Pabna University of Science &

Technology

BJT & FET

FREQ. RESPONSE
Study of frequency effects on BJT and FET

T. H. M. Sumon Rashid
Assistant Professor, Dept. of EEE
 BJT & FET
Frequency Response

Frequency Response Capacitor Effects

01 Defination, typical response 02 Coupling, Bypass, output capacitors,
parasitic capacitance etc.

Low Frequency High Frequency

Response Response
03 Analysis of input, output and bypass
capacitor on low frequencies.
04 Analysis of input, output and
bypass capacitor on High
frequencies.

2
Frequency Response Lecture 17

The frequency response of an amplifier refers to the frequency range in

which the amplifier will operate with negligible effects from capacitors
and device internal capacitance. This range of frequencies can be called
the mid-range.

✓ At frequencies above and below the midrange, capacitance and

any inductance will affect the gain of the amplifier.
✓ At low frequencies the coupling and bypass capacitors lower the
gain. At high frequencies stray capacitances associated with the
active device lower the gain.
✓ Also, cascading amplifiers limits the gain at high and low
frequencies.

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
3
 Typical Frequency Response Lecture 17

For 𝑅𝐶 coupled amplifier:

✓ Gain drops at low frequencies due to
increasing reactance (𝐶𝐶 , CS , or CE ).
✓ Whereas gain drops at high frequencies due
to either the parasitic capacitive elements
of the network or the frequency
dependence of the gain of the active
device.
For Transformer-coupled amplifier:
✓ At low frequencies gain drops due to “shorting
effect” (across input terminals) of the
magnetizing inductive reactance 𝑋𝐿 = 2𝜋𝑓𝐿 .
✓ At high frequency response is controlled by
the stray capacitance between turns of the
primary and secondary windings.
For direct-coupled amplifier:
✓ No gain drop at low frequencies.
✓ At high frequencies, same as RC coupled amplifier.
Fig.17-1: Typical frequency response
[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
4
 Typical Frequency Response Lecture 17

✓ For each system of Fig.17-1 , there is a band of frequencies in which the magnitude of the
gain is either equal or relatively close to the midband value.
✓ To fix the frequency boundaries of relatively high gain, 0.707𝐴𝑣 𝑚𝑖𝑑 was chosen to be the gain
at the cutoff levels.
✓ 𝑓𝐿 and 𝑓𝐻 are generally called the corner, cutoff, break or half-power frequencies.
✓ The multiplier 0.707 was chosen because at this level the output power is half the midband
power output.
2
𝑉𝑜2 𝐴𝑣𝑚𝑖𝑑 𝑉𝑖
𝑃𝑜 𝑚𝑖𝑑 = =
𝑅𝑜 𝑅𝑜

2 2
0.707 𝐴𝑣𝑚𝑖𝑑 𝑉𝑖 𝐴𝑣𝑚𝑖𝑑 𝑉𝑖
At half power frequencies, 𝑃𝑜 𝐻𝑃𝐹 = = 0.5 = 0.5 𝑃𝑜 𝑚𝑖𝑑
𝑅𝑜 𝑅𝑜

Bandwidth of each system is = 𝑓𝐻 − 𝑓𝐿

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
5
 Coupling & Bypass Capacitors Lecture 17

Effect of Coupling Capacitors:

1
✓ We know, 𝑋𝐶 =
2𝜋𝑓𝐶
✓ At lower frequencies the reactance is greater and it decreases
as the frequency increases. So, gain drops at lower frequencies.
✓ Also a phase shift is introduced by the coupling capacitors
because 𝐶1 forms a lead circuit with 𝑅𝑖𝑛
✓ 𝐶3 forms a lead circuit with 𝑅𝐿 in series with 𝑅𝐶 .

