GATE EC BY RK Kanodia

CHAPTER

2.2
THE PN JUNCTION

In this chapter, N d and N a denotes the net donor 5. The Fermi level on p - side is
and acceptor concentration in the individual n and (A) 0.2 eV (B) 0.1 eV
p-region. (C) 0.4 eV (D) 0.3 eV

1. An abrupt silicon in thermal equilibrium at T = 300 Statement for Q.6–8:

K is doped such that Ec - EF = 0.21 eV in the n - region A silicon pn junction at T = 300 K with zero
and EF - Ev = 0.18 eV in the p - region. The built-in applied bias has doping concentrations of N d = 5 ´ 1016
potential barrier Vbi is cm -3 and N a = 5 ´ 1015 cm -3.
(A) 0.69 V (B) 0.83 V
(C) 0.61 V (D) 0.88 V 6. The width of depletion region extending into the
n-region is
2. A silicon pn junction at T = 300 K has N d = 1014 (A) 4 ´ 10 -6 cm (B) 3 ´ 10 -6 cm
-3 -3
cm and N a = 10 cm . The built-in voltage is
17
(C) 4 ´ 10 -5 cm (D)3 ´ 10 -5 cm
(A) 0.63 V (B) 0.93 V
(C) 0.026 V (D) 0.038 V 7. The space charge width is
. ´ 10 -5 cm
(A) 32 (B) 4.5 ´ 10 -5 cm
3. In a uniformly doped GaAs junction at T = 300 K, at (C) 4.5 ´ 10 -4 cm . ´ 10 -4 cm
(D) 32
zero bias, only 20% of the total space charge region is to
be in the p-region. The built in potential barrier is 8. In depletion region maximum electric field | Emax | is
(A) 1 ´ 10 4 V cm (B) 2 ´ 10 4 V cm
Vbi = 1.20 V. The majority carrier concentration in
(C) 3 ´ 10 4 V cm (D) 4 ´ 10 4 V cm
n-region is
(A) 1 ´ 1016 cm -3 (B) 4 ´ 10 16 cm -3 9. An n – n isotype doping profile is shown in fig. P2.2.9.
-3 -3
(C) 1 ´ 10 22
cm (D) 4 ´ 10 22
cm The built-in potential barrier is . ´ 1010 cm -3 )
(ni = 15
Nd(cm-3)
Statement for Q.4–5: 16
10
An abrupt silicon pn junction at zero bias and 15
10
T = 300 K has dopant concentration of N a = 1017 cm -3
and N d = 5 ´ 1015 cm -3.
0
4. The Fermi level on n - side is Fig. P2.2.9

(A) 0.1 eV (B) 0.2 eV (A) 0.66 V (B) 0.06 V

(C) 0.3 eV (D) 0.4 eV (C) 0.03 V (D) 0.33 V

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 UNIT 2 GATE EC BY RK Kanodia Electronics Devices

Statement for Q.10–11: concentration are N d = 4 ´ 1016 cm -3 and N a = 4 ´ 1017

A silicon abrupt junction has dopant concentration cm -3. The magnitude of the reverse bias voltage is

N a = 2 ´ 1016 cm -3 and N d = 2 ´ 10 15 cm -3. The applied (A) 3.6 V (B) 9.8 V

reverse bias voltage is VR = 8 V. (C) 7.2 V (D) 12.3 V

10. The maximum electric field | Emax | in depletion region is 17. An abrupt silicon pn junction has an applied
(A) 15 ´ 10 V cm
4
(B) 7 ´ 10 V cm
4 reverse bias voltage of VR = 10 V. it has dopant

. ´ 10 4 V cm
(C) 35 (D) 5 ´ 10 4 V cm concentration of N a = 1018 cm -3 and N d = 1015 cm -3. The
pn junction area is 6 ´ 10 -4 cm 2 . An inductance of 2.2
11. The space charge region is mH is placed in parallel with the pn junction. The
(A) 2.5 mm (B) 25 mm resonant frequency is
(C) 50 mm (D) 100 mm (A) 1.7 MHz (B) 2.6 MHz
(C) 3.6 MHz (D) 4.3 MHz
12. A uniformly doped silicon pn junction has
N a = 5 ´ 1017 cm -3 and N d = 10 17 cm -3. The junction has 18. A uniformly doped silicon p+ n junction is to be
a cross-sectional area of 10 -4 cm -3 and has an applied designed such that at a reverse bais voltage of V R = 10
reverse-bias voltage of VR = 5 V. The total junction V the maximum electric field is limited to Emax = 106
capacitance is V cm. The maximum doping concentration in the
(A) 10 pF (B) 5 pF n-region is
(C) 7 pF (D) 3.5 pF . ´ 1019 cm -3
(A) 32 . ´ 1017 cm -3
(B) 32
(C) 6.4 ´ 1017 cm -3 (D) 6.4 ´ 1019 cm -3
Statement for Q.13–14:

