PD 91677B

IRG4BC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
C
Features VCES = 600V
• UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in VCE(on) typ. = 2.15V
resonant mode
• Generation 4 IGBT design provides tighter G
parameter distribution and higher efficiency than @VGE = 15V, IC = 5.0A
previous Generation E
• IGBT co-packaged with HEXFREDTM ultrafast, n-cha nn el tf (typ.) = 140ns
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing TO-220AB

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 8.5
IC @ TC = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current Q 34 A
ILM Clamped Inductive Load Current R 34
IF @ TC = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 38
W
PD @ TC = 100°C Maximum Power Dissipation 15
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT — — 3.3
RθJC Junction-to-Case - Diode — — 7.0 °C/W
RθCS Case-to-Sink, flat, greased surface — 0.50 —
RθJA Junction-to-Ambient, typical socket mount — — 80
Wt Weight — 2 (0.07) — g (oz)
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IRG4BC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.15 2.6 IC = 5.0A VGE = 15V
— 2.61 — V IC = 8.5A See Fig. 2, 5
— 2.30 — IC = 5.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th) /∆TJ Temperature Coeff. of Threshold Voltage — -8.7 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 2.8 4.2 — S VCE = 100V, IC = 5.0A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
V FM Diode Forward Voltage Drop — 1.5 1.8 V IC = 4.0A See Fig. 13
— 1.4 1.7 IC = 4.0A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 15 22 IC = 5.0A
Qge Gate - Emitter Charge (turn-on) — 2.6 4.0 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 5.8 8.7 VGE = 15V
td(on) Turn-On Delay Time — 40 — TJ = 25°C
tr Rise Time — 16 — ns IC = 5.0A, VCC = 480V
td(off) Turn-Off Delay Time — 87 130 VGE = 15V, RG = 100Ω
tf Fall Time — 140 210 Energy losses include "tail" and
Eon Turn-On Switching Loss — 0.14 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 0.12 — mJ See Fig. 9, 10, 18
Ets Total Switching Loss — 0.26 0.33
td(on) Turn-On Delay Time — 38 — TJ = 150°C, See Fig. 11, 18
tr Rise Time — 18 — ns IC = 5.0A, VCC = 480V
td(off) Turn-Off Delay Time — 95 — VGE = 15V, RG = 100Ω
tf Fall Time — 250 — Energy losses include "tail" and
Ets Total Switching Loss — 0.45 — mJ diode reverse recovery.
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 270 — VGE = 0V
Coes Output Capacitance — 21 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 3.5 — ƒ = 1.0MHz
t rr Diode Reverse Recovery Time — 28 42 ns TJ = 25°C See Fig.
— 38 57 TJ = 125°C 14 IF = 4.0A
Irr Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7 TJ = 125°C 15 VR = 200V
Q rr Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig.
— 70 105 TJ = 125°C 16 di/dt = 200A/µs
di (rec)M/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig.
During tb — 235 — TJ = 125°C 17

Details of note Q through T are on the last page

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 IRG4BC10UD
7
F o r b o th :
D u ty c y c le : 5 0 %
6
TJ = 1 2 5 ° C
T sink = 9 0 ° C
G a te d riv e a s s p e c ifie d
LOAD CURRENT (A)

5 P o w e r D is s ip a tio n = 9.2 W

4 S q u a re w a v e :
6 0% of rate d
volta ge
3

Id e a l d io d e s
1

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)

I C , Collector-to-Emitter Current (A)


TJ = 25 oC

TJ = 150 oC
10

10

TJ = 150 o C


TJ = 25 o C

0.1

V GE = 15V
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
1 10 5 6 7 8 9 10 11 12 13 14
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC10UD
10

5.0
VGE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

8

I C = 10 A
4.0

3.0

I C = 5.05 A
4


I C = 2.5 A
2.0
2

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

10
Thermal Response (Z thJC )

D = 0.50

1
0.20

0.10


0.05

0.02 P DM
0.1 0.01
 SINGLE PULSE
(THERMAL RESPONSE) t1
t2

0.01

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4BC10UD


500


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 5.0A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

400 Coes = Cce + Cgc 16
C, Capacitance (pF)

300 
Cies 12

200 8

100
C
oes 4


Cres

0 0
1 10 100 0 4 8 12 16
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

 
0.30 10
V CC = 480V 100 Ω
RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V
I C = 5.0A
Total Switching Losses (mJ)
Total Switching Losses (mJ)