Effect of Bypass Capacitors:

✓ At lower frequencies, 𝑋𝐶 2 is significant and
emitter is no longer at ac ground, Fig. 17-3. Fig.17-2: Capacitively Coupled BJT
✓ 𝑋𝐶2 in parallel with 𝑅𝐸 creates an impedance amplifier.

that reduces the gain. For CE amplifier,

𝑋𝐶 ≫ 0 Ω, Voltage gain 𝐴𝑉 = 𝑅𝐶 /(𝑟𝑒 + 𝑍𝑒 )
✓ At high frequencies, 𝑋𝐶 2 ≅ 0 Ω and the
𝑅𝐶
voltage gain 𝐴𝑉 = .
𝑟𝑒
Fig.17-3:

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
6
 Internal Transistor Capacitances Lecture 17

✓ At high frequencies, the coupling and bypass

capacitors become effective ac shorts.
✓ Internal transistor junction capacitances, do come into
play, reducing an amplifier’s gain and introducing
phase shift as the signal frequency increases.
✓ These internal capacitances are referred to as parasitic
capacitances.
✓ At lower frequencies, the internal capacitances have a
very high reactance because of their low capacitance (a) BJT (b) FET
value (picofarads).
Fig.17-4: Internal parasitic transistor
✓ As the frequency goes up, the internal capacitive
capacitances.
reactances go down and at some point they begin to
have a significant effect on the transistor’s gain.

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
7
 Internal Transistor Capacitances Lecture 17

Fig.17-5: Effect of 𝐶𝑏𝑒 , where 𝑉𝑏 is reduced by the Fig.17-6: Effect of 𝐶𝑏𝑐 , where part of 𝑉𝑜𝑢𝑡 (𝑉𝑓𝑏 ) goes
voltage-divider action of Rs and 𝑋𝐶 𝑏𝑒 . back through 𝐶𝑏𝑐 to the base

✓ When the reactance of 𝐶𝑏𝑐 (or 𝐶𝑔𝑑 ) becomes

✓ When the reactance of 𝐶𝑏𝑒 (or 𝐶𝑔𝑠 ) becomes
small enough, a significant amount of output
small enough, a significant amount of the signal
signal voltage is fed back out of phase with the
voltage is lost due to a voltage-divider effect
input (negative feedback), thus effectively
of the signal source resistance and the
reducing the voltage gain.
reactance of 𝐶𝑏𝑒 .

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
8
 Miller’s Theorem Lecture 17

✓ Miller’s theorem is used to simplify the analysis of

inverting amplifiers at high frequencies.
✓ A generalized form of BJT or FET system shown in fig.17-
7(a), C represents either 𝑪𝒃𝒄 or 𝑪𝒈𝒅 and 𝐴𝑣 is midrange
gain. (a)

Miller’s theorem states that C effectively appears as

a capacitance from input to ground, as shown in
Figure 10–5(b), that can be expressed as follows:

𝐶𝑖𝑛(𝑀𝑖𝑙𝑙𝑒𝑟) = 𝐶(𝐴𝑣 + 1)

✓ This formula shows that 𝐶𝑏𝑐 (or 𝐶𝑔𝑑 ) has a much

greater impact on input capacitance than its actual
value.
✓ For example, if 𝐶𝑏𝑐 = 6 pF and the amplifier gain is (b)
50, then 𝐶𝑖𝑛(𝑀𝑖𝑙𝑙𝑒𝑟) = 306 𝑝𝐹. Fig.17-7: General case of Miller input and
output capacitances

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
9
 Miller’s Theorem Lecture 17

(a)
(b)
Fig.17-8: ac equivalent showing internal capacitances and effective Miller capacitances.

Miller’s theorem also states that C effectively appears as a capacitance from output to ground,
as shown in Figure 17–8, that can be expressed as follows:
𝐴𝑣 + 1
𝐶𝑖𝑛(𝑀𝑖𝑙𝑙𝑒𝑟) = 𝐶
𝐴𝑣
This formula indicates that if the voltage gain is 10 or greater, 𝐶𝑜𝑢𝑡 𝑀𝑖𝑙𝑙𝑒𝑟
is approximately
equal to 𝐶𝑏𝑐 or 𝐶𝑔𝑑 .