An ideal one-sided silicon n+ p junction has 19. A diode has reverse saturation current I s = 10 -10 A
uniform doping on both sides of the abrupt junction. and non ideality factor h = 2. If diode voltage is 0.9 V,
The doping relation is N d = 50 N a . The built-in potential then diode current is
barrier is Vbi = 0.75 V. The applied reverse bias voltage (A) 11 mA (B) 35 mA
is V R = 10. (C) 83 mA (D) 143 mA

13. The space charge width is 20. A diode has reverse saturation current I s = 10 -18 A
(A) 1.8 mm (B) 1.8 mm and nonideality factor h = 105
. . If diode has current of 70
(C) 1.8 cm (D) 1.8 m mA, then diode voltage is
(A) 0.63 V (B) 0.87 V
14. The junction capacitance is (C) 0.54 V (D) 0.93 V
(A) 3.8 ´ 10 -9 F cm 2 (B) 9.8 ´ 10 -9 F cm 2
(C) 2.4 ´ 10 -9 F cm 2 (D) 5.7 ´ 10 -9 F cm 2 21. An ideal pn junction diode is operating in the
forward bais region. The change in diode voltage, that
+
15. Two p n silicon junction is reverse biased at VR = 5 will cause a factor of 9 increase in current, is
V. The impurity doping concentration in junction A are (A) 83 mV (B) 59 mV
-3 -15 -3
N a = 10 cm
18
and N d = 10 cm , and those in junction (C) 43 mV (D) 31 mV
B are N a = 1018 cm -3 and N d = 1016 cm -3. The ratio of the
space charge width is 22. An pn junction diode is operating in reverse bias
(A) 4.36 (B) 9.8 region. The applied reverse voltage, at which the ideal
(C) 19 (D) 3.13 reverse current reaches 90% of its reverse saturation
current, is
16. The maximum electric field in reverse-biased silicon (A) 59.6 mV (B) 2.7 mV
pn junction is | Emax | = 3 ´ 10 5
V cm. The doping (C) 4.8 mV (D) 42.3 mV
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23. For a silicon p+ n junction diode the doping cross-sectional area is 10 -3 cm 2 . The minority carrier
-3 -3
concentrations are N a = 10 18
cm and N d = 10 16
cm . lifetimes are t n 0 = 1 ms and t p 0 = 0.1 m s. The minority
The minority carrier hole diffusion coefficient is Dp = 12 carrier diffusion coefficients are Dn = 35 cm 2 s and
cm 2 s and the minority carrier hole life time is t p 0 = 10 -7 Dp = 10 cm 2 s. The total number of excess electron in
s. The cross sectional area is A = 10 -4 cm 2 . The reverse the p - region, if applied forward bias is Va = 0.5 V, is
saturation current is (A) 4 ´ 10 7 cm -3 (B) 6 ´ 1010 cm -3
-12 -15
(A) 4 ´ 10 A (B) 4 ´ 10 A (C) 4 ´ 1010 cm -3 (D) 6 ´ 10 7 cm -3
(C) 4 ´ 10 -11 A (D) 4 ´ 10 -7 A
28. Two ideal pn junction have exactly the same
24. For an ideal silicon pn junction diode electrical and physical parameters except for the band
t no = t po = 10 -7 s , gap of the semiconductor materials. The first has a
bandgap energy of 0.525 eV and a forward-bias current
Dn = 25 cm 2 s ,
of 10 mA with Va = 0.255 V. The second pn junction
Dp = 10 cm 2 s diode is to be designed such that the diode current
The ratio of N a N d , so that 95% of the current in I = 10 mA at a forward-bias voltage of Va = 0.32 V. The
the depletion region is carried by electrons, is bandgap energy of second diode would be
(A) 0.34 (B) 0.034 (A) 0.77 eV (B) 0.67 eV
(C) 0.83 (D) 0.083 (C) 0.57 eV (D) 0.47 eV

