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NRF Charges List
NRF Charges List
(Users Charges)
S. Facility Details of Measurement Sample Type Charges Per Sample
No. (Rs.)
1. Tomography Optical Optical type Thin sample, Film 200 600 1800
Microscope/3D Optical
Profilometer
2. Electrochemical Quartz Electrochemical Sample (working 200 600 1200
Crystal Microbalance electrode)
3. Fuel Cell Test Station Electrochemical Membrane electrode 300 840 1800
(low temperature) assembly
13. Tabletop SEM Surface morphology Film/Bulk pellet 200 600 2400
(without coating)
14. Stylus Profilometer Thickness measurement Film with a step formed 200 600 1800
in the coating
15. Thin Film Stress Optical type Wafer/Film on wafer 300 840 1800
Measurement System
16. Optical Surface Optical type Film with a step formed 200 840 1800
Profilometer in the coating
18. FTIR ATR and FTIR Powder, Polymer, KBR 300 840 2400
Range: 400 - 4000 wave pellet
numbers
*To be paid extra GST 18% for external academic and industry users.
**Measurement Time: Minimum four hours (Temperature variation: 80 K to 300 K).
19. Photoluminescence (PL) Excitation: 325nm Film 300 840 3000
Scan range: 300nm - 800nm
24. Surface Photovoltage Work function of the film Film 200 400 800
(SPV)
*To be paid extra GST 18% for external academic and industry users.
Clean Room Surcharges: Rs. 100/- per person per entry (IIT Delhi)
Rs. 200/- per person per entry (External Academics)
Rs. 500/- per person per entry (Industry)
S. Facility Details of Sample Type Charges per hour Minimum Total
No. Measurement (Rs.) Time Charges
(Slot Duration) Per Slot
IITD External Academic Industry (hrs) Booking
(Extra GST 18%)* (Extra GST 18%)* IITD
(Rs.)
1. Maskless Fabrication of Thin substrate, 300 600 1800 3 900
Lithography System patterns on coated Wafer, Soft mask
photoresist drawing
2. E-beam Lithography Fabrication of Thin substrate 400 2000 5000 5 2000
System patterns on coated
electron resist
3. Plasma Asher Etching of Photoresist coated 300 600 1200 1 300
photoresist, Surface substrate, Wafer
activation
4. Reactive Ion Etching Dry Etching Thin substrate, 500 1000 4000 2 1000
System Wafer
5. Thermal Evaporation Deposition material: Thin substrate, 300 900 1800 3 900
Cr, Al, Ag, Au Wafer
9. Wire Bonder Wire bonding Substrate with 500 1200 2400 1 500
interconnections contact metal
10. Mask Aligner Fabrication of Wafer, Hard mask 300 840 2400 2 600
patterns on coated
photoresist
11. Wet Bench Sample cleaning, Thin substrate, 200 840 1800 1 200
Wet chemical Wafer
etching, Chemical
surface passivation
12. Atomic Layer Deposition material: Inorganic thin 500 625 1000 4 2000
Deposition System Al2O3 substrate, Wafer
13. Oxidation Furnace SiO2 film growth Si wafer 500 600 1000 4 2000
14. DC Sputtering Deposition material: Thin substrate, 300 800 2400 3 900
Cu, Ti Wafer
15. RTA Substrate annealing This substrate, 300 500 1000 1 300
Wafer
17. CVD-1 Deposition material: Thin substrate, 200 400 800 4 800
MoS2 Wafer
19. Thermal Evaporator Deposition material: 8-inch Wafer 300 900 1800 3 900
and Spin Coater Cr/Au spin coat
NPR/PPR only
For Au: Rs 2400/- per 50 nm
20. Automatic Screen Carbon/Graphite PMMA/ Si 500 1500 3000 2 1000
Printer paste
User to bring own 3D design as per PRUSA MK3i format. Max. print size
100 mm length, 150 mm wide, 100 mm height
User to bring own Coreldraw design for vector and raster design. Max. size
2 ft × 1.25 ft.
* To be paid extra GST 18% for external academic and industry users.