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
10
 The Decibel Lecture 18

✓ The decibel is a unit of logarithmic gain

measurement and is commonly used to
express amplifier response.
✓ The decibel unit is important in amplifier
measurements.
✓ Power gain is expressed in decibels (dB) as

𝐴𝑝 (𝑑𝐵) = 10 log 𝐴𝑝
✓ Voltage gain is expressed in decibels as
𝐴𝑣 (𝑑𝐵) = 20 log 𝐴𝑣 Fig.18-1:Normalized voltage
gain versus frequency curve.
0 dB Reference
It is also called reference gain, is used as a reference with which to
compare other values of gain and is therefore assigned a 0 dB value.
When an amplifier’s response is shifted in the vertical axis to 0 dB, it
is said to be normalized. Fig.18-2: Decibels Vs Voltage gain.

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
11
 Power Measurement in dBm Lecture 18

✓ The dBm is a unit for measuring power levels referenced to 1

mW.
✓ Positive dBm values represent power levels above 1 mW.
✓ negative dBm values represent power levels below 1 mW.
✓ The decibel (dB) can be used to represent only power
ratios, not actual power.
✓ dBm provides a convenient way to express actual power
output.
✓ Each 3 dBm increase corresponds to a doubling of the power.
✓ 3 dBm decrease corresponds to a halving of the power.

Fig.18-3: Decibels Vs Voltage gain.

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
12
 Low Frequency Amplifier Response Lecture 18

✓ The voltage gain and phase shift of capacitively

coupled amplifiers are affected when the signal
frequency is below a critical value.
✓ At low frequencies, the reactance of the coupling
capacitors becomes significant, resulting in a reduction
in voltage gain and an increase in phase shift.

✓ At the midrange frequency, voltage gain,

𝑅𝑐
𝐴𝑣 𝑚𝑖𝑑 = Where, 𝑅𝑐 = 𝑅𝐶 ∥ 𝑅𝐿
𝑟𝑒

Fig.18-4: A capacitively coupled

BJT amplifier

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
13
 Low Frequency Amplifier Response Lecture 18

✓ The BJT amplifier in Figure 18–5 has three

high-pass RC circuits that affect its gain as
the frequency is reduced below midrange.
✓ One RC circuit is formed by the input
coupling capacitor 𝐶1 and the input resistance
of the amplifier.
✓ The second RC circuit is formed by the output coupling
capacitor C3, the resistance looking in at the collector
(𝑅𝑜𝑢𝑡 ), and the load resistance.
✓ The third RC circuit is formed by the emitter-bypass
Fig.18-5: BJT ac equivalent with three RC
capacitor 𝐶2 and the resistance looking in at the emitter. high pass circuits.

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
14
 The Input RC Circuit Lecture 18

✓ As the signal frequency decreases, 𝑿𝑪𝟏 increases.

✓ This causes less voltage across the input resistance
of the amplifier at the base.
✓ The base voltage for the input RC circuit can be
stated as
𝑅𝑖𝑛
𝑉𝑏𝑎𝑠𝑒 = 𝑉𝑖𝑛
2
Fig.18-6: Input RC circuit
𝑅𝑖𝑛 + 𝑋𝐶21
Lower Critical Frequency
At critical conditions, 𝑋𝐶1 = 𝑅𝑖𝑛 The condition where the gain is down 3 dB is logically
✓
called the -3 dB point of the amplifier response.
𝑅𝑖𝑛
𝑉𝑏𝑎𝑠𝑒 = 𝑉𝑖𝑛 = 0.707 𝑉𝑖𝑛 ✓ The frequency, 𝒇𝒄𝒍 , at which this condition occurs is
2
𝑅𝑖𝑛 + 2
𝑅𝑖𝑛 called the lower critical frequency.
1 1
𝑋𝐶1 = = 𝑅𝑖𝑛 ⇒ 𝑓𝑐𝑙 =
𝑉𝑏𝑎𝑠𝑒 2𝜋𝑓𝑐𝑙 𝐶1 2𝜋𝑅𝑖𝑛 𝐶1
In decibels, 20 log = 20 log(0.707)
𝑉𝑖𝑛 1
Considering source resistance, 𝑓𝑐𝑙 =
2𝜋(𝑅𝑆 + 𝑅𝑖𝑛 )𝐶1
= −3𝑑𝐵