Statement for Q.25–26: 29. A pn junction biased at Va = 0.72 V has DC bias

A ideal long silicon pn junction diode is shown in current I DQ = 2 mA. The minority carrier lifetime is 1 ms
fig. P2.2.25–26. The n - region is doped with 10 16 is both the n and p regions. The diffusion capacitance is
organic atoms per cm 3 and the p - region is doped with in
5 ´ 10 16
boron atoms per 3
cm . The minority carrier (A) 49.3 nF (B) 38.7 nF
lifetimes are D n = 23 cm s and Dp = 8 cm s. The
2 2
(C) 77.4 nF (D) 98.6 nF
forward-bias voltage is Va = 0.61 V.
30. A p+ n silicon diode is forward biased at a current of
W 1 mA. The hole life time in the n - region is 0.1 ms.
Neglecting the depletion capacitance the diode
p n
Va impedance at 1 MHz is
(A) 38.7 + j12.1 W . + j7.5 W
(B) 235
x=0 x
(C) 38.7 - j12.1 mW . - j7.5 W
(D) 235
Fig. P.2.2.25-26

31. The slope of the diffusion capacitance verses

25. The excess hole concentration is
forward-bias current of a p+ n diode is 2.5 ´ 10 -6 F A.
(A) 6.8 ´ 1012 e -246 x cm -3, x ³ 0
The hole lifetime is
(B) 6.8 ´ 1012 e -246 x cm -3, x ³ 0 (A) 1.3 ´ 10 -7 s (B) 1.3 ´ 10 -4 s
(C) 3.8 ´ 1014 e -3534 x cm -3, x ³ 0 (C) 6.5 ´ 10 -8 s (D) 6.5 ´ 10 -4 s
+3534 x -3
(D) 3.8 ´ 10 e 14
cm , x ³ 0
32. A silicon pn junction with doping profile of N a = 1016
26. The hole diffusion current density at x = 3 mm is cm -3 and N d = 10 15 cm -3 has a cross sectional area of
(A) 0.6 A cm 2 (B) 0.6 ´ 10 -3 A cm 2 10 -2 cm 2 . The length of the p - region is 2 mm and
(C) 0.4 A cm 2 (D) 0.4 ´ 10 -3 A cm 2 length of the n - region is 1 mm. The approximately
series resistance of the diode is
27. The doping concentrations of a silicon pn junction (A) 62 W (B) 43 W
-3 -3
are N d = 10 16
cm and N a = 8 ´ 10 15
cm . The (C) 72 W (D) 81 W
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 UNIT 2 GATE EC BY RK Kanodia Electronics Devices

33. A gallium arsenide pn junction is operating in 39. A GaAs laser has a threshold density of 500 A cm 2 .
reverse-bias voltage VR = 5 V. The doping profile are The laser has dimensions of 10 mm ´ 200 mm. The active
-3
N a = N d = 10 16
cm . The minority carrier life- time are region is dLas = 100 A °. The electron-hole recombination
-8
t p 0 = t n 0 = t 0 = 10 s. The reverse-biased generation time at threshold is 1.5 ns. The current density of 5J th
current density is (e r = 131
. , ni = 1.8 ´ 10 ) 6
is injected into the laser. The optical power emitted, if
-8 -9
. ´ 10
(A) 19 A cm 2
. ´ 10
(B) 19 A cm 2
emitted photons have an energy of 1.43 eV, is
(C) 1.4 ´ 10 -8
A cm 2
(D) 1.4 ´ 10 -9
A cm 2 (A) 143 mW (B) 71.5 mW
(C) 62.3 mW (D) 124.6 mW
34. For silicon the critical electric field at breakdown is
approximately Ecrit = 4 ´ 10 5 V cm. For the breakdown
voltage of 25 V, the maximum n - type doping ***************
+
concentration in an abrupt p n-junction is
(A) 2 ´ 1016 cm -3 (B) 4 ´ 10 16 cm -3
(C) 2 ´ 1018 cm -3 (D) 4 ´ 10 18 cm -3

