SUM45N25-58

New Product Vishay Siliconix

N-Channel 250-V (D-S) 175_C MOSFET

FEATURES
D TrenchFETr Power MOSFETS
PRODUCT SUMMARY D 175_C Junction Temperature
D New Low Thermal Resistance Package
V(BR)DSS (V) rDS(on) (W) ID (A)
APPLICATIONS
0.058 @ VGS = 10 V 45
250
0.062 @ VGS = 6 V 43
D Primary Side Switch
D Plasma Display Panel Sustainer Function

TO-263

G D S
Top View
S
Ordering Information: SUM45N25-58-
N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 250
Gate-Source Voltage VGS "30 V
TC = 25_C 45
Continuous Drain Current (TJ = 175_C) ID
TC = 125_C 25
A
Pulsed Drain Current IDM 70
Avalanche Current IAR 35
Repetitive Avalanche Energya L = 0.1 mH EAR 61 mJ
TC = 25_C 375b
Maximum Power Dissipationa PD W
TA = 25_Cc 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)c RthJA 40
_C/W
Junction-to-Case (Drain) RthJC 0.4

Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).

Document Number: 72314 www.vishay.com

S-31515—Rev. A, 14-Jul-03 1
SUM45N25-58
Vishay Siliconix New Product

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 250
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4

Gate-Body Leakage IGSS VDS = 0 V, VGS = "30 V "250 nA

VDS = 200 V, VGS = 0 V 1

Zero Gate Voltage

g Drain Current IDSS VDS = 200 V, VGS = 0 V, TJ = 125_C 50 mA
m
VDS = 200 V, VGS = 0 V, TJ = 175_C 250

On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 70 A

VGS = 10 V, ID = 20 A 0.047 0.058

VGS = 10 V, ID = 20 A, TJ = 125_C 0.121
Drain-Source On State Resistancea
Drain Source On-State rDS(on)
DS( ) W
VGS = 10 V, ID = 20 A, TJ = 175_C 0.163
VGS = 6 V, ID = 15 A, 0.049 0.062
Forward Transconductancea gfs VDS = 15 V, ID = 20 A 70 S

Dynamicb
Input Capacitance Ciss 5000
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 300 pF
Reverse Transfer Capacitance Crss 170
Total Gate Chargec Qg 95 140
Gate-Source Chargec Qgs VDS = 125 V,, VGS = 10 V,, ID = 45 A 28 nC
Gate-Drain Chargec Qgd 34
Gate Resistance Rg f = 1 MHz 1.6 W
Turn-On Delay Timec td(on) 22 35
Rise Timec tr 220 330
VDD = 100 V, RL = 2.78 W
ns
Turn-Off Delay Timec td(off) ID ^ 45 A, VGEN = 10 V, RG = 2.5 W 40 60
Fall Timec tf 145 220

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current IS 45
A
Pulsed Current ISM 70

Forward Voltagea VSD IF = 45 A, VGS = 0 V 1.0 1.5 V

Reverse Recovery Time trr 150 225 ns
Peak Reverse Recovery Current IRM(REC) m
IF = 45 A,, di/dt = 100 A/ms 12 18 A
Reverse Recovery Charge Qrr 0.9 2 mC

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

www.vishay.com Document Number: 72314

2 S-31515—Rev. A, 14-Jul-03
 SUM45N25-58
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics
100 100
VGS = 10 thru 7 V
6V

80 80
I D - Drain Current (A)

I D - Drain Current (A)

60 60

40 40

TC = 125_C
20 5V 20
25_C
4V - 55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

150 0.10
TC = - 55_C

120 0.08
r DS(on) - On-Resistance ( W )

25_C
g fs - Transconductance (S)

90 0.06
125_C VGS = 6 V
VGS = 10 V
60 0.04

30 0.02

0 0.00
0 10 20 30 40 50 60 0 20 40 60 80 100

ID - Drain Current (A) ID - Drain Current (A)

Capacitance Gate Charge

7000 20

6000 VDS = 125 V

V GS - Gate-to-Source Voltage (V)

16 ID = 45 A
Ciss
5000
C - Capacitance (pF)

12
4000

3000
8

2000
4
1000 Crss
Coss

0 0
0 40 80 120 160 200 0 30 60 90 120 150 180

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Document Number: 72314 www.vishay.com

S-31515—Rev. A, 14-Jul-03 3
SUM45N25-58
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

2.8 100
VGS = 10 V
ID = 20 A
2.4
r DS(on) - On-Resistance (W)

I S - Source Current (A)

2.0
(Normalized)

TJ = 150_C TJ = 25_C
1.6 10

1.2

0.8

0.4 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2

TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)

Drain Source Breakdown vs.

Avalanche Current vs. Time Junction Temperature
100 300

290
ID = 1.0 mA
280
V(BR)DSS (V)

10
I Dav (a)

IAV (A) @ TA = 25_C 270

260
1
250

240
IAV (A) @ TA = 150_C

0.1 230
- 50 - 25 0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
tin (Sec) TJ - Junction Temperature (_C)

www.vishay.com Document Number: 72314

4 S-31515—Rev. A, 14-Jul-03
 SUM45N25-58
New Product Vishay Siliconix

THERMAL RATINGS

Maximum Avalanche and Drain Current

vs. Case Temperature Safe Operating Area, Case Temperature
50 100
10 ms

40 Limited
by rDS(on) 100 ms
I D - Drain Current (A)

I D - Drain Current (A)

10
30

1 ms
20 10 ms
1 100 ms
dc
10 TC = 25_C
Single Pulse

0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100 1000
TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1 Duty Cycle = 0.5

Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1 0.05
0.02
Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1
Square Wave Pulse Duration (sec)

Document Number: 72314 www.vishay.com

S-31515—Rev. A, 14-Jul-03 5
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