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
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 Voltage Gain Roll-off below 𝒇𝒄𝒍 Lecture 18

✓ At critical frequency 𝑓𝑐 , voltage gain is

reduced by −3𝑑𝐵.
✓ As the frequency continues to decrease below
fc, the overall voltage gain also continues to
decrease. The rate of decrease in voltage gain
with frequency is called roll-off.
✓ For each ten times reduction in frequency
below fc, there is a 20 dB reduction in voltage
gain.

At 𝑓𝑐 , 𝑋𝐶1 = 𝑅𝑖𝑛
At 0.1𝑓𝑐 , 𝑋𝐶1 = 10𝑅𝑖𝑛 Fig.18-7: Input RC circuit

𝑉𝑏𝑎𝑠𝑒 𝑅𝑖𝑛 ✓ A ten-times change in frequency is called a decade.

Attenuation, = ≅ 0.1
𝑉𝑖𝑛 2 2
✓ A plot of dB voltage gain versus frequency on semi-
𝑅𝑖𝑛 + 10𝑅𝑖𝑛 log graph paper is called a Bode plot.
✓ Sometimes expressed as dB/octave.
dB attenuation, = 20 log(0.1) = −20𝑑𝐵 ✓ An octave corresponds to a doubling or halving of
the frequency.
[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
16
 Phase Shift in the Input RC Circuit Lecture 18

✓ At lower frequencies, higher values of 𝑋𝐶1 cause a

phase shift.
✓ The output voltage of the input RC circuit leads the
input voltage.
✓ The phase angle in an input RC circuit is expressed
as
𝑋𝐶1
𝜃 = tan−1 (− )
𝑅𝑖𝑛
At midrange frequencies, 𝑋𝐶1 = 0 𝑉, so Fig.18-8: Input RC circuit

𝑋𝐶1
𝜃 = tan−1 (− ) = 0o
𝑅𝑖𝑛
At 𝑓 = 𝑓𝐶 , 𝑋𝐶1 = 𝑅𝑖𝑛 , 𝜃 = 45𝑜

At 𝑓 = 0.1𝑓𝐶 , 𝑋𝐶1 = 10𝑅𝑖𝑛 , 𝜃 = 84.3𝑜

The input RC circuit approaches 90𝑜 as the

frequency approaches zero.
Fig.18-9: base voltage leads the input
voltage below midrange.
[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
17
 The Output RC Circuit Lecture 19

(a) (b) (c)

Fig.19-1: Development of equivalent low frequency output RC circuit.

✓ The effect of the output RC is similar to input RC ✓ The signal voltage is reduced by a factor of
circuit. 0.707, when frequency is reduced to the
✓ As the signal frequency decreases, 𝑋𝐶3 increases. lower critical value, 𝑓𝑐𝑙 .
✓ This causes less voltage across the load resistance ✓ This corresponds to a 3 dB reduction in
because more voltage is dropped across 𝐶3 . voltage gain.
[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
18
 The Bypass RC Circuit Lecture 19

(a) (b) (c)

Fig.19-2: Development of the equivalent bypass RC circuit

✓ The bypass RC circuit is formed by 𝐶2 and the
resistance looking in at the emitter,
𝑅𝑖𝑛(𝑒𝑚𝑖𝑡𝑡𝑒𝑟) , as shown in Figure 19–2(a).
✓ To find 𝑅𝑖𝑛(𝐸𝑚𝑖𝑡𝑡𝑒𝑟) Thevenin’s theorem is
applied Fig. 19-2 (b).
✓ This results in an equivalent resistance (𝑅𝑡ℎ ) and
an equivalent voltage source (𝑉𝑡ℎ (1)) in series
with the base.