35. A uniformly doped silicon pn junction has dopant

profile of N a = N d = 5 ´ 1016 cm -3. If the peak electric
field in the junction at breakdown is E = 4 ´ 10 5 V cm,
the breakdown voltage of this junction is
(A) 35 V (B) 30 V
(C) 25 V (D) 20 V

36. An abrupt silicon p+ n junction has an n - region

doping concentration of N d = 5 ´ 10 15 cm -3. The
minimum n - region width, such that avalanche
breakdown occurs before the depletion region reaches
an ohmic contact, is (VB » 100 V)
(A) 5.1 mm (B) 3.6 mm
(C) 7.3 mm (D) 6.4 mm

37. A silicon pn junction diode has doping profile

N a = N d = 5 ´ 1019 cm -3. The space charge width at a
forward bias voltage of Va = 0.4 V is
(A) 102 A° (B) 44 A°
(C) 153 A° (D) 62 A°

38. A GaAs pn+ junction LED has following

parameters

Dn = 25 cm 2 s, Dp = 12 cm 2 s

N d = 5 ´ 1017 cm -3, N a = 1016 cm -3

t n 0 = 10 ns , t p 0 = 10 ns

The injection efficiency of the LED is

(A) 0.83 (B) 0.99
(C) 0.64 (D) 0.46
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 UNIT 2 GATE EC BY RK Kanodia Electronics Devices

. ´ 10 -5 cm,
= 301 æ 4 ´ 1016 ´ 4 ´ 10 17 ö
= 0.0259 ln çç ÷÷ = 0.826 V
eA 117
. ´ 8.85 ´ 10 ´ 10 -14 -4
è 2. 25 ´ 10 20 ø
CT = = . ´ 10 -12 F
= 35
W . ´ 10 -5
301 1
é2 e( Vbi + VR ) Na Nd ù 2
| Emax | = ê
æN N ö ë e ( N a + N d ) úû
13. (A) Vbi = Vt ln çç a 2 d ÷÷
è ni ø eEmax
2
æ 1 1 ö
Vbi + VR = çç + ÷÷
2e è Na Nd ø
æ 50 N a2 ö
0.751 = 0.0259 ln çç ÷÷
è 2.25 ´ 10
20
ø . ´ 8.85 ´ 10 -14 )( 3 ´ 10 5) 2 æ
(117 1 1 ö
= ç + 17 ÷
V
2 ´ 1.6 ´ 10 -19 è 4 ´ 1016
4 ´ 10 ø
N a = 4. 2 ´ 1015 cm -3, N d = 2.1 ´ 1017 cm -3
1
= 8.008 V
ì 2 e ( V + VR ) é 1 1 ùü 2 VR = 8.008 - 0.826 = 7.18 V
W = í s bi ê + úý ,
î e ë Na Na û þ
æN N ö
17. (B) Vbi = Vt ln çç a 2 d ÷÷
1
é2 e( Vbi + VR ) æ 1 öù 2
Nd > > Na Þ W » ê çç ÷÷ú è ni ø
ë e è N a øû
æ 1018 ´ 1015 ö
= 0.0259 ln çç ÷÷ = 0.754 V
è 2.25 ´ 10
20
1
ø
. ´ 8.85 ´ 10 -4 )(10.752) ù
é2 ´ (117 -4
2
=ê ú = 1.8 ´ 10 cm
ë 1.6 ´ 10 -19 ´ 4.2 ´ 1015 û
1
é eeN a N d ù2
C¢ = ê ú
= 1.8 mm ë2 ( Vi + VR )( N a + N d ) û
1
1
é eeN d ù2
é ee N a N d ù 2 For N a >> N d , C¢ = ê ú
14. (D) C¢ = ê ú ë2 ( Vbi + VR ) û
ë2( Vbi + VR )( N a + N d ) û
1
1
é1.6 ´ 10 -19 ´ 117. ´ 8.85 ´ 10 -4 ´ 1015 ù 2
é ee N a ù 2 =ê ú
For N d >> N a , C¢ = ê ú ë 2 (10 + 0.754) û
ë2( Vbi + VR ) û
1 = 2.77 ´ 10 -9 F cm 2
-19 -4
é1.6 ´ 10 ´ 117
. ´ 8.85 ´ 10 ´ 4.2 ´ 10 ù 15 2
C = AC¢ = 6 ´ 10 -4 ´ 2.77 ´ 10 -9 = 1.66 ´ 10 -12 F
=ê ú
ë 2 (10 + 0.754) û 1 1
fo = = = 2.6 MHz.
= 5.7 ´ 10 -9 F cm 2 2p LC 2 p 2. 2 ´ 10 -3 ´ 1.66 ´ 10 -12

