drain reverse current IDR

-1.2
4
RDS (ON) (W)

3 -1
-1.0

1
-5 -3
-1 VGS = 0 V
0 -0.1
-80 -40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1

Case temperature Tc (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Tc

1000 5

Ciss Common source

Gate threshold voltage Vth (V)

VDS = 10 V
4
ID = 1 mA
Pulse test
(pF)

100
3
Capacitance C

Coss

10 Crss
1
Common source
VGS = 0 V
f = 1 MHz 0
Tc = 25°C -80 -40 0 40 80 120 160
1
-0.1 -1 -10 -100 Case temperature Tc (°C)

Drain-source voltage VDS (V)

PD – Tc Dynamic input/output characteristics

40
VDS
-160 -16
(W)

(V)
(V)

VDS = -40 V
30
PD

VDS

VGS

-120 -12
Drain power dissipation

Common source
Drain-source voltage

-180
Gate-source voltage

ID = -2.5 A
20 Tc = 25°C
-80 -8
Pulse test

-80
10
-40 VGS -4

0 0
0 40 80 120 160 0 4 8 12 16 20

Case temperature Tc (°C) Total gate charge Qg (nC)

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 2SJ567

rth – tw
3

Normalized transient thermal impedance

1
Duty = 0.5
0.5
0.3 0.2
rth (t)/Rth (ch-c)

0.1
0.1
0.05
0.05
0.02
0.03 Single pulse
PDM

t
0.01
0.01
0.005 T
0.003 Duty = t/T
Rth (ch-c) = 6.25°C/W
0.001
10 m 100 m 1m 10 m 100 m 1 10 100

Pulse width tw (S)

Safe operating area EAS – Tch

-30 100

ID max (pulse) * 100 ms*

-10
(mJ)

80
-5
1 ms*
-3
Avalanche energy EAS
(A)

60
-1
ID

-0.5
Drain current

40
-0.3 DC
operation

-0.1 20

-0.05 * Single nonrepetitive pulse

-0.03 Tc = 25°C
0
Curves must be derated 25 50 75 100 125 150
VDSS max
-0.01 linearly with increase in
temperature. Channel temperature Tch (°C)
-0.005
-0.1 -0.3 -1 -3 -10 -30 -100 -300

Drain-source voltage VDS (V)

BVDSS
15 V
-15 V IAR

VDD VDS

Test circuit Waveform

RG = 25 W 1 æ B VDSS ö
Ε AS = × L × I2 × ç ÷
VDD = -50 V, L = 25.2 mH 2 çB - V ÷
è VDSS DD ø

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 2SJ567

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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