IC = 10 A
1

I
C = 5.0A
5A
0.25

IC = 2.5 A

0.1

0.20 0.01
50 60 70 80 90 100 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG R, GGate
, Gate Resistance(Ohm)
Resistance (Ω) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4BC10UD


1.4 100
RG = 100Ω
Ohm VGE = 20V
TJ = 150 ° C T J = 125 oC

I C , Collector-to-Emitter Current (A)

1.2 VCC = 480V
VGE = 15V
Total Switching Losses (mJ)

1.0

0.8
10
0.6

0.4

0.2

SAFE OPERATING AREA

0.0 1
0 2 4 6 8 10 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
Instantaneous Forward Current ( A )

10 TJ = 150°C

TJ = 125°C

T = 25°C
J

0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0

FForward
orward VVoltage
oltage DDrop
rop -- VVFM
F M((V
V) )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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 IRG4BC10UD
50 14
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
I F = 8.0A 12
45
I F = 4.0A
I F = 8.0A
10
40 I F = 4.0A
trr- (nC)

Irr- ( A)
8

35

30
4

25
VR = 2 00 V 2
T J = 1 2 5°C
T J = 2 5 °C
20 0
100 1000 100 1000
di f /dt - (A/µ s) di f /dt - (A/µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

200 1000
VR = 2 00 V VR = 20 0V
T J = 1 25°C T J = 1 25 °C
T J = 2 5°C T J = 2 5°C

160

I F = 8.0A I F = 8.0A
di (rec) M/dt- (A /µs)

I F = 4.0A
I F = 4.0A
120
Qrr- (nC)

80

40

A
0 100
100 1000 100 1000
di f /dt - (A/µ s) di f /dt - (A/µ s )
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
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IRG4BC10UD

90% Vge
Same ty pe
device as +Vge
D .U.T.

Vce

430µF
80%
of Vce D .U .T. 9 0 % Ic
10% Vce
Ic Ic
5 % Ic

td (o ff) tf

∫
t1 + 5 µ S
Eoff = Vce
V c e icIcd tdt
Fig. 18a - Test Circuit for Measurement of
t1
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G A T E V O L T A G E D .U .T . trr
Ic
Q rr = Ic ddt
id t
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
E o n = VVce
ce ieIc
d t dt

∫
t4
t1 E re c = VVd
d idIc
d t dt
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr
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 IRG4BC10UD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R EN T D .U .T .

V O L T A G E IN D .U .T .

C U R R EN T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X I C @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

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IRG4BC10UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Case Outline and Dimensions — TO-220AB

1 0 .5 4 (.4 1 5 ) 3.78 (.149) -B - N O TE S :

2.8 7 (.1 1 3 ) 1 0 .2 9 (.4 0 5 ) 4.69 (.185) 1 D IM E N S IO N S & T O L E R A N C IN G
3.54 (.139)
2.6 2 (.1 0 3 ) 4.20 (.165) P E R A N S I Y 1 4 .5 M , 1 9 8 2.
-A - 1.32 (.05 2)
1.22 (.04 8) 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
6 .4 7 (.255)
M IL L IM E T E R S (IN C H E S ).
4 6 .1 0 (.240)
4 C O N F O R M S T O J E D E C O U T L IN E
1 5 .2 4 (.6 0 0 ) T O -2 20 A B .
1 4 .8 4 (.5 8 4 )
1.15 (.0 45)
M IN LEAD A S S IG N M E N T S
1 2 3 1- G A TE
3.96 (.1 60) 2- C O L LE C T O R
3X 3- E M IT T E R
3.55 (.1 40)
4- C O L LE C T O R
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 ) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.0 22)

3X 3X
1 .4 0 (.0 5 5 ) 0.69 (.027) 0.46 (.0 18)
3 X 1 .1 5 (.0 4 5 )
0 .3 6 (.0 1 4 ) M B A M
2.92 (.115 )
2 .5 4 (.1 0 0 ) 2.64 (.104 )
2X

CONFORMS TO JEDEC OUTLINE TO-220AB

D im e n s io n s in M illim e te rs a n d (In c h e s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/