1
ì 2 e ( V + VR ) é 1 1 ùü 2 eN a xn
15. (D) W = í s bi + 18. (B) | Emax | =
e êN úý e
î ë a Na û þ
é2e( Vbi + VR ) ù
1
For a p+ n junction, xn » ê ú
W A é( Vbia + V R ) ( N aA + N dA ) N aB N dB ù 2 ë eN d û
=
WB êë ( Vbib + R ) ( N aB + N dB ) N aA N dB úû 1
é2 eN d ù2
æN N ö So that | Emax | = ê ( Vbi + VR ) ú
Vbi = Vt ln çç a 2 d ÷÷ ë es û
è ni ø
Assuming Vbi << VR ,
æ 1018 ´ 1015 ö
VbiA = 0.0259 ln çç ÷÷ = 0.754 V eEmax
2
. ´ 8.85 ´ 10 -14 )(10 6 ) 2
(117
è 2.25 ´ 10
20
ø Nd = =
2 eVR 2(1.6 ´ 10 -14 )(10)
æ 1018 ´ 1016 ö
VbiB = 0.0259 ln çç ÷÷ = 0.814 V = 3. 24 ´ 1017 cm -3
è 2.25 ´ 10
20
ø
1
æ VD ö 0 .9

W A éæ 5.754 öæ 1018 + 1015 öæ 1016 öù 2 19. (B) I D = I s ç e hVt - 1 ÷ = 10 -10 ( e 2 ´( 0 .0259) - 1 ) = 35 mA

= êç ÷ç ÷÷çç 15 ÷÷ú = 313
. ç ÷
WB ëè 5.814 øçè 10 18 + 1016 øè 10 øû è ø

æN N ö æ VD ö æ I ö
16. (C) Vbi = Vt ln çç a 2 d ÷÷ 20. (B) I D = I s ç e hVt - 1 ÷ Þ VD = hVt ln çç 1 + D ÷÷
ç ÷ è Is ø
è ni ø è ø
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The pn Junction GATE EC BY RK Kanodia Chap 2.2

æ 70 ´ 10 -6 ö é çæç eVa ÷ö÷ ù

. )(0.0259) ln çç 1 +
= (105 ÷÷ = 0.87 V 27. (A) N p = ALn np 0 êe è kT ø -1ú
è 10 -18 ø êë úû
V1 . ´ 1010 ) 2
ni2 (15
æ Vö
ç- ÷
-
Vt ( V1 - V2 ) np 0 = = = 2.8 ´ 10 4 cm -3
ç V ÷ I d1 e -
Na 8 ´ 1015
21. (B) I d » I s e è tø
, = V2 = e Vt

I d2 -
e Vt Ln = Dn t no = 35 ´ 10 -6 = 5.9 ´ 10 -3 Cm
æI ö
V1 - V2 = Vt ln çç d 2 ÷÷ = 0.0259 ln 10 = 59.6 mV é çæç 0 .5 ÷ö÷ ù
è I d1 ø N p = 10 -3 ´ 5.9 ´ 10 -3 ´ 2.8 ´ 10 4 êe è 0 .0259 ø - 1ú
êë úû
æ VV ö æ I ö = 4 ´ 10 7 cm -3
22. (A) I = I s ç e t - 1 ÷ Þ V = Vt ln çç + 1 ÷÷
ç ÷ I
è s ø
è ø æ -Eg ö æ Va ö
æ Va ö ç ÷ ç ÷
ç ÷ ç V ÷ çV ÷
I 28. (A) I µ ni2 e çè Vt ÷ø µ e è t ø
e è tø
= -0.90 (–ive due to reverse current)
Is æ V -Eg ö
ç a ÷
ç V ÷
V = 0.0259 ln (1 - 0.9) = -59.6 mV Þ I µ eè t ø