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
19
 The Bypass RC Circuit Lecture 19

(a) (b) (c)

Fig.19-3: Development of the equivalent bypass RC circuit
𝑉𝑒 𝑉𝑏
𝑅𝑖𝑛(𝑒𝑚𝑖𝑡𝑡𝑒𝑟) = 𝑟𝑒 + ≅ 𝑟𝑒 + The lower critical frequency for this equivalent bypass
𝐼𝑒 𝛽𝑎𝑐 𝐼𝑏
RC circuit is 1
𝐼𝑏 𝑅𝑡ℎ 𝑅𝑡ℎ 𝑓𝑐𝑙(𝑏𝑦𝑝𝑎𝑠𝑠) =
𝑅
≅ 𝑟𝑒 + ≅ 𝑟𝑒 + 2𝜋 𝑟𝑒 + 𝑖𝑛 ∥ 𝑅𝐸 𝐶2
𝛽𝑎𝑐 𝐼𝑏 𝛽𝑎𝑐 𝛽𝑎𝑐

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
20
 FET Amplifiers Lecture 19

✓ A zero-biased D-MOSFET amplifier Fig. 19-4.

✓ It has only two high-pass RC circuits.
✓ One RC circuit is formed by 𝐶1 and the input resistance.
✓ The other circuit is formed by 𝐶2 and the output
resistance looking in at the drain.

The Input RC Circuit

✓ Similar to BJT, 𝑋𝐶1 increases as the frequency decreases.
Fig.19-4:Zero-biased D-MOSFET amplifier.
✓ When 𝑋𝐶1 = 𝑅𝑖𝑛 , the gain is down 3 dB below its midrange
value.
1
The lower critical frequency is, 𝑓𝑐𝑙(𝑖𝑛𝑝𝑢𝑡) =
2𝜋𝑅𝑖𝑛 𝐶1
Where, 𝑅𝑖𝑛 = 𝑅𝐺 ∥ 𝑅𝑖𝑛(𝑔𝑎𝑡𝑒)

𝑅𝑖𝑛(𝑔𝑎𝑡𝑒) is determined from datasheet information as

𝑉𝐺𝑆
𝑅𝑖𝑛(𝑔𝑎𝑡𝑒) = Fig.19-5: Input RC circuit
𝐼𝐺𝑆𝑆

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
21
 FET Output RC Circuit Lecture 19

(a) (b) (c)

Fig.19-6: Development of the equivalent low-frequency output RC circuit.

1
The lower critical frequency for this RC circuit is, 𝑓𝑐𝑙(𝑜𝑢𝑡𝑝𝑢𝑡) =
2𝜋 𝑅𝐷 + 𝑅𝐿 𝐶2

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
22
 Total Low-Frequency Response Lecture 19

✓ To get a better picture, superimposed

ideal responses for the three RC
circuits (green lines) of a BJT amplifier.
✓ Each RC circuit has a different critical
frequency.
✓ The input RC circuit is dominant
(highest 𝑓𝑐 ) in this case, and the bypass
RC circuit has the lowest 𝑓𝑐 .

Fig.19-7: Low frequency Bode plot – different

critical frequency

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
23
 Total Low-Frequency Response Lecture 19

✓ The ideal overall response is

shown as the blue line.
✓ If all RC circuits have the same
critical frequency, the response
curve has one break point at that
value of 𝑓𝑐𝑙 , and the voltage gain
rolls off at −60 𝑑𝐵/𝑑𝑒𝑐𝑎𝑑𝑒 below
that value.

Fig.19-8: Same critical frequency

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
24
 High-Frequency Response Lecture 20

Fig.20-2: High-frequency equivalent circuit.

Fig.20-1: Capacitively coupled amplifier.

