MMD65R900Q Datasheet

MMD65R900Q
650V 0.90Ω N-channel MOSFET

 Description
MMD65R900Q is power MOSFET using Magnachip’s advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of low EMI to
designers as well as low switching loss.

 Key Parameters  Package & Internal Circuit

Parameter Value Unit D D

VDS @ Tj, max 700 V
RDS(on), max 0.90 Ω
VGS(th), typ 3 V G
ID 4.7 A
G
Qg, typ 11.1 nC S
S

 Features
 Low power loss by high speed switching and low on-resistance

 100% avalanche tested

 Green package – Pb-free plating, Halogen-free

 Applications
 PFC power supply stages

 Switching applications

 Adapter

 Ordering Information
Order Code Marking Temp. Range Package Packing RoHS Status
MMD65R900QRH 65R900Q -55 ~ 150oC TO-252 Reel compliant

May. 2021. Revision 1.2 1 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet

 Absolute Maximum Rating (Tc=25oC unless otherwise specified)

Parameter Symbol Rating Unit Note

Drain – source voltage VDSS 650 V

Gate – source voltage VGSS ±30 V

4.7 A TC = 25oC
Continuous drain current ID
3.0 A TC = 100oC

Pulsed drain current(1) IDM 14.1 A

Power dissipation PD 34.7 W

Single - pulse avalanche energy EAS 50 mJ

MOSFET dv/dt ruggedness dv/dt 50 V/ns

Diode dv/dt ruggedness(2) dv/dt 15 V/ns

o
Storage temperature Tstg -55 ~150 C
Maximum operating junction o
Tj 150 C
temperature
1) Pulse width tP limited by Tj,max .
2) ISD ≤ ID, VDS peak ≤ V(BR)DSS .

 Thermal Characteristics

Parameter Symbol Value Unit

o
Thermal resistance, junction-case max Rthjc 3.4 C/W

o
Thermal resistance, junction-ambient max(3) Rthja 62 C/W
3) Device mounted on minimal footprint of PCB.

May. 2021. Revision 1.2 2 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet

 Static Characteristics (Tc=25oC unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Drain – source
V(BR)DSS 650 - - V VGS = 0V, ID = 250uA
breakdown voltage
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250uA

Zero gate voltage drain current IDSS - - 1 uA VDS = 650V, VGS = 0V

Gate leakage current IGSS - - 100 nA VGS = ±30V, VDS = 0V

Drain-source on state resistance RDS(ON) - 0.8 0.9 Ω VGS = 10V, ID = 1.5A

 Dynamic Characteristics (Tc=25oC unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Input capacitance Ciss - 384 -

VDS = 25V, VGS = 0V,
Output capacitance Coss - 439 -
f = 1.0MHz
pF
Reverse transfer capacitance Crss - 19.5 -
Effective output capacitance VDS = 0V to 520V,
Co(er) - 14.5 -
energy related(4) VGS = 0V, f = 1.0MHz
Turn on delay time td(on) - 13.5 -

Rise time tr - 24 -
VGS = 10V, RG = 25Ω,
ns
VDS = 325V, ID = 4.7A
Turn off delay time td(off) - 56 -

Fall time tf - 23.5 -

Total gate charge Qg - 11.1 -

VGS = 10V, VDS = 520V,
Gate – source charge Qgs - 4.5 - nC
ID = 4.7A
Gate – drain charge Qgd - 2.6 -

Gate resistance RG - 20 - Ω VGS = 0V, f = 1.0MHz

4) Co(er) is a capacitance that gives the same stored energy as Coss while VDS is rising from 0V to 80% V(BR)DSS

May. 2021. Revision 1.2 3 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet

 Reverse Diode Characteristics (Tc=25oC unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Continuous diode forward current IS - - 4.7 A

Diode forward voltage VSD - - 1.4 V IS = 4.7A, VGS = 0V

Reverse recovery time trr - 263 - ns

IS = 4.7A
Reverse recovery charge Qrr - 1.9 - uC di/dt = 100A/us
VDD = 100V
Reverse recovery current Irrm - 14.4 - A

May. 2021. Revision 1.2 4 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet
 Characteristic Graph

May. 2021. Revision 1.2 5 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet

May. 2021. Revision 1.2 6 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet

May. 2021. Revision 1.2 7 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet

 Test Circuit

May. 2021. Revision 1.2 8 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet

 Physical Dimension

TO-252(2L)

[Unit:mm]

Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.

May. 2021. Revision 1.2 9 Magnachip Semiconductor Ltd.

 MMD65R900Q Datasheet

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip
Semiconductor Ltd.

May. 2021. Revision 1.2 10 Magnachip Semiconductor Ltd.