æ V a - E g1 ö
ç ÷
ç V ÷ 1
23. (B) I s = Aen
1 2 D I1 e è t ø ( Va1 - Va2 - E g1 + E g2 )
i = æ V - E ö = e Vt
Nd t po I2 ç
ç
a2 g2 ÷
÷
Vt
eè ø

(10 -4 )(1.6 ´ 10 -19)(15

. ´ 10 10 ) 2 12
= . ´ 10 -15 A
= 394 10 ´ 10 -3
( 0 .255- 0 .32 - 0 .525+ E g2 )
1016 10 -7 =e ( 0 .0259)

10 ´ 10 -6
æ E g2 - 0 .59 ö
Jn ç ÷
24. (D) = 0.95, ç 0 .0259 ÷
Jn + Jp 10 = e
3 è ø

Dp E g 2 = 0.59 + 0.0259 ln 10 3 = 0.769 EV

1 Dn 1
J n = en 2
i , J p = en 2
i
Na t no Nd t po
æ I p 0 t p 0 + I n 0 tn 0 ö
29. (B) Cd = çç ÷÷
Dn 5 è 2 Vt ø
= 0.95, = 0.95
N Na
Dn + a Dp 5+ 10 t n 0 = t p 0 = 10 -6 s, I p 0 + I n 0 = I dQ = 2 mA
Nd Nd
-3 -6
2 ´ 10 ´ 10
Na Cd = = 3.86 ´ 10 -8 F
Þ = 0.083 2( 0.0259)
Nd

I dQ 10 -3
é æçç eVa ö÷÷ ù é çç - Lx
æ ö
÷ ù 30. (D) g d = = = 3.86 ´ 10 -2 S
÷ Vt 0.0259
25. (C) dpn = pn - pn 0 = pn 0 êe è kt ø - 1ú êe è p ø ú
êë úû ê ú I dQt p 0 10 -3 ´ 10 -7
ë û Cd = = . ´ 10 -9 F
= 193
2 Vt 2 ´ (0.0259)
. ´ 1010 ) 2
ni2 (15
pn 0 = = = 2. 25 ´ 10 4 cm -3
Nd 1016 1 1
Z= = = 235
. - j7.5 W
Y g d + jwCd
Lp = Dp t p 0 = ( 8)(1 ´ 10 -8 ) = 2.83 ´ 10 -4 cm

ùé ç- x ÷ ù
æ ö
é æç 0 .61 ö÷ 31. (A) For a p+ n diode I p 0 >> I n 0
dpn = 2.25 ´ 10 4 êe çè 0 .0259 ÷ø - 1ú êe çè 2 .83´10 -4 ÷ø ú
ë ûë û æ 1 ö tp 0
-3534 x -3
Cd = çç ÷÷( I pot po), = 2.5 ´ 10 -6
= 3.8 ´ 10 e 14
cm è 2 Vt ø 2 Vt

Þ t p 0 = 2 ´ 0.0259 ´ 2.5 ´ 10 -6 = 1.3 ´ 10 -7 s

¶ ( dpn )
26. (A) J p = - eDp = eDp ( 3.8 ´ 1014 )( 3534) e -3534 x
¶x
rp L L
x = 3 mm = 3 ´ 10 -4 cm 32. (C) RP = =
-4
A A( em p N a )
J p = (1.6 ´ 10 -19)(18)( 3.8 ´ 1014 )( 3534) e - ( 3534 )( 3´10 )

0.2
= = 26 W
= 0.6 A cm 2 (10 -2 )(1.6 ´ 10 -19)( 480)(10 16 )

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 UNIT 2 GATE EC BY RK Kanodia Electronics Devices