Applying Miller Theorem:

𝐶𝑖𝑛(𝑀𝑖𝑙𝑙𝑒𝑟) = 𝐶𝑏𝑐 (𝐴𝑣 + 1)

𝐴𝑣 + 1
𝐶𝑂𝑢𝑡(𝑀𝑖𝑙𝑙𝑒𝑟) = 𝐶𝑏𝑐
𝐴𝑣
Fig.20-3: High-frequency equivalent circuit after applying Miller’s
theorem.
[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
25
 The Input RC Circuit Lecture 20

(b)
(a)
At critical frequency,
𝑋𝐶𝑡𝑜𝑡 = 𝑅𝑆 ∥ 𝑅1 ∥ 𝑅2 ∥ 𝛽𝑎𝑐 𝑟𝑒
Therefore,
1
= 𝑅𝑆 ∥ 𝑅1 ∥ 𝑅2 ∥ 𝛽𝑎𝑐 𝑟𝑒
2𝜋𝑓𝑐𝑢 𝑖𝑛𝑝𝑢𝑡 𝐶𝑡𝑜𝑡
1
𝑓𝑐𝑢(𝑖𝑛𝑝𝑢𝑡) =
2𝜋 𝑅𝑆 ∥ 𝑅1 ∥ 𝑅2 ∥ 𝛽𝑎𝑐 𝑟𝑒 𝐶𝑡𝑜𝑡 (c)
Fig.20-4: Development of the equivalent high-frequency
input RC circuit.
[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
26
 The Output RC Circuit Lecture 20

𝐴𝑣 + 1
𝐶𝑂𝑢𝑡(𝑀𝑖𝑙𝑙𝑒𝑟) = 𝐶𝑏𝑐
𝐴𝑣
If 𝐴𝑣 ≥ 10,
𝐶𝑂𝑢𝑡(𝑀𝑖𝑙𝑙𝑒𝑟) = 𝐶𝑏𝑐
1
𝑓𝑐𝑢(𝑜𝑢𝑡𝑝𝑢𝑡) = (b)
2𝜋𝑅𝑐 𝐶𝑜𝑢𝑡(𝑀𝑖𝑙𝑙𝑒𝑟)
(a)

(d)
(c)
Fig.20-5: Development of the equivalent high-frequency Output RC circuit.
[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
27
 Total High Frequency Response Lecture 20

(a) (b)
Fig. 20-6: High-frequency Bode plots.

✓ An ideal high-frequency Bode plot is ✓ At 𝑓𝑐𝑢(𝑜𝑢𝑡𝑝𝑢𝑡) , the gain begins dropping at

shown in Figure 20–6(a). − 40 𝑑𝐵/𝑑𝑒𝑐𝑎𝑑𝑒.
✓ The first break point at 𝑓𝑐𝑢(𝑖𝑛𝑝𝑢𝑡) ✓ Figure 20–6(b) shows a nonideal Bode plot where
✓ Where the voltage gain begins to roll off the voltage gain is actually −3 𝑑𝐵/𝑑𝑒𝑐𝑎𝑑𝑒 below
at −20 𝑑𝐵/𝑑𝑒𝑐𝑎𝑑𝑒. midrange at 𝑓𝑐𝑢(𝑖𝑛𝑝𝑢𝑡) .
[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
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 Total Frequency Response Lecture 20

✓ Fig. 20–7(b) shows a generalized ideal response

curve (Bode plot) for the BJT amplifier.
✓ The three break points at the lower critical
frequencies (𝑓𝑐𝑙1 , 𝑓𝑐𝑙2 , 𝑎𝑛𝑑 𝑓𝑐𝑙3 ) are produced by the
three low-frequency RC circuits formed by the
coupling and bypass capacitors.
✓ The break points at the upper critical frequencies,
𝑓𝑐𝑢1 and 𝑓𝑐𝑢2 , are produced by the two high-
frequency RC circuits formed by the transistor’s
internal capacitances.

Fig. 20-7: High-frequency Bode plots.

[Prepared and Conducted by: T. H. M. Sumon Rashid, Assistant Professor, Dept. of EEE, Pabna University of Science and Technology]
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 THANKS
Do you have any questions?

CREDITS:
T. H. M. Sumon Rashid
Assistant Professor, Dept. of EEE
Pabna University of Science & Technology