rn L L æ 5 ´ 1019 ö
Rn = = = 2(0.0259) ln çç ÷÷ = 114
. V
A Ae(m n N d ) . ´ 1010
è 15 ø
0.10 1
= = 46.3 W ì 2 e ( V + VR ) é 1 1 ùü 2
(10 )(1.6 ´ 10 -19)(1350)(1015)
-3
W = í s bi êN + úý
î e ë a Na û þ
R = Rp + Rn = 72.3 W
1
. ´ 8.85 ´ 10 -14 )(114
é2 ´ (117 . - 0.4) æ 2 öù 2
æN N ö =ê -14 ç 19 ÷ú
33. (B) Vbi = Vt ln çç a 2 d ÷÷ ë 1.6 ´ 10 è 5 ´ 10 øû
è ni ø = 6.19 ´ 10 -7 cm = 62 A°
æ 10 16
ö
= 2(0.0259) ln çç ÷÷ =1.16 V
è 1.8 ´ 10
6
ø 38. (B) Ln = Dn t n 0 , Lp = Dp t p 0
1
Dn np 0 Dn
ì 2 e ( V + VR ) é 1 1 ùü 2 np 0
W = í s bi ê N + N úý Ln tn 0
î e ë a a ûþ hinj = =
Dn np 0 Dp pn 0 Dn Dp
1 + np 0 + pn 0
. ´ 8.85 ´ 10 -14 )( 6.16) æ 2 öù
é2 ´ (131 2
-4
Ln Lp tn 0 tp 0
=ê -19 ç 16 ÷ú = 1.34 ´ 10 cm
ë 1 .6 ´ 10 è 10 øû ni2 (1.8 ´ 106 ) 2
np 0 = = . ´ 10 -4 cm -3
= 324
eniW Na 1016
J gen =
2t o ni2 (1.8 ´ 106 ) 2
pn 0 = = = 6.48 ´ 106 cm -3
1.6 ´ 10 -19 ´ 1.8 ´ 106 ´ 1.34 ´ 10 -4 Nd 5 ´ 1017
= . ´ 10 -9 A cm 2
= 193
2 ´ 10 -8 Dn 25
= = 5 ´ 10 4 ,
tn 0 10 ´ 10 -9
eEcrit
2
34. (A) VB = Dp 12
2 eN B = = 35
. ´ 10 4
tp 0 10 ´ 10 -9
. ´ 8.85 ´ 10 -4 )( 4 ´ 10 5) 2
(117
25 = (5 ´ 10 4 )( 3. 24 ´ 10 -4 )
2 ´ 1.6 ´ 10 -19 ´ N B hinj =
(5 ´ 10 )( 3. 24 ´ 10 -4 ) + ( 35
4
. ´ 10 4 )( 6.48 ´ 10 -6 )
N B = N d = 2 ´ 1016 cm -3
= 0.986
eN d xn eEmax
35. (D) Emax = Þ xn = 39. (B) The areal density at threshold is
e eN d
J th t r (500)(15. ´ 10 -9)
. ´ 8.85 ´ 10 -14 )( 4 ´ 10 5)
(117 n2 D = = = 4.69 ´ 1012 cm -3
= = 5.18 ´ 10 -5 cm e 1.6 ´ 10 -19
(1.6 ´ 10 -19)(5 ´ 1016 )
The carrier density is
æN N ö æ 5 ´ 106 ö
Vbi = Vt ln çç a 2 d ÷÷ = 2(0.0259) ln çç ÷÷ = 0.778 V n2 D 4.69 ´ 1012
. ´ 1010 nth = = = 4.69 ´ 1018 cm -3
è ni ø è 15 ø dLas 10 -6
1
ì 2 e V æ N öæ Once the threshold is reached, the carrier density does
1 öü 2
xn = í s bi çç a ÷÷çç ÷ý
÷ not change. When J > J th the electron hole
î e è N d øè N a + N d øþ
recombination is
-5 2 . ´ 8.85 ´ 10 -4 )( Vbi + VR ) ù
é2(117 . ´ 10 -9
(5.18 ´ 10 ) = ê -19 ú
J th
tr ( J ) = t r ( J th ) =
15
= 3 ´ 10 -10 s
ë (1.6 ´ 10 )(2 ´ 5 ´ 10 )
6
û J 5
Þ Vbi + VR = 20.7, VR = 19.9 V, VR = VB The optical power produced is p =
JA
hw
e
36. (A) For a p+ n diode, Neglecting Vi compared to VB , (5 ´ 500)(2 ´ 10 -5)(1.43 ´ 1.6 ´ 10 -19)
= = 715
. MW
1 1 1.6 ´ 10 -19
. ´ 8.85 ´ 10 -14 )(100) ù 2
é2 eVB ù 2 é2(117
xn » ê ú ê= -19 ú = 5.1 mm
ë eN d û ë (1.6 ´ 10 )(5 ´ 10 ) û
15

****************
æN N ö
37. (D) Vbi = Vt ln çç a 2 d ÷÷
è